FDMC2523P [ONSEMI]
P 沟道，QFET® MOSFET，-150V，-3A，1.5Ω;
| 型号： | FDMC2523P |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道，QFET® MOSFET，-150V，-3A，1.5Ω 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：212K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – P-Channel,
QFET
Pin 1
G
S
S
S
D
-150 V, -3 A, 1.5 W
D
D
D
Top
Bottom
FDMC2523P
General Description
WDFN8 3.3x3.3, 0.65P
CASE 511DH
These P−Channel MOSFET enhancement mode power field effect
transistors are produced using onsemi’s proprietary, planar stripe,
DMOS technology. This advanced technology has been especially
tailored to minimize on−state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for low voltage
applications such as audio amplifier, high efficiency switching
DC−DC converters, and DC motor control.
MARKING DIAGRAM
ZXYKK
2523P
Features
• Max R
= 1.5 ꢀ at V = −10 V, I = −1.5 A
GS D
• Low C (Typical 10 pF)
DS(on)
rss
Z
= Assembly Plant Code
• Fast Switching
XY
KK
2523P
= Date Code (Year &Week)
= Lot Traceability Code
= Specific Device Code
• Low Gate Charge (Typical 6.2 nC)
• Improved dv / dt Capability
• This Device is Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Active Clamp Switch
S
D
S
D
D
S
D
G
ORDERING INFORMATION
†
Device
Package
Shipping
FDMC2523P
WDFN8
3000 /
(Pb−Free)
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
March, 2023 − Rev. 2
FDMC2523P/D
FDMC2523P
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Ratings
Unit
V
V
DS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
−150
30
−3
V
I
D
Continuous
Continuous
Pulsed
T
T
= 25°C
= 100°C
−
A
C
−1.8
−12
C
P
Power Dissipation (Steady State)
T
= 25°C
42
W
mJ
°C
D
C
E
AS
Single Pulse Avalanche Energy (Note 5)
3.3
T , T
Operating and Storage Junction Temperature Range
−55 to +150
300
J
STG
T
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
Peak Diode Recovery dv/dt (Note 2)
°C
L
dv/dt
−5
V/ns
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Thermal Resistance, Junction−to−Case (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 1a)
Ratings
3.0
Unit
°C/W
R
ꢁ
JC
R
60
ꢁ
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain−to−Source Breakdown Voltage
I
I
= −250 ꢂ A, V = 0 V
−150
−
−
−
V
DSS
D
GS
Breakdown Voltage
Temperature Coefficient
= −250 ꢂ A, referenced to 25°C
−
−138
mV/°C
ꢃ BVDSS
ꢃ TJ
D
I
Zero Gate Voltage Drain Current
V
V
V
= −150 V, V = 0 V
−
−
−
−
−
−
−1
ꢂ A
ꢂ A
nA
DSS
DS
GS
= −150 V, V = 0 V, T = 125 °C
−10
100
DS
GS
GS
J
I
Gate−to−Source Leakage Current
= 30 V, V = 0 V
DS
GSS
ON CHARACTERISTICS
V
Gate−to−Source Threshold Voltage
V
I
= V , I = −250 ꢂ A
−3
−3.8
−5
V
GS(th)
GS
DS
D
Gate−to−Source Threshold Voltage
Temperature Coefficient
= −250 ꢂ A, referenced to 25°C
−
6
−
mV/°C
ꢃ VGS(th)
ꢃ TJ
D
R
Static Drain−to−Source
V
GS
V
GS
V
DS
= −10 V, I = −1.5 A
−
−
−
1.1
2.0
1.4
1.5
3.6
−
ꢀ
S
DS(on)
D
On Resistance
= −10 V, I = −1.5 A, T = 125°C
D
J
g
FS
Forward Transconductance
= −40 V, I = −1.5 A (Note 4)
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= −25 V, V = 0 V, f = 1 MHz
−
−
200
60
270
80
pF
iss
DS
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
−
10
15
rss
R
f = 1 MHz
0.1
7.5
15
ꢀ
g
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2
FDMC2523P
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS
t
t
Turn−On Delay Time
Rise Time
V
= −75 V, I = −3 A, V = −10 V,
GEN
−
−
−
−
−
−
−
15
11
27
20
35
24
9
ns
d(on)
DD
D
GS
R
= 25 ꢀ (Note 3, 4)
t
r
Turn−Off Delay Time
Fall Time
19
d(off)
t
f
13
Q
Total Gate Charge
Gate−to−Source Charge
Gate−to−Drain “Miller” Charge
V
GS
= −10 V, V = −75 V, I = −3 A
6.2
1.4
3.3
nC
g
DD
D
(Note 3, 4)
Q
−
gs
gd
Q
−
DRAIN−SOURCE DIODE CHARACTERISTICS
I
Maximum Continuous Drain − Source Diode Forward Current
Maximum Pulse Drain − Source Doide Forward Current
−
−
−
−
−
−3
−12
−5
A
V
S
I
SM
V
SD
Source−to−Drain Diode Forward
V
GS
= 0 V, I = −3.0 A
−1.8
S
Voltage
t
Reverse Recovery Time
I = −3.0 A, di/dt = 100 A/ꢂ s (Note 3)
F
−
−
93
−
−
ns
rr
Q
Reverse Recovery Charge
0.27
ꢂ C
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
1. R
is the sum of the junction−to−case and case−to− ambient thermal resistance where the case thermal reference is defined as the solder
ꢁ
JA
mounting surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
ꢁ
ꢁ
CA
JC
a) 60°C/W when mounted on
b) 135°C/W when mounted on
2
a 1 in pad of 2 oz copper
a minimum pad of 2 oz copper
2. I ≤ −3 A, dI/dt ≤ 300 A/ꢂ s, V ≤ B
, Starting T = 25°C.
J
SD
DD
VDSS
3. Pulse Test: Pulse Width < 300 ꢂ s, Duty cycle < 2.0%.
4. Essentially independent of operating temperature.
5. E of 3.3 mJ is based on starting T = 25°C, P−ch: L = 3 mH, I = −1.5 A, V = −150 V, V = −10 V.
AS
J
AS
DD
GS
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3
FDMC2523P
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
3.0
2.5
1.6
V
GS
= −10 V
Pulse Duration = 300 ꢂ s
Duty Cycle = 2.0 % Max
Pulse Duration = 300 ꢂ s
Duty Cycle = 2.0 % Max
V
= −6 V
= −7 V
GS
V
= −8 V
1.4
GS
V
GS
= −7 V
2.0
1.5
1.0
V
GS
= −8 V
V
GS
= −9 V
1.2
1.0
0.8
V
GS
V
GS
= −9 V
V
GS
= −6 V
0.5
0.0
V
GS
= −10 V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
2
4
6
8
10
−V , Drain to Source Voltage (V)
DS
−I Drain Current (A)
D,
Figure 2. Normalized On−Resistance vs.
Figure 1. On−Region Characteristics
Drain Current and Gate Voltage
4.0
3.5
3.0
2.5
2.0
1.5
1.0
2.1
1.8
1.5
1.2
I
= −3 A
= −10 V
Pulse Duration = 300 ꢂ s
Duty Cycle = 2.0 % Max
D
V
GS
I
D
= −0.75 A
T = 125°C
J
0.9
0.6
T = 25°C
J
0.3
−50 −25
0
25
50
75
100 125 150
5
6
7
8
9
10
T , Junction Temperature (5C)
J
−V , Gate to Source Voltage (V)
GS
Figure 4. On−Resistance vs.
Figure 3. Normalized On−Resistance vs.
Gate to Source Voltage
Junction Temperature
10
1
3.0
2.5
V
= 0 V
Pulse Duration = 300 ꢂ s
Duty Cycle = 2.0 % Max
GS
T = 125°C
J
V
DD
= −5 V
2.0
1.5
0.1
T = 125°C
J
T = 25°C
J
0.01
1E−3
1E−4
1.0
0.5
T = 25°C
J
T = −55°C
J
T = −55°C
J
0.0
8
2
3
4
5
6
7
0.0
0.5
1.0
1.5
2.0
2.5
−V , Body Diode Forward Voltage (V)
SD
−V , Gate to Source Voltage (V)
GS
Figure 6. Source to Drain Diode
Forward Voltage vs. Source Current
Figure 5. Transfer Characteristics
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4
FDMC2523P
TYPICAL CHARACTERISTICS (continued)
(T = 25°C unless otherwise noted)
J
10
8
1000
V
DD
= −50 V
I
D
= −3 A
C
iss
V
DD
= −75 V
100
6
4
V
DD
= −100 V
C
oss
10
1
C
rss
2
0
f = 1 MHz
= 0 V
V
GS
0
2
8
4
6
0
25
50
75
100
125
150
Q ,Gate Charge (nC)
g
−V Drain to Source Voltage (V)
DS
Figure 8. Capacitance vs Drain to Source
Voltage
Figure 7. Gate Charge Characteristics
6
40
10
R
Limited
DS(ON)
100 ꢂs
1
0.1
T = 25°C
J
1 ms
10 ms
100 ms
T = 125°C
J
Single Pulse
T = Max Rated
1
1 s
10 s
DC
0.01
J
R
= 135°C/W
θ
JA
T = 25°C
A
0.5
10
1E−3
1
−2
−1
0
10
10
10
20
1
10
100
400
t
, Time in Avalanche (ms)
AV
V
DS
Drain to Source Voltage (V)
Figure 10. Forward Bias Safe
Operating Area
Figure 9. Unclamped Inductive
Switching Capability
500
100
T = 25°C
For Temperatures above 25°C
Derate Peak Current as follows:
A
150 * TA
Ǹ
ƪ ƫ
I * I25
125
10
Single Pulse
R
= 135°C/W
θ
JA
1
0.5
10
−4
−2
−1
0
1
2
3
−3
10
10
10
10
10
10
10
t, Pulse Width (s)
Figure 11. Single Pulse Maximum Power Dissipation
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5
FDMC2523P
TYPICAL CHARACTERISTICS (continued)
(T = 25°C unless otherwise noted)
J
2
1
Duty Cycle−Descending Order
D = 0.5
0.2
0.1
P
DM
0.1
0.05
0.02
0.01
t
1
t
2
Notes:
0.01
Z
ꢁ
(t) = r(t) x R
ꢁ
JA
JA
R
= 135°C/W
θ
Single Pulse
JA
Peak T = P
x Z (t) + T
ꢁ
JA A
J
DM
Duty Cycle: D = t /t
1
2
0.001
−4
−2
−1
2
−3
3
1
10
10
10
10
10
10
10
t, Rectangular Pulse Duration (s)
Figure 12. Transient Thermal Response Curve
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511DH
ISSUE O
DATE 31 JUL 2016
(3.40)
2.37
0.05 C
B
3.30
A
8
5
2X
0.45(4X)
(0.40)
2.15
3.30
(1.70)
KEEP OUT
AREA
(0.65)
0.70(4X)
0.05 C
PIN#1 IDENT
1
4
TOP VIEW
0.65
0.42(8X)
2X
1.95
RECOMMENDED LAND PATTERN
0.75 0.05
0.10 C
0.15 0.05
0.08 C
0.025 0.025
NOTES:
C
SIDE VIEW
SEATING
PLANE
A. DOES NOT CONFORM TO JEDEC
REGISTRATION MO−229
B. DIMENSIONS ARE IN MILLIMETERS.
3.30 0.05
2.27 0.05
C. DIMENSIONS AND TOLERANCES PER
ASME Y14.5M, 2009.
(0.50)4X
(0.35)
PIN #1 IDENT
0.50 0.05 (4X)
(0.79)
D. LAND PATTERN RECOMMENDATION IS
EXISTING INDUSTRY LAND PATTERN.
1
4
(1.15)
3.30 0.05
2.00 0.05
R0.15
0.30 0.05 (3X)
8
5
0.35 0.05 (8X)
0.65
0.10
0.05
C A B
C
1.95
BOTTOM VIEW
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Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13625G
WDFN8 3.3X3.3, 0.65P
PAGE 1 OF 1
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