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FDMC510P-T [ONSEMI]

-20V P沟道PowerTrench® MOSFET;
FDMC510P-T
型号： FDMC510P-T
厂家： ONSEMI    ONSEMI
描述：

-20V P沟道PowerTrench® MOSFET
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DATA SHEET  
www.onsemi.com  
MOSFET – P-Channel,  
POWERTRENCH)  
V
r
MAX  
I MAX  
D
DS  
DS(on)  
−20 V  
8 mW @ −4.5 V  
9.8 mW @ −2.5 V  
13 mW @ −1.8 V  
17 mW @ −1.5 V  
−18 A  
-20 V, -18 A, 8.0 mW  
FDMC510P  
General Description  
This P−Channel MOSFET is produce using onsemi’s advanced  
®
Pin 1  
POWERTRENCH process that has been optimized for r  
switching performance and ruggedness.  
,
DS(ON)  
G
S
S
S
Features  
D
D
D
D
• Max r  
• Max r  
• Max r  
• Max r  
= 8.0 mW at V = −4.5 V, I = −12 A  
GS D  
DS(on)  
DS(on)  
DS(on)  
DS(on)  
Top  
Bottom  
= 9.8 mW at V = −2.5 V, I = −10 A  
GS  
D
WDFN8 3.3x3.3, 0.65P  
(MLP 3.3x3.3)  
= 13 mW at V = −1.8 V, I = −9.3 A  
GS  
D
= 17 mW at V = −1.5 V, I = −8.3 A  
GS  
D
CASE 511DH  
• High Performance Trench Technology for Extremely Low r  
DS(on)  
• High Power and Current Handling Capability in a Widely Used  
MARKING DIAGRAM  
Surface Mount Package  
• 100% UIL Tested  
FDMC  
510P  
ALYW  
• HBM ESD Capability Level >2 kV Typical (Note 4)  
• This Device is Pb−Free, Halide Free and is RoHS Compliant  
Applications  
• Battery Management  
• Load Switch  
FDMC510P= Device Code  
A
= Assembly Site  
L
YW  
= Wafer Lot Number  
= Assembly Start Week  
PIN ASSIGNMENT  
D
D
D
D
5
6
7
8
4
3
2
1
G
S
S
S
P−Channel MOSFET  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 6 of  
this data sheet.  
© Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
August, 2022 − Rev. 4  
FDMC510P/D  
FDMC510P  
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
Symbol  
Parameter  
Ratings  
Unit  
V
V
DS  
V
GS  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current  
−20  
8
V
I
D
Continuous  
T
C
= 25°C  
−18  
A
Continuous (Note 1a)  
Pulsed  
T = 25°C  
A
−12  
−50  
E
Single Pulse Avalanche Energy  
Power Dissipation  
37  
41  
mJ  
W
AS  
P
T = 25°C  
C
D
Power Dissipation (Note 1a)  
T = 25°C  
A
2.3  
T , T  
Operating and Storage Junction Temperature Range  
−55 to + 150  
°C  
J
STG  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
THERMAL CHARACTERISTICS  
Symbol  
Parameter  
Ratings  
Unit  
Thermal Resistance, Junction to Case  
3
°C/W  
R
q
q
JC  
R
Thermal Resistance, Junction to Ambient (Note 1a)  
53  
JA  
2
1. R  
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R  
is guaranteed  
q
q
JC  
JA  
by design while R  
is determined by the user’s board design.  
q
JA  
2
a. 53°C/W when mounted on a 1 in pad  
b. 125°C/W when mounted on a minimum  
pad of 2 oz copper  
of 2 oz copper  
www.onsemi.com  
2
 
FDMC510P  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
J
Symbol  
Parameter  
Test Conditions  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
BV  
Drain to Source Breakdown Voltage  
I
I
= −250 mA, V = 0 V  
−20  
−
−
−
−
V
DSS  
D
GS  
Breakdown Voltage Temperature  
Coefficient  
= −250 mA, referenced to 25°C  
−12  
mV/°C  
DBVDSS  
DTJ  
D
I
Zero Gate Voltage Drain Current  
Gate to Source Leakage Current  
V
V
= −16 V, V = 0 V  
−
−
−
−
−1  
mA  
DSS  
GSS  
DS  
GS  
I
=
8 V, V = 0 V  
100  
nA  
GS  
DS  
ON CHARACTERISTICS  
V
Gate to Source Threshold Voltage  
V
I
= V , I = −250 mA  
−0.4  
−
−0.5  
3
−1.0  
−
V
GS(th)  
GS  
DS D  
Gate to Source Threshold Voltage  
Temperature Coefficient  
= −250 μA, referenced to 25°C  
mV/°C  
DVGS(th)  
DTJ  
D
r
Static Drain to Source  
On Resistance  
V
GS  
V
GS  
V
GS  
V
GS  
V
GS  
V
DS  
= −4.5 V, I = −12 A  
−
−
−
−
−
−
6.4  
7.6  
9.2  
11  
8.0  
9.8  
13  
17  
12  
−
mW  
DS(on)  
D
= −2.5 V, I = −10 A  
D
= −1.8 V, I = −9.3 A  
D
= −1.5 V, I = −8.3 A  
D
= −4.5 V, I = −12 A, T = 125°C  
8.5  
75  
D
J
g
FS  
Forward Transconductance  
= −5 V, I = −12 A  
S
D
DYNAMIC CHARACTERISTICS  
C
Input Capacitance  
V
DS  
= −10 V, V = 0 V, f = 1 MHz  
−
−
−
5910  
840  
7860  
1120  
1110  
pF  
pF  
pF  
iss  
GS  
C
oss  
Output Capacitance  
C
rss  
Reverse Transfer Capacitance  
738  
SWITCHING CHARACTERISTICS  
t
Turn−On Delay Time  
Rise Time  
V
R
= −10 V, I = −12 A, V = −4.5 V,  
−
−
−
−
−
−
−
−
15  
34  
27  
55  
540  
272  
116  
70  
−
ns  
ns  
d(on)  
DD  
D
GS  
= 6 W  
GEN  
t
r
t
Turn−Off Delay Time  
Fall Time  
338  
170  
83  
ns  
d(off)  
t
f
ns  
Q
g(TOT)  
Q
g(TOT)  
Total Gate Charge  
Total Gate Charge  
Gate to Source Charge  
Gate to Drain “Miller” Charge  
V
GS  
V
GS  
V
DD  
= 0 V to −4.5 V, V = −10 V, I = −12 A  
nC  
nC  
nC  
nC  
DD  
D
= 0 V to −2.5 V, V = −10 V, I = −12 A  
50  
DD  
D
Q
Q
= −10 V, I = −12 A  
6.3  
20.4  
gs  
gd  
D
−
DRAIN−SOURCE DIODE CHARACTERISTICS  
V
Source to Drain Diode Forward  
Voltage  
V
V
= 0 V, I = −12 A (Note 2)  
−
−
−
−
−0.70  
−0.53  
35  
−1.3  
−1.2  
57  
V
SD  
GS  
S
= 0 V, I = −2 A (Note 2)  
GS  
S
t
Reverse Recovery Time  
I = −12 A, di/dt = 100 A/ms  
F
ns  
rr  
Q
Reverse Recovery Charge  
20  
32  
nC  
rr  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.  
3. Starting T = 25°C; P−Ch: L = 3 mH, I = −5 A, VDD = −20 V, V = −4.5 V.  
J
AS  
GS  
4. No gate overvoltage rating is implied.  
www.onsemi.com  
3
 
FDMC510P  
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
J
50  
40  
30  
20  
10  
0
5
PULSE DURATION = 80 ms  
DUTY CYCLE = 0.5% MAX  
V
= −1.5 V  
GS  
4
3
2
1
0
V
= −4.5 V  
V
= −1.2 V  
GS  
GS  
V
GS  
= −2.5 V  
V
= −1.8 V  
GS  
V
GS  
= −1.5 V  
V
= −1.8 V  
= −4.5 V  
GS  
V
GS  
= −1.2 V  
V
GS  
PULSE DURATION = 80 ms  
DUTY CYCLE = 0.5% MAX  
V
GS  
= −2.5 V  
0.0  
0.5  
1.0  
1.5  
2.0  
0
10  
20  
30  
40  
50  
−V , DRAIN TO SOURCE VOLTAGE (V)  
DS  
−I , DRAIN CURRENT (A)  
D
Figure 1. On Region Characteristics  
Figure 2. Normalized On−Resistance vs.  
Drain Current and Gate Voltage  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
25  
I
V
= −12 A  
PULSE DURATION = 80 ms  
DUTY CYCLE = 0.5% MAX  
D
= −4.5 V  
GS  
20  
I
D
= −12 A  
15  
10  
5
T = 125°C  
J
T = 25°C  
J
0
1.0  
−75 −50 −25  
0
25 50 75 100 125 150  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
T , JUNCTION TEMPERATURE (°C)  
J
−V , GATE TO SOURCE VOLTAGE (V)  
GS  
Figure 3. Normalized On Resistance vs.  
Junction Temperature  
Figure 4. On−Resistance vs. Gate to Source  
Voltage  
50  
100  
V
GS  
= 0 V  
PULSE DURATION = 80 ms  
DUTY CYCLE = 0.5% MAX  
40  
V
DD  
= −5 V  
10  
1
T = 150°C  
J
30  
20  
10  
0
T = 150°C  
J
T = 25°C  
J
T = 25°C  
J
0.1  
0.01  
T = −55°C  
J
T = −55°C  
J
0.0  
0.5  
1.0  
1.5  
2.0  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
−V , GATE TO SOURCE VOLTAGE (V)  
GS  
−V , BODY DIODE FORWARD VOLTAGE (V)  
SD  
Figure 5. Transfer Characteristics  
Figure 6. Source to Drain Diode Forward  
Voltage vs. Source Current  
www.onsemi.com  
4
FDMC510P  
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)  
J
4.5  
3.0  
1.5  
0.0  
20000  
10000  
I
D
= −12 A  
C
iss  
V
DD  
= −8 V  
V
= −12 V  
DD  
V
DD  
= −10 V  
C
oss  
1000  
400  
f = 1 MHz  
= 0 V  
V
C
GS  
rss  
0
20  
40  
60  
80  
100  
0.1  
1
10  
20  
Q , GATE CHARGE (nC)  
g
−V , DRAIN TO SOURCE VOLTAGE (V)  
DS  
Figure 7. Gate Charge Characteristics  
Figure 8. Capacitance vs. Drain to Source Voltage  
60  
50  
20  
10  
V
GS  
= −4.5 V  
40  
30  
20  
10  
0
T = 25°C  
J
V
= −2.5 V  
GS  
T = 100°C  
J
T = 125°C  
J
LIMITED BY PACKAGE  
50 75  
R
= 3°C/W  
q
JC  
1
0.1  
1
10  
100  
1000  
25  
100  
125  
150  
t , TIME IN AVALANCHE (ms)  
AV  
T , CASE TEMPERATURE (°C)  
C
Figure 9. Unclamped Inductive Switching  
Capability  
Figure 10. Maximum Continuous Drain  
Current vs. Case Temperature  
100  
1000  
SINGLE PULSE  
= 125°C/W  
T = 25°C  
A
100 ms  
1 ms  
R
q
JA  
10  
1
100  
10  
10 ms  
THIS AREA IS  
LIMITED BY r  
100 ms  
DS(on)  
1 s  
SINGLE PULSE  
T = MAX RATED  
10 s  
DC  
0.1  
J
R
= 125°C/W  
q
JA  
1
T = 25°C  
A
0.01  
0.5  
10−4 10−3 10−2 10−1  
1
10  
100 1000  
0.01  
0.1  
1
10  
80  
−V , DRAIN TO SOURCE VOLTAGE (V)  
DS  
t, PULSE WIDTH (s)  
Figure 11. Forward Bias Safe Operating Area  
Figure 12. Single Pulse Maximum Power  
Dissipation  
www.onsemi.com  
5
FDMC510P  
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)  
J
2
1
DUTY−CYCLEDESCENDING ORDER  
D = 0.5  
0.2  
0.1  
P
DM  
0.05  
0.02  
0.01  
0.1  
0.01  
t
1
t
2
NOTES:  
DUTY FACTOR, D = t / t  
1
2
SINGLE PULSE  
= 125°C/W  
PEAK T = P  
x Z  
x R  
+ T  
JA A  
q
q
J
DM  
JA  
R
q
JA  
0.001  
10−4  
10−3  
10 −2  
t, RECTANGULAR PULSE DURATION (s)  
10−1  
1
10  
1000  
100  
Figure 13. Transient Thermal Response Curve  
PACKAGE MARKING AND ORDERING INFORMATION  
†
Device  
Device Marking  
Package  
Reel Size  
Tape Width  
Shipping  
FDMC510P  
FDMC510P  
WDFN8 3.3x3.3, 0.65P (MLP 3.3x3.3)  
(Pb−Free and Halide Free)  
13”  
12 mm  
3000 / Tape & Reel  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
POWERTRENCH is registered trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United  
States and/or other countries.  
www.onsemi.com  
6
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
WDFN8 3.3x3.3, 0.65P  
CASE 511DH  
ISSUE O  
DATE 31 JUL 2016  
(3.40)  
2.37  
0.05 C  
B
3.30  
A
8
5
2X  
0.45(4X)  
(0.40)  
2.15  
3.30  
(1.70)  
KEEP OUT  
AREA  
(0.65)  
0.70(4X)  
0.05 C  
PIN#1 IDENT  
1
4
TOP VIEW  
0.65  
0.42(8X)  
2X  
1.95  
RECOMMENDED LAND PATTERN  
0.75 0.05  
0.10 C  
0.15 0.05  
0.08 C  
0.025 0.025  
NOTES:  
C
SIDE VIEW  
SEATING  
PLANE  
A. DOES NOT CONFORM TO JEDEC  
REGISTRATION MO−229  
B. DIMENSIONS ARE IN MILLIMETERS.  
3.30 0.05  
2.27 0.05  
C. DIMENSIONS AND TOLERANCES PER  
ASME Y14.5M, 2009.  
(0.50)4X  
(0.35)  
PIN #1 IDENT  
0.50 0.05 (4X)  
(0.79)  
D. LAND PATTERN RECOMMENDATION IS  
EXISTING INDUSTRY LAND PATTERN.  
1
4
(1.15)  
3.30 0.05  
2.00 0.05  
R0.15  
0.30 0.05 (3X)  
8
5
0.35 0.05 (8X)  
0.65  
0.10  
0.05  
C A B  
C
1.95  
BOTTOM VIEW  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON13625G  
WDFN8 3.3X3.3, 0.65P  
PAGE 1 OF 1  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the  
rights of others.  
© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
onsemi,  
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates  
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.  
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any  
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the  
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use  
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products  
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information  
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may  
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license  
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems  
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should  
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
ADDITIONAL INFORMATION  
TECHNICAL PUBLICATIONS:  
Technical Library: www.onsemi.com/design/resources/technical−documentation  
onsemi Website: www.onsemi.com  
ONLINE SUPPORT: www.onsemi.com/support  
For additional information, please contact your local Sales Representative at  
www.onsemi.com/support/sales  

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