FDMC7660 [ONSEMI]
N 沟道，PowerTrench® MOSFET，30V，20A，2.2mΩ;
| 型号： | FDMC7660 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，30V，20A，2.2mΩ 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：405K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDMC7660
General Description
N-Channel PowerTrench® MOSFET
This
N-Channel
MOSFET
is produced using ON
Semiconductor’s advanced PowerTrench® process that has
been especially tailored to minimize the on-state resistance. This
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
30 V, 20 A, 2.2 mΩ
Features
Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 20 A
Max rDS(on) = 3.3 mΩ at VGS = 4.5 V, ID = 18 A
High performance technology for extremely low rDS(on)
Termination is Lead-free and RoHS Compliant
Applications
DC - DC Buck Converters
Point of Load
High Efficiency Load Switch and Low Side Switching
Bottom
S
Top
Pin 1
S
D
S
S
S
S
G
G
D
D
D
D
D
D
D
Power 33
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
30
±20
V
V
(Note 4)
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
TC = 25°C
TC = 25°C
TA = 25°C
40
100
ID
A
(Note 1a)
(Note 3)
20
-Pulsed
200
EAS
Single Pulse Avalanche Energy
Power Dissipation
200
mJ
W
TC = 25°C
TA = 25°C
41
PD
Power Dissipation
(Note 1a)
2.3
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to + 150
°C
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
3
°C/W
(Note 1a)
53
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13’’
Tape Width
12 mm
Quantity
FDMC7660
FDMC7660
Power 33
3000 units
©2012 Semiconductor Components Industries, LLC.
October-2017, Rev.3
Publication Order Number:
FDMC7660/D
1
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
30
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
I
D = 250 μA, referenced to 25°C
14
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = 24 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
1
μA
100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
1.2
1.7
-6
2.5
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25°C
mV/°C
V
GS = 10 V, ID = 20 A
1.8
2.6
2.2
163
2.2
3.3
3.1
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
VGS = 4.5 V, ID = 18 A
mΩ
VGS = 10 V, ID = 20 A, TJ = 125°C
VDS = 5 V, ID = 20 A
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
3630
1345
110
4830
1790
165
pF
pF
pF
Ω
V
DS = 15 V, VGS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
f = 1MHz
0.9
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
14
6.8
36
25
14
58
11
86
38
ns
ns
V
DD = 15 V, ID = 20 A,
VGS = 10 V, RGEN = 6 Ω
Turn-Off Delay Time
Fall Time
ns
5.7
54
ns
Qg
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VGS = 0 V to 10 V
nC
nC
nC
nC
Qg
VGS = 0 V to 4.5 V
24
V
DD = 15 V,
ID = 20 A
Qgs
Qgd
11
5.6
Drain-Source Diode Characteristics
V
GS = 0 V, IS = 20 A
(Note 2)
(Note 2)
0.8
0.7
45
1.2
1.2
63
VSD
Source-Drain Diode Forward Voltage
V
VGS = 0 V, IS = 1.9 A
trr
Reverse Recovery Time
ns
IF = 20 A, di/dt = 100 A/μs
Qrr
Reverse Recovery Charge
25
35
nC
Notes:
1. R
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
θJA
θJC
is guaranteed by design while R
is determined by the user’s board design.
θJA
b.
125 °C/W when mounted on
a minimum pad of 2 oz copper
a.
53 °C/W when mounted on a
1 in pad of 2 oz copper
2
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting T = 25 °C, L = 1 mH, I = 20 A, V = 27 V, V = 10 V
GS
J
AS
DD
4. As an N-channel device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.
www.onsemi.com
2
Typical Characteristics TJ = 25°C unless otherwise noted
200
3.0
2.5
2.0
1.5
1.0
0.5
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 10 V
150
VGS = 3 V
VGS = 4.5 V
VGS = 3.5 V
VGS = 4 V
100
VGS = 4 V
VGS = 3.5 V
50
VGS = 10 V
150
VGS = 4.5 V
100
VGS = 3 V
0
0.0
0.5
1.0
1.5
2.0
0
50
200
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
1.6
15
ID = 20 A
ID = 20 A
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 10 V
1.4
1.2
1.0
0.8
10
5
TJ = 125oC
TJ = 25 o
C
0
-75 -50 -25
0
25 50 75 100 125 150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
200
200
100
VGS = 0 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
150
100
50
TJ = 150 o
C
VDS = 5 V
TJ = 150 o
C
10
1
TJ = 25 oC
TJ = 25 o
C
TJ = -55 o
C
TJ = -55 o
C
0.1
0.2
0
0.4
0.6
0.8
1.0
1.2
1
2
3
4
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
www.onsemi.com
3
Typical Characteristics TJ = 25°C unless otherwise noted
10
10
1
ID = 20 A
Ciss
8
VDD = 10 V
6
Coss
VDD = 15 V
4
Crss
VDD = 20 V
f = 1 MHz
= 0 V
2
V
GS
0.1
0
0.05
30
150
103
0.1
1
10
0
20
40
60
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
150
100
50
30
RθJC = 3 oC/W
VGS = 10 V
TJ = 25 oC
TJ = 100 o
10
C
VGS = 4.5 V
TJ = 125 o
C
Limited by Package
0
25
1
0.01
0.1
1
10
100 300
50
75
100
125
TC, CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE (ms)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10. Maximum Continuous Drain
Current vs Case Temperature
300
100
1000
DERIVED FROM
TESTED DATA
SINGLE PULSE
θJA = 125 oC/W
TA = 25 oC
R
100
10
10
1
1 ms
THIS AREA IS
LIMITED BY rDS(on)
10 ms
100 ms
1 s
SINGLE PULSE
T
J = MAX RATED
θJA = 125 oC/W
TA = 25 oC
0.1
10 s
R
DC
1
0.01
0.5
10-3
10-2
10-1
t, PULSE WIDTH (sec)
100
101
102
0.01
0.1
1
10
100
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
Figure12. Single Pulse Maximum
Power Dissipation
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4
Typical Characteristics TJ = 25°C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
P
DM
0.1
0.1
0.05
0.02
0.01
t
1
t
2
0.01
NOTES:
DUTY FACTOR: D = t /t
1
2
SINGLE PULSE
PEAK T = P
x Z
x R
+ T
θJA A
J
DM
θJA
R
θJA = 125 oC/W
1E-3
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (sec)
100
101
100
1000
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
www.onsemi.com
5
Dimensional Outline and Pad Layout
www.onsemi.com
6
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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❖
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