FDMC7664 [ONSEMI]
N 沟道，PowerTrench® MOSFET，30V，18.8A，4.2mΩ;
| 型号： | FDMC7664 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，30V，18.8A，4.2mΩ 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总9页 (文件大小：474K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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June 2014
FDMC7664
N-Channel PowerTrench® MOSFET
30 V, 18.8 A, 4.2 mΩ
Features
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance. This
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 18.8 A
Max rDS(on) = 5.5 mΩ at VGS = 4.5 V, ID = 16.1 A
High performance technology for extremely low rDS(on)
Termination is Lead-free and RoHS Compliant
Applications
DC - DC Buck Converters
Notebook battery power management
Load switch in Notebook
Top
Bottom
4
3
2
1
G
S
S
S
D
D
D
5
6
7
8
Pin 1
G
S
S
S
D
D
D
D
D
MLP 3.3x3.3
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
30
±20
V
V
TC = 25 °C
TA = 25 °C
24
ID
(Note 1a)
(Note 3)
18.8
60
A
-Pulsed
EAS
Single Pulse Avalanche Energy
Power Dissipation
188
mJ
W
TC = 25 °C
TA = 25 °C
45
PD
Power Dissipation
(Note 1a)
2.3
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
2.8
53
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13 ’’
Tape Width
12 mm
Quantity
FDMC7664
FDMC7664
MLP 3.3x3.3
3000 units
©2009 Fairchild Semiconductor Corporation
FDMC7664 Rev.C4
www.fairchildsemi.com
1
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
30
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
I
D = 250 μA, referenced to 25 °C
DS = 24 V, VGS = 0 V
TJ = 125 °C
12
mV/°C
V
1
IDSS
IGSS
Zero Gate Voltage Drain Current
μA
250
100
Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
D = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 18.8 A
GS = 4.5 V, ID = 16.1 A
1.0
1.9
-7
3.0
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
I
mV/°C
3.6
4.5
4.2
5.5
V
rDS(on)
Static Drain to Source On Resistance
Forward Transconductance
mΩ
VGS = 10 V, ID = 18.8 A
TJ = 125 °C
4.4
5.4
gFS
VDD = 5 V, ID = 18.8 A
115
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
3655
1100
115
4865
1465
170
pF
pF
pF
Ω
VDS = 15 V, VGS = 0 V
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
0.8
2.2
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Qg
Turn-On Delay Time
Rise Time
15
7
27
14
59
12
76
34
ns
ns
VDD = 15 V, ID = 18.8 A
V
GS = 10 V, RGEN = 6 Ω
Turn-Off Delay Time
Fall Time
37
6
ns
ns
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V
55
25
12
6
nC
nC
nC
nC
VDD = 15 V
D = 18.8 A
I
Qgs
Qgd
Drain-Source Diode Characteristics
V
GS = 0 V, IS = 18.8 A
(Note 2)
(Note 2)
0.83
0.71
41
1.2
1.2
65
VSD
Source to Drain Diode Forward Voltage
V
VGS = 0 V, IS = 1.9 A
trr
Reverse Recovery Time
ns
IF = 18.8 A, di/dt = 100 A/μs
Qrr
Reverse Recovery Charge
20
35
nC
NOTES:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R is determined by
θCA
θJA
θJC
the user's board design.
a. 53 °C/W when mounted on
a 1 in pad of 2 oz copper
b.125 °C/W when mounted on
a minimum pad of 2 oz copper
2
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
o
3. E
of 188 mJ is based on starting T = 25 C, L = 1 mH, I = 19.4 A, V = 27 V, V = 10 V.
AS
J
AS
DD
GS
©2009 Fairchild Semiconductor Corporation
FDMC7664 Rev.C4
www.fairchildsemi.com
2
Typical Characteristics TJ = 25 °C unless otherwise noted
60
5
4
3
2
1
0
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 3 V
VGS = 10 V
VGS = 6 V
45
30
15
0
VGS = 4.5 V
VGS = 4 V
VGS = 3.5 V
VGS = 3.5 V
VGS = 4 V
VGS = 4.5 V
VGS = 3 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 10 V
VGS = 6 V
0.0
0.3
0.6
0.9
1.2
0
15
30
45
60
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs. Drain Current and Gate Voltage
1.6
12
ID = 18.8 A
GS = 10 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
V
1.4
1.2
1.0
0.8
0.6
9
6
3
0
ID = 18.8 A
TJ = 125 o
C
TJ = 25 o
C
-75 -50 -25
0
25 50 75 100 125 150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs. Junction Temperature
Figure4. On-Resistance vs. Gate to
Source Voltage
60
100
PULSE DURATION = 80 μs
VGS = 0 V
DUTY CYCLE = 0.5% MAX
10
1
45
30
15
0
VDS = 5 V
TJ = 150 o
C
TJ = 25 oC
TJ = 25 o
C
TJ = 150 o
C
0.1
TJ = -55 o
C
0.01
0.001
TJ = -55 o
C
1
2
3
4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs. Source Current
©2009 Fairchild Semiconductor Corporation
FDMC7664 Rev.C4
www.fairchildsemi.com
3
Typical Characteristics TJ = 25 °C unless otherwise noted
10
7000
1000
Ciss
ID = 18.8 A
8
Coss
VDD = 10 V
VDD = 15 V
6
4
2
0
VDD = 20 V
Crss
f = 1 MHz
= 0 V
100
50
V
GS
30
0
15
30
Q , GATE CHARGE (nC)
45
60
0.1
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
g
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s . D r a i n
to Source Voltage
90
80
70
60
50
40
30
20
30
10
VGS = 10 V
TJ = 25 oC
VGS = 4.5 V
TJ = 100 oC
TJ = 125 o
C
10 Limited by Package
RθJC = 3.0 oC/W
0
25
1
0.01
0.1
1
10
100
1000
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE (ms)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10. Maximum Continuous Drain
Current vs. Case Temperature
100
10
2000
VGS = 10 V
1000
100
10
100 us
1 ms
10 ms
100 ms
1
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
TJ = MAX RATED
1 s
0.1
SINGLE PULSE
RθJA = 125 oC/W
10 s
DC
R
θJA = 125 oC/W
TC = 25 oC
T
C = 25 oC
1
0.01
0.5
10-4
10-3
10-2
t, PULSE WIDTH (sec)
10-1
1
10
102
103
200
0.01
0.1
1
10
100
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
Figure12. Single Pulse Maximum
Power Dissipation
©2009 Fairchild Semiconductor Corporation
FDMC7664 Rev.C4
www.fairchildsemi.com
4
Typical Characteristics TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
DM
t
0.01
1
t
2
SINGLE PULSE
θJA = 125 oC/W
NOTES:
DUTY FACTOR: D = t /t
1
2
R
PEAK T = P
J
x Z
x R
+ T
DM
θJA
θJA A
0.001
(Note 1b)
0.0005
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
©2009 Fairchild Semiconductor Corporation
FDMC7664 Rev.C4
www.fairchildsemi.com
5
Dimensional Outline and Pad Layout
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, spe-
cifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_MLDEU-C08
©2009 Fairchild Semiconductor Corporation
FDMC7664 Rev.C4
www.fairchildsemi.com
6
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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
AX-CAP *
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
F-PFS™
FRFET
®*
®
®
®
tm
®
Global Power ResourceSM
GreenBridge™
Green FPS™
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
™
®
TinyBoost
TinyBuck
®
TinyCalc™
®
Green FPS™ e-Series™
Gmax™
GTO™
®
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
Current Transfer Logic™
IntelliMAX™
®
DEUXPEED
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Dual Cool™
TranSiC™
®
EcoSPARK
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
TriFault Detect™
TRUECURRENT *
EfficentMax™
ESBC™
®
μSerDes™
SMART START™
®
Solutions for Your Success™
®
®
SPM
Fairchild
®
®
STEALTH™
SuperFET
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS
SyncFET™
Sync-Lock™
UHC
Fairchild Semiconductor
FACT Quiet Series™
®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
®
®
mWSaver
OptoHiT™
OPTOLOGIC
OPTOPLANAR
FACT
FAST
®
®
FastvCore™
FETBench™
FPS™
®
®
仙童™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
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Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
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Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I68
©2009 Fairchild Semiconductor Corporation
FDMC7664 Rev.C4
7
www.fairchildsemi.com
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
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designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
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