FDMC7678 [ONSEMI]
N 沟道,PowerTrench® MOSFET,30V,19.5A,5.3mΩ;型号: | FDMC7678 |
厂家: | ONSEMI |
描述: | N 沟道,PowerTrench® MOSFET,30V,19.5A,5.3mΩ 开关 脉冲 光电二极管 晶体管 |
文件: | 总8页 (文件大小:412K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – N-Channel,
POWERTRENCH)
V
R
MAX
I MAX
D
DSS
DS(on)
30 V
5.3 mW @ 10 V
6.8 mW @ 4.5 V
19.5 A
30 V, 19.5 A, 5.3 mW
Pin 1
S
8
S
S
G
7
FDMC7678
6
5
D
1
General Description
D
2
D
3
D
This N−Channel MOSFET is produced using onsemi’s advanced
4
®
POWERTRENCH process that has been especially tailored to
Bottom
Top
minimize the on−state resistance. This device is well suited for Power
Management and load switching applications common in Notebook
Computers and Portable Battery Packs.
WDFN8 3.3x3.3, 0.65P
CASE 511DR
Features
MARKING DIAGRAM
• Max r
• Max r
= 5.3 mW at V = 10 V, I = 17.5 A
GS D
DS(on)
DS(on)
= 6.8 mW at V = 4.5 V, I = 15.0 A
GS
D
FDMC
7678
AYWWG
G
• High Performance Technology for Extremely Low r
DS(on)
• This Device is Pb−Free, Halide Free and is RoHS Compliant
Applications
FDMC7678 = Specific Device Code
• DC − DC Buck Converters
• Notebook Battery Power Management
• Load Switch in Notebook
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
D
D
D
D
5
6
7
8
4
3
2
1
G
S
S
S
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
December, 2022 − Rev. 3
FDMC7678/D
FDMC7678
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Ratings
Unit
V
V
DS
V
GS
Drain to Source Voltage
30
Gate to Source Voltage (Note 3)
Drain Current
20
V
I
D
Continuous (Package Limited)
Continuous (Silicon Limited)
Continuous (Note 1a)
Pulsed
T
T
= 25°C
= 25°C
19.5
A
C
63
C
T = 25°C
A
17.5
70
A
mJ
W
E
AS
Single Pulse Avalanche Energy (Note 4)
Power Dissipation
54
31
P
D
T = 25°C
C
Power Dissipation (Note 1a)
T = 25°C
A
2.3
T , T
Operating and Storage Junction Temperature Range
−55 to + 150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
4.0
Unit
R
Thermal Resistance, Junction to Case
°C/W
q
JC
R
Thermal Resistance, Junction to Ambient (Note 1a)
53
q
JA
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed
q
q
JC
JA
by design while R
is determined by the user’s board design.
q
CA
2
a. 53°C/W when mounted on a 1 in pad
b. 125°C/W when mounted on a minimum
pad of 2 oz copper
of 2 oz copper
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2
FDMC7678
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 250 mA, V = 0 V
30
−
−
−
V
DSS
D
GS
Breakdown Voltage Temperature
Coefficient
= 250 mA, referenced to 25°C
−
21
mV/°C
DBVDSS
DTJ
D
I
Zero Gate Voltage Drain Current
V
V
= 24 V, V = 0 V
−
−
−
−
1
mA
DSS
GSS
DS
GS
I
Gate to Source Leakage Current,
Forward
= 20 V, V = 0 V
100
nA
GS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = 250 mA
1.2
1.5
3.0
V
GS(th)
GS
DS D
Gate to Source Threshold Voltage
Temperature Coefficient
= 250 μA, referenced to 25°C
−
−5
−
mV/°C
DVGS(th)
DTJ
D
r
Static Drain to Source
On Resistance
V
GS
V
GS
V
GS
V
DS
= 10 V, I = 17.5 A
−
−
−
−
4.2
5.1
5.7
90
5.3
6.8
7.2
−
mW
DS(on)
D
= 4.5 V, I = 15.0 A
D
= 10 V, I = 17.5A, T = 125°C
D
J
g
FS
Forward Transconductance
= 5 V, I = 17.5 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 15 V, V = 0 V, f = 1 MHz
−
−
−
−
1810
620
75
2410
820
110
2.5
pF
pF
pF
W
iss
GS
C
oss
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C
rss
R
0.7
g
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Rise Time
V
V
= 15 V, I = 17.5 A,
−
−
−
−
−
−
−
−
10
4
19
10
41
10
39
19
−
ns
ns
d(on)
DD
GS
D
= 10 V, R
= 6 W
GEN
t
r
t
Turn−Off Delay Time
Fall Time
26
3
ns
d(off)
t
f
ns
Q
g(TOT)
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V
GS
V
GS
V
DD
= 0 V to 10 V, V = 15 V, I = 17.5 A
28
14
4.4
3.9
nC
nC
nC
nC
DD
D
= 0 V to 4.5 V, V = 15 V, I = 17.5 A
DD
D
Q
Q
= 15 V, I = 17.5 A
D
gs
−
gd
DRAIN−SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward
Voltage
V
V
= 0 V, I = 1.9 A (Note 2)
−
−
−
−
0.7
0.8
30
1.2
1.2
49
V
SD
GS
S
= 0 V, I = 17.5 A (Note 2)
GS
S
t
Reverse Recovery Time
I = 17.5 A, di/dt = 100 A/ms
F
ns
rr
Q
Reverse Recovery Charge
13
23
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. As an N−ch device, the negative V rating is for low duty cycle pulse occurence only. No continuous rating is implied.
GS
4. E of 54 mJ is based on starting T = 25°C, L = 0.3 mH, I = 19 A, V = 27 V, V = 10 V.
AS
J
AS
DD
GS
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3
FDMC7678
TYPICAL CHARACTERISTICS (T = 25°C UNLESS OTHERWISE NOTED)
J
70
60
4
V
= 10 V
GS
V
= 6 V
GS
V
= 4.5 V
GS
3
2
1
0
50
40
30
20
10
0
V
GS
= 3 V
V
= 3.5 V
GS
V
= 3 V
V
GS
= 3.5 V
GS
V
GS
= 4.5 V
V
= 10 V
GS
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
= 6 V
60
GS
0.0
0.5
1.0
1.5
2.0
0
10
20
30
40
50
70
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 1. On Region Characteristics
Figure 2. Normalized On−Resistance vs.
Drain Current and Gate Voltage
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
12
10
8
I
V
= 17.5 A
= 10 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
D
GS
I
D
= 17.5 A
T = 125°C
J
6
4
T = 25°C
J
2
−75 −50 −25
0
25 50 75 100 125 150
2
4
6
8
10
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance vs.
Junction Temperature
Figure 4. On−Resistance vs. Gate to
Source Voltage
70
60
50
40
30
20
10
0
100
10
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
GS
= 0 V
T = 150°C
J
V
DS
= 5 V
T = 25°C
J
1
T = 150°C
J
T = 25°C
J
0.1
0.01
T = −55°C
J
T = −55°C
J
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.0
1.5
2.0
2.5
3.0
3.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs. Source Current
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4
FDMC7678
TYPICAL CHARACTERISTICS (T = 25°C UNLESS OTHERWISE NOTED) (CONTINUED)
J
10
3000
I
D
= −17.5 A
V
DD
= 10 V
C
iss
8
6
4
2
0
1000
C
oss
V
= 15 V
DD
V
DD
= 20 V
100
30
f = 1 MHz
= 0 V
C
rss
V
GS
1
0
5
10
15
20
25
0.1
10
, DRAIN TO SOURCE VOLTAGE (V)
DS
30
30
Q , GATE CHARGE (nC)
V
g
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain to Source Voltage
70
30
R
= 4.0°C/W
q
JC
60
50
40
T = 25°C
J
10
V
GS
= 10 V
T = 100°C
J
V
GS
= 4.5 V
30
20
10
0
T = 125°C
J
Limited by Package
1
0.001 0.01
0.1
1
10
100
25
50
75
100
125
150
t , TIME IN AVALANCHE (ms)
AV
T , CASE TEMPERATURE (°C)
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
2000
100
1000
100 ms
10
1
1 ms
100
10 ms
THIS AREA IS
LIMITED BY r
100 ms
DS(on)
10
SINGLE PULSE
SINGLE PULSE
= 125°C/W
0.1
1 s
10 s
DC
T = MAX RATED
J
R
q
JA
R
= 125°C/W
q
JA
T = 25°C
A
1
0.5
T = 25°C
A
0.01
10−4 10−3 10−2 10−1
1
10
100 1000
0.1
1
10
100 200
0.01
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
t, PULSE WIDTH (s)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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5
FDMC7678
TYPICAL CHARACTERISTICS (T = 25°C UNLESS OTHERWISE NOTED) (CONTINUED)
J
2
1
DUTY−CYCLEDESCENDING ORDER
D = 0.5
0.2
P
DM
0.1
t
1t2
0.1
0.05
0.02
0.01
0.01
NOTES:
DUTY FACTOR, D = t / t
SINGLE PULSE
1
2
R
= 125°C/W
q
JA
PEAK T = P
x Z
x R
+ T
q
q
JA
J
DM
JA
A
0.001
0.0005
10−4
10−3
10 −2
10−1
1
10
1000
100
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Junction−to−Ambient Transient Thermal Response Curve
PACKAGE MARKING AND ORDERING INFORMATION
†
Device
Device Marking
Package
Reel Size
Tape Width
Shipping
FDMC7678
FDMC7678
WDFN8 3.3x3.3, 0.65P
(Pb−Free and Halide Free)
13”
12 mm
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
POWERTRENCH is registered trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511DR
ISSUE B
DATE 02 FEB 2022
GENERIC
MARKING DIAGRAM*
XXXX = Specific Device Code
*This information is generic. Please refer to
A
Y
= Assembly Location
= Year
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
XXXX
AYWWG
G
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13650G
WDFN8 3.3x3.3, 0.65P
PAGE 1 OF 1
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the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2018
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