FDMC7696 [ONSEMI]
N 沟道，PowerTrench® MOSFET，30V，12A，11.5mΩ;
| 型号： | FDMC7696 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，30V，12A，11.5mΩ 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：417K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – N-Channel,
POWERTRENCH)
V
r
MAX
I
D
MAX
DS
DS(on)
30 V
11.5 mW @ 10 V
14.5 mW @ 4.5 V
12 A
30 V, 12 A, 11.5 mW
FDMC7696
Pin 1
8
S
S
7
6
S
5
G
General Description
This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to minimize
the on−state resistance. This device is well suited for Power
Management and load switching applications common in Notebook
Computers and Portable Battery Packs.
1
2
D
D
D
3
D
4
Top
Bottom
WDFN8 3.3x3.3, 0.65P
CASE 511DR
Features
• Max r
• Max r
= 11.5 mW at V = 10 V, I = 12 A
GS D
DS(on)
DS(on)
= 14.5 mW at V = 4.5 V, I = 10 A
GS
D
MARKING DIAGRAM
• High Performance Technology for Extremely Low r
DS(on)
• This Device is Pb−Free, Halide Free and RoHS Compliant
$Y&Z&2&K
FDMC
Applications
7696
• DC/DC Buck Converters
• Notebook Battery Power Management
• Load Switch in Notebook
$Y
&Z
&2
&K
= Logo
= Assembly Plant Code
= 2−Digit Date Code Format
= 2−Digits Lot Run Traceability Code
FDMC7696 = Device Code
PIN ASSIGNMENT
G
S
D
D
D
D
5
6
7
8
4
3
2
1
S
S
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
© Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
September, 2022 − Rev. 3
FDMC7696/D
FDMC7696
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Ratings
Unit
V
V
DS
Drain to Source Voltage
30
V
Drain to Source Transient Voltage (t
Gate to Source Voltage (Note 3)
Drain Current
< 100 ns)
33
V
DSt
Transient
V
20
V
GS
I
Continuous (Package limited)
Continuous (Silicon limited)
Continuous (Note 1a)
Pulsed
T
T
= 25°C
= 25°C
20
A
D
C
38
C
T = 25°C
A
12
50
E
Single Pulse Avalanche Energy (Note 2)
Power Dissipation
21
25
mJ
W
AS
P
T = 25°C
C
D
Power Dissipation (Note 1a)
T = 25°C
A
2.4
T , T
Operating and Storage Junction Temperature Range
−55 to +150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
RqJC
Parameter
Ratings
5.0
Unit
Thermal Resistance, Junction to Case
°C/W
RqJA
Thermal Resistance, Junction to Ambient (Note 1a)
53
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed
q
q
JC
JA
by design while R
is determined by the user’s board design.
q
CA
a. 53°C/W when mounted on
b. 125°C/W when mounted on
a minimum pad of 2 oz copper
2
a 1 in pad of 2 oz copper
2. E of 21 mJ is based on starting T = 25°C; L = 0.3 mH, I = 12 A, V = 27 V, V = 10 V.
AS
J
AS
DD
GS
3. As an N−ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
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2
FDMC7696
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 250 mA, V = 0 V
30
−
−
−
V
DSS
D
GS
Breakdown Voltage Temperature
Coefficient
= 250 mA, referenced to 25°C
−
14
mV/°C
DBVDSS
DTJ
D
I
Zero Gate Voltage Drain Current
V
V
= 24 V, V = 0 V
−
−
−
−
1
mA
DSS
GSS
DS
GS
I
Gate to Source Leakage Current, Forward
= 20 V, V = 0 V
100
nA
GS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = 250 mA
1.2
2.0
3.0
V
GS(th)
GS
DS
D
Gate to Source Threshold Voltage
Temperature Coefficient
= 250 mA, referenced to 25°C
−
−6
−
mV/°C
DVGS(th)
DTJ
D
r
Static Drain to Source On Resistance
Forward Transconductance
V
GS
V
GS
V
GS
V
DS
= 10 V, I = 12 A
−
−
−
−
8.5
11.5
11.6
45
11.5
14.5
15.7
−
mW
DS(on)
D
= 4.5 V, I = 10 A
D
= 10 V, I = 12 A, T = 125°C
D
J
g
FS
= 5 V, I = 12 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 15 V, V = 0 V, f = 1 MHz
−
−
1075
380
40
1430
505
55
pF
pF
pF
W
iss
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
−
rss
R
0.2
1.0
2.0
g
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Rise Time
V
= 15 V, I = 12 A, V = 10 V,
GEN
−
−
−
−
−
−
−
−
9
2
18
10
33
10
22
11
−
ns
ns
ns
ns
nC
d(on)
DD
D
GS
R
= 6 W
t
r
t
Turn−Off Delay Time
Fall Time
19
2
d(off)
t
f
Q
Total Gate Charge
V
GS
V
GS
V
DD
= 0 V to 10 V, V = 15 V, I = 12 A
16
8
g
DD
D
= 0 V to 5 V, V = 15 V, I = 12 A
DD
D
Q
Gate to Source Charge
= 15 V, I = 12 A
3.2
1.8
nC
nC
gs
D
Q
Gate to Drain “Miller” Charge
−
gd
DRAIN−SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward Voltage
V
V
= 0 V, I = 1.9 A (Note 4)
−
−
−
−
0.75
0.84
25
1.2
1.2
40
V
SD
GS
S
= 0 V, I = 12 A (Note 4)
GS
S
t
Reverse Recovery Time
I = 12 A, di/dt = 100 A/ms
F
ns
rr
Q
Reverse Recovery Charge
9
18
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
www.onsemi.com
3
FDMC7696
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
50
40
30
20
10
0
6
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
= 10 V
GS
V
GS
= 3.5 V
V
= 4 V
GS
5
4
3
2
1
0
V
= 6 V
GS
V
= 4.5 V
GS
V
GS
= 4.0 V
V
= 4.5 V
= 10 V
GS
V
GS
= 3.5 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
V
GS
= 6 V
GS
0.0
0.5
1.0
1.5
2.0
2.5
0
10
20
30
40
50
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 1. On Region Characteristics
Figure 2. Normalized On−Resistance
vs. Drain Current and Gate Voltage
1.6
1.4
1.2
1.0
0.8
0.6
40
35
30
25
20
15
10
5
I
V
= 12 A
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
D
= 10 V
GS
I
= 12 A
D
T = 125°C
J
T = 25°C
J
0
−75 −50 −25
0
25
50
75 100 125 150
2
4
6
8
10
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On−Resistance
Figure 4. On−Resistance vs. Gate to Source
vs. Junction Temperature
Voltage
50
40
30
20
10
0
100
10
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
= 0 V
GS
V
DS
= 5 V
T = 150°C
J
1
0.1
T = 25°C
J
T = 150°C
J
T = 25°C
J
T = −55°C
J
0.01
0.001
T = −55°C
J
0.0
0.2
V , BODY DIODE FORWARD VOLTAGE (V)
SD
0.4
0.6
0.8
1.0
1.2
1
2
3
4
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs. Source Current
www.onsemi.com
4
FDMC7696
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
10
8
3000
1000
I
D
= 12 A
C
iss
V
DD
= 10 V
V
DD
= 15 V
6
C
oss
V
DD
= 20 V
4
100
2
f = 1 MHz
= 0 V
C
rss
V
GS
0
10
0
4
8
12
16
0.1
1
10
30
Q , GATE CHARGE (nC)
g
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain
to Source Voltage
40
10
40
30
20
10
0
V
= 10 V
GS
T = 25°C
J
V
= 4.5 V
GS
T = 100°C
T = 125°C
J
J
Limited by Package
R
= 5.0°C/W
q
JC
1
25
50
75
100
125
150
0.001
0.01
0.1
1
10
100
t , TIME IN AVALANCHE (ms)
AV
T , CASE TEMPERATURE (°C)
C
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
100
10
1000
100
10
100 ms
1 ms
1
THIS AREA IS
10 ms
100 ms
1 s
10 s
DC
LIMITED BY r
DS(on)
SINGLE PULSE
0.1
0.01
T = MAX RATED
SINGLE PULSE
J
R
q
JA
= 125°C/W
R
= 125°C/W
q
JA
1
0.5
T = 25°C
A
T = 25°C
A
0.01
0.1
1
10
100 200
10 −4 10 −3 10 −2 10 −1
1
10
100 1000
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
t, PULSE WIDTH (s)
Figure 11. Forward Bias Safe
Operating Area
Figure 12. Single Pulse Maximum
Power Dissipation
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5
FDMC7696
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
P
DM
0.1
0.1
0.01
t
1
0.05
0.02
0.01
t
2
NOTES:
DUTY FACTOR: D = t / t
1
2
SINGLE PULSE
= 125°C/W
PEAK T = P
x Z (t) x R
+ T
JA A
q
q
J
DM
JA
R
q
JA
0.001
10−4
10−3
10−2
10−1
t, RECTANGULAR PULSE DURATION (s)
1
10
100
1000
Figure 13. Junction−to−Ambient Transient Thermal Response Curve
PACKAGE MARKING AND ORDERING INFORMATION
†
Device
FDMC7696
Device Marking
Package Type
Reel Size
Tape Width
Shipping
FDMC7696
WDFN8 3.3x3.3, 0.65P
13”
12 mm
3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
www.onsemi.com
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511DR
ISSUE B
DATE 02 FEB 2022
GENERIC
MARKING DIAGRAM*
XXXX = Specific Device Code
*This information is generic. Please refer to
A
Y
= Assembly Location
= Year
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
XXXX
AYWWG
G
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13650G
WDFN8 3.3x3.3, 0.65P
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
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