FDMC8030 [ONSEMI]
双 N 沟道，Power Trench® MOSFET，40V，12A，10mΩ;
| 型号： | FDMC8030 |
| 厂家： | 
ONSEMI |
| 描述： | 双 N 沟道，Power Trench® MOSFET，40V，12A，10mΩ |
| 文件： | 总8页 (文件大小：265K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – Dual N-Channel,
POWERTRENCH)
Bottom Drain2 Contact
G2
S2
G1
S1
S1
S1
8
7
1
2
40 V, 12 A, 10 mW
Q2
Q1
FDMC8030
S2
S2
6
5
3
4
General Description
Bottom Drain1 Contact
This device includes two 40 V N−Channel MOSFETs in a dual
Power 33 (3 mm x 3 mm MLP) package. The package is enhanced for
exceptional thermal performance.
Features
Pin 1
G1 S1 S1 S1
• Max r
• Max r
• Max r
= 10 mW at V = 10 V, I = 12 A
GS D
DS(on)
DS(on)
DS(on)
= 14 mW at V = 4.5 V, I = 10 A
GS
D
D1
D2
= 28 mW at V = 3.2 V, I = 4 A
GS
D
• This Device is Pb−Free and is RoHS Compliant
Applications
• Battery Protection
• Load Switching
• Point of Load
G2 S2 S2 S2
Power 33
WDFN8 3x3, 0.65P
CASE 511DG
MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
VDS
Parameter
Drain to Source Voltage
Ratings Units
MARKING DIAGRAM
40
12
V
V
A
VGS
Gate to Source Voltage
(Note 4)
$Y&Z&2&K
FDMC
ID
Drain Current
8030
− Continuous
− Pulsed
TA = 25°C
(Note 1a)
12
50
EAS
PD
Single Pulse Avalanche Energy
Power Dissipation TC = 25°C
Power Dissipation TA = 25°C
(Note 3)
21
14
mJ
W
$Y
= onsemi Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
&Z
&2
&K
(Note 1a)
1.9
FDMC8030
= Specific Device Code
TJ, TSTG Operating and Storage Junction Temperature
Range
−55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
March, 2023 − Rev. 2
FDMC8030/D
FDMC8030
THERMAL CHARACTERISTICS
Symbol
Parameter
Rating
9.0
Units
°C/W
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (Note 1a)
Thermal Resistance, Junction to Ambient (Note 1b)
65
155
PACKAGE MARKING AND ORDERING INFORMATION
†
Device
Device Marking
Package
Shipping
FDMC8030
FDMC8030
WDFN8 3x3, 0.65P, Power 33
3000 units / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
I
D
= 250 μA, V = 0 V
BV
Drain to Source Breakdown Voltage
40
V
GS
DSS
DBV
DSS
DT
Breakdown Voltage Temperature Coefficient
I
D
= 250 μA, referenced to 25°C
19
mV/°C
J
μA
I
Zero Gate Voltage Drain Current
V
V
= 32 V, V = 0 V
1
DSS
DS
GS
I
Gate to Source Leakage Current, Forward
= 12 V, V = 0 V
100
nA
GSS
GS
DS
ON CHARACTERISTICS
Gate to Source Threshold Voltage
V
GS
= V , I = 250 μA
V
1.0
1.5
2.8
V
DS
D
GS(th)
DV
GS(th)
DT
Gate to Source Threshold Voltage
Temperature Coefficient
I
D
= 250 μA, referenced to 25°C
−5
mV/°C
J
r
Static Drain to Source On Resistance
mW
V
V
V
V
V
= 10 V, I = 12 A
8
10
14
28
16
DS(on)
GS
D
= 4.5 V, I = 10 A
10
19
13
57
GS
GS
GS
DD
D
= 3.2 V, I = 4 A
D
= 10 V, I = 12 A, T = 125°C
D
J
g
FS
Forward Transconductance
= 5 V, I = 12 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 20 V, V = 0 V
1462
321
20
1975
430
30
pF
pF
pF
W
iss
DS
GS
f = 1 MHz
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
rss
R
0.9
2.5
g
SWITCHING CHARACTERISTICS
V
V
= 20 V, I = 12 A
D
t
Turn−On Delay Time
Rise Time
7
3
13
10
33
10
30
17
ns
ns
DD
GS
d(on)
= 10 V, R
= 6 W
GEN
t
r
t
Turn−Off Delay Time
Fall Time
19
3
ns
d(off)
t
f
ns
Q
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V
V
V
= 0 V to 10 V, V = 20 V, I = 12 A
21
12
2.8
2.5
nC
nC
nC
nC
g(TOT)
GS
DD
D
= 0 V to 5 V, V = 20 V, I = 12 A
GS
DD
D
= 20 V
= 12 A
Q
DD
D
gs
I
Q
gd
www.onsemi.com
2
FDMC8030
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
Parameter
DRAIN−SOURCE DIODE CHARACTERISTICS
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
V
Source to Drain Diode Forward Voltage
Reverse Recovery Time
V
= 0 V, I = 12 A
(Note 2)
0.83
25
9
1.2
40
18
V
SD
GS
S
t
I = 12 A, di/dt = 100 A/μs
F
ns
nC
rr
Q
Reverse Recovery Charge
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed
JC
θ
θ
JA
by design while R
is determined by the user’s board design.
θ
CA
a. 65°C/W when mounted on
a 1 in pad of 2 oz copper
b. 155°C/W when mounted on
a minimum pad of 2 oz copper
2
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. E of 21 mJ is based on starting T = 25°C, L = 0.3 mH, I = 12 A, V = 36 V, V = 10 V. 100% tested at L = 3 mH, I = 5 A.
AS
J
GS
AS
DD
GS
AS
4. As an N−ch device, the negative V rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
www.onsemi.com
3
FDMC8030
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
50
5
4
VGS = 10 V
VGS = 4.5 V
GS = 3.5 V
VGS = 3 V
40
30
V
V
GS = 3.2 V
VGS =3.2 V
3
2
1
VGS = 3.5 V
VGS = 3 V
20
10
0
VGS = 10 V
VGS = 4.5 V
PULSE DURATION = 80ms
DUTY CYCLE = 0.5%MAX
PULSE DURATION = 80ms
DUTY CYCLE = 0.5%MAX
0
0
1
2
3
4
5
0
10
20
30
40
50
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance
vs Drain Current and Gate Voltage
1.6
1.4
1.2
1.0
0.8
0.6
30
25
20
15
10
5
PULSE DURATION = 80ms
DUTY CYCLE = 0.5%MAX
ID = 12 A
VGS = 10 V
ID = 12 A
TJ = 125 oC
TJ = 25 o
C
0
−75 −50 −25
0
25 50 75 100 125 150
2
4
6
8
10
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On−Resistance
Figure 4. On−Resistance vs Gate to
vs Junction Temperature
Source Voltage
50
40
30
20
10
0
50
10
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5%MAX
VGS = 0 V
VDS = 5 V
1
0.1
TJ = 150 o
C
TJ = 150 o
C
T
J = 25 oC
TJ = 25 o
C
TJ = −55 o
C
0.01
TJ = −55oC
0.001
1
2
3
4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
www.onsemi.com
4
FDMC8030
TYPICAL CHARACTERISTICS (continued)
(T = 25°C unless otherwise noted)
J
10
8
2000
1000
ID = 12 A
VDD = 15 V
Ciss
VDD = 20 V
Coss
100
10
1
6
VDD = 25 V
4
Crss
2
f = 1 MHz
= 0 V
V
GS
0
0
5
10
15
20
0.1
1
10
, DRAIN TO SOURCE VOLTAGE (V)
DS
40
Q , GATE CHARGE (nC)
V
g
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain
to Source Voltage
30
10
60
10
100 ms
TJ = 25 o
C
1 ms
1
0.1
TJ = 100 o
C
10 ms
THIS AREA IS
LIMITED BY r
DS(on)
100 ms
1 s
SINGLE PULSE
TJ = MAX RATED
TJ = 125 oC
R
qJA = 155oC/W
10 s
DC
T
A = 25oC
1
0.01
0.01
0.1
1
10
100 200
0.001
0.01
0.1
1
10 20
t
AV
, TIME IN AVALANCHE (ms)
V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Forward Bias Safe
Operating Area
1000
SINGLE PULSE
R
qJA = 155 oC/W
A = 25 o
100
10
1
T
C
0.1
10−4
10−3
10−2
10−1
t, PULSE WIDTH (sec)
1
10
100
1000
Figure 11. Single Pulse Maximum Power Dissipation
www.onsemi.com
5
FDMC8030
TYPICAL CHARACTERISTICS (continued)
(T = 25°C unless otherwise noted)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.01
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
1
2
R
qJA = 155 oC/W
PEAK T = P
J
x Z
x R
+ T
DM
qJA
qJA A
0.001
10−4
10−3
10−2
t, RECTANGULAR PULSE DURATION (s)
10−1
1
10
100
1000
Figure 12. Transient Thermal Response Curve
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
www.onsemi.com
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3x3, 0.65P
CASE 511DG
ISSUE A
DATE 12 FEB 2019
GENERIC
MARKING DIAGRAM*
XXXX
AYWWG
G
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13623G
WDFN8 3x3, 0.65P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
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