FDMC8200S [ONSEMI]

双 N 沟道，PowerTrench® MOSFET，30V，10mΩ，20mΩ;


型号：	FDMC8200S
厂家：	ONSEMI
描述：	双 N 沟道，PowerTrench® MOSFET，30V，10mΩ，20mΩ
文件：	总12页 (文件大小：330K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DATA SHEET

www.onsemi.com

MOSFET – Dual, N-Channel,

POWERTRENCH⁾

Pin 1

D2/S1

30 V, 10 mW, 20 mW

FDMC8200S

Top

General Description

This device includes two specialized N−Channel MOSFETs in a

dual Power33 (3 mm x 3 mm MLP) package. The switch node has

been internally connected to enable easy placement and routing of

synchronous buck converters. The control MOSFET (Q1) and

synchronous MOSFET (Q2) have been designed to provide optimal

power efficiency.

SWITCH

NODE

GND

Features

• Q1: N−Channel

Bottom

♦ Max r

) = 20 mW at V = 10 V, I = 6 A

GS D

DS(on

WDFN8 3x3, 0.65P

(Power 33)

= 32 mW at V = 4.5 V, I = 5 A

DS(on)

CASE 511DE

• Q2: N−Channel

♦ Max r

= 10 mW at V = 10 V, I = 8.5 A

GS D

DS(on)

= 13.5 mW at V = 4.5 V, I = 7.2 A

DS(on)

• This Device is Pb−Free, Halide Free and is RoHS Compliant

MARKING DIAGRAM

Applications

$Y&Z&2&K

FDMC

8200S

• Mobile Computing

• Mobile Internet Devices

• General Purpose Point of Load

= Logo

= Assembly Plant Code

= 2−Digit Date Code

= 2−Digits Lot Run Traceability Code

FDMC8200S = Device Code

SCHEMATIC

ORDERING INFORMATION

See detailed ordering and shipping information on page 10 of

this data sheet.

Publication Order Number:

February, 2023 − Rev. 4

FDMC8200S/D

FDMC8200S

MOSFET MAXIMUM RATINGS (T = 25°C, unless otherwise noted)

Symbol

Parameter

Unit

Drain to Source Voltage

Gate to Source Voltage

(Note 4)

(Note 3)

Drain Current − Continuous (Package Limited) T = 25°C

− Continuous (Silicon Limited)

− Continuous

T = 25°C

6 (Note 1a) 8.5 (Note 1b)

− Pulsed

Single Pulse Avalanche Energy

Power Dissipation for Single Operation

T = 25°C

1.9 (Note 1a) 2.5 (Note 1b)

0.7 (Note 1c) 1.0 (Note 1d)

−55 to +150

T = 25°C

T , T

Operating and Storage Junction Temperature Range

°C

STG

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS (T = 25°C, unless otherwise noted)

Symbol

Parameter

Thermal Resistance, Junction to Ambient

Unit

65 (Note 1a) 50 (Note 1b)

180 (Note 1c) 125 (Note 1d)

°C/W

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

7.5

4.2

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Symbol

Parameter

Test Conditions

Type

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain to Source Breakdown Voltage

= 250 mA, V = 0 V

−

DSS

= 1 mA, V = 0 V

Breakdown Voltage Temperature

Coefficient

= 250 mA, referenced to 25°C

= 1 mA, referenced to 25°C

−

mV/°C

DBV_DSS

DT_J

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

= 24 V, V = 0 V

−

500

DSS

20 V, V = 0 V

−

100

GSS

ON CHARACTERISTICS

GS(th)

Gate to Source Threshold Voltage

= V , I = 250 mA

1.0

2.3

2.0

3.0

DS D

= V , I = 1 mA

Gate to Source Threshold Voltage

Temperature Coefficient

= 250 mA, referenced to 25°C

= 1 mA, referenced to 25°C

−

−5

−6

−

mV/°C

DV_GS(th)

DT_J

Static Drain to Source On Resistance

= 10 V, I = 6 A

−

DS(on)

= 4.5 V, I = 5 A

= 10 V, I = 6 A, T = 125°C

= 10 V, I = 8.5 A

−

7.8

10.3

11.4

10.0

13.5

13.1

= 4.5 V, I = 7.2 A

= 10 V, I = 8.5 A, T = 125°C

Forward Transconductance

= 5 V, I = 6 A

−

= 5 V, I = 8.5 A

DYNAMIC CHARACTERISTICS

Input Capacitance

= 15 V, V = 0 V, f = 1 MHZ

−

495

1080

660

1436

iss

oss

Output Capacitance

−

145

373

195

495

rss

Reverse Transfer Capacitance

−

www.onsemi.com

FDMC8200S

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)

Symbol

DYNAMIC CHARACTERISTICS

Gate Resistance

Parameter

Test Conditions

Type

Min

Typ

Max

Unit

f = 1 MHz

0.2

1.4

1.2

4.2

3.6

SWITCHING CHARACTERISTICS

Turn−On Delay Time

−

7.6

d(on)

= 15 V, I = 1 A, V = 10 V,

= 6 W

GEN

Rise Time

−

3.1

1.8

= 15 V, I = 1 A, V = 10 V,

D GS

= 6 W

Turn−Off Delay Time

Fall Time

−

GEN

d(off)

−

1.3

8.5

Total Gate Charge

= 0 V to 10 V

−

7.3

15.7

g(TOT)

= 15 V, I = 6 A

= 15 V, I = 8.5 A

Total Gate Charge

= 0 V to 4.5 V

−

3.1

7.2

4.3

g(TOT)

= 15 V, I = 6 A

= 15 V, I = 8.5 A

Gate to Source Charge

−

1.8

−

= 15 V, I = 6 A

Gate to Drain “Miller” Charge

−

1.9

−

= 15 V, I = 8.5 A

DRAIN−SOURCE CHARACTERISTICS

Source−Drain Diode Forward

Voltage

= 0 V, I = 6 A (Note 2)

−

0.8

0.6

1.2

0.8

= 0 V, I = 8.5 A (Note 2)

= 0 V, I = 1.3 A (Note 2)

Reverse Recovery Time

−

I = 6 A, di/dt = 100 A/mS

Reverse Recovery Charge

−

2.3

I = 8.5 A, di/dt = 300 A/mS

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. R

is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R

is guaranteed

by design while R

is determined by the user’s board design.

a. 65°C/W when mounted on

b. 50°C/W when mounted on

a 1 in pad of 2 oz copper

c. 180°C/W when mounted on

a minimum pad of 2 oz copper

d. 125°C/W when mounted on

a minimum pad of 2 oz copper

2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.

3. Starting Q1: T = 25°C, L = 1 mH, I = 5 A, Vgs = 10 V, Vdd = 27 V, 100% test at L = 3 mH, I = 4 A; Q2: T = 25°C, L = 1 mH, I = 8 A, Vgs = 10 V,

Vdd = 27 V, 100% test at L = 3 mH, I = 3.2 A.

4. As an N−ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.

www.onsemi.com

FDMC8200S

TYPICAL CHARACTERISTICS (Q1 N−CHANNEL) (T = 25°C, unless otherwise noted)

= 10 V

= 6 V

PULSE DURATION = 80 ms

DUTY CYCLE = 0.5% MAX

= 4.5 V

= 3.5 V

= 4 V

= 4.5 V

= 10 V

= 6 V

PULSE DURATION = 80 ms

DUTY CYCLE = 0.5% MAX

= 3.5 V

1.0

0.0

0.5

1.5

2.0

2.5

3.0

, DRAIN TO SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

Figure 1. On Region Characteristics

Figure 2. Normalized On−Resistance vs.

Drain Current and Gate Voltage

100

1.6

1.4

1.2

= 6 A

PULSE DURATION = 80 ms

DUTY CYCLE = 0.5% MAX

= 10 V

= 6 A

T = 125°C

1.0

0.8

T = 25°C

−75 −50 −25

75 100 125 150

T , JUNCTION TEMPERATURE (°C)

, GATE TO SOURCE VOLTAGE (V)

Figure 3. Normalized On Resistance vs.

Junction Temperature

Figure 4. On−Resistance vs. Gate to Source Voltage

PULSE DURATION = 80 ms

DUTY CYCLE = 0.5% MAX

= 0 V

= 5 V

T = 150°C

0.1

T = 25°C

0.01

0.001

T = −55°C

2.0

2.5

3.0

3.5

4.0

4.5

0.2

0.4

0.6

0.8

1.0

1.2

, GATE TO SOURCE VOLTAGE (V)

, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure 6. Source to Drain Diode Forward Voltage vs.

Source Current

www.onsemi.com

FDMC8200S

TYPICAL CHARACTERISTICS (Q1 N−CHANNEL) (T = 25°C, unless otherwise noted) (continued)

1000

= 6 A

iss

= 20 V

= 15 V

oss

= 10 V

100

rss

f = 1 MHz

= 0 V

0.1

Q , GATE CHARGE (nC)

, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics

Figure 8. Capacitance vs. Drain to Source Voltage

= 7.5°C/W

= 10 V

T = 25°C

Limited by Package

T = 100°C

= 4.5 V

T = 125°C

0.01

0.1

100

125

150

t , TIME IN AVALANCHE (ms)

T , CASE TEMPERATURE (°C)

Figure 9. Unclamped Inductive Switching Capability

Figure 10. Maximum Continuous Drain Current vs.

Case Temperature

100

= 10 V

100 ms

1 ms

10 ms

THIS AREA IS

100 ms

1 s

10 s

LIMITED BY r

DS(on)

0.1

0.01

SINGLE PULSE

T = MAX RATED

SINGLE PULSE

= 125°C/W

= 180°C/W

= 25°C

T = 25°C

0.1

0.001

0.01

0.1

100 200

0.001

0.01

0.1

100

1000

, DRAIN TO SOURCE VOLTAGE (V)

t, PULSE WIDTH (s)

Figure 11. Forward Bias Safe Operating Area

Figure 12. Single Pulse Maximum Power Dissipation

www.onsemi.com

FDMC8200S

TYPICAL CHARACTERISTICS (Q1 N−CHANNEL) (T = 25°C, unless otherwise noted) (continued)

DUTY CYCLE−DESCENDING ORDER

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

= 180°C/W

0.003

10⁻⁴

10⁻³

10⁻²

10⁻¹

t, RECTANGULAR PULSE DURATION (s)

100

1000

Figure 13. Junction−to−Ambient Transient Thermal Response Curve

www.onsemi.com

FDMC8200S

TYPICAL CHARACTERISTICS (Q2 N−CHANNEL) (T = 25°C, unless otherwise noted)

= 10 V

= 4.5 V

= 4 V

PULSE DURATION = 80 ms

DUTY CYCLE = 0.5% MAX

= 3 V

= 3.5 V

= 3 V

= 3.5 V

= 4 V

PULSE DURATION = 80 ms

DUTY CYCLE = 0.5% MAX

= 10 V

= 4.5 V

0.0

0.5

1.0

1.5

, DRAIN TO SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

Figure 14. On−Region Characteristics

Figure 15. Normalized On−Resistance vs.

Drain Current and Gate Voltage

1.6

1.4

1.2

1.0

0.8

100

= 8.5 A

= 10 V

PULSE DURATION = 80 ms

DUTY CYCLE = 0.5% MAX

= 8.5 A

T = 25°C T = 125°C

−75 −50 −25

75 100 125 150

T , JUNCTION TEMPERATURE (°C)

, GATE TO SOURCE VOLTAGE (V)

Figure 16. Normalized On−Resistance vs.

Junction Temperature

Figure 17. On−Resistance vs. Gate to Source Voltage

PULSE DURATION = 80 ms

= 0 V

DUTY CYCLE = 0.5% MAX

T = 150°C

= 5 V

T = 150°C

T = 25°C

0.1

T = 25°C

T = −55°C

0.01

0.001

T = −55°C

1.5

2.0

2.5

3.0

3.5

4.0

0.0

0.2

V , BODY DIODE FORWARD VOLTAGE (V)

0.4

0.6

0.8

1.0

1.2

, GATE TO SOURCE VOLTAGE (V)

Figure 18. Transfer Characteristics

Figure 19. Source to Drain Diode Forward Voltage vs.

Source Current

www.onsemi.com

FDMC8200S

TYPICAL CHARACTERISTICS (Q2 N−CHANNEL) (T = 25°C, unless otherwise noted) (continued)

3000

= 8.5 A

1000

100

iss

= 15 V

oss

= 10 V

= 20 V

f = 1 MHz

= 0 V

rss

0.1

, DRAIN TO SOURCE VOLTAGE (V)

Q , GATE CHARGE (nC)

Figure 20. Gate Charge Characteristics

Figure 21. Capacitance vs. Drain to Source Voltage

= 10 V

T = 25°C

= 4.5 V

T = 100°C

Limited by Package

T = 125°C

= 50°C/W

0.01

100

125

150

0.1

t , TIME IN AVALANCHE (ms)

T , CASE TEMPERATURE (°C)

Figure 22. Unclamped Inductive Switching

Capability

Figure 23. Maximum Continuous Drain Current vs.

Case Temperature

100

= 10 V

100 ms

1 ms

THIS AREA IS

LIMITED BY r

10 ms

DS(on)

100 ms

SINGLE PULSE

T = MAX RATED

1 s

10 s

0.1

SINGLE PULSE

= 125°C/W

T = 25°C

0.1

0.01

0.1

100200

0.001

0.01

0.1

100

1000

, DRAIN TO SOURCE VOLTAGE (V)

t, PULSE WIDTH (s)

Figure 24. Forward Bias Safe Operating Area

Figure 25. Single Pulse Maximum Power Dissipation

www.onsemi.com

FDMC8200S

TYPICAL CHARACTERISTICS (Q2 N−CHANNEL) (T = 25°C, unless otherwise noted) (continued)

DUTY CYCLE−DESCENDING ORDER

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

= 125°C/W

NOTES:

DUTY FACTOR: D = t / t

(Note 1b)

PEAK T = P

x Z

x R

+ T

JA A

0.001

10⁻⁴

10⁻³

10⁻²

10⁻¹

100

1000

t, RECTANGULAR PULSE DURATION (s)

Figure 26. Junction−to−Ambient Transient Thermal Response Curve

www.onsemi.com

FDMC8200S

TYPICAL CHARACTERISTICS (continued)

SyncFET Schottky Body Diode Characteristics

onsemi’s SyncFETt process embeds a Schottky diode in

parallel with POWERTRENCH MOSFET. This diode

exhibits similar characteristics to a discrete external

Schottky diode in parallel with a MOSFET. Figure 14 shows

the reverses recovery characteristic of the FDMC8200S.

Schottky barrier diodes exhibit significant leakage at high

temperature and high reverse voltage. This will increase the

power in the device.

0.01

T = 125°C

0.001

di/dt = 300 A/ms

T = 100°C

0.0001

0.00001

−1

−2

T = 25°C

0.000001

100

TIME (ns)

, REVERSE VOLTAGE (V)

Figure 27. FDMC8200S SyncFET Body Diode

Reverse Recovery Characteristic

Figure 28. SyncFET Body Diode Reverses Leakage

Versus Drain−Source Voltage

PACKAGE MARKING AND ORDERING INFORMATION

†

Device

Device Marking

Package

Reel Size

Tape Width

Shipping

FDMC8200S

WDFN8 3x3, 0.65P

(Power 33)

13”

12 mm

3000 / Tape & Reel

(Pb−Free, Halide Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States

and/or other countries.

SyncFET is trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other

countries.

www.onsemi.com

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

WDFN8 3x3, 0.65P

CASE 511DE

ISSUE O

DATE 31 AUG 2016

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON13621G

WDFN8 3X3, 0.65P

PAGE 1 OF 1

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically

disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the

rights of others.

www.onsemi.com

onsemi,

, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates

and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.

A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any

products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the

information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use

of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products

and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information

provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may

vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license

under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems

or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should

Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

ADDITIONAL INFORMATION

TECHNICAL PUBLICATIONS:

Technical Library: www.onsemi.com/design/resources/technical−documentation

onsemi Website: www.onsemi.com

ONLINE SUPPORT: www.onsemi.com/support

For additional information, please contact your local Sales Representative at

www.onsemi.com/support/sales



FDMC8200S [ONSEMI]

相关型号：

SI9130DB

SI9135LG-T1

SI9135LG-T1-E3

SI9135_11

SI9136_11

SI9130CG-T1-E3

SI9130LG-T1-E3

SI9130_11

SI9137

SI9137DB

SI9137LG

SI9122E