FDMC86259P [ONSEMI]
P 沟道，PowerTrench® MOSFET，-150V，-13A，107mΩ;
| 型号： | FDMC86259P |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道，PowerTrench® MOSFET，-150V，-13A，107mΩ 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：532K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – P-Channel,
POWERTRENCH)
-150 V, -13 A, 107 mW
V
r
MAX
I MAX
D
DS
DS(on)
−150 V
107 mW @ −10 V
137 mW @ −6 V
−13 A
FDMC86259P
Pin 1
Pin 1
S
S
S
General Description
G
This P−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to
minimize the on−state resistance and yet maintain superior switching
performance.
D
D
D
D
Bottom
Top
Features
PQFN8 3.3x3.3, 0.65P
CASE 483AW
Power 33
• Max r
• Max r
= 107 mW at V = −10 V, I = −3 A
GS D
DS(on)
DS(on)
= 137 mW at V = −6 V, I = −2,7 A
GS
D
• Very Low RDS−on Mid Voltage P Channel Silicon Technology
Optimized for Low Qg
MARKING DIAGRAM
• This Product is Optimised for Fast Switching Applications as well as
Load Witch Applications
$Y&Z&3&K
FDMC
86259P
• 100% UIL Tested
• This Device is Pb−Free, Halide Free and RoHS Compliant
Applications
• Active Clamp Switch
• Load Switch
$Y
&Z
&3
&K
= Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot Code
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
FDMC86259P
= Specific Device Code
Symbol
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous
Rating
−150
25
Unit
V
V
DS
V
GS
PIN ASSIGNMENT
V
I
D
T
C
= 25°C
−13
A
S
S
1
2
8
7
D
D
Continuous T = 25°C
−3.2
A
(Note 1a)
Pulsed
−20
181
E
AS
Single Pulse Avalanche Energy (Note 3)
mJ
W
S
3
4
6
5
D
D
P
D
Power Dissipation
T
C
= 25°C
62
G
Power Dissipation (Note 1a) T = 25°C
2.3
A
T , T
Operating and Storage Junction
Temperature Range
−55 to + 150
°C
J
STG
P−Channel MOSFET
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
THERMAL CHARACTERISTICS
Symbol
RqJC
Parameter
Rating
2.0
Unit
Thermal Resistance, Junction to Case
°C/W
RqJA
Thermal Resistance,
Junction to Ambient (Note 1a)
53
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
January, 2023 − Rev. 4
FDMC86259P/D
FDMC86259P
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= −250 mA, V = 0 V
−150
−
−
−
V
DSS
D
GS
Breakdown Voltage Temperature
Coefficient
= −250 mA, referenced to 25°C
−
−88
mV/°C
DBVDSS
DTJ
D
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= −120 V, V = 0 V
−
−
−
−
−1
mA
DSS
GSS
DS
GS
I
=
25 V, V = 0 V
100
nA
GS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = −250 mA
−2
−2.8
−4
V
GS(th)
GS
DS
D
Gate to Source Threshold Voltage
Temperature Coefficient
= −250 mA, referenced to 25°C
−
6
−
mV/°C
DVGS(th)
DTJ
D
r
Static Drain to Source On Resistance
Forward Transconductance
V
GS
V
GS
V
GS
V
DS
= −10 V, I = −3 A
−
−
−
−
87
99
107
137
178
−
mW
DS(on)
D
= −6 V, I = −2.7 A
D
= −10 V, I = −3 A, T = 125°C
145
12
D
J
g
FS
= −10 V, I = −3 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= −75 V, V = 0 V, f = 1 MHz
−
−
1535
125
6
2045
170
10
pF
pF
pF
W
iss
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
−
rss
R
0.1
1.4
3
g
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Rise Time
V
= −75 V, I = −3 A, V = −10 V,
GEN
−
−
−
−
−
−
−
−
12
3.3
22
23
10
36
20
32
20
−
ns
ns
ns
ns
nC
d(on)
DD
D
GS
R
= 6 W
t
r
t
Turn−Off Delay Time
Fall Time
d(off)
t
f
9.6
22
Q
Total Gate Charge
V
GS
V
GS
V
DD
= 0 V to −10 V, V = −75 V, I = −3 A
DD D
g(TOT)
= 0 V to −6 V, V = −75 V, I = −3 A
14
DD
D
Q
Q
Total Gate Charge
= −75 V, I = −3 A
5.7
4.3
nC
nC
gs
D
Gate to Drain “Miller” Charge
−
gd
DRAIN−SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward
Voltage
V
V
= 0 V, I = −3 A (Note 2)
−
−
−
−
−0.80
−0.78
77
−1.3
−1.2
123
333
V
SD
GS
S
= 0 V, I = −1.9 A (Note 2)
GS
S
t
Reverse Recovery Time
I = −3 A, di/dt = 100 A/ms
F
ns
rr
Q
Reverse Recovery Charge
208
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed
JC
q
q
JA
by design while R
is determined by the user’s board design.
q
CA
a. 53°C/W when mounted on
b. 125°C/W when mounted on
a minimum pad of 2 oz copper
2
a 1 in pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. Starting T = 25°C; P−ch: L = 3 mH, I = −11 A, V = −150 V, V = −10 V. 100% test at L = 0.1 mH, I = −34 A.
J
AS
DD
GS
AS
www.onsemi.com
2
FDMC86259P
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
20
4
V
GS
V
GS
= −10 V
= −6 V
V
GS
= −4 V
V
= −4.5 V
GS
3
2
1
0
15
10
V
GS
= −4.5 V
V
= −5 V
GS
V
GS
= −5 V
V
= −4 V
GS
5
0
V
GS
= −10 V
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
V
GS
= −6 V
10
−I , Drain Current (A)
0
5
15
20
10
1.2
1
2
3
4
5
0
−V , Drain to Source Voltage (V)
D
DS
Figure 1. On Region Characteristics
Figure 2. Normalized On−Resistance
vs. Drain Current and Gate Voltage
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
300
250
200
150
100
50
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
I
V
= −3 A
= −10 V
D
GS
I
D
= −3 A
T = 125°C
J
T = 25°C
J
−75 −50 −25
0
25
50
75 100 125 150
3
4
5
6
7
8
9
−V , Gate to Source Voltage (V)
T , Junction Temperature (5C)
J
GS
Figure 3. Normalized On Resistance
vs. Junction Temperature
Figure 4. On−Resistance vs. Gate to Source
Voltage
30
10
20
15
V
GS
= 0 V
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
T = 150°C
J
V
= −5 V
1
0.1
DS
10
5
T = 25°C
J
T = 150°C
J
T = 25°C
J
T = −55°C
J
0.01
T = −55°C
J
0
0.001
4
0.0
0.2
0.4
0.6
0.8
1.0
2
3
5
6
−V , Gate to Source Voltage (V)
GS
−V , Body Diode Forward Voltage (V)
SD
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs. Source Current
www.onsemi.com
3
FDMC86259P
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
10
8
10000
I
D
= −3 A
V
= −50 V
C
DD
iss
1000
100
10
V
DD
= −75 V
C
C
oss
rss
6
V
DD
= −100 V
4
2
0
f = 1 MHz
= 0 V
V
GS
1
0
10
0.1
1
10
100
5
15
20
25
−V , Drain to Source Voltage (V)
DS
Q , Gate Charge (nC)
g
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain to Source Voltage
20
16
12
100
10
R
= 2.0°C/W
q
JC
T = 25°C
J
V
= −10 V
T = 100°C
J
GS
8
4
0
Limited by Package
V
= −6 V
GS
T = 125°C
J
1
0.001
0.01
1
10
100
25
50
75
100
125
150
0.1
t , Time in Avalanche (ms)
AV
T , Case Temperature (5C)
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain Current
vs Case Temperature
100
10
20000
10000
10 ms
Single pulse
R
= 2.0°C/W
q
JC
T
C
= 25°C
100 ms
1000
100
10
1
This Area is
Limited by r
DS(on)
1 ms
Single Pulse
T = Max Rated
0.1
0.01
10 ms
DC
J
R
T
= 2.0°C/W
Curve Bent to
Measured Data
q
JC
= 25°C
C
−5
−4
−3
−2
−1
0.1
1
10
100
500
10
10
10
10
10
1
t, Pulse Width (s)
−V , Drain to Source Voltage (V)
DS
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum
Power Dissipation
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4
FDMC86259P
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
2
1
Duty Cycle − Descending Order
D = 0.5
P
DM
0.2
0.1
t
1
0.1
t
2
0.05
0.02
0.01
Notes:
(t) = r(t) × R
Z
q
q
JC
JC
R
= 2.0°C/W
q
JC
Single pulse
Peak T = P
× Z (t) + T
q
JC C
J
DM
0.01
Duty Cycle, D = t /t
1
2
0.005
−5
−4
−3
−2
−1
10
10
10
10
10
1
t, Rectangular Pulse Duration (s)
Figure 13. Junction−to−Case Transient Thermal Response Curve
ORDERING INFORMATION
†
Device
Device Marking
FDMC86259P
Package Type
Reel Size
Tape Width
Shipping
FDMC86259P
PQFN8 3.3x3.3, 0.65P
Power 33
(Pb−Free, Halide Free)
13”
12 mm
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, .BRD8011/D.
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other
countries.
www.onsemi.com
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3X3.3, 0.65P
CASE 483AW
ISSUE A
DATE 10 SEP 2019
GENERIC
MARKING DIAGRAM*
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
XXXX
AYWW
WW = Work Week
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13672G
WDFN8 3.3X3.3, 0.65P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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