FDME510PZT [ONSEMI]
P 沟道，PowerTrench® MOSFET，-20V，-6A，37mΩ;
| 型号： | FDME510PZT |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道，PowerTrench® MOSFET，-20V，-6A，37mΩ |
| 文件： | 总8页 (文件大小：267K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – P-Channel
POWERTRENCH)
V
I
D
MAX
R
MAX
DS(on)
DS
−20 V
−6 A
37 mW
-20 V, -6 A, 37 mW
ELECTRICAL CONNECTION
Bottom Drain Contact
FDME510PZT
D
D
G
1
2
3
D
D
S
6
5
4
General Description
This device is designed specifically for battery charging or load
switching in cellular handset and other ultraportable applications. It
features a MOSFET with low on−state resistance.
The MicroFETt 1.6x1.6 Thin package offers exceptional thermal
performance for its physical size and is well suited to switching and
linear mode applications.
P-Channel MOSFET
G
D
S
Features
D
Pin 1
• Max r
• Max r
• Max r
• Max r
= 37 mW at V = −4.5 V, I = −5 A
GS D
DS(on)
DS(on)
DS(on)
DS(on)
S
= 50 mW at V = −2.5 V, I = −4 A
GS
D
D
D
= 65 mW at V = −1.8 V, I = −3 A
GS
D
Top View
Bottom View
= 100 mW at V = −1.5 V, I = −2 A
GS
D
MicroFET
(UDFN6)
CASE 517DV
• Low Profile: 0.55 mm Maximum in the New Package MicroFET
1.6x1.6 Thin
• Free from Halogenated Compounds and Antimony Oxides
• HBM ESD Protection Level > 2400 V (Note 3)
• These Devices are Pb−Free and are RoHS Compliant
MARKING DIAGRAM
&Z&2&K
7T
MOSFET MAXIMUM RATINGS (T = 25°C, Unless otherwise specified)
A
Symbol
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Ratings
Unit
V
V
DS
V
GS
−20
&Z
&2
&K
7T
= Assembly Plant Code
= 2−Digit Date Code (YW)
= 2−Digit Lot Traceability Code
= Specific Device Code
8
V
I
D
A
Continuous (T = 25°C) (Note 1a)
−6
A
Pulsed
−15
P
D
Power Dissipation for Single Operation
W
2.1
0.7
(T = 25°C) (Note 1a)
A
ORDERING INFORMATION
(T = 25°C) (Note 1b)
A
See detailed ordering and shipping information on page 2 of
this data sheet.
T , T
Operating and Storage Junction
Temperature Range
−55 to +150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
Unit
R
Thermal Resistance, Junction to Ambient
(Note 1a)
60
_C/W
q
JA
R
Thermal Resistance, Junction to Ambient
(Note 1b)
175
_C/W
q
JA
© Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
April, 2023 − Rev. 2
FDME510PZT/D
FDME510PZT
PACKAGE MARKING AND ORDERING INFORMATION
†
Device Marking
Device
FDME510PZT
Package
Shipping
7T
MicroFET 1.6x1.6 Thin
(Pb−Free / Halide Free)
5,000 units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= −250 mA, V = 0 V
−20
−
−
−
V
DSS
D
GS
DBV
/DT
Breakdown Voltage Temperature
Coefficient
= −250 mA, referenced to 25°C
−
−13
mV/_C
DSS
J
D
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= −16 V, V = 0 V
−
−
−
−
−1
mA
mA
DSS
DS
GS
I
=
8 V, V = 0 V
10
GSS
GS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = −250 mA
−0.4
−0.5
−1.0
V
GS(th)
GS
DS
D
DV
/DT
Gate to Source Threshold Voltage
Temperature Coefficient
= −250 mA, referenced to 25°C
−
3
−
mV/_C
GS(th)
J
D
r
Drain to Source On Resistance
V
GS
V
GS
V
GS
V
GS
V
GS
= −4.5 V, I = −5 A
−
−
−
−
−
31
38
48
57
40
37
50
mW
DS(on)
D
= −2.5 V, I = −4 A
D
= −1.8 V, I = −3 A
65
D
= −1.5 V, I = −2 A
100
60
D
= −4.5 V, I = −5 A, T = 125°C
D
J
g
FS
Forward Transconductance
V
DS
= −5 V, I = −5 A
−
21
−
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= −10 V, V = 0 V,
−
−
−
1120
155
140
1490
210
pF
pF
pF
iss
DS
GS
f = 1 MHz
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
210
rss
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Rise Time
V
V
= −10 V, I = −5 A,
−
−
−
−
−
−
−
6.5
10
93
54
16
1.6
4
13
16
149
86
22
−
ns
ns
d(on)
DD
GS
D
= −4.5 V, R
= 6 W
GEN
t
r
t
Turn-Off Delay Time
Fall Time
ns
d(off)
t
f
ns
Q
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
DD
V
GS
= −10 V, I = −5 A
nC
nC
nC
g
D
= −4.5 V
Q
gs
gd
Q
−
DRAIN-SOURCE DIODE CHARACTERISTICS
V
SD
Source to Drain Diode Forward
Voltage
V
GS
= 0 V, I = −1.6 A (Note 2)
−
−0.6
−1.2
V
S
t
Reverse Recovery Time
I = −5 A, di/dt = 100 A/ms
F
−
−
38
16
61
29
ns
rr
Q
Reverse Recovery Charge
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
FDME510PZT
NOTES:
1. R
2
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. R
is determined
q
q
JC
JA
by the user’s board design.
a) 60°C/W when mounted on
b) 175°C/W when mounted on
2
a 1 in pad of 2 oz copper.
a minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied.
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3
FDME510PZT
TYPICAL CHARACTERISTICS (T = 25°C, unless otherwise noted)
J
3
15
−4.5 V
=
VGS
−3 V
=
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
VGS
−2.5 V
=
VGS
1.8 V
GS = −
V
VGS = −1.5 V
2
1
0
10
5
VGS = −1.8 V
V
GS = −1.5 V
VGS = −2.5 V
−4.5 V
=
VGS
−3 V
=
VGS
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
0
0
5
10
15
0
0.5
1.0
1.5
−V , DRAIN TO SOURCE VOLTAGE (V)
DS
−I , DRAIN CURRENT (A)
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs.
Drain Current and Gate Voltage
1.6
200
ID = −5 A
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
VGS = −4.5 V
1.4
1.2
1.0
0.8
0.6
150
ID = −5 A
100
TJ = 125 o
C
50
TJ = 25 o
C
0
−75 −50 −25
0
25 50 75 100 125 150
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
T , JUNCTION TEMPERATURE (°C)
J
−V , GATE TO SOURCE VOLTAGE (V)
GS
Figure 3. Normalized On Resistance
vs. Junction Temperature
Figure 4. On−Resistance vs. Gate to Source
Voltage
20
15
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
VGS = 0 V
10
VDS = −5 V
TJ = 150 oC
10
5
TJ = 150 oC
TJ = 25 o
C
1
TJ = 25 o
C
TJ = −55 oC
TJ = −55oC
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
0.5
1.0
1.5
2.0
−V , GATE TO SOURCE VOLTAGE (V)
GS
−V , BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs. Source Current
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4
FDME510PZT
TYPICAL CHARACTERISTICS (T = 25°C, unless otherwise noted) (continued)
J
4.5
3.0
1.5
0
5000
ID = −5 A
V
DD = −8 V
Ciss
1000
VDD = −10 V
Coss
VDD = −12 V
f = 1 MHz
100
50
V
GS = 0 V
Crss
0
4
8
12
16
0.1
1
10 20
Q , GATE CHARGE (nC)
g
−V , DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain
to Source Voltage
−1
−2
−3
20
10
10
10
10
100 us
VDS = 0 V
1 ms
−4
10
10
1
−5
10 ms
TJ = 125 oC
THIS AREA IS
LIMITED BY r
−6
10
10
DS(on)
100 ms
1 s
−7
SINGLE PULSE
0.1
0.01
TJ = MAX RATED
−8
10 s
DC
10
10
qJA = 175 o
R
C/W
TJ = 25 o
C
−9
= 25 o
TA
C
−10
10
0.1
1
10
60
0
3
6
9
12
15
−V , DRAIN TO SOURCE VOLTAGE (V)
DS
−V , GATE TO SOURCE VOLTAGE (V)
GS
Figure 9. Forward Bias Safe Operating
Area
Figure 10. Gate Leakage Current vs.
Gate to Source Voltage
500
100
SINGLE PULSE
qJA = 175 oC/W
R
T
A = 25 o
C
10
1
0.5
10−4
10−3
10−2
10−1
t, PULSE WIDTH (s)
1
10
100
1000
Figure 11. Single Pulse Maximum Power Dissipation
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5
FDME510PZT
TYPICAL CHARACTERISTICS (T = 25°C, unless otherwise noted) (continued)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.01
P
DM
t
1
t
2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t /t
qJA = 175 oC/W
1
2
R
PEAK T = P x Z
x R
+ T
qJA A
J
DM
qJA
0.001
10−4
10−3
10−2
10−1
1
10
100
1000
t, RECTANGULAR PULSE DURATION (s)
Figure 12. Junction−to−Ambient Transient Thermal Response Curve
POWERTRENCH is a registered trademark and MicroFET is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/
or subsidiaries in the United States and/or other countries.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
UDFN6 1.6x1.6, 0.5P
CASE 517DV
ISSUE O
DATE 31 OCT 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13700G
UDFN6 1.6x1.6, 0.5P
PAGE 1 OF 1
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