FDMQ86530L [ONSEMI]
N 沟道，PowerTrench® MOSFET，GreenBridge™ 系列高效桥式整流器，60V，8A，17.5mΩ;
| 型号： | FDMQ86530L |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，GreenBridge™ 系列高效桥式整流器，60V，8A，17.5mΩ 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：310K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – N-Channel,
POWERTRENCH)
Top
GreenBridgetSeries of
High-Efficiency Bridge
Rectifiers
60 V, 8 A, 17.5 mW
Bottom
Pin 1
G4
D1/D4
D3/S4
G3
S3
S3
G1
D1/D4
D1/D4
S1/D2
FDMQ86530L
G2
S2
S2
D3/
S4
S1/
D2
General Description
This Quad MOSFET solution provides ten−fold improvement in
power dissipation over diode bridge.
MLP 4.5x5
Features
• Max R
• Max R
• Max R
= 17.5 mW at V = 10 V, I = 8 A
GS D
DS(on)
DS(on)
DS(on)
MARKING DIAGRAM
= 23 mW at V = 6 V, I = 7 A
GS
D
= 25 mW at V = 4.5 V, I = 6.5 A
GS
D
• Substantial Efficiency Benefit in PD Solutions
ZXYKK
FDMQ
86530L
• This Device is Pb−Free, Halide Free, and RoHS Compliant
Applications
• Active Bridge
• Diode Bridge Replacement in 24 V & 48 V AC Systems
Z
XY
KK
= Assembly Plant Code
= Data Code (Year and Week)
= Lot Traceability Code
FDMQ86530L = Specific Device Code
G1
G4
D1/D4
D1/D4
D3/S4
G3
Q4
Q1
S1/D2
G2
S2
S3
Q2
Q3
S2
S3
ORDERING INFORMATION
†
Device
Package
Shipping
FDMQ86530L
WDFN−12
(Pb-Free, Halide
Free)
3000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
August, 2022 − Rev. 2
FDMQ86530L/D
FDMQ86530L
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Ratings
Unit
V
V
DS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
60
20
V
I
D
Continuous
T
C
= 25°C
8
A
Continuous (Note 1a)
Pulsed
T = 25°C
8
A
50
22
P
D
Power Dissipation
T
C
= 25°C
W
Power Dissipation (Note 1a)
Operating and Storage Junction Temperature Range
T = 25°C
A
1.9
T , T
−55 to +150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
RqJA
Parameter
Thermal Resistance, Junction to Ambient (Note 1a)
Thermal Resistance, Junction to Ambient (Note 1b)
Ratings
65
Unit
°C/W
RqJA
135
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 250 mA, V = 0 V
60
−
−
−
V
DSS
D
GS
Breakdown Voltage Temperature
Coefficient
= 250 mA, referenced to 25°C
−
27
mV/°C
DBVDSS
DTJ
D
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 48 V, V = 0 V
−
−
−
−
1
mA
DSS
GSS
DS
GS
I
=
20 V, V = 0 V
100
nA
GS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = 250 mA
1
1.8
3
V
GS(th)
GS
DS D
Gate to Source Threshold Voltage
Temperature Coefficient
= 250 mA, referenced to 25°C
−
−6
−
mV/°C
DVGS(th)
DTJ
D
R
Static Drain to Source On Resistance
Forward Transconductance
V
GS
V
GS
V
GS
V
GS
V
DS
= 10 V, I = 8 A
−
−
−
−
−
12
15
20
18
28
17.5
23
25
26
−
mW
DS(on)
D
= 6 V, I = 7 A
D
= 4.5 V, I = 6.5 A
D
= 10 V, I = 8 A, T = 125°C
D
J
g
FS
= 5 V, I = 8 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 30 V, V = 0 V, f = 1 MHz
−
−
−
1725
299
10
2295
400
15
pF
pF
pF
iss
GS
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Rise Time
V
= 30 V, I = 8 A, V = 10 V,
GEN
−
−
−
−
8.8
3.8
22
18
10
35
10
ns
d(on)
DD
D
GS
R
= 6 W
t
r
t
Turn−Off Delay Time
Fall Time
d(off)
t
f
2.8
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2
FDMQ86530L
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
Q
Total Gate Charge
V
GS
V
GS
V
DD
= 0 V to 10 V, V = 30 V, I = 8 A
−
−
−
−
23
11
33
16
−
nC
g
g
DD
D
Q
Total Gate Charge
= 0 V to 4.5 V, V = 30 V, I = 8 A
DD D
Q
gs
Q
gd
Gate to Charge
= 30 V, I = 8 A
5.1
2.3
D
Gate to Drain “Miller” Charge
−
DRAIN−SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward
Voltage
V
V
= 0 V, I = 8 A (Note 2)
−
−
−
−
0.8
0.7
27
1.3
1.2
43
V
SD
GS
S
= 0 V, I = 1.6 A (Note 2)
GS
S
t
Reverse Recovery Time
I = 8 A, di/dt = 100 A/ms
F
ns
rr
Q
Reverse Recovery Charge
12
22
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed
JC
q
q
JA
by design while R
is determined by the user’s board design.
q
CA
a. 65°C/W when mounted on
b. 135°C/W when mounted on
a minimum pad of 2 oz copper
the board designed Q1 + Q3 or
Q2 + Q4.
2
a 1 in pad of 2 oz copper
the board designed Q1 + Q3
or Q2 + Q4.
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
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3
FDMQ86530L
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
5
50
40
30
20
V
= 10 V
= 6 V
V
= 3.5 V
GS
GS
V
= 4.5 V
GS
V
GS
V
GS
= 4 V
4
3
V
= 5 V
GS
V
= 4 V
GS
V
GS
= 4.5 V
V
GS
= 5 V
2
1
0
V
= 3.5 V
GS
10
0
PULSE DURATION = 80 ms
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
GS
= 6 V
DUTY CYCLE = 0.5% MAX
V
GS
= 10 V
20
30
40
0
10
50
0.5
1.0
1.5
0.0
I , Drain Current (A)
D
V
DS
, Drain To Voltage (V)
Figure 2. Normalized On−Resistance
vs Drain Current and Gate Voltage
Figure 1. On−Region Characteristics
50
40
30
20
10
0
1.8
1.6
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
I
D
= 8 A
I
V
= 8 A
D
= 10 V
GS
1.4
1.2
T = 125 °C
J
1.0
0.8
0.6
T = 25 °C
J
4
6
8
10
−75 −50 −25
0
25
50 75 100 125 150
0
T , Junction Temperature (°C)
J
V
GS
, Gate To Source Voltage (V)
Figure 4. On−Resistance vs Gate to
Figure 3. Normalized On−Resistance
Source Voltage
vs Junction Temperature
50
40
30
20
10
0
60
10
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
= 0 V
GS
V
= 5 V
DS
T = 150 °C
J
1
0.1
T = 25 °C
J
T = 150 °C
J
T = 25 °C
J
T = −55 °C
J
0.01
0.001
T = −55 °C
J
2
3
4
5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1
V
GS
, Gate To Source Voltage (V)
V
SD
, Body Diode Forward Voltage (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
Figure 5. Transfer Characteristics
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4
FDMQ86530L
TYPICAL CHARACTERISTICS (continued)
(T = 25°C unless otherwise noted)
J
10
8
10000
1000
I
D
= 8 A
C
iss
V
DD
= 20 V
V
DD
= 30 V
6
4
C
oss
V
DD
= 40 V
100
C
rss
10
1
2
0
f = 1 MHz
= 0 V
V
GS
25
0.1
1
10
0
5
10
15
20
60
V
DS
, Drain to Source Voltage (V)
Q , Gate Charge (nC)
g
Figure 8. Capacitance vs Drain to Source Voltage
Figure 7. Gate Charge Characteristics
70
10
3000
Single Pulse
= 135°C/W
T = 25°C
A
1000
100
10
R
q
JA
100 ms
1
1 ms
This Area Is
Limited By R
DS(on)
10 ms
Single Pulse
T = Max Rated
0.1
J
1 s
R
= 135°C/W
q
JA
Derived From
Test Data
10 s
T = 25°C
A
0.01
1
DC
0.005
0.5
10
−3
−2
−4
−1
1000
100
0.01
0.1
1
10
100
300
10
10
1
10
10
t, Pulse Width (s)
V
DS
, Drain to Source Voltage (V)
Figure 9. Forward Bias Safe Operating Area
Figure 10. Single Pulse Maximum Power Dissipation
2
1
Duty Cycle−Descending Order
D = 0.5
0.2
0.1
0.05
0.1
P
DM
0.02
0.01
t
1
0.01
t
2
NOTES:
Duty Factor D = t / t
0.001
1
2
Single Pulse
PEAK T = P
× Z
× R
+ T
A
q
q
JA
J
DM
JA
R
= 135°C/W
q
JA
0.0001
−3
−2
−4
−1
1
100
1000
10
10
10
10
10
t, Rectangular Pulse Duration (s)
Figure 11. Junction−to−Ambient Transient Thermal Response Curve
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5
FDMQ86530L
GreenBridge is registered trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States
and/or other countries.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN12 5x4.5, 0.8P
CASE 511CR
ISSUE A
DATE 21 MAR 2017
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13606G
WDFN12 5X4.5, 0.8P
PAGE 1 OF 1
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© Semiconductor Components Industries, LLC, 2019
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