FDMS1D4N03S [ONSEMI]
N 沟道，PowerTrench® SyncFETTM，30V，211A，1.09mΩ;
| 型号： | FDMS1D4N03S |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® SyncFETTM，30V，211A，1.09mΩ |
| 文件： | 总9页 (文件大小：609K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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www.onsemi.com
FDMS1D4N03S
N-Channel PowerTrench® SyncFETTM
30 V, 211 A, 1.09 mΩ
Features
General Description
The FDMS1D4N03S has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance. This
device has the added benefit of an efficient monolithic schottky
body diode.
Max rDS(on) = 1.09 mΩ at VGS = 10 V, ID = 38 A
Max rDS(on) = 1.3 mΩ at VGS = 4.5 V, ID = 35 A
High Performance Technology for Extremely Low rDS(on)
SyncFETTM Schottky Body Diode
100% UIL Tested
Applications
RoHS Compliant
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/ GPU Low Side Switch
Networking Point of Load Low Side Switch
Telecom Secondary Sde Rectification
D
D
D
D
D
D
G
D
5
6
7
8
4
3
2
1
S
S
S
G
S
S
Pin 1
S
D
Top
Bottom
Power 56
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted.
Symbol
VDS
VGS
Parameter
Ratings
30
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
V
V
±16
TC = 25 °C
C = 100 °C
(Note 5)
(Note 5)
(Note 1a)
(Note 4)
(Note 3)
211
T
134
ID
A
-Continuous
TA = 25 °C
38
-Pulsed
1140
384
EAS
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
mJ
W
TC = 25 °C
TA = 25 °C
74
PD
(Note 1a)
2.5
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
1.7
50
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13 ’’
Tape Width
12 mm
Quantity
FDMS1D4N03S
FDMS1D4N03S
Power 56
3000 units
Semiconductor Components Industries, LLC, 2016
December, 2016, Rev. 1.0
Publication Order Number:
FDMS1D4N03S/D
1
Electrical Characteristics TJ = 25 °C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 1 mA, VGS = 0 V
D = 10 mA, referenced to 25 °C
30
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
I
20
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = 24 V, VGS = 0 V
VGS = ±16 V, VDS = 0 V
500
μA
±100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 1 mA
1
1.6
-4
3
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
I
D = 10 mA, referenced to 25 °C
GS = 10 V, ID = 38 A
mV/°C
V
0.8
1.0
1.2
281
1.09
1.3
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
VGS = 4.5 V, ID = 35 A
mΩ
VGS = 10 V, ID = 38 A, TJ = 125 °C
VDS = 5 V, ID = 38 A
1.7
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
7320
1950
101
10250
2730
180
pF
pF
pF
Ω
VDS = 15 V, VGS = 0 V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
0.1
0.5
1.5
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
21
6
33
12
ns
ns
VDD = 15 V, ID = 38 A,
VGS = 10 V, RGEN = 6 Ω
Turn-Off Delay Time
Fall Time
51
5
82
ns
10
ns
Qg
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V
102
46
18
9
143
65
nC
nC
nC
nC
Qg
VDD = 15 V,
D = 38 A
I
Qgs
Qgd
Drain-Source Diode Characteristics
V
GS = 0 V, IS = 2.1 A
(Note 2)
(Note 2)
0.7
0.8
44
1.2
1.3
70
VSD
Source to Drain Diode Forward Voltage
V
VGS = 0 V, IS = 38 A
trr
Reverse Recovery Time
ns
IF = 38 A, di/dt = 246 A/μs
Qrr
Reverse Recovery Charge
70
112
nC
Notes:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R
is determined by
θJA
θJC
θCA
the user's board design.
b)
a) 50 °C/W when mounted on a
125 °C/W when mounted on a
minimum pad of 2 oz copper.
2
1 in pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. E of 384 mJ is based on starting T = 25 °C, L = 3 mH, I =16 A, V =30 V, V = 10 V. 100% tested at L = 0.1 mH, I = 52 A.
AS
J
AS
DD
GS
AS
4. Pulse Id please refer to Fig.11 SOA curve for detail.
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design
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2
Typical Characteristics TJ = 25 °C unless otherwise noted.
200
3
2
1
0
VGS = 10 V
VGS = 3 V
VGS = 4.5 V
150
VGS = 4 V
VGS = 3.5 V
VGS = 3.5 V
VGS = 3 V
100
VGS = 4 V VGS = 4.5 V
PULSE DURATION = 80 μs
VGS = 10 V
50
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
DUTY CYCLE = 0.5% MAX
0
0.0
0.2
0.4
0.6
0
40
80
120
160
200
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs. Drain Current and Gate Voltage
1.6
8
ID = 38 A
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
ID = 38 A
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
VGS = 10 V
6
4
2
0
TJ = 125 o
C
TJ = 25 o
C
-75 -50 -25
0
25 50 75 100 125 150
0
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs. Junction Temperature
Figure4. On-Resistance vs. Gate to
Source Voltage
200
200
100
VGS = 0 V
VDS = 5 V
10
150
100
50
TJ = 125 o
C
TJ = 25 o
C
TJ = 125 o
C
1
TJ = 25 o
C
TJ = -55 o
C
0.1
TJ = -55 o
C
0.01
0.001
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
1
2
3
4
5
0.0
0.2
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs. Source Current
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3
Typical Characteristics TJ = 25 °C unless otherwise noted.
6
10000
1000
100
ID = 38 A
Ciss
VDD = 15 V
Coss
4
VDD = 10 V
VDD = 20 V
2
Crss
f = 1 MHz
GS = 0 V
V
0
10
0
20
40
60
80
0.1
1
10
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s . D r a i n
to Source Voltage
100
240
192
144
96
VGS = 10 V
TJ = 25 oC
TJ = 100 o
10
C
VGS = 4.5 V
TJ = 125 o
C
48
RθJC = 1.7 oC/W
1
0
0.001
0.01
0.1
1
10
100
1000
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE (ms)
F i g u r e 9 . U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10. Maximum Continuous Drain
Current vs. Case Temperature
105
2000
1000
SINGLE PULSE
RθJC = 1.7 oC/W
10 μs
104
103
102
10
T
C = 25 oC
100
10
100 μs
1 ms
10 ms
100 ms
THIS AREA IS
LIMITED BY rDS(on)
1
SINGLE PULSE
TJ = MAX RATED
RθJC = 1.7 oC/W
0.1
0.01
CURVE BENT TO
MEASURED DATA
T
C = 25 oC
10-5
10-4
10-3
t, PULSE WIDTH (sec)
10-2
10-1
1
0.01
0.1
1
10
100
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
Figure12. Single Pulse Maximum
Power Dissipation
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4
Typical Characteristics TJ = 25 °C unless otherwise noted.
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
P
DM
0.05
0.02
0.01
0.1
0.01
t
1
t
2
NOTES:
(t) = r(t) x R
Z
R
θJC
θJC
o
= 1.7 C/W
θJC
SINGLE PULSE
Peak T = P
x Z (t) + T
J
DM
θJC C
Duty Cycle, D = t / t
1
2
0.001
10-5
10-4
10-3
10-2
10-1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Case Transient Thermal Response Curve
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5
Typical Characteristics (continued)
TM
SyncFET Schottky body diode
Characteristics
Fairchild’s SyncFETTM process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
with
a MOSFET. Figure 14 shows the reverse recovery
characteristic of the FDMS1D4N03S.
10-2
40
35
30
25
20
15
10
5
TJ = 125 o
C
10-3
10-4
10-5
10-6
TJ = 100 o
C
Di/Dt = 246 A/μs
TJ = 25 o
C
0
-5
0
5
10
15
20
25
30
0
100
200
300
400
500
VDS, REVERSE VOLTAGE (V)
TIME (ns)
Figure 14. FDMS1D4N03S SyncFETTM Body
Diode Reverse Recovery Characteristic
Figure 15. SyncFETTM Body Diode Reverse
Leakage vs. Drain-Source Voltage
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6
PQFN8 5X6, 1.27P
CASE 483AE
ISSUE A
5.10
3.91
5.10
PKG
A
SEE
DETAIL B
1.27
6.61
C
L
B
8
7
6
5
8
5
0.77
4.52
3.75
5.85
5.65
C
PKG
6.15
L
KEEP OUT
AREA
1.27
1
4
1
2
3
4
TOP VIEW
0.61
1.27
3.81
LAND PATTERN
RECOMMENDATION
OPTIONAL DRAFT
ANGLE MAY APPEAR
ON FOUR SIDES
SEE
DETAIL C
5.00
4.80
OF THE PACKAGE
0.35
0.15
ꢀꢁꢂꢃ
0.10 C
0.30
0.05
0.05
0.00
SIDE VIEW
ꢀꢁꢂꢃ
8X
0.08 C
C
0.35
0.15
5.20
4.80
1.10
0.90
SEATING
PLANE
DETAIL C
DETAIL B
SCALE: 2:1
3.81
SCALE: 2:1
1.27
0.51
(8X)
0.31
NOTES: UNLESS OTHERWISE SPECIFIED
(0.34)
A. PACKAGE STANDARD REFERENCE: JEDEC MO-240,
ISSUE A, VAR. AA,.
0.10
C A B
1
2
3
4
B. DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH.
MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
0.76
0.51
(0.52)
D. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-2009.
E. IT IS RECOMMENDED TO HAVE NO TRACES OR
VIAS WITHIN THE KEEP OUT AREA.
6.25
5.90
+0.30
3.48
-0.10
(0.50)
(0.30)
(2X)
8
7
6
5
ꢀꢄꢅꢅꢀꢄꢂꢀ
+0.10
-0.15
0.20
(8X)
3.96
3.61
BOTTOM VIEW
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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