FDMS2572 [ONSEMI]
N 沟道，UltraFET Trench® MOSFET，150V，27A，47mΩ;
| 型号： | FDMS2572 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，UltraFET Trench® MOSFET，150V，27A，47mΩ 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：303K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – N-Channel,
UltraFET Trench
S
S
G
S
Pin 1
150 V, 27 A, 47 mW
FDMS2572
D
D
D
D
General Description
Power 56 (Bottom View)
UItraFETt devices combine characteristics that enable benchmark
WDFN8 5x6, 1.27P
CASE 506DP
efficiency in power conversion applications. Optimized for r
,
DS(on)
low ESR, low total and Miller gate charge, these devices are ideal for
high frequency DC to DC converters.
ELECTRICAL CONNECTION
Features
• Max r
• Max r
= 47 mW at V = 10 V, I = 4.5 A
GS D
DS(on)
DS(on)
= 53 mW at V = 6 V, I = 4.5 A
D
D
G
S
5
6
7
8
4
3
2
1
GS
D
• Low Miller Charge
• Optimized Efficiency at High Frequencies
• UIS Capability (Single Pulse and Repetitive Pulse)
• This Device is Pb−Free and is RoHS Compliant
S
S
D
D
Applications
• Distributed Power Architectures and VRMs
• Primary Switch for 24 V and 48 V Systems
• High Voltage Synchronous Rectifier
N-Channel MOSFET
MARKING DIAGRAM
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Drain to Source Voltage
Ratings
150
Unit
V
&Z&2&K
FDMS
2572
V
DS
V
GS
Gate to Source Voltage
20
V
I
D
Drain Current:
A
− Continuous (Package limited) T = 25°C
27
27
4.5
30
C
− Continuous (Silicon limited) T = 25°C
C
&Z
&2
&K
= Assembly Plant Code
= Numeric Date Code
= Lot Code
− Continuous, T = 25°C (Note 1a)
A
− Pulsed
E
Single Pulse Avalanche Energy (Note 3)
150
mJ
W
AS
FDMS2572
= Specific Device Code
P
Power Dissipation:
D
T
A
= 25°C
78
2.5
C
T = 25°C (Note 1a)
ORDERING INFORMATION
T , T
Operating and Storage Junction
Temperature Range
−55 to +150
°C
See detailed ordering and shipping information on page 3 of
this data sheet.
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
1.6
Unit
Thermal Resistance, Junction to Case
°C/W
R
q
JC
R
Thermal Resistance, Junction to Ambient
(Note 1a)
50
q
JA
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
May, 2023 − Rev. 2
FDMS2572/D
FDMS2572
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
I
I
= 250 mA, V = 0 V
GS
BVDSS
Drain to Source Breakdown Voltage
150
V
D
DBV
/DT
J
DSS
= 250 mA, referenced to 25°C
Breakdown Voltage Temperature
Coefficient
180
mV/°C
D
mA
IDSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 120 V, V = 0 V
1
DS
GS
IGSS
=
20 V, V = 0 V
100
nA
GS
DS
ON CHARACTERISTICS (Note 2)
Gate to Source Threshold Voltage
V
I
= V , I = 250 mA
DS D
V
GS(th)
2
3
4
V
GS
DV
/DT
GS(th)
J
= 250 mA, referenced to 25 °C
Gate to Source Threshold Voltage
Temperature Coefficient
−9.8
mV/°C
D
V
GS
V
GS
V
GS
V
DS
= 10 V, I = 4.5 A
36
39
69
14
47
53
D
= 6 V, I = 4.5 A
r
Static Drain to Source On Resistance
Forward Transconductance
mW
D
DS(on)
= 10 V, I = 4.5 A, T = 125 °C
103
D
J
g
= 10 V, I = 4.5 A
S
FS
D
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
R
g
Input Capacitance
1960
130
30
2610
175
45
pF
pF
pF
W
V
= 75 V, V = 0 V,
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
DS
GS
f = 1 MHz
f = 1 MHz
0.1
1.3
2.6
SWITCHING CHARACTERISTICS
t
t
t
t
Turn-On Delay Time
Rise Time
11
8
20
16
61
50
43
ns
ns
d(on)
r
V
V
= 75 V, I = 1.0 A,
D
DD
GS
= 10 V, R
= 6 W
GEN
Turn-Off Delay Time
Fall Time
38
31
31
9
ns
d(off)
f
ns
Q
Q
Q
Total Gate Charge at 10 V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
V
= 0 V to 10 V, V = 75 V, I = 4.5 A
nC
nC
nC
g(TOT)
gs
GS
DD
D
= 75 V, I = 4.5 A
DD
D
7
gd
DRAIN−SOURCE DIODE CHARACTERISTICS
.V = 0 V, IS = 2.2 A
(Note 2)
V
VSD
Source to Drain Diode Forward Voltage
Reverse Recovery Time
0.7
67
1.0
101
195
GS
t
rr
ns
nC
IF = 4.5 A, di/dt = 100 A/ms
Q
rr
Reverse Recovery Charge
130
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. R
is guaranteed
JC
q
q
JA
by design while R
is determined by the user’s board design.
q
CA
a) 50°C/W when mounted on
b) 125°C/W when mounted on
2
a 1 in pad of 2 oz copper.
a minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. E of 150 mJ is based on starting T = 25_C, L = 3 mH, I = 10 A, V = 150 V. V = 10 V.
AS
J
AS
DD
GS
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2
FDMS2572
ORDERING INFORMATION AND PACKAGE MARKING
†
Device
Device Marking
FDMS2572
Package
Shipping
FDMS2572
WDFN8 5x6, 1.27P (Pb−Free)
3000 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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3
FDMS2572
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
1.8
40
35
10V
=
PULSE DURATION = 300ms
DUTY CYCLE = 2.0%MAX
V
GS
V
GS =4.5V
PULSE DURATION = 300ms
DUTY CYCLE = 2.0%MAX
1.6
1.4
1.2
1.0
0.8
V
= 6V
GS
30
25
20
15
VGS =5.5V
VGS =5V
V
= 5.5V
GS
VGS = 6V
5V
=
V
GS
10
5
VGS = 10V
4.5V
=
V
GS
0
0
1
2
3
4
5
0
8
16
24
32
40
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs.
Drain Current and Gate Voltage
2.4
110
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
PULSE DURATION =300 ms
DUTY CYCLE = 2.0%MAX
I
= 4.5A
= 10V
I
D
= 4.5A
D
100
90
V
GS
= 150oC
80
T
J
70
60
50
40
30
= 25o
T
J
C
−75 −50 −25
0
25 50 75 100 125 150
3
4
5
6
7
8
9
10
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On−Resistance
Figure 4. On−Resistance vs. Gate to
vs. Junction Temperature
Source Voltage
60
10
60
PULSE DURATION = 300 ms
DUTY CYCLE = 2.0%MAX
V
GS
= 0V
50
= 125oC
1
0.1
T
J
40
T
= 125oC
30
20
J
T
= 25oC
J
0.01
1E−3
1E−4
T
= 25oC
J
10
0
T
= −55oC
J
T
=−55oC
J
2
3
4
5
6
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs. Source Current
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4
FDMS2572
TYPICAL CHARACTERISTICS (continued)
(T = 25°C unless otherwise noted)
J
10
8
3000
I
D
= 4.5A
C
iss
V
DD
=50V
1000
V
DD
= 75V
6
V
DD
= 100V
C
oss
100
4
2
C
rss
f = 1MHz
= 0V
V
GS
10
0
0.1
1
10
, DRAIN TO SOURCE VOLTAGE (V)
DS
100
0
7
14
21
28
35
Q , GATE CHARGE (nC)
V
g
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain
to Source Voltage
6
5
6
5
4
3
2
1
0
4
V
GS
= 10V
TJ = 25oC
3
V
GS
= 6V
2
TJ = 125oC
o
R
qJA
= 50 C/W
1
0.01
25
50
75
100
125
150
0.1
1
10
50
t , TIME IN AVALANCHE (ms)
AV
T , AMBIENT TEMPERATURE (°C)
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Ambient Temperature
60
2000
1000
100us
VGS = 10V
FOR TEMPERATURES
10
1
o
1ms
ABOVE 25 C DERATE PEAK
CURRENT AS FOLLOWS:
100
10
10ms
100ms
1s
150 –T
A
−
I = I
25
125
o
0.1
T
= 25 C
A
OPERATION IN THIS
AREA MAY BE
10s
DC
LIMITED BY rDS(on)
0.01
SINGLE PULSE
T
J
= MAX RATED
= 25O
SINGLE PULSE
1
T
C
A
1E−3
0.5
−3
−2
−1
0.1
1
10
100
600
10
10
10
1
10
100
1000
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
t, PULSE WIDTH (s)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum
Power Dissipation
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5
FDMS2572
TYPICAL CHARACTERISTICS (continued)
(T = 25°C unless otherwise noted)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
DM
0.01
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
SINGLE PULSE
PEAK T = P
x Z
x R
+ T
J
DM
qJA
qJA A
1E−3
5E−4
10−3
10−2
10−1
t, RECTANGULAR PULSE DURATION (s)
1
10
100
1000
Figure 13. Transient Thermal Response Curve
UltraFET is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 5x6, 1.27P
CASE 506DP
ISSUE O
DATE 31 AUG 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13598G
WDFN8 5X6, 1.27P
PAGE 1 OF 1
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