FDMS3610S [ONSEMI]
PowerTrench® 功率级;
| 型号： | FDMS3610S |
| 厂家： | 
ONSEMI |
| 描述： | PowerTrench® 功率级 |
| 文件： | 总14页 (文件大小：451K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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December 2011
FDMS3610S
PowerTrench® Power Stage
25V Asymmetric Dual N-Channel MOSFET
Features
General Description
Q1: N-Channel
This device includes two specialized N-Channel MOSFETs in a
dual PQFN package. The switch node has been internally
connected to enable easy placement and routing of synchronous
buck converters. The control MOSFET (Q1) and synchronous
SyncFET (Q2) have been designed to provide optimal power
efficiency.
Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17.5 A
Max rDS(on) = 5.7 mΩ at VGS = 4.5 V, ID = 16 A
Q2: N-Channel
Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A
Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 27 A
Applications
Low inductance packaging shortens rise/fall times, resulting in
lower switching losses
Computing
MOSFET integration enables optimum layout for lower circuit
inductance and reduced switch node ringing
Communications
General Purpose Point of Load
Notebook VCORE
RoHS Compliant
G1
Pin 1
D1
D1
D1
D1
Pin 1
PHASE
(S1/D2)
G2
S2
S2
S2
Bottom
Top
Power 56
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
Parameter
Q1
25
Q2
25
Units
Drain to Source Voltage
Gate to Source Voltage
V
V
(Note 4)
TC = 25 °C
TA = 25 °C
±12
±12
Drain Current
-Continuous (Package limited)
-Continuous
30
60
ID
17.51a
70
301b
120
86
2.51b
1.01d
A
-Pulsed
EAS
Single Pulse Avalanche Energy
(Note 3)
TA = 25 °C
TA = 25 °C
29
mJ
W
Power Dissipation for Single Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
2.21a
1.01c
PD
TJ, TSTG
-55 to +150
°C
Thermal Characteristics
RθJA
RθJA
RθJC
Thermal Resistance, Junction to Ambient
571a
1251c
3.0
501b
1201d
2.2
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
°C/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13 ”
Tape Width
Quantity
08OD
07OD
FDMS3610S
Power 56
12 mm
3000 units
©2011 Fairchild Semiconductor Corporation
FDMS3610S Rev.C1
1
www.fairchildsemi.com
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
Off Characteristics
I
I
D = 250 μA, VGS = 0 V
D = 1 mA, VGS = 0 V
Q1
Q2
25
25
BVDSS
Drain to Source Breakdown Voltage
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
D = 10 mA, referenced to 25 °C
Q1
Q2
12
24
mV/°C
I
Q1
Q2
1
500
μA
μA
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = 20 V, VGS = 0 V
Q1
Q2
±100
±100
nA
nA
VGS = 12 V/-8 V, VDS= 0 V
On Characteristics
V
V
GS = VDS, ID = 250 μA
GS = VDS, ID = 1 mA
Q1
Q2
0.8
1.1
1.2
1.4
2 . 0
2.2
VGS(th)
Gate to Source Threshold Voltage
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
D = 10 mA, referenced to 25 °C
VGS = 10 V, ID = 17.5 A
Q1
Q2
-4
-3
mV/°C
I
3.8
4.4
5.4
5.0
5.7
7.0
V
V
GS = 4.5 V, ID = 16 A
GS = 10 V, ID = 17.5 A,TJ =125 °C
Q1
Q2
rDS(on)
Drain to Source On Resistance
mΩ
V
V
V
GS = 10 V, ID = 30 A
GS = 4.5 V, ID = 27 A
GS = 10 V, ID =30 A ,TJ =125 °C
1.5
1.8
2.1
1.8
2.2
2.7
V
V
DS = 5 V, ID = 17.5 A
DS = 5 V, ID = 30 A
Q1
Q2
100
240
gFS
Forward Transconductance
S
Dynamic Characteristics
Q1
Q2
1570
4045
Q1:
Ciss
Coss
Crss
Rg
Input Capacitance
pF
pF
pF
Ω
VDS = 13 V, VGS = 0 V, f = 1 MHZ
Q1
Q2
448
946
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Q2:
VDS = 13 V, VGS = 0 V, f = 1 MHZ
Q1
Q2
61
117
Q1
Q2
0.4
0.9
Switching Characteristics
Q1
Q2
7
11
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
ns
ns
Q1:
Q1
Q2
2
5
VDD = 13 V, ID = 17.5 A, RGEN = 6 Ω
Q1
Q2
23
39
Q2:
Turn-Off Delay Time
Fall Time
ns
VDD = 13 V, ID = 30A, RGEN = 6 Ω
Q1
Q2
2
4
ns
Q1
Q2
26
59
Qg
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VGS = 0 V to 10 V
Q1
nC
nC
nC
nC
V
DD = 13 V,
Q1
Q2
12
27
Qg
VGS = 0 V to 4.5 V
I
D = 17.5 A
Q1
Q2
3.3
8.2
Q2
VDD = 13 V,
Qgs
Qgd
Q1
Q2
2.7
7.6
I
D = 30 A
©2011 Fairchild Semiconductor Corporation
FDMS3610S Rev.C1
2
www.fairchildsemi.com
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
Drain-Source Diode Characteristics
V
V
GS = 0 V, IS = 17.5 A
GS = 0 V, IS = 30 A
(Note 2) Q1
(Note 2) Q2
0.8
0.8
1.2
1.2
VSD
trr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
V
Q1
Q2
23
28
Q1
ns
nC
IF = 17.5 A, di/dt = 100 A/μs
Q2
IF = 30 A, di/dt = 300 A/μs
Q1
Q2
9
28
Qrr
Reverse Recovery Charge
Notes:
2
1.R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R is determined by
θCA
θJA
θJC
the user's board design.
b. 50 °C/W when mounted on
a 1 in pad of 2 oz copper
a. 57 °C/W when mounted on
a 1 in pad of 2 oz copper
2
2
d. 120 °C/W when mounted on a
minimum pad of 2 oz copper
c. 125 °C/W when mounted on a
minimum pad of 2 oz copper
2 Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
o
3. Q1 :E of 29 mJ is based on starting T = 25 C; N-ch: L = 1.2 mH, I = 7 A, V = 23 V, V = 10 V. 100% test at L = 0.1 mH, I = 16 A.
AS
J
AS
DD
GS
AS
o
Q2: E of 86 mJ is based on starting T = 25 C; N-ch: L = 0.6 mH, I = 17 A, V = 23 V, V = 10 V. 100% test at L = 0.1 mH, I = 31 A.
AS
J
AS
DD
GS
AS
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
©2011 Fairchild Semiconductor Corporation
FDMS3610S Rev.C1
3
www.fairchildsemi.com
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted
70
60
50
40
30
20
10
0
3.0
2.5
2.0
1.5
1.0
0.5
VGS = 10 V
VGS = 4.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 2.5 V
VGS = 3.5 V
VGS = 3 V
VGS = 3 V
VGS = 2.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 4.5 V VGS = 10 V
VGS = 3.5 V
0.0
0.3
0.6
0.9
1.2
1.5
0
10
20
30
40
50
60
70
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
1.8
1.6
1.4
1.2
1.0
0.8
0.6
20
16
12
8
ID = 17.5 A
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
ID = 17.5 A
VGS = 10 V
TJ = 125 oC
4
TJ = 25 o
C
0
-75 -50 -25
0
25 50 75 100 125 150
2
3
4
5
6
7
8
9
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
70
70
PULSE DURATION = 80 μs
VGS = 0 V
DUTY CYCLE = 0.5% MAX
60
50
40
30
20
10
0
10
1
VDS = 5 V
TJ = 150 o
C
TJ = 25 oC
TJ = 150 o
C
0.1
TJ = 25 o
C
TJ = -55 o
C
TJ = -55 o
C
0.01
0.001
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
©2011 Fairchild Semiconductor Corporation
FDMS3610S Rev.C1
4
www.fairchildsemi.com
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted
2000
1000
10
8
ID = 17.5 A
Ciss
VDD = 10 V
VDD = 15 V
VDD = 13 V
Coss
6
100
4
Crss
2
f = 1 MHz
= 0 V
V
GS
10
0
0.1
1
10
30
0
4
8
12
16
20
24
28
VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE (nC)
g
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
50
80
70
60
50
40
30
20
10
0
VGS = 10 V
TJ = 25 oC
10
VGS = 4.5 V
TJ = 100 oC
TJ = 125 o
C
Limited by Package
R
θJC = 3.0 oC/W
1
0.001
0.01
0.1
1
10
50
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE (ms)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10. Maximum Continuous Drain
Current vs Case Temperature
100
10
1000
SINGLE PULSE
θJA = 125 oC/W
R
100 μs
100
10
1 ms
1
THIS AREA IS
10 ms
LIMITED BY r
DS(on)
100 ms
SINGLE PULSE
TJ = MAX RATED
θJA = 125 oC/W
TA = 25 oC
1s
10s
DC
0.1
R
1
0.01
0.5
10-4
10-3
10-2
t, PULSE WIDTH (sec)
10-1
1
10
0.01
0.1
1
10
100200
100 1000
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
Figure12. Single Pulse Maximum
Power Dissipation
©2011 Fairchild Semiconductor Corporation
FDMS3610S Rev.C1
5
www.fairchildsemi.com
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.1
0.01
0.02
0.01
P
DM
t
1
SINGLE PULSE
θJA = 125 oC/W
t
2
NOTES:
DUTY FACTOR: D = t /t
R
1
2
(Note 1b)
PEAK T = P
J
x Z
x R
+ T
DM
θJA
θJA A
0.001
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
©2011 Fairchild Semiconductor Corporation
FDMS3610S Rev.C1
6
www.fairchildsemi.com
Typical Characteristics (Q2 N-Channel) TJ = 25 °C unless otherwise noted
120
100
80
60
40
20
0
4
3
2
1
0
VGS = 10 V
VGS = 4.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 2.5 V
VGS = 3.5 V
VGS = 3 V
VGS = 2.5 V
VGS = 3.5 V
VGS = 3 V
VGS = 10 V
VGS = 4.5 V
80
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0.0
0.3
0.6
0.9
1.2
1.5
0
20
40
60
100
120
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 14. On-Region Characteristics
Figure 15. Normalized on-Resistance vs Drain
Current and Gate Voltage
1.6
7
ID = 30 A
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 10 V
6
1.4
1.2
1.0
0.8
0.6
5
ID = 30 A
4
3
TJ = 125 oC
2
1
TJ = 25 o
C
0
-75 -50 -25
0
25 50 75 100 125 150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 17. On-Resistance vs Gate to
Source Voltage
Figure 16. Normalized On-Resistance
vs Junction Temperature
120
100
80
60
40
20
0
200
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
100
VGS = 0 V
VDS = 5 V
10
TJ = 125 o
C
1
TJ = 25 o
C
TJ = 125 o
C
TJ = 25 o
C
0.1
TJ = -55 o
C
TJ = -55 o
C
0.01
0.001
1.0
1.5
2.0
2.5
3.0
0.0
0.2
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 18. Transfer Characteristics
Figure 19. Source to Drain Diode
Forward Voltage vs Source Current
©2011 Fairchild Semiconductor Corporation
FDMS3610S Rev.C1
7
www.fairchildsemi.com
Typical Characteristics (Q2 N-Channel) TJ = 25°C unless otherwise noted
10000
1000
100
10
8
ID = 30 A
Ciss
VDD = 10 V
6
Coss
VDD = 13 V
VDD = 15 V
4
Crss
2
f = 1 MHz
VGS = 0 V
10
0
0.1
1
10
30
0
10
20
30
40
50
60
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 21. Capacitance vs Drain
to Source Voltage
Figure 20. Gate Charge Characteristics
100
150
120
90
60
30
0
VGS = 10 V
TJ = 25 oC
TJ = 100 oC
VGS = 4.5 V
10
TJ = 125 o
C
Limited by Package
RθJC = 2.2 oC/W
1
0.001
0.01
0.1
1
10
100
1000
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE (ms)
Figure 22. Unclamped Inductive
Switching Capability
Figure 23. Maximum Continuous Drain
Current vs Case Temperature
200
100
3000
100 μs
SINGLE PULSE
θJA = 120 oC/W
1000
100
10
R
10
1
1 ms
THIS AREA IS
10 ms
LIMITED BY r
DS(on)
100 ms
SINGLE PULSE
TJ = MAX RATED
RθJA = 120 oC/W
1s
10s
0.1
DC
T
A = 25 oC
1
0.01
0.5
0.01
0.1
1
10
100
10-4
10-3
10-2
t, PULSE WIDTH (sec)
10-1
1
10
100 1000
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 24. Forward Bias Safe
Operating Area
Figure 25. Single Pulse Maximum Power
Dissipation
©2011 Fairchild Semiconductor Corporation
FDMS3610S Rev.C1
8
www.fairchildsemi.com
Typical Characteristics (Q2 N-Channel) TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.1
P
0.05
0.02
DM
0.01
0.001
0.01
t
1
t
SINGLE PULSE
RθJA = 120 oC/W
(Note 1b)
2
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
J
x Z
x R
+ T
θJA A
DM
θJA
0.0001
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 26. Junction-to-Ambient Transient Thermal Response Curve
©2011 Fairchild Semiconductor Corporation
FDMS3610S Rev.C1
9
www.fairchildsemi.com
Typical Characteristics (continued)
SyncFET Schottky body diode
Characteristics
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with
a MOSFET. Figure 27 shows the reverse recovery
characteristic of the FDMS3610S.
10-2
35
30
25
20
15
10
5
TJ = 125 o
C
10-3
10-4
10-5
10-6
TJ = 100 o
C
di/dt = 300 A/μs
TJ = 25 o
C
0
-5
0
40 80 120 160 200 240 280 320 360
TIME (ns)
0
5
10
15
20
25
VDS, REVERSE VOLTAGE (V)
Figure 27. FDMS3610S SyncFET body
diode reverse recovery characteristic
Figure 28. SyncFET body diode reverse
leakage versus drain-source voltage
©2011 Fairchild Semiconductor Corporation
FDMS3610S Rev.C1
10
www.fairchildsemi.com
4.00
C
L
5.10
4.90
0.10 C
A
1.27 TYP
0.65 TYP
(2X)
PKG
B
C
L
8
5
8
6
7
5
0.63
2.15
2.52
1.60
KEEP OUT AREA
6.25
5.90
C
PKG
C
L
0.00
L
4.16
1.21
2.13
2.31
3.15
1
4
0.10 C
(2X)
2
4
1
3
PIN # 1
INDICATOR
0.63
0.59
TOP VIEW
3.18
5.10
SEE
DETAIL A
RECOMMENDED LAND PATTERN
FOR SAWN / PUNCHED TYPE
SIDE VIEW
0.10
0.05
C A B
C
0.10 C
3.16
2.80
0.65
0.38
0.70
0.36
8X
0.45
0.25
(6X)
0.08 C
1.34
1.12
C
0.05
0.00
1
2
3
0.35
0.15
4
1.10
0.90
SEATING
PLANE
0.66±.05
(SCALE: 2X)
2.25
2.05
4.08
3.70
1.02
0.82
0.65
0.38
8
7
6
5
0.44
0.24
0.61
0.31 (8X)
1.27
3.81
BOTTOM VIEW
5.10
4.90
0.10 C
(2X)
SEE
0.35
0.15
PKG
DETAIL B
C
L
5
8
0.28
0.08
10°
6.25
5.90
5.90
5.70
PKG
C
L
(SCALE: 2X)
0.10 C
1
4
(2X)
0.41
0.21
(8X)
TOP VIEW
5.00
4.80
SEE
0.10 C
0.08 C
DETAIL C
0.35
0.15
8X
C
SIDE VIEW
SEATING
PLANE
1.10
0.90
(SCALE: 2X)
0.10
0.05
C A B
3.16
2.80
0.70
0.36
0.65
0.38
C
0.45
0.25
(6X)
1
2
3
1.34
1.12
4
NOTES: UNLESS OTHERWISE SPECIFIED
A) PACKAGE STANDARD REFERENCE:
0.66±.05
JEDEC REGISTRATION, MO-240, VARIATION AA.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE BURRS OR
MOLD FLASH. MOLD FLASH OR BURRS DOES
NOT EXCEED 0.10MM.
2.25
2.05
4.08
3.70
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M-1994.
E) IT IS RECOMMENDED TO HAVE NO TRACES
OR VIAS WITHIN THE KEEP OUT AREA.
F) DRAWING FILE NAME: PQFN08EREV6.
G) FAIRCHILD SEMICONDUCTOR
1.02
0.82
0.65
0.38
6
8
7
5
0.61
0.44
0.24
(8X)
0.31
1.27
3.81
BOTTOM VIEW
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