FDMS7656AS [ONSEMI]
30V N沟道PowerTrench® SyncFET™;
| 型号： | FDMS7656AS |
| 厂家： | 
ONSEMI |
| 描述： | 30V N沟道PowerTrench® SyncFET™ 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总9页 (文件大小：404K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
October 2014
FDMS7656AS
N-Channel PowerTrench® SyncFET™
30 V, 49 A, 1.8 mΩ
Features
General Description
The FDMS7656AS has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance. This
device has the added benefit of an efficient monolithic Schottky
body diode.
Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A
Max rDS(on) = 1.9 mΩ at VGS = 7 V, ID = 27 A
Advanced Package and Silicon combination for low rDS(on)
and high efficiency
SyncFET Schottky Body Diode
MSL1 robust package design
100% UIL tested
Applications
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/ GPU low side switch
Networking Point of Load low side switch
Telecom secondary side rectification
RoHS Compliant
Bottom
Top
Pin 1
D
D
D
G
S
S
S
5
6
7
8
4
3
2
1
S
S
S
G
D
D
D
D
D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
30
±20
V
V
(Note 4)
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
TC = 25 °C
C = 25 °C
49
T
194
ID
A
TA = 25 °C
(Note 1a)
31
-Pulsed
180
dv/dt
EAS
MOSFET dv/dt
1.3
V/ns
mJ
Single Pulse Avalanche Energy
Power Dissipation
(Note 3)
242
TC = 25 °C
TA = 25 °C
96
PD
W
Power Dissipation
(Note 1a)
2.5
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
1.3
50
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13 ’’
Tape Width
12 mm
Quantity
FDMS7656AS
FDMS7656AS
Power 56
3000 units
©2011 Fairchild Semiconductor Corporation
FDMS7656AS Rev.C2
www.fairchildsemi.com
1
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 1 mA, VGS = 0 V
D = 10 mA, referenced to 25 °C
VDS = 24 V, VGS = 0 V
30
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
I
19
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
500
100
μA
Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 1 mA
D = 10 mA, referenced to 25 °C
VGS = 10 V, ID = 30 A
GS = 7 V, ID = 27 A
1.2
1.6
-5
3.0
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
I
mV/°C
1.3
1.5
1.6
1.8
161
1.8
1.9
2.0
2.5
V
rDS(on)
Static Drain to Source On Resistance
Forward Transconductance
mΩ
VGS = 4.5 V, ID = 25 A
VGS = 10 V, ID = 30 A, TJ = 125 °C
VDS = 5 V, ID = 30 A
gFS
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
6545
2465
210
8705
3280
315
pF
pF
pF
Ω
VDS = 15 V, VGS = 0 V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
0.5
1.1
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
22
12
35
21
ns
ns
VDD = 15 V, ID = 30 A,
V
GS = 10 V, RGEN = 6 Ω
Turn-Off Delay Time
Fall Time
50
80
ns
7
13
ns
Qg
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V
95
133
60
nC
nC
nC
nC
Qg
43
VDD = 15 V,
D = 30 A
I
Qgs
Qgd
18.2
9.1
Drain-Source Diode Characteristics
V
GS = 0 V, IS = 2 A
(Note 2)
(Note 2)
0.37
0.74
50
0.7
1.2
81
VSD
Source to Drain Diode Forward Voltage
V
VGS = 0 V, IS = 30 A
trr
Reverse Recovery Time
ns
IF = 30 A, di/dt = 300 A/μs
Qrr
Reverse Recovery Charge
84
136
nC
Notes:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R is determined by
θCA
θJA
θJC
the user's board design.
a. 50 °C/W when mounted on a
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2
1 in pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. E of 242 mJ is based on starting T = 25 °C, L = 1 mH, I = 22 A, V = 27 V, V = 10 V. 100% test at L = 0.3 mH, I = 34 A.
AS
J
AS
DD
GS
AS
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
FDMS7656AS Rev.C2
www.fairchildsemi.com
2
Typical Characteristics TJ = 25 °C unless otherwise noted
180
6
5
4
3
2
1
0
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 10 V
150
VGS = 4.5 V
VGS = 3 V
VGS = 4 V
120
VGS = 3.5 V
VGS = 3 V
90
VGS = 3.5 V
60
VGS = 4 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
30
VGS = 10 V
150 180
VGS = 4.5 V
0
0.0
0.5
1.0
1.5
2.0
0
30
60
90
120
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
1.5
6
4
2
0
ID = 30 A
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
VGS = 10 V
PULSE DURATION = 80 μs
ID = 30 A
DUTY CYCLE = 0.5% MAX
TJ = 125 o
C
TJ = 25 o
C
-75 -50 -25
0
25 50 75 100 125 150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
180
200
100
PULSE DURATION = 80 μs
VGS = 0 V
DUTY CYCLE = 0.5% MAX
150
VDS = 5 V
10
1
TJ = 125 o
C
120
TJ = 125 o
C
90
60
30
0
TJ = 25 o
C
TJ = 25 o
C
0.1
TJ = -55 o
C
TJ = -55 o
C
0.01
0.001
1
2
3
4
0.0
0.2
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
www.fairchildsemi.com
FDMS7656AS Rev.C2
3
Typical Characteristics TJ = 25 °C unless otherwise noted
10
10000
1000
100
ID = 30 A
8
Ciss
VDD = 10 V
VDD = 20 V
Coss
6
4
2
0
VDD = 15 V
f = 1 MHz
= 0 V
Crss
V
GS
30
0
20
40
60
80
100
0.1
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE (nC)
g
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
50
200
150
100
50
TJ = 25 oC
VGS = 10 V
10
TJ = 100 oC
VGS = 4.5 V
TJ = 125 o
C
Limited by Package
R
θJC = 1.3 oC/W
0
25
1
0.01
0.1
1
10
100
1000
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE (ms)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10. Maximum Continuous Drain
Current vs Case Temperature
1000
100
10
200
100
VGS = 10 V
10
1
1 ms
10 ms
THIS AREA IS
LIMITED BY rDS(on)
100 ms
1 s
SINGLE PULSE
TJ = MAX RATED
RθJA = 125 oC/W
TC = 25 oC
SINGLE PULSE
0.1
0.01
R
θJA = 125 oC/W
10 s
DC
T
C = 25 oC
1
0.5
10-3
10-2
10-1
t, PULSE WIDTH (sec)
1
10
100
1000
200
0.01
0.1
1
10
100
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
Figure12. Single Pulse Maximum
Power Dissipation
www.fairchildsemi.com
FDMS7656AS Rev.C2
4
Typical Characteristics TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.1
0.02
0.01
P
DM
t
1
0.01
t
2
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
1
2
+ T
R
θJA = 125 oC/W
PEAK T = P
J
x Z
x R
DM
θJA
θJA A
0.001
10-3
10-2
10-1
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
www.fairchildsemi.com
FDMS7656AS Rev.C2
5
Typical Characteristics (continued)
SyncFET Schottky body diode
Characteristics
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MoSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverses recovery
characteristic of the FDMS7656AS.
10-2
30
30
TJ = 125 o
C
25
TJ = 100 o
C
di/dt = 300 A/μs
10-3
10-4
10-5
20
15
10
5
TJ = 25 o
C
0
-5
0
50
100
150
200
250
0
5
10
15
20
25
30
TIME (ns)
VDS, REVERSE VOLTAGE (V)
Figure 14. FDMS7656AS SyncFET body
diode reverse recovery characteristic
Figure 15. SyncFET body diode reverses
leakage versus drain-source voltage
www.fairchildsemi.com
FDMS7656AS Rev.C2
6
PQFN8 5X6, 1.27P
CASE 483AE
ISSUE A
5.10
3.91
5.10
PKG
A
SEE
DETAIL B
1.27
6.61
C
L
B
8
7
6
5
8
5
0.77
4.52
3.75
5.85
5.65
C
PKG
6.15
L
KEEP OUT
AREA
1.27
1
4
1
2
3
4
TOP VIEW
0.61
1.27
3.81
LAND PATTERN
RECOMMENDATION
OPTIONAL DRAFT
ANGLE MAY APPEAR
ON FOUR SIDES
SEE
DETAIL C
5.00
4.80
OF THE PACKAGE
0.35
0.15
ꢀꢁꢂꢃ
0.10 C
0.30
0.05
0.05
0.00
SIDE VIEW
ꢀꢁꢂꢃ
8X
0.08 C
C
0.35
0.15
5.20
4.80
1.10
0.90
SEATING
PLANE
DETAIL C
DETAIL B
SCALE: 2:1
3.81
SCALE: 2:1
1.27
0.51
(8X)
0.31
NOTES: UNLESS OTHERWISE SPECIFIED
(0.34)
A. PACKAGE STANDARD REFERENCE: JEDEC MO-240,
ISSUE A, VAR. AA,.
0.10
C A B
1
2
3
4
B. DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH.
MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
0.76
0.51
(0.52)
D. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-2009.
E. IT IS RECOMMENDED TO HAVE NO TRACES OR
VIAS WITHIN THE KEEP OUT AREA.
6.25
5.90
+0.30
3.48
-0.10
(0.50)
(0.30)
(2X)
8
7
6
5
ꢀꢄꢅꢅꢀꢄꢂꢀ
+0.10
-0.15
0.20
(8X)
3.96
3.61
BOTTOM VIEW
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC
www.onsemi.com
相关型号：
FDMS7660
25A, 30V, 0.0028ohm, N-CHANNEL, Si, POWER, MOSFET, MO-240AA, ROHS COMPLIANT, POWER 56, 8 PIN
ROCHESTER
©2020 ICPDF网 联系我们和版权申明