FDMS7698 [ONSEMI]
N 沟道 PowerTrench® MOSFET 30V，22A，10mΩ;
| 型号： | FDMS7698 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道 PowerTrench® MOSFET 30V，22A，10mΩ 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：388K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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October 2014
FDMS7698
N-Channel PowerTrench® MOSFET
30 V, 22 A, 10 mΩ
Features
General Description
Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 13.5 A
Max rDS(on) = 15 mΩ at VGS = 4.5 V, ID = 11.0 A
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge, low rDS(on), fast switching speed and body
diode reverse recovery performance.
Advanced Package and Silicon combination for low rDS(on)
and high efficiency
Next generation enhanced body diode technology,
engineered for soft recovery
Applications
MSL1 robust package design
100% UIL tested
IMVP Vcore Switching for Notebook
VRM Vcore Switching for Desktop and server
OringFET / Load Switching
RoHS Compliant
DC-DC Conversion
Top
Bottom
Pin 1
S
G
S
S
S
D
D
D
D
5
6
7
8
4
3
S
S
G
2
1
D
D
D
D
Power 56
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
30
V
V
(Note 4)
±20
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
TC = 25 °C
TC = 25 °C
TA = 25 °C
22
44
ID
A
(Note 1a)
(Note 3)
(Note 1a)
13.5
-Pulsed
50
EAS
Single Pulse Avalanche Energy
Power Dissipation
29
29
mJ
W
TC = 25 °C
TA = 25 °C
PD
Power Dissipation
2.5
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
4.4
50
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13 ’’
Tape Width
12 mm
Quantity
FDMS7698
FDMS7698
Power 56
3000 units
1
©2011 Fairchild Semiconductor Corporation
FDMS7698 Rev.C2
www.fairchildsemi.com
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
30
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
I
D = 250 μA, referenced to 25 °C
16
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
1
μA
Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V
100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
D = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 13.5 A
GS = 4.5 V, ID = 11.0 A
1.0
2.0
-6
3.0
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
I
mV/°C
8.1
10
15
V
12.2
rDS(on)
Static Drain to Source On Resistance
Forward Transconductance
mΩ
VGS = 10 V, ID = 13.5 A
TJ = 125 °C
11
53
14
gFS
VDS = 5 V, ID = 13.5 A
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
1205
370
35
1605
495
55
pF
pF
pF
Ω
VDS = 15 V, VGS = 0 V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
0.3
1.6
3.2
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
9
3
18
10
36
10
24
12
ns
ns
VDD = 15 V, ID = 13.5 A,
V
GS = 10 V, RGEN = 6 Ω
Turn-Off Delay Time
Fall Time
20
3
ns
ns
Qg
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V
17
7.5
3.9
2.0
nC
nC
nC
nC
Qg
VDD = 15 V,
D = 13.5 A
I
Qgs
Qgd
Drain-Source Diode Characteristics
V
GS = 0 V, IS = 2.1 A
(Note 2)
(Note 2)
0.75
0.86
24
1.1
1.2
38
15
34
24
VSD
Source to Drain Diode Forward Voltage
V
VGS = 0 V, IS = 13.5 A
trr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
ns
nC
ns
IF = 13.5 A, di/dt = 100 A/μs
IF = 13.5 A, di/dt = 300 A/μs
Qrr
trr
8
19
Qrr
13
nC
Notes:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R is determined by
θCA
θJA
θJC
the user's board design.
b) 125 °C/W when mounted
on a minimum pad of 2 oz copper.
a) 50 °C/W when mounted on a
1 in pad of 2 oz copper
2
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. E of 29 mJ is based on starting T = 25 °C, L = 0.3 mH, I = 14 A, V = 27 V, V = 10 V.
AS
J
AS
DD
GS
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
©2011 Fairchild Semiconductor Corporation
FDMS7698 Rev.C2
2
www.fairchildsemi.com
Typical Characteristics TJ = 25 °C unless otherwise noted
50
5
4
3
2
1
0
V
= 10 V
GS
= 6 V
VGS = 3.5 V
V
VGS = 4 V
GS
40
30
20
10
0
V
= 4.5 V
GS
V
= 4 V
GS
VGS = 4.5 V
VGS = 6 V
V
= 3.5 V
GS
VGS = 10 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0.0
0.5
1.0
1.5
2.0
2.5
0
10
20
30
40
50
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
1.6
30
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
ID = 13.5 A
ID = 13.5 A
VGS = 10 V
1.4
25
20
15
10
5
1.2
1.0
0.8
0.6
TJ = 125 o
C
TJ = 25 o
C
-75 -50 -25
0
25 50 75 100 125 150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
F i gu re 3 . N orma li zed On - Res is ta nc e
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
50
50
VGS = 0 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
40
30
20
10
0
10
1
VDS = 5 V
TJ = 150 o
C
TJ = 25 oC
TJ = 150 o
C
TJ = 25 o
C
TJ = -55 o
C
TJ = -55 o
C
0.1
1
2
3
4
5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
©2011 Fairchild Semiconductor Corporation
FDMS7698 Rev.C2
3
www.fairchildsemi.com
Typical Characteristics TJ = 25 °C unless otherwise noted
2000
1000
10
ID = 13.5 A
VDD = 10 V
Ciss
8
6
4
2
0
VDD =15 V
Coss
VDD = 20 V
100
Crss
f = 1 MHz
GS = 0 V
V
10
0.1
1
10
30
0
3
6
9
12
15
18
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
25
50
40
30
20
10
0
RθJC = 4.4 oC/W
20
15
10
VGS = 10 V
TJ = 25 oC
VGS = 4.5 V
TJ = 125 o
C
TJ = 100 oC
Limited by Package
5
1
0.01
0.1
1
10
40
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE (ms)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10. Maximum Continuous Drain
Current vs Case Temperature
100
10
1000
SINGLE PULSE
θJA = 125 oC/W
A = 25 oC
R
100 us
1 ms
T
100
10
THIS AREA IS
10 ms
100 ms
1
LIMITED BY r
DS(on)
1 s
SINGLE PULSE
TJ = MAX RATED
0.1
10 s
DC
R
θJA = 125 oC/W
A = 25 oC
1
T
0.01
0.01
0.5
10-4
10-3
10-2
t, PULSE WIDTH (sec)
10-1
1
10
100 1000
0.1
1
10
100200
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
Figure 12. Single Pulse Maximum
Power Dissipation
©2011 Fairchild Semiconductor Corporation
FDMS7698 Rev.C2
4
www.fairchildsemi.com
Typical Characteristics TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.1
P
DM
0.02
0.01
t
1
t
2
0.01
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
1
2
R
θJA = 125 oC/W
PEAK T = P
J
x Z
x R
+ T
DM
θJA
θJA A
0.001
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
©2011 Fairchild Semiconductor Corporation
FDMS7698 Rev.C2
5
www.fairchildsemi.com
PQFN8 5X6, 1.27P
CASE 483AE
ISSUE A
5.10
3.91
5.10
PKG
A
SEE
DETAIL B
1.27
6.61
C
L
B
8
7
6
5
8
5
0.77
4.52
3.75
5.85
5.65
C
PKG
6.15
L
KEEP OUT
AREA
1.27
1
4
1
2
3
4
TOP VIEW
0.61
1.27
3.81
LAND PATTERN
RECOMMENDATION
OPTIONAL DRAFT
ANGLE MAY APPEAR
ON FOUR SIDES
SEE
DETAIL C
5.00
4.80
OF THE PACKAGE
0.35
0.15
ꢀꢁꢂꢃ
0.10 C
0.30
0.05
0.05
0.00
SIDE VIEW
ꢀꢁꢂꢃ
8X
0.08 C
C
0.35
0.15
5.20
4.80
1.10
0.90
SEATING
PLANE
DETAIL C
DETAIL B
SCALE: 2:1
3.81
SCALE: 2:1
1.27
0.51
(8X)
0.31
NOTES: UNLESS OTHERWISE SPECIFIED
(0.34)
A. PACKAGE STANDARD REFERENCE: JEDEC MO-240,
ISSUE A, VAR. AA,.
0.10
C A B
1
2
3
4
B. DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH.
MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
0.76
0.51
(0.52)
D. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-2009.
E. IT IS RECOMMENDED TO HAVE NO TRACES OR
VIAS WITHIN THE KEEP OUT AREA.
6.25
5.90
+0.30
3.48
-0.10
(0.50)
(0.30)
(2X)
8
7
6
5
ꢀꢄꢅꢅꢀꢄꢂꢀ
+0.10
-0.15
0.20
(8X)
3.96
3.61
BOTTOM VIEW
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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