FDMS8320LDC [ONSEMI]
N 沟道双 CoolTM 56 Power Trench® MOSFET 40V，192A，1.1mΩ;
| 型号： | FDMS8320LDC |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道双 CoolTM 56 Power Trench® MOSFET 40V，192A，1.1mΩ 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：383K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – N-Channel,
DUALꢀCOOL) DFN8,
POWERTRENCH)
40 V, 192 A, 1.1 mW
D
D
D
Pin 1
D
S
G
S
S
Pin 1
S
Top
Bottom
DFN8
DUAL COOL
CASE 506EG
FDMS8320LDC
Features
• Max R
• Max R
= 1.1 mꢀ at V = 10 V, I = 44 A
GS D
DS(on)
MARKING DIAGRAM
= 1.5 mꢀ at V = 4.5 V, I = 37 A
DS(on)
GS
D
2GAYWZ
• Advanced Package and Silicon Combination for Low R
and
DS(on)
High Efficiency
• Next Generation Enhanced Body Diode Technology, Engineered for
Soft Recovery
• MSL1 Robust Package Design
• 100% UIL Tested
2G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Assembly Lot Code
• This Device is Pb−Free, Halogen Free and RoHS Compliant
A
Y
W
Z
Applications
• OringFET/Load Switching
• Synchronous Rectification
• DC−DC Conversion
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
S
S
S
G
1
2
3
4
8
7
6
5
D
D
D
D
Symbol
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Drain Current
Ratings
40
Unit
V
V
DSS
V
GS
20
V
I
D
A
− Continuous T = 25°C
192
44
300
C
− Continuous T = 25°C (Note 1a)
A
− Pulsed (Note 4)
E
AS
Single Pulse Avalanche Energy
(Note 3)
661
mJ
W
P
D
Power Dissipation, T = 25°C
125
3.2
C
Power Dissipation, T = 25°C
A
ORDERING INFORMATION
(Note 1a)
See detailed ordering and shipping information on page 6 of
this data sheet.
T , T
Operating and Storage Junction
Temperature Range
−55 to +150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
February, 2023 − Rev. 4
FDMS8320LDC/D
FDMS8320LDC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BV
Drain−to−Source Breakdown
I
I
= 250 ꢁ A, V = 0 V
40
−
−
−
V
DSS
D
GS
Voltage
ꢂ BV
/ꢂ T
Breakdown Voltage Temperature
Coefficient
= 250 ꢁ A, referenced to 25°C
−
22
mV/°C
DSS
J
D
I
Zero Gate Voltage Drain Corrent
V
V
= 32 V, V = 0 V
−
−
−
−
1
ꢁ A
DSS
DS
GS
I
Gate−to−Source Leakage Current
=
20 V, V = 0 V
100
nA
GSS
GS
DS
ON CHARACTERISTICS
V
Gate−to−Source Threshold Voltage
V
I
= V , I = 250 ꢁ A
1.0
1.6
3.0
V
GS(th)
GS
DS
D
ꢂ
V
/ꢂ T
Gate−to−Source Threshold Voltage
Temperature Coefficient
= 250 ꢁ A, referenced to 25°C
−
−6
−
mV/°C
GS(th)
J
D
R
Static Drain−to−Source On
V
GS
V
GS
V
GS
V
DS
= 10 V, I = 44 A
−
−
−
−
0.8
1.1
1.2
244
1.1
1.5
1.7
−
mꢀ
DS(on)
D
Resistance
= 4.5 V, I = 37 A
D
= 10 V, I = 44 A, T = 125°C
D
J
g
FS
Forward Transconductance
= 5 V, I = 44 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 20 V, V = 0 V, f = 1 MHz
−
−
8310
2255
132
11635
3160
185
pF
pF
pF
ꢀ
iss
DS
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
−
rss
R
f = 1 MHz
0.1
1.4
2.6
g
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Rise Time
V
V
= 20 V, I = 44 A,
−
−
−
−
−
−
−
−
19
15
69
14
121
57
21
16
34
27
110
25
170
80
−
ns
ns
d(on)
DD
GS
D
= 10 V, R
= 6 ꢀ
GEN
t
r
t
Turn−Off Delay Time
Fall Time
ns
d(off)
t
f
ns
Q
Q
Total Gate Charge
Total Gate Charge
Gate−to−Source Charge
Gate−to−Drain “Miller” Charge
V
GS
V
GS
V
DD
V
DD
= 0 to 10 V, V = 20 V, I = 44 A
nC
nC
nC
nC
g(ToT)
g(ToT)
DD
D
= 0 to 4.5 V, V = 20 V, I = 44 A
DD
D
Q
Q
= 20 V, I = 44 A
D
gs
gd
= 20 V, I = 44 A
−
D
DRAIN−SOURCE DIODE CHARACTERISTIC
V
Source−to−Drain Diode Forward
V
V
= 0 V, I = 2.6 A (Note 2)
−
−
−
−
−
−
0.7
0.8
65
57
49
89
1.1
1.2
104
91
V
V
SD
GS
S
Voltage
= 0 V, I = 44 A (Note 2)
GS
S
t
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
I = 44 A, di/dt = 100 A/ꢁ s
F
ns
nC
ns
nC
rr
Q
rr
t
I = 44 A, di/dt = 300 A/ꢁ s
F
79
rr
Q
143
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
FDMS8320LDC
THERMAL CHARACTERISTICS
Symbol
Characteristic
Value
2.9
1.0
38
Unit
R
θ
JC
R
θ
JC
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JA
Thermal Resistance, Junction to Case (Top Source)
Thermal Resistance, Junction to Case (Bottom Drain)
Thermal Resistance, Junction to Ambient (Note 1a)
Thermal Resistance, Junction to Ambient (Note 1b)
Thermal Resistance, Junction to Ambient (Note 1c)
Thermal Resistance, Junction to Ambient (Note 1d)
Thermal Resistance, Junction to Ambient (Note 1e)
Thermal Resistance, Junction to Ambient (Note 1f)
Thermal Resistance, Junction to Ambient (Note 1g)
Thermal Resistance, Junction to Ambient (Note 1h)
Thermal Resistance, Junction to Ambient (Note 1i)
Thermal Resistance, Junction to Ambient (Note 1j)
Thermal Resistance, Junction to Ambient (Note 1k)
Thermal Resistance, Junction to Ambient (Note 1l)
°C/W
81
27
34
16
19
26
61
16
23
11
13
NOTES:
1. R
is determined with the device mounted on a FR−4 board using a specified pad of 2 oz copper as shown below. R
is guaranteed by
ꢃ
ꢃ
JC
JA
design while R
is determined by the user’s board design.
ꢃ
CA
a. 38°C/W when mounted on
b. 81°C/W when mounted on
a minimum pad of 2 oz copper
2
a 1 in pad of 2 oz copper
2
c. Still air, 20.9 × 10.4 × 12.7 mm Aluminum Heat Sink, 1 in pad of 2 oz copper
d. Still air, 20.9 × 10.4 × 12.7 mm Aluminum Heat Sink, minimum pad of 2 oz copper
2
e. Still air, 45.2 × 41.4 × 11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, 1 in pad of 2 oz copper
f. Still air, 45.2 × 41.4 × 11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, minimum pad of 2 oz copper
2
g. 200FPM Airflow, No Heat Sink,1 in pad of 2 oz copper
h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper
i. 200FPM Airflow, 20.9 × 10.4 × 12.7 mm Aluminum Heat Sink, 1 in pad of 2 oz copper
2
j. 200FPM Airflow, 20.9 × 10.4 × 12.7 mm Aluminum Heat Sink, minimum pad of 2 oz copper
k. 200FPM Airflow, 45.2 × 41.4 × 11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, 1 in pad of 2 oz copper
2
l. 200FPM Airflow, 45.2 × 41.4 × 11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 ꢁ s, Duty cycle < 2.0%.
3. E of 661 mJ is based on starting T = 25°C; N−ch: L = 3 mH, I = 21 A, V = 40 V, V = 10 V. 100% test at L = 0.1 mH, I = 66 A.
AS
J
AS
DD
GS
AS
4. Pulse Id measured at 250 ꢁ s, refer to Figure 11 SOA graph for more details.
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3
FDMS8320LDC
TYPICAL CHARACTERISTICS
(T = 25°C UNLESS OTHERWISE NOTED)
J
7
6
5
300
240
180
120
60
V
= 10 V
Pulse Duration = 80 ꢁ s
Duty Cycle = 0.5% Max
GS
V
= 4.5 V
GS
V
= 3 V
GS
4
3
2
1
0
V
= 4 V
GS
V
GS
= 3.5 V
V
V
GS
= 3 V
V
GS
= 3.5 V
= 4 V
GS
Pulse Duration = 80 ꢁ s
Duty Cycle = 0.5% Max
V
= 10 V
GS
V
GS
= 4.5 V
0
0
1
2
3
4
5
0
60
120
180
240
300
V
DS
, Drain−to−Source Voltage (V)
I , Drain Current (A)
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs.
Drain Current and Gate Voltage
1.7
1.6
1.5
5
4
3
2
1
0
Pulse Duration = 80 ꢁ s
Duty Cycle = 0.5% Max
I
V
= 44 A
DS
= 10 V
GS
I
D
= 44 A
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
T = 125°C
J
T = 25°C
J
0
−75 −50 −25
25 50 75 100 125 150
2
4
6
8
10
T , Junction Temperature (5C)
J
V
GS
, Gate−to−Source Voltage (V)
Figure 3. Normalized On−Resistance vs.
Figure 4. On−Resistance vs. Gate−to−Source
Junction Temperature
Voltage
300
100
300
240
Pulse Duration = 80 ꢁ s
Duty Cycle = 0.5% Max
V
GS
= 0 V
10
1
V
DS
= 5 V
T = 150°C
J
180
120
T = 25°C
J
T = 150°C
J
T = 25°C
J
0.1
0.01
T = −55°C
J
60
0
T = −55°C
J
0.001
1
2
3
4
5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, Gate−to Source Voltage (V)
V
SD
, Body Diode Forward Voltage (V)
Figure 5. Transfer Characteristics
Figure 6. Source−to−Drain Diode Forward
Voltage vs. Source Current
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4
FDMS8320LDC
TYPICAL CHARACTERISTICS (CONTINUED)
(T = 25°C UNLESS OTHERWISE NOTED)
J
10000
1000
10
8
I
D
= 44 A
C
C
iss
V
DD
= 15 V
oss
6
V
DD
= 20 V
4
100
10
V
= 25 V
DD
C
rss
2
f = 1 MHz
= 0 V
V
GS
0
0
26
52
78
104
130
0.1
1
10
, Drain−to−Source Voltage (V)
DS
40
Q , Gate Charge (nC)
g
V
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs.
Drain−to−Source Voltage
100
10
1
300
240
180
120
60
R
= 1.0°C/W
ꢃ
JC
T = 25°C
J
T = 100°C
J
V
GS
= 10 V
Limited by Package
V
= 4.5 V
GS
T = 125°C
J
0
0.01
0.1
1
10
100
1000
25
50
75
100
125
150
t
, Time in Avalanche (ms)
AV
T , Case Temperature (5C)
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
20000
10000
2000
Single Pulse
1000
100
10
R
= 1.0°C/W
ꢃ
JC
T
C
= 25°C
10 ꢁ s
This Area is
Limited by
1000
100
10
100 ꢁ s
R
DS(on)
Single Pulse
T = Max Rated
1 ms
J
10 ms
DC
R
= 1.0°C/W
= 25°C
ꢃ
JC
1
T
C
Curve Bent to Measured Data
0.1
−5
−4
−3
−2
−1
0.1
1
10
100 200
10
10
10
10
10
1
V
DS
, Drain−to−Source Voltage (V)
t, Pulse Width (s)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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5
FDMS8320LDC
TYPICAL CHARACTERISTICS (CONTINUED)
(T = 25°C UNLESS OTHERWISE NOTED)
J
2
1
Duty Cycle−Descending Order
D = 0.5
0.2
0.1
PDM
0.05
0.02
0.01
0.1
0.01
t1
t2
Notes:
Single Pulse
Z
ꢃ
(t) = r(t) × R
= 1.0°C/W
ꢃ
JC
JC
R
ꢃ
JC
Peak T = P
× Z (t) + T
ꢃ
JC
J
DM
C
Duty Cycle, D = t / t
1
2
0.001
−5
−4
−3
−2
−1
10
10
10
10
10
1
t, Rectangular Pulse Duration (s)
Figure 13. Junction−to−Case Transient Thermal Response Curve
PACKAGE MARKING AND ORDERING INFOMRATION
PACKAGE MARKING AND ORDERING INFORMATION
†
Device
Device Marking
Package
Reel Size
Tape Width
Quantity
FDMS8320LDC
2G
DUAL COOL 56
13″
12 mm
3000 Units
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
DUAL COOL and POWERTRENCH are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its
subsidiaries in the United States and/or other countries.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN8 5x6.15, 1.27P, DUAL COOL
CASE 506EG
ISSUE D
DATE 25 AUG 2020
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXX
XXXX = Specific Device Code
*This information is generic. Please refer to
A
Y
= Assembly Location
= Year
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
WW = Work Week
ZZ
= Assembly Lot Code
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON84257G
DFN8 5x6.15, 1.27P, DUAL COOL
PAGE 1 OF 1
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