FDMS8558S [ONSEMI]
N 沟道，PowerTrench® SyncFET™ MOSFET，25V，90A，1.5mΩ;
| 型号： | FDMS8558S |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® SyncFET™ MOSFET，25V，90A，1.5mΩ |
| 文件： | 总9页 (文件大小：438K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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October 2014
FDMS8558S(PCN)
N-Channel PowerTrench® SyncFETTM
25 V, 90 A, 1.5 mΩ
Features
General Description
Dual CoolTM PQFN package
This N-Channel SyncFETTM is produced using Fairchild
Semiconductor’s
advanced
PowerTrench® process.
Max rDS(on) = 1.5 mΩ at VGS = 10 V, ID = 33 A
Max rDS(on) = 1.7 mΩ at VGS = 4.5 V, ID = 31 A
High performance technology for extremely low rDS(on)
SyncFETTM Schottky Body Diode
RoHS Compliant
Advancements in both silicon and package technologies have
been combined to offer the lowest rDS(on) while maintaining
excellent switching performance by extremely low Junction-to-
Ambient thermal resistance. This device has the added benefit
of an efficient monolithic Schottky body diode.
Applications
Synchronous Rectifier for DC/DC Converters
Telecom Secondary Side Rectification
High End Server/Workstation Vcore Low Side
Bottom
Top
Pin 1
D
D
D
G
5
6
7
8
4
3
2
1
S
S
S
G
S
S
S
D
D
D
D
D
Power 56
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
25
V
V
12
90
Drain Current -Continuous (Package limited)
-Continuous
TC = 25 °C
TA = 25 °C
ID
(Note 1a)
(Note 3)
33
A
-Pulsed
140
EAS
Single Pulse Avalanche Energy
Power Dissipation
145
mJ
W
TC = 25 °C
TA = 25 °C
78
PD
Power Dissipation
(Note 1a)
2.5
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
TC = 25 °C
TA = 25 °C
1.6
50
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13’’
Tape Width
12 mm
Quantity
09OD
FDMS8558S
Power 56
3000 units
©2012 Fairchild Semiconductor Corporation
FDMS8558S Rev.PCN2
1
www.fairchildsemi.com
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 1 mA, VGS = 0 V
25
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 10 mA, referenced to 25 °C
24
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = 20 V, VGS = 0 V
500
μA
VGS = +12 V/-8 V, VDS = 0 V
±100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 1 mA
1.1
1.4
-3
2.2
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
I
D = 10 mA, referenced to 25 °C
GS = 10 V, ID = 33 A
mV/°C
V
1.1
1.3
1.6
317
1.5
1.7
2.1
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
VGS = 4.5 V, ID = 31 A
mΩ
VGS = 10 V, ID = 33 A, TJ = 125 °C
VDS = 5 V, ID = 33 A
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
5118
1508
195
pF
pF
pF
Ω
VDS = 13 V, VGS = 0 V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
0.9
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
14
8
ns
ns
VDD = 13 V, ID = 33 A,
V
GS = 10 V, RGEN = 6 Ω
Turn-Off Delay Time
Fall Time
51
7
ns
ns
Qg
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V
81
38
10
9.7
nC
nC
nC
nC
Qg
VDD = 13 V,
D = 33 A
I
Qgs
Qgd
Drain-Source Diode Characteristics
V
GS = 0 V, IS = 2 A
(Note 2)
(Note 2)
0.6
0.8
35
0.8
1.2
VSD
Source to Drain Diode Forward Voltage
V
VGS = 0 V, IS = 33 A
trr
Reverse Recovery Time
ns
IF = 33 A, di/dt = 300 A/μs
Qrr
Reverse Recovery Charge
49
nC
NOTES:
1. R
is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. R
is guaranteed by design while R is determined
θCA
θJA
θJC
by the user's board design.
50 °C/W when mounted on a
1 in pad of 2 oz copper
a)
125 °C/W when mounted on a
minimum pad of 2 oz copper.
b)
2
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. E of 145 mJ is based on starting T = 25 °C, L = 0.9 mH, I = 18 A, V = 23 V, V = 10 V. 100% test at L = 0.1 mH, I = 39 A.
AS
J
AS
DD
GS
AS
©2012 Fairchild Semiconductor Corporation
FDMS8558S Rev.PCN2
www.fairchildsemi.com
2
Typical Characteristics TJ = 25 °C unless otherwise noted
140
6
5
4
3
2
1
0
VGS = 10V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 4.5 V
VGS = 3.5 V
VGS = 3 V
120
100
80
60
40
20
0
VGS = 2.5 V
VGS = 2.5 V
VGS = 3 V
VGS = 3.5 V
VGS = 4.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 10 V
120
0
20
40
60
80
100
140
0
0.2
0.4
0.6
0.8
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
F i g u r e 2 . No rma li zed O n-Re si stan ce
vs Drain Current and Gate Voltage
1.6
6
ID = 38 A
GS = 10 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
V
5
ID = 38 A
4
3
TJ = 125 o
C
2
1
0
TJ = 25 o
C
-75 -50 -25
0
25 50 75 100 125 150
2
3
4
5
6
7
8
9
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
140
200
100
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 0 V
120
100
80
60
40
20
0
VDS = 5 V
TJ = 125 o
C
10
TJ = 25 oC
1
TJ = 25 o
C
TJ = 125 o
C
TJ = -55 o
C
0.1
0.01
TJ = -55 o
C
1.2
1.5
1.8
2.1
2.4
2.7
0.0
0.2
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
©2012 Fairchild Semiconductor Corporation
FDMS8558S Rev.PCN2
www.fairchildsemi.com
3
Typical Characteristics TJ = 25 °C unless otherwise noted
10
10000
1000
100
ID = 38 A
8
6
Ciss
VDD = 10 V
VDD = 13 V
Coss
4
VDD = 15 V
2
0
f = 1 MHz
GS = 0 V
V
Crss
10
0
15
30
45
60
75
90
0.1
1
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
200
150
100
50
100
VGS = 10 V
TJ = 25 oC
VGS = 4.5 V
10
TJ = 100 oC
Limited by Package
RθJC = 1.6 oC/W
TJ = 125 o
C
0
25
1
0.001
0.01
0.1
1
10
100
1000
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE (ms)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure 10. Maximum Continuous Drain
Current vs Ambient Temperature
500
100
10000
SINGLE PULSE
RθJA = 125 oC/W
TA = 25 oC
1000
100
10
100 us
10
1
1 ms
10 ms
THIS AREA IS
LIMITED BY rDS(on)
100 ms
1 s
SINGLE PULSE
TJ = MAX RATED
RθJA = 125 oC/W
TA = 25 oC
0.1
0.01
1
10 s
DC
0.1
10-4
10-3
10-2
t, PULSE WIDTH (s)
10-1
100
101
0.01
0.1
1
10
100
100 1000
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
Figure12. Single Pulse Maximum
Power Dissipation
©2012 Fairchild Semiconductor Corporation
FDMS8558S Rev.PCN2
www.fairchildsemi.com
4
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
DM
0.01
1E-3
1E-4
t
1
t
2
SINGLE PULSE
θJA = 125 oC/W
NOTES:
DUTY FACTOR: D = t /t
R
1
2
PEAK T = P
J
x Z
x R
+ T
DM
θJA
θJA A
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
100
101
100
1000
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
©2012 Fairchild Semiconductor Corporation
FDMS8558S Rev.PCN2
www.fairchildsemi.com
5
Typical Characteristics (continued)
TM
SyncFET Schottky body diode
Characteristics
Fairchild’s SyncFETTM process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
with
a MOSFET. Figure 14 shows the reverse recovery
characteristic of the FDMS8558S.
10-2
40
35
30
25
20
15
10
5
TJ = 125 o
C
10-3
10-4
10-5
10-6
TJ = 100 o
C
di/dt = 300 A/μs
TJ = 25 o
C
0
-5
700
800
900
1000
1100
0
5
10
15
20
25
TIME (ns)
VDS, REVERSE VOLTAGE (V)
Figure 15. SyncFETTM body diode reverse
leakage versus drain-source voltage
Figure 14. FDMS8558S SyncFETTM body
diode reverse recovery characteristic
©2012 Fairchild Semiconductor Corporation
FDMS8558S Rev.PCN2
www.fairchildsemi.com
6
PQFN8 5X6, 1.27P
CASE 483AE
ISSUE A
5.10
3.91
5.10
PKG
A
SEE
DETAIL B
1.27
6.61
C
L
B
8
7
6
5
8
5
0.77
4.52
3.75
5.85
5.65
C
PKG
6.15
L
KEEP OUT
AREA
1.27
1
4
1
2
3
4
TOP VIEW
0.61
1.27
3.81
LAND PATTERN
RECOMMENDATION
OPTIONAL DRAFT
ANGLE MAY APPEAR
ON FOUR SIDES
SEE
DETAIL C
5.00
4.80
OF THE PACKAGE
0.35
0.15
ꢀꢁꢂꢃ
0.10 C
0.30
0.05
0.05
0.00
SIDE VIEW
ꢀꢁꢂꢃ
8X
0.08 C
C
0.35
0.15
5.20
4.80
1.10
0.90
SEATING
PLANE
DETAIL C
DETAIL B
SCALE: 2:1
3.81
SCALE: 2:1
1.27
0.51
(8X)
0.31
NOTES: UNLESS OTHERWISE SPECIFIED
(0.34)
A. PACKAGE STANDARD REFERENCE: JEDEC MO-240,
ISSUE A, VAR. AA,.
0.10
C A B
1
2
3
4
B. DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH.
MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
0.76
0.51
(0.52)
D. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-2009.
E. IT IS RECOMMENDED TO HAVE NO TRACES OR
VIAS WITHIN THE KEEP OUT AREA.
6.25
5.90
+0.30
3.48
-0.10
(0.50)
(0.30)
(2X)
8
7
6
5
ꢀꢄꢅꢅꢀꢄꢂꢀ
+0.10
-0.15
0.20
(8X)
3.96
3.61
BOTTOM VIEW
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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