FDMS86101 [ONSEMI]
N 沟道，PowerTrench® MOSFET，100V，60A，8mΩ;
| 型号： | FDMS86101 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，100V，60A，8mΩ 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：500K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET - N‐Channel,
POWERTRENCH)
100 V, 60 A, 8 mW
FDMS86101
General Description
This N−Channel MOSFET is produced using ON Semiconductor’s
advanced POWERTRENCH process that has been especially
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®
tailored to minimize the on−state resistance and yet maintain superior
switching performance.
S
D
D
D
Features
S
S
G
• Max r
• Max r
= 8 mW at V = 10 V, I = 13 A
GS D
= 13.5 mW at V = 6 V, I = 9.5 A
DS(on)
DS(on)
GS
D
• Advanced Package and Silicon combination for low r
efficiency
and high
DS(on)
D
• MSL1 robust package design
• 100% UIL tested
N-Channel MOSFET
• 100% Rg tested
Top
Bottom
• These Devices are Pb−Free and are RoHS Compliant
D
D
Applications
D
D
• DC−DC Conversion
G
S
S
S
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Power 56
(PQFN8)
CASE 483AE
Symbol
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current:
Value
100
20
Unit
V
V
DS
GS
V
V
MARKING DIAGRAM
I
D
A
Continuous, T = 25°C
60
12.4
200
C
Continuous, T = 25°C (Note 1a)
A
Pulsed
$Y&Z&3&K
FDMS
86101
E
AS
Single Pulse Avalanche Energy
(Note 3)
173
mJ
W
P
D
Power Dissipation:
T
= 25°C
104
2.5
C
T = 25°C (Note 1a)
A
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
T , T
Operating and Storage Junction
Temperature Range
−55 to +150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
FDMS86101
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
December, 2020 − Rev. 5
FDMS86101/D
FDMS86101
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Quantity
FDMS86101
FDMS86101
Power 56 (PQFN8)
(Pb-Free / Halogen Free)
3000/Tape&Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
THERMAL CHARACTERISTICS
Symbol
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (Note 1a)
Value
1.2
Unit
°C/W
R
q
JC
R
50
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 250 mA, V = 0 V
100
V
DSS
D
GS
DBV
Breakdown Voltage Temperature
Coefficient
= 250 mA, referenced to 25°C
66
mV/°C
DSS
D
/DT
J
DSS
GSS
I
Zero Gate Voltage Drain Current
V
V
= 80 V, V = 0 V
800
100
nA
nA
DS
GS
I
Gate to Source Leakage Current, Forward
= 20 V, V = 0 V
DS
GS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = 250 mA
2.0
2.9
4.0
V
GS(th)
GS
DS
D
DV
/DT
Gate to Source Threshold Voltage
Temperature Coefficient
= 250 mA, referenced to 25°C
−9
mV/°C
GS(th)
J
D
r
Static Drain to Source On Resistance
Forward Transconductance
V
GS
V
GS
V
GS
V
DS
= 10 V, I = 13 A
6.3
8.4
10.9
45
8
mW
DS(on)
D
= 6 V, I = 9.5 A
13.5
14
D
= 10 V, I = 13 A, T = 125°C
D
J
g
FS
= 10 V, I = 13 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 50 V, V = 0 V, f = 1 MHz
2255
460
30
3000
610
45
pF
pF
pF
W
iss
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
rss
R
0.1
1.0
3.0
g
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Rise Time
V
= 50 V, I = 13 A, V = 10 V,
GEN
15
11
27
7
27
20
44
13
55
ns
ns
ns
ns
nC
d(on)
DD
D
GS
R
= 6 W
t
r
t
Turn-Off Delay Time
Fall Time
d(off)
t
f
Q
Total Gate Charge
V
= 0 V to 10 V, V = 50 V,
39
g
GS
DD
I
= 13 A
D
V
D
= 0 V to 5 V, V = 50 V,
22
31
nC
GS
DD
I
= 13 A
Q
Gate to Source Charge
V
DD
V
DD
= 40 V, I = 68 A
9.5
nC
nC
gs
D
Q
Gate to Drain “Miller” Charge
= 40 V, I = 68 A
10.8
gd
D
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2
FDMS86101
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
DRAIN-SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward Voltage
V
V
= 0 V, I = 2.1 A (Note 2)
0.7
0.8
56
1.2
1.3
90
V
SD
GS
S
= 0 V, I = 13 A (Note 2)
GS
S
t
Reverse Recovery Time
I = 13 A, di/dt = 100 A/ms
F
ns
rr
Q
Reverse Recovery Charge
61
98
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. R
is determined
CA
q
q
JA
by the user’s board design.
NOTES:
a. 50 °C/W when mounted on a
1 in pad of 2 oz copper.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. E of 173 mJ is based on starting T = 25°C, L = 0.3 mH, I = 34 A, V = 75 V, V = 10 V. 100% test at L = 0.1 mH, I = 49 A.
AS
J
AS
DD
GS
AS
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
5
200
VGS = 10 V
PULSE DURATION = 80ms
VGS = 4.5 V
DUTY CYCLE = 0.5% MAX
4
3
2
1
0
150
VGS = 6 V
VGS = 5 V
VGS = 5.5 V
VGS = 5.5 V
100
50
VGS = 5 V
VGS = 6 V
VGS = 4.5 V
VGS = 10 V
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
0
0
1
2
3
, DRAIN TO SOURCE VOLTAGE (V)
4
5
0
50
100
, DRAIN CURRENT (A)
D
150
200
I
V
DS
Figure 1. On Region Characteristics
Figure 2. Normalized On−Resistance
vs. Drain Current and Gate Voltage
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3
FDMS86101
TYPICAL CHARACTERISTICS (continued)
(T = 25°C unless otherwise noted)
J
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
40
30
20
10
0
ID = 13 A
GS = 10 V
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
ID = 13 A
V
TJ = 125oC
TJ = 25 oC
−75 −50 −25
0
25 50 75 100 125 150
4
6
8
10
T , JUNCTION TEMPERATURE (5C)
J
V , GATE TO SOURCE VOLTAGE (V)
GS
Figure 3. Normalized On Resistance
vs. Junction Temperature
Figure 4. On−Resistance vs. Gate
to Source Voltage
200
150
100
50
100
10
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
VGS = 0 V
VDS = 5 V
TJ = 150oC
1
T
J = 25 o
C
TJ = 150 o
C
0.1
TJ = 25 o
C
TJ = −55oC
TJ = −55oC
0
0.01
1
2
3
4
5
6
7
8
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
, GATE TO SOURCE VOLTAGE (V)
V
, BODY DIODE FORWARD VOLTAGE (V)
GS
SD
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs. Source Current
10000
10
ID = 13 A
VDD = 50 V
Ciss
8
VDD = 75 V
V
DD = 25 V
1000
100
10
Coss
6
4
Crss
2
0
f = 1 MHz
V
GS = 0 V
0
10
20
30
40
0.1
1
10
100
Q , GATE CHARGE (nC)
g
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain
to Source Voltage
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4
FDMS86101
TYPICAL CHARACTERISTICS (continued)
(T = 25°C unless otherwise noted)
J
90
75
60
45
100
R
qJC = 1.2 oC/W
TJ = 25 o
C
VGS = 10 V
10
TJ = 100 o
C
Limited by Package
30
15
0
= 6 V
VGS
TJ = 125 o
C
1
0.001
0.01
t
0.1
1
10
100
25
50
75
100
125
o
150
, TIME IN AVALANCHE (ms)
, CASE TEMPERATURE (
T
C)
AV
c
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
2000
1000
500
100
VGS = 10 V
SINGLE PULSE
qJA = 125oC/W
A = 25oC
R
T
10
1
100
10
1 ms
THIS AREA IS
10 ms
100 ms
LIMITED BY r
DS(on)
0.1
1 s
SINGLE PULSE
TJ = MAX RATED
10 s
DC
R
qJA = 125oC/W
0.01
1
T
A = 25oC
0.5
0.001
10−3
10−2
10−1
t, PULSE WIDTH (sec)
1
10
100
1000
0.01
0.1
V
DS
1
10
100 500
, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
Figure 12. Single Pulse Maximum
Power Dissipation
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
DM
0.01
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
qJA = 125 oC/W
1
2
0.001
R
PEAK T = P x Z
x R
+ T
qJA A
J
DM
qJA
0.0005
10−3
10−2
10−1
t, RECTANGULAR PULSE DURATION (sec)
11
0
100
1000
Figure 13. Junction−to−Ambient Transient Thermal Response Curve
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and or other
countries.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN8 5X6, 1.27P
CASE 483AE
ISSUE C
DATE 21 JAN 2022
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13655G
PQFN8 5X6, 1.27P
PAGE 1 OF 1
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相关型号：
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