FDMS86200 [ONSEMI]
N 沟道,Power Trench® MOSFET,150V,35A,18mΩ;型号: | FDMS86200 |
厂家: | ONSEMI |
描述: | N 沟道,Power Trench® MOSFET,150V,35A,18mΩ 开关 脉冲 光电二极管 晶体管 |
文件: | 总7页 (文件大小:520K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
FDMS86200
MOSFET, N‐Channel,
Shielded Gate,
POWERTRENCH)
150 V, 35 A, 18 mW
www.onsemi.com
General Description
This N−Channel MOSFET is produced using ON Semiconductor’s
®
advanced POWERTRENCH process that incorporates Shielded
S
D
D
D
Gate technology. This process has been optimized for the on−state
resistance and yet maintain superior switching performance.
S
S
G
Features
• Shielded Gate MOSFET Technology
D
• Max r
• Max r
= 18 mW at V = 10 V, I = 9.6 A
GS D
DS(on)
= 21 mW at V = 6 V, I = 8.8 A
DS(on)
GS
D
N-Channel MOSFET
• Advanced Package and Silicon combination for low r
efficiency
• MSL1 robust package design
and high
DS(on)
Top
Bottom
S
Pin 1
S
• 100% UIL tested
• RoHS Compliant
S
G
D
D
Applications
D
D
• DC−DC Conversion
Power 56
(PQFN8)
CASE 483AE
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current:
Ratings
Unit
V
MARKING DIAGRAM
V
DS
V
GS
150
20
V
S
S
D
D
I
D
A
$Y&Z&3&K
FDMS
86200
− Continuous T = 25°C
35
9.6
100
C
− Continuous T = 25°C (Note 1a)
A
S
D
D
− Pulsed
G
E
Single Pulse Avalanche Energy (Note 3)
Power Dissipation:
220
mJ
W
AS
P
D
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
T
= 25°C
104
2.5
C
T = 25°C (Note 1a)
A
T , T
Operating and Storage Junction Tempera-
ture Range
−55 to
+150
°C
J
STG
FDMS86200
= Specific Device Code
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
November, 2018 − Rev. 2
FDMS86200/D
FDMS86200
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Quantity
FDMS86200
FDMS86200
Power 56 (PQFN8)
(Pb-Free / Halogen Free)
3000/Tape&Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
THERMAL CHARACTERISTICS
Symbol
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (Note 1a)
Value
1.2
Unit
°C/W
R
q
JC
R
50
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 250 mA, V = 0 V
150
V
DSS
D
GS
DBV
Breakdown Voltage Temperature
Coefficient
= 250 mA, referenced to 25°C
110
mV/°C
DSS
D
/DT
J
DSS
GSS
I
Zero Gate Voltage Drain Current
V
V
= 120 V, V = 0 V
1
mA
DS
GS
I
Gate to Source Leakage Current, Forward
=
20 V, V = 0 V
100
nA
GS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = 250 mA
2.0
2.5
4.0
V
GS(th)
GS
DS
D
DV
/DT
Gate to Source Threshold Voltage
Temperature Coefficient
= 250 mA, referenced to 25°C
−10
mV/°C
GS(th)
J
D
r
Static Drain to Source On Resistance
Forward Transconductance
V
GS
V
GS
V
GS
V
DS
= 10 V, I = 9.6 A
15
17
28
33
18
21
34
mW
DS(on)
D
= 6 V, I = 8.8 A
D
= 10 V, I = 9.6 A, T = 125°C
D
J
g
FS
= 10 V, I = 9.6 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 75 V, V = 0 V, f = 1 MHz
2041
203
10
2715
270
16
pF
pF
pF
W
iss
DS
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
rss
R
f = 1MHz
0.1
1.2
3
g
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Rise Time
V
= 75 V, I = 9.6 A, V = 10 V,
GEN
13
7.9
27
23
16
44
12
46
ns
ns
ns
ns
nC
d(on)
DD
D
GS
R
= 6 W
t
r
t
Turn-Off Delay Time
Fall Time
d(off)
t
f
5.8
33
Q
Total Gate Charge
V
= 0 V to 10 V, V = 75 V,
DD
= 9.6 A
g
GS
GS
DD
I
D
V
= 0 V to 5 V, V = 75 V,
18
26
nC
DD
I
D
= 9.6 A
Q
Gate to Source Charge
V
= 75 V, I = 9.6 A
7.9
7.7
nC
nC
gs
D
Q
Gate to Drain “Miller” Charge
gd
www.onsemi.com
2
FDMS86200
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
DRAIN-SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward Voltage
V
V
= 0 V, I = 2 A (Note 2)
0.69
0.77
76
1.2
1.3
V
SD
GS
S
= 0 V, I = 9.6 A (Note 2)
GS
S
t
Reverse Recovery Time
I = 9.6 A, di/dt = 100 A/ms
F
120
181
ns
rr
Q
Reverse Recovery Charge
113
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. R
is determined
CA
q
q
JA
by the user’s board design.
a. 50 °C/W when mounted on a
1 in pad of 2 oz copper.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. E of 220 mJ is based on starting T = 25°C, L = 1 mH, I = 21 A, V = 150 V, V = 10 V. 100% test at L = 0.1 mH, I = 46 A.
AS
J
AS
DD
GS
AS
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
100
4
VGS = 10 V
VGS = 6 V
VGS = 5 V
VGS = 4 V
80
60
40
20
0
3
VGS = 4.5 V
VGS = 5 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
2
1
0
V
GS = 6 V
VGS = 4.5 V
VGS = 4 V
VGS = 10 V
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
0
1
2
3
, DRAIN TO SOURCE VOLTAGE (V)
4
5
0
20
40
60
80
100
V
I , DRAIN CURRENT (A)
D
DS
Figure 1. On Region Characteristics
Figure 2. Normalized On−Resistance
vs. Drain Current and Gate Voltage
www.onsemi.com
3
FDMS86200
TYPICAL CHARACTERISTICS (continued)
(T = 25°C unless otherwise noted)
J
2.4
2.0
1.6
1.2
0.8
0.4
30
25
20
ID = 9.6 A
VGS = 10 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
ID = 9.6 A
15
10
TJ = 125 o
C
5
TJ = 25 o
C
0
−75 −50 −25
0
25 50 75 100 125 150
0
T , JUNCTION TEMPERATURE (5C)
J
V , GATE TO SOURCE VOLTAGE (V)
GS
Figure 3. Normalized On Resistance
vs. Junction Temperature
Figure 4. On−Resistance vs. Gate
to Source Voltage
100
80
60
40
20
0
100
10
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
VGS = 0 V
TJ = 150 o
C
VDS = 5 V
1
TJ = 150 o
C
TJ = 25 oC
0.1
T
J = 25 o
C
0.01
TJ = −55oC
TJ = −55oC
0.001
2
3
4
5
6
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
GS
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs. Source Current
10
8
5000
ID = 9.6 A
VDD = 75 V
Ciss
1000
100
V
DD = 50 V
VDD = 100 V
6
Coss
4
2
f = 1 MHz
10
5
Crss
V
GS = 0 V
0
0
5
10
15
20
25
30
35
0.1
1
10
100
Q , GATE CHARGE (nC)
g
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain
to Source Voltage
www.onsemi.com
4
FDMS86200
TYPICAL CHARACTERISTICS (continued)
(T = 25°C unless otherwise noted)
J
60
45
30
50
10
TJ = 25 oC
VGS = 10 V
TJ = 100 o
C
Limited by Package
VGS = 6 V
15
0
TJ = 125 o
C
R
qJC = 1.2 oC/W
1
0.001
0.01
t
0.1
1
10
50
25
50
75
100
125
o
150
, CASE TEMPERATURE (
T
C)
, TIME IN AVALANCHE (ms)
AV
c
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
500
100
50000
10000
SINGLE PULSE
qJC = 1.2 oC/W
10 ms
R
T
C = 25 oC
10
1
100 ms
1000
100
10
THIS AREA IS
LIMITED BY r DS(on)
1 ms
SINGLE PULSE
TJ = MAX RATED
10 ms
DC
0.1
R
qJC = 1.2oC/W
CURVE BENT TO
MEASURED DATA
T
C = 25 oC
0.01
10−5
10−4
10−3
t, PULSE WIDTH (sec)
10−2
10−1
1
0.1
1
10
100
500
V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
Figure 12. Single Pulse Maximum
Power Dissipation
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
P
DM
0.05
0.02
0.01
0.1
0.01
t
1
t
2
NOTES:
(t) = r(t) x R
Z
qJC
qJC
R
= 1.2 5C/W
qJC
SINGLE PULSE
Peak T = P x Z (t) + T
C
J
DM
qJC
Duty Cycle, D = t / t
0.001
10−5
10−4
10−3
10−2
10−1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Response Curve
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and or other
countries.
www.onsemi.com
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN8 5X6, 1.27P
CASE 483AE
ISSUE C
DATE 21 JAN 2022
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13655G
PQFN8 5X6, 1.27P
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号:
©2020 ICPDF网 联系我们和版权申明