FDMS86255ET150 [ONSEMI]
N 沟道屏蔽门极 PowerTrench® MOSFET 150 V，63 A，12.4mΩ;
| 型号： | FDMS86255ET150 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道屏蔽门极 PowerTrench® MOSFET 150 V，63 A，12.4mΩ 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：503K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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2015 年 3 月
FDMS86255ET150
N 沟道屏蔽栅极 PowerTrench® MOSFET
150 V, 63 A, 12.4 mΩ
特性
概述
扩展额定 TJ 至 175°C
本 N 沟道 MOSFET 采用飞兆半导体先进的 PowerTrench® 工艺
制造而成，其中集成了栅极屏蔽技术。该工艺经优化以减小导通
电阻，却仍保持卓越的开关性能。
屏蔽栅极 MOSFET 技术
最大 rDS(on) = 12.4 mΩ (VGS = 10 V, ID = 10 A)
最大 rDS(on) = 15.5 mΩ (VGS = 6 V, ID = 8 A)
低 rDS(on) 和高效的先进硅封装
下一代先进体二极管技术，专为软恢复设计
MSL1 耐用封装设计
应用
OringFET / 负载开关
同步整流
DC-DC 转换
100% 经过 UIL 测试
符合 RoHS 标准
底
顶
引脚
1
S
S
D
D
D
S
引脚 1
S
G
S
S
G
D
D
D
D
D
Power 56
MOSFET 最大额定值 TA = 25 °C 除非另有说明
符号
参数
额定值
单位
VDS
VGS
Drain to Source Voltage
150
V
±20
63
V
栅极－源极电压
漏极电流
- 连续
- 连续
- 连续
- 脉冲
TC = 25 °C
TC = 100°C
TA = 25°C
（注 5）
（注 5）
（注 1a）
（注 4）
（注 3）
44
ID
A
10
276
EAS
PD
541
mJ
W
单脉冲雪崩能量
功耗
136
TC = 25 °C
TA = 25 °C
3.3
功耗
（注 1a）
TJ, TSTG
°C
工作和存储结温范围
-55 至 +175
热性能
RθJC
RθJA
1.1
45
结 - 壳体的热阻
°C/W
结至环境热阻最大值
（注 1a）
封装标识与定购信息
器件标识
器件
封装
卷尺寸
13 ’’
带宽
12 mm
数量
FDMS86255ET
FDMS86255ET150
Power 56
3000 个
1
www.fairchildsemi.com
©2015 飞兆半导体公司
FDMS86255ET150 修订版 C
电气特性 TJ = 25°C，除非另有说明
符号
参数
测试条件
最小值 典型值 最大值
单位
关断特性
BVDSS
ID = 250 μA, VGS = 0 V
150
V
漏极－源极击穿电压
ΔBVDSS
ΔTJ
ID = 250 μA （相对 25 °C）
109
mV/°C
击穿电压温度系数
IDSS
IGSS
VDS = 120 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
1
μA
nA
零栅极电压漏极电流
栅极－源极漏电流
±100
导通特性
VGS(th)
VGS = VDS, ID = 250 μA
2.0
3.0
-11
4.0
V
栅极－源极阈值电压
ΔVGS(th)
ΔTJ
ID = 250 μA （相对 25 °C）
mV/°C
栅极－源极阈值电压温度系数
V
GS = 10 V, ID = 10 A
9.5
11.5
19
12.4
15.5
25
rDS(on)
gFS
VGS = 6 V, ID = 8 A
mΩ
漏极至源极静态导通电阻
正向跨导
VGS = 10 V, ID = 10 A, TJ = 125 °C
VDS = 5 V, ID = 10 A
35
S
动态特性
Ciss
3200
291
11
4480
410
20
pF
pF
pF
Ω
输入电容
VDS = 75 V, VGS = 0 V,
f = 1 MHz
Coss
输出电容
Crss
反向传输电容
栅极阻抗
Rg
0.1
0.7
2.1
开关特性
td(on)
tr
td(off)
tf
21
4.5
28
34
10
45
12
63
41
ns
ns
导通延迟时间
上升时间
V
V
DD = 75 V, ID = 10 A,
GS = 10 V, RGEN = 6 Ω
ns
关断延迟时间
下降时间
6.2
45
ns
Qg
VGS = 0 V 到 10 V
VGS = 0 V 到 6 V
nC
nC
nC
nC
总栅极电荷
Qg
29
总栅极电荷
VDD = 75 V,
D = 10 A
I
Qgs
Qgd
14
栅极－源极电荷
栅极－漏极 “ 米勒 ” 电荷
8.8
漏极－源极二极管特性
VGS = 0 V, IS = 1.9 A
VGS = 0 V, IS = 10 A
（注 2）
0.7
0.8
87
1.2
1.3
VSD
V
源极－漏极二极管正向电压
（注 2）
trr
139
264
ns
反向恢复时间
反向恢复电荷
IF = 10 A, di/dt = 100 A/μs
Qrr
165
nC
注意：
1. R
2
取决于安装在 FR-4 材质 1.5 x 1.5 英寸电路板上 1 英寸 2 盎司铜焊盘上的器件。 R
取决于使用者的电路板设计。
θJA
θCA
2
a. 45 °C/W 安装于 1 英寸 的 2
盎司铜焊盘。
b. 115 °C/W 安装于最小尺寸的 2
盎司铜焊盘。
2. 脉冲测试：脉宽 < 300 μ，占空比 < 2.0%。
3. 541 mJ 的 E 取决于起始 T = 25 °C、 L = 3 mH、 I = 19 A、 V = 150 V、 V = 10 V。测试百分比 100%：L = 0.1 mH、 I = 60 A。
AS
J
AS
DD
GS
AS
4. 脉冲 Id 请参见图 11 SOA 曲线。
5. 直流理论值仅受限于最大结温，直流实际值则同时受限于热和机电电路板的设计。
2
©2015 飞兆半导体公司
FDMS86255ET150 修订版 C
www.fairchildsemi.com
典型特性 TJ = 25 °C 除非另有说明
100
4
3
2
1
0
VGS = 10 V
VGS = 6 V
VGS = 4.5 V
80
60
40
20
0
VGS = 5 V
VGS = 5.5 V
VGS = 5.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 5 V
VGS = 6 V VGS = 10 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 4.5 V
0
1
2
3
4
5
0
20
40
60
80
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
图 1. 导通区域特性
图 2. 标准化导通电阻 vs 漏极电流和栅极电压
50
3.0
2.5
2.0
1.5
1.0
0.5
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
ID = 10 A
GS = 10 V
V
40
ID = 10 A
30
TJ = 150 o
C
20
10
0
TJ = 25 o
C
4
6
8
10
-75 -50 -25
0
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
图 3. 标准化导通电阻 vs 结温
图 4. 导通电阻 vs 栅极－源极电压
100
80
60
40
20
0
100
10
VGS = 0 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = 175 o
C
VDS = 5 V
1
TJ = 175 o
C
TJ = 25 o
C
0.1
TJ = 25 o
C
0.01
TJ = -55 o
C
TJ = -55 o
C
0.001
2
3
4
5
6
7
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
图 5. 转换特性
图 6. 源极－漏极二极管正向电压 vs 源极电流
3
©2015 飞兆半导体公司
FDMS86255ET150 修订版 C
www.fairchildsemi.com
典型特性 TJ = 25 °C 除非另有说明
10
10000
1000
100
ID = 10 A
Ciss
8
VDD = 75 V
Coss
6
VDD = 50 V
VDD = 100 V
4
2
0
Crss
f = 1 MHz
VGS = 0 V
10
5
0.1
0
10
20
30
40
50
1
10
100
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
图 7. 栅极电荷特性
图 8. 电容 vs 漏极－源极电压
75
60
45
30
15
0
100
10
1
VGS = 10 V
TJ = 25 o
C
VGS = 6 V
TJ = 100 o
C
TJ = 150 o
C
RθJC = 1.1 oC/W
0.01
0.1
1
10
100 300
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE (ms)
图 9. 非钳位感应开关能力
图 10. 最大连续漏极电流 vs 壳体温度
1000
20000
10000
SINGLE PULSE
RθJC = 1.1 oC/W
C = 25 o
100
10
10 μs
T
C
1000
100
10
100 μs
THIS AREA IS
LIMITED BY rDS(on)
1 ms
1
SINGLE PULSE
TJ = MAX RATED
RθJC = 1.1 oC/W
TC = 25 oC
10 ms
DC
0.1
CURVE BENT TO
MEASURED DATA
0.01
10-5
10-4
10-3
t, PULSE WIDTH (sec)
10-2
10-1
100
0.1
1
10
100
500
VDS, DRAIN to SOURCE VOLTAGE (V)
图 11. 正向偏置安全工作区
图 12. 单脉冲最大功耗
4
©2015 飞兆半导体公司
FDMS86255ET150 修订版 C
www.fairchildsemi.com
典型特性 TJ = 25 °C 除非另有说明
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
P
0.05
0.02
0.01
DM
0.1
t
1
t
2
注：
0.01
0.001
SINGLE PULSE
Z
(t) = r(t) x R
θJC
θJC
R
= 1.1 °C/W
θJC
峰值 T = P
占空比 D = t / t
x Z (t) + T
θJC C
J
DM
1
2
10-5
10-4
10-3
10-2
10-1
100
t, RECTANGULAR PULSE DURATION (sec)
图 13. 瞬态热响应曲线
5
©2015 飞兆半导体公司
FDMS86255ET150 修订版 C
www.fairchildsemi.com
5.10
4.90
A
4.42
3.81
PKG
C
L
B
7
6
5
8
8
5
1.14
KEEP OUT AREA
3.65
6.25
5.90
C
PKG
L
6.61
4.79
1.27
1
4
PIN #1
IDICATOR
TOP VIEW
SIDE VIEW
1
2
1.27
3
4
0.61
SEE
DETAIL A
3.81
5.10
LAND PATTERN
RECOMMENDATION
3.81
1.27
0.10
C A B
0.47
0.37
(0.38)
(8X)
1
4
(0.35)
0.65
0.55
NOTES: UNLESS OTHERWISE SPECIFIED
A) PACKAGE STANDARD REFERENCE:
JEDEC MO-240, ISSUE A, VAR. AA,
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE BURRS
OR MOLD FLASH. MOLD FLASH OR
PIN #1
INDICATOR
4.66
4.46
BURRS DOES NOT EXCEED 0.10MM.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M-2009.
E) IT IS RECOMMENDED TO HAVE NO TRACES
OR VIAS WITHIN THE KEEP OUT AREA.
F) DRAWING FILE NAME: PQFN08JREV3.
8
5
0.70
4.33
4.13
BOTTOM VIEW
0.10 C
1.10
0.90
0.08 C
C
0.05
0.00
0.25
0.15
SEATING
PLANE
SCALE: 2:1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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