FDMS86263P [ONSEMI]
P 沟道，PowerTrench® MOSFET，-150V，-22A，53mΩ;
| 型号： | FDMS86263P |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道，PowerTrench® MOSFET，-150V，-22A，53mΩ 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：409K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – P-Channel,
POWERTRENCH)
V
r
MAX
I MAX
D
DS
DS(on)
−150 V
53 mW @ −10 V
64 mW @ −6 V
−22 A
-150 V, -22 A, 53 mW
FDMS86263P
Pin 1
S
S
General Description
S
G
This P−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH technology. This very high density process is
especially tailored to minimize on−state resistance and optimized for
superior switching performance.
D
D
D
D
Bottom
Top
Features
PQFN8 5X6, 1.27P
(Power 56)
• Max r
• Max r
= 53 mW at V = −10 V, I = −4.4 A
GS D
DS(on)
DS(on)
= 64 mW at V = −6 V, I = −4 A
CASE 483AE
GS
D
• Very Low Rds−on in Mid−Voltage P−Channel Silicon Technology
Optimized for Low Qg
• This Product is Optimised for Fast Switching Applications as Well
as Load Switch Applications
MARKING DIAGRAM
• 100% Uil Tested
• This Device is Pb−Free and is RoHS Compliant
$Y&Z&2&K
FDMS
86263P
Applications
• Active Clamp Switch
• Load Switch
$Y
&Z
&2
&K
= Logo
= Assembly Plant Code
= 2−Digit Date Code Format
= 2−Digits Lot Run Traceability Code
FDMS86263P = Specific Device Code
PIN ASSIGNMENT
S
8
D
1
2
S
S
7
6
5
D
D
D
3
4
G
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
July, 2022 − Rev. 3
FDMS86263P/D
FDMS86263P
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Ratings
−150
25
Unit
V
V
DS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
V
I
D
Continuous
T
C
= 25°C
−22
A
Continuous (Note 2a)
Pulsed
T = 25°C
A
−4.4
−70
E
Single Pulse Avalanche Energy (Note 1)
Power Dissipation
384
mJ
W
AS
P
T
C
= 25°C
104
D
Power Dissipation (Note 2a)
T = 25°C
A
2.5
T , T
Operating and Storage Junction Temperature Range
−55 to +150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Starting T = 25°C; P−ch: L = 3 mH, I = −16 A, V = −150 V, V = −10 V. 100% test at L = 0.1 mH, I = −52 A.
J
AS
DD
GS
AS
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
1.2
Unit
RqJC
RqJA
Thermal Resistance, Junction to Case
°C/W
Thermal Resistance, Junction to Ambient (Note 2a)
50
2
2. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed
q
q
JC
JA
by design while R
is determined by the user’s board design.
q
CA
a. 50°C/W when mounted on
b. 125°C/W when mounted on
a minimum pad of 2 oz copper
2
a 1 in pad of 2 oz copper
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2
FDMS86263P
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= −250 mA, V = 0 V
−150
−
−
−
−
V
DSS
D
GS
Breakdown Voltage Temperature
Coefficient
= −250 mA, referenced to 25°C
−116
mV/°C
DBVDSS
DTJ
D
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= −120 V, V = 0 V
−
−
−
−
−1
mA
DSS
GSS
DS
GS
I
=
25 V, V = 0 V
100
nA
GS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = −250 mA
−2
−
−2.9
7
−4
−
V
GS(th)
GS
DS D
Gate to Source Threshold Voltage
Temperature Coefficient
= −250 mA, referenced to 25°C
mV/°C
DVGS(th)
DTJ
D
r
Static Drain to Source On Resistance
Forward Transconductance
V
GS
V
GS
V
GS
V
DS
= −10 V, I = −4.4 A
−
−
−
−
42
45
71
19
53
64
94
−
mW
DS(on)
D
= −6 V, I = −4 A
D
= −10 V, I = −4.4 A, T = 125°C
D
J
g
FS
= −10 V, I = −4.4 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= −75 V, V = 0 V, f = 1 MHz
−
−
2935
238
11
3905
315
20
pF
pF
pF
W
iss
GS
C
oss
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C
rss
−
R
0.1
2.7
5.4
g
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Rise Time
V
R
= −75 V, I = −4.4 A, V = −10 V,
−
−
−
−
−
−
−
−
17
10
31
21
59
25
63
40
−
ns
ns
d(on)
DD
D
GS
= 6 W
GEN
t
r
t
Turn−Off Delay Time
Fall Time
37
ns
d(off)
t
f
14
ns
Q
Q
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V
GS
V
GS
V
DD
= 0 V to −10 V, V = −75 V, I = −4.4 A
45
nC
nC
nC
nC
g
DD
D
= 0 V to −6 V, V = −75 V, I = −4.4 A
29
g
DD
D
Q
= −75 V, I = −4.4 A
11.3
8.9
gs
gd
D
Q
−
DRAIN−SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward
Voltage
V
V
= 0 V, I = −4.4 A (Note 3)
−
−
−
−
−0.79
−0.75
91
−1.3
−1.2
146
460
V
SD
GS
S
= 0 V, I = −2 A (Note 3)
GS
S
t
Reverse Recovery Time
I = −4.4 A, di/dt = 100 A/ms
F
ns
rr
Q
Reverse Recovery Charge
287
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
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3
FDMS86263P
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
4
70
56
42
28
14
0
V
GS
= −10 V
V
GS
= −4.5 V
V
= −6 V
= −5 V
GS
3
2
1
0
V
= −5.5 V
GS
V
GS
= −5 V
V
GS
V
GS
= −5.5 V
V
= −4.5 V
GS
V
= −10 V
GS
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
GS
= −6 V
0
14
28
42
56
70
0
1
2
3
4
5
−V , DRAIN TO SOURCE VOLTAGE (V)
DS
−I , DRAIN CURRENT (A)
D
Figure 1. On Region Characteristics
Figure 2. Normalized On−Resistance vs.
Drain Current and Gate Voltage
2.2
140
I
V
= −4.4 A
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
D
2.0
1.8
= −10 V
GS
120
I
D
= −4.4 A
1.6
1.4
1.2
1.0
0.8
0.6
0.4
100
80
60
40
20
T = 125°C
J
T = 25°C
J
−75 −50 −25
0
25 50 75 100 125 150
3
4
5
6
7
8
9
10
T , JUNCTION TEMPERATURE (°C)
J
−V , GATE TO SOURCE VOLTAGE (V)
GS
Figure 3. Normalized On−Resistance vs.
Junction Temperature
Figure 4. On−Resistance vs. Gate to Source
Voltage
100
70
V
GS
= 0 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
56
10
1
V
DS
= −10 V
T = 150°C
J
42
28
14
0
T = 25°C
J
T = 150°C
J
0.1
T = 25°C
J
T = −55°C
J
0.01
T = −55°C
J
0.001
2
3
4
5
6
0.4
0.6
0.8
1.0
1.2
−V , GATE TO SOURCE VOLTAGE (V)
GS
−V , BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs. Source Current
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4
FDMS86263P
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
10
8
10000
I
D
= −4.4 A
Ciss
V
= −50 V
DD
1000
100
10
Coss
V
= −75 V
DD
6
V
= −100 V
DD
Crss
4
2
f = 1 MHz
= 0 V
V
GS
0
1
0
10
20
30
40
50
0.1
1
10
100
Q , GATE CHARGE (nC)
g
−V , DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain to Source Voltage
100
40
R
= 1.2°C/W
q
JC
30
20
10
0
T = 25°C
J
10
T = 100°C
J
V
= −10 V
GS
Limited by Package
T = 125°C
V
= −6 V
J
GS
1
0.001
0.01
0.1
1
10
100
25
50
75
100
125
150
t , TIME IN AVALANCHE (ms)
AV
T , CASE TEMPERATURE (°C)
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain Current
vs. Case Temperature
200
30000
SINGLE PULSE
10 ms
100
10
R
T
= 1.2°C/W
= 25°C
q
JC
C
10000
1000
100 ms
THIS AREA IS
LIMITED BY r
DS(on)
1 ms
10 ms
DC
SINGLE PULSE
1
T = MAX RATED
J
R
T
= 1.2°C/W CURVE BENT TO
= 25°C
q
JC
100
50
MEASURED DATA
10 100
−V , DRAIN TO SOURCE VOLTAGE (V)
C
0.1
1
400
10−5
10−4
10−3
10−2
10−1
1
t, PULSE WIDTH (s)
DS
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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5
FDMS86263P
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
PDM
0.1
0.05
0.02
0.01
t1
0.1
t2
NOTES:
Z
q
(t) = r(t) x R
q
JC
JC
R
= 1.2°C/W
q
JC
Peak T = P
Duty Cycle: D = t / t
x Z (t) + T
q
JC C
J
DM
0.01
SINGLE PULSE
10−4
1
2
0.005
10−4
10−3
10−2
10−1
1
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Junction−to−Ambient Transient Thermal Response Curve
PACKAGE MARKING AND ORDERING INFORMATION
†
Device
Device Marking
Package
Reel Size
Tape Width
Shipping
FDMS86263P
FDMS86263P
PQFN8 5X6, 1.27P
Power 56
13”
12 mm
3000 / Tape & Reel
(Pb−Free)
†For Information On Tape And Reel Specifications, Including Part Orientation And Tape Sizes, Please Refer To Our Tape And Reel Packaging
Specifications Brochure, Brd8011/D.
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other
countries.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN8 5X6, 1.27P
CASE 483AE
ISSUE C
DATE 21 JAN 2022
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13655G
PQFN8 5X6, 1.27P
PAGE 1 OF 1
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