FDMS86350 [ONSEMI]
N 沟道，PowerTrench® MOSFET，80V，130A，2.4mΩ;
| 型号： | FDMS86350 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，80V，130A，2.4mΩ 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：411K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – N-Channel,
POWERTRENCH®
Pin 1
Pin 1
S
S
S
G
80ꢀV, 130ꢀA, 2.4ꢀmW
D
D
D
D
FDMS86350
Top
Bottom
PQFN8 5X6, 1.27P
CASE 483AG
Description
This N−Channel MOSFET is produced using onsemi advanced
POWERTRENCH process that has been especially tailored to
®
minimize the on−state resistance and yet maintain superior switching
performance.
ELECTRICAL CONNECTION
Features
S
S
S
G
1
2
3
4
8
7
6
5
D
D
D
D
• Max R
• Max R
= 2.4 mW at V = 10 V, I = 25 A
GS D
DS(on)
= 3.2 mW at V = 8 V, I = 22 A
DS(on)
GS
D
• Advanced Package and Silicon Combination for Low R
High Efficiency
and
DS(on)
• MSL1 Robust Package Design
• 100% UIL Tested
• RoHS Compliant
• These Device is Halogen Free
MARKING DIAGRAM
Applications
• Primary MOSFET
• Synchronous Rectifier
• Load Switch
$Y&Z&3&K
FDMS
86350
• Motor Control Switch
$Y
&Z
&3
&K
FDMS
86350
= Logo
= Assembly Location
= Date Code (Year and Week)
= Lot Run Traceability Code
= Specific Device Code
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Ratings
80
Unit
V
DS
V
V
A
= Specific Device Code
V
GS
20
I
D
− Continuous T = 25°C
130
25
300
C
ORDERING INFORMATION
− Continuous T = 25°C (Note 1a)
A
− Pulsed (Note 4)
See detailed ordering and shipping information on
page 3 of this data sheet.
E
AS
Single Pulse Avalanche Energy
(Note 3)
864
mJ
W
P
D
Power Dissipation, T = 25°C
156
2.7
C
Power Dissipation, T = 25°C
A
(Note 1a)
T , T
Operating and Storage Junction
Temperature Range
−55 to +150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Publication Order Number:
© Semiconductor Components Industries, LLC, 2013
1
FDMS86350/D
October, 2021 − Rev. 3
FDMS86350
THERMAL CHARACTERISTICS
Symbol
Parameter
Rating
0.8
Unit
R
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (Note 1a)
°C/W
θ
JC
JA
R
45
θ
ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted
J
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 250 μA, V = 0 V
80
−
−
−
V
DSS
D
GS
ΔBV
ΔT
Breakdown Voltage Temperature
Coefficient
= 250 μA, referenced to 25°C
−
45
mV/°C
DSS
D
J
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 64 V, V = 0 V
−
−
−
−
1
μA
DSS
GSS
DS
GS
I
=
20 V, V = 0 V
100
nA
GS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = 250 μA
2.5
3.8
4.5
V
GS(th)
GS
DS D
ΔV
Gate to Source Threshold Voltage
Temperature Coefficient
= 250 μA, referenced to 25°C
−
−12
−
mV/°C
GS(th)
D
ΔT
J
R
Static Drain to Source On Resistance
V
GS
V
GS
V
GS
V
DS
= 10 V, I = 25 A
−
−
−
−
2.0
2.5
3.1
70
2.4
3.2
3.8
−
mΩ
DS(ON)
D
= 8 V, I = 22 A
D
= 10 V, I = 25 A, T = 125°C
D
J
g
FS
Forward Transconductance
= 5 V, I = 25 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 40 V, V = 0 V,
−
−
8030
1370
31
10680
1825
50
pF
pF
pF
Ω
ISS
DS
GS
f = 1 MHz
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
OOS
Crss
−
R
0.1
1.1
3
g
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Rise Time
V
V
= 40 V, I = 25 A,
−
−
−
−
−
−
−
−
50
34
40
11
80
55
65
20
155
127
−
ns
ns
d(on)
DD
GS
D
= 10 V, R
= 6 Ω
GEN
t
r
t
Turn−Off Delay Time
Fall Time
ns
d(off)
t
f
ns
Q
Q
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V
V
= 0 V to 10 V
= 0 V to 8 V
V = 40 V,
DD
I
110
90
46
23
nC
nC
nC
nC
g
g
GS
= 25 A
D
GS
Qgs
Qgd
−
DRAIN−SOURCE DIODE CHARACTERISTICS
I
Diode Continuous Forward Current
Diode Pulse Current
T
= 25°C
= 25°C
−
−
−
−
−
−
−
−
130
300
1.2
A
A
V
S
C
I
T
C
S, pulse
V
SD
Source to Drain Diode Forward
Voltage
V
V
= 0 V, I = 2.1 A (Note 2)
0.71
0.79
63
GS
S
= 0 V, I = 25 A (Note 2)
1.3
GS
S
t
rr
Reverse Recovery Time
I = 25 A, di/dt = 100 A/ms
F
101
100
ns
Q
Reverse Recovery Charge
62
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
FDMS86350
NOTES:
1. R
2
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed
q
q
JC
JA
by design while R
is determined by the user’s board design.
θ
CA
b. 115°C/W when mounted on
a minimum pad of 2 oz copper
a. 45°C/W when mounted on
2
a 1 in pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. E of 864 mJ is based on starting T = 25°C; L = 3 mH, I = 24 A, V = 80 V, V = 10 V. 100% test at L = 0.1 mH, I = 74 A.
AS
J
AS
DD
GS
AS
4. Pulse Id limited by junction temperature, td <= 100 ms, please refer to SOA curve for more details.
PACKAGE MARKING AND ORDERING INFOMRATION
ORDERING INFORMATION
†
Device Marking
Device
Package
Reel Size
Tape Width
Shipping
FDMS86350
FDMS86350
PQFN8
13"
12 mm
3000 / Tape and Reel
(Power 56)
(Halogen Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
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3
FDMS86350
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
300
250
200
150
100
5
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
V
= 10 V
V
= 6 V
GS
GS
4
3
2
1
0
V
GS
= 8 V
V
= 6.5 V
GS
V
GS
= 7 V
V
GS
= 7 V
V
V
GS
= 6.5 V
= 8 V
GS
V
GS
= 6 V
50
0
V
= 10 V
GS
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
0
1
2
3
4
5
0
50
100
150
200
250
300
V
DS
, Drain to Source Voltage (V)
I , Drain Current (A)
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs.
Drain Current and Gate Voltage
1.8
1.6
1.4
10
8
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
I
V
= 25 A
D
= 10 V
GS
I
D
= 25 A
6
1.2
1.0
T = 125°C
J
4
2
0.8
T = 25°C
J
0
0.6
0
−75 −50 −25
25 50 75 100 125 150
5
6
7
8
9
10
T , Junction Temperature (5C)
J
V
GS
, Gate to Source Voltage (V)
Figure 3. Normalized On−Resistance vs.
Figure 4. On−Resistance vs. Gate to
Junction Temperature
Source Voltage
500
100
300
250
200
150
100
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
V
GS
= 0 V
V
DS
= 5 V
10
1
T = 150°C
J
T = 150°C
J
T = 25°C
J
T = 25°C
J
0.1
0.01
T = −55°C
50
0
J
T = −55°C
J
0.001
3
4
5
6
7
8
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, Gate to Source Voltage (V)
V
SD
, Body Diode Forward Voltage (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs. Source Current
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4
FDMS86350
TYPICAL CHARACTERISTICS (continued)
(T = 25°C unless otherwise noted)
J
10000
10
8
I
D
= 25 A
C
C
iss
V
DD
= 40 V
V
= 30 V
V
DD
= 50 V
DD
1000
100
10
oss
6
4
C
rss
2
f = 1 MHz
= 0 V
V
GS
0
0
20
40
60
80
100
120
0.1
1
10
, Drain to Source Voltage (V)
DS
80
Q , Gate Charge (nC)
V
g
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs.
Drain to Source Voltage
100
10
1
200
160
120
80
R
= 0.8°C/W
q
JC
T = 25°C
J
T = 100°C
J
V
GS
= 10 V
Limited by Package
V
= 8 V
GS
T = 125°C
J
40
0
0.01
0.1
1
10
100
1000
25
50
75
100
125
150
t
, Time in Avalanche (ms)
AV
T , Case Temperature (5C)
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
1000
20000
10000
Single Pulse
R
= 0.8°C/W
q
JC
T
= 25°C
C
10 ms
100
10
This Area is
Limited by
R
DS(on)
100 ms
1000
100
Single Pulse
T = Max Rated
J
1 ms
R
= 0.8°C/W
= 25°C
1
q
JC
10 ms
T
C
Curve Bent to Measured Data
DC
0.1
−5
−4
−3
−2
−1
0.1
1
10
100 300
10
10
10
10
10
1
V
DS
, Drain to Source Voltage (V)
t, Pulse Width (s)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum
Power Dissipation
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5
FDMS86350
TYPICAL CHARACTERISTICS (continued)
(T = 25°C unless otherwise noted)
J
2
1
Duty Cycle−Descending Order
D = 0.5
0.2
0.1
P
DM
0.05
0.02
0.01
t
1
0.1
t
2
Notes:
Z
R
(t) = r(t) × R
= 0.8°C/W
q
q
JC
JC
q
JC
Single Pulse
Peak T = P
× Z (t) + T
q
JC C
J
DM
Duty Cycle, D = t / t
1
2
0.01
−4
−3
−2
−1
−5
10
10
10
10
1
10
t, Rectangular Pulse Duration (s)
Figure 13. Junction−to−Case Transient Thermal Response Curve
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
www.onsemi.com
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN8 5X6, 1.27P
CASE 483AG
ISSUE A
DATE 25 JUN 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13657G
PQFN8 5X6, 1.27P
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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