FDMS86350ET80 [ONSEMI]
N 沟道，PowerTrench® MOSFET，80V，198A，2.4mΩ;
| 型号： | FDMS86350ET80 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，80V，198A，2.4mΩ |
| 文件： | 总8页 (文件大小：503K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
2015 年 3 月
FDMS86350ET80
N 沟道 PowerTrench® MOSFET
80 V、 198 A、 2.4 mΩ
特性
概述
此 N 沟道 MOSFET 器件采用 Fairchild 先进的 PowerTrench®
工
艺生产，这一先进工艺是专为最大限度地降低通态阻抗并保持卓
越的开关性能而定制的。
扩展额定 TJ 至 175°C
最大值 rDS(on) = 2.4 mΩ （VGS = 10 V、 ID = 25 A）
最大值 rDS(on) = 3.2 mΩ （VGS = 8 V、 ID = 22 A）
低 rDS(on) 和高效的先进硅封装
MSL1 耐用封装设计
应用
初级端 MOSFET
同步整流器
负载开关
100% 经过 UIL 测试
符合 RoHS 标准
电机控制开关
底
顶
引脚 1
S
S
D
D
D
D
S
引脚 1
S
G
S
S
G
D
D
D
D
Power 56
MOSFET 最大额定值 TA = 25 °C 除非另有说明
符号
参数
额定值
单位
VDS
VGS
80
V
漏极－源极电压
栅极－源极电压
漏极电流 - 连续
- 连续
±20
198
V
TC = 25 °C
（说明 5）
（说明 5）
（说明 1a）
（说明 4）
（说明 3）
140
TC = 100 °C
TA = 25 °C
ID
A
25
- 连续
693
- 脉冲
EAS
PD
864
mJ
W
单脉冲耐雪崩能量
功耗
187
TC = 25 °C
TA = 25 °C
3.3
功耗
（说明 1a）
TJ, TSTG
°C
工作和存储结温范围
-55 至 +175
热性能
RθJC
RθJA
0.8
45
结点 - 壳体的热阻
°C/W
结至环境热阻
（说明 1a）
封装标识与定购信息
器件标识
器件
封装
卷尺寸
13 ’’
带宽
12 mm
数量
FDMS86350ET
FDMS86350ET80
Power 56
3000 个
1
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©2015 飞兆半导体公司
FDMS86350ET80 修订版 C
电气特性 TJ = 25°C，除非另有说明。
符号
参数
测试条件
最小值 典型值 最大值
单位
关断特性
BVDSS
ID = 250 μA, VGS = 0 V
80
V
漏极－源极击穿电压
ΔBVDSS
ΔTJ
ID = 250 μA，参考温度为 25 °C
45
mV/°C
击穿电压温度系数
IDSS
IGSS
VDS = 64 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
1
μA
nA
零栅极电压漏极电流
栅极－源极漏电流
±100
导通特性
VGS(th)
VGS = VDS, ID = 250 μA
2.5
3.8
-12
4.5
V
栅源极阀值电压
ΔVGS(th)
ΔTJ
ID = 250 μA，参考温度为 25 °C
mV/°C
栅源极阀值电压温度系数
V
GS = 10 V, ID = 25 A
2.0
2.5
3.1
70
2.4
3.2
3.8
rDS(on)
gFS
VGS = 8 V, ID = 22 A
mΩ
漏极至源极静态导通电阻
正向跨导
VGS = 10 V, ID = 25 A, TJ = 125 °C
VDS = 5 V, ID = 25 A
S
动态特性
Ciss
8030
1370
31
pF
pF
pF
Ω
输入电容
VDS = 40 V, VGS = 0 V,
f = 1 MHz
Coss
输出电容
Crss
反向传输电容
栅极阻抗
Rg
0.1
1.1
3
Switching Characteristics
td(on)
tr
td(off)
tf
50
34
40
11
80
55
ns
ns
导通延迟时间
上升时间
V
DD = 40 V, ID = 25 A,
VGS = 10 V, RGEN = 6 Ω
65
ns
关断延迟时间
下降时间
20
ns
Qg
VGS = 0 V 至 10 V
VGS = 0 V 至 8 V
110
90
46
23
155
127
nC
nC
nC
nC
总栅极电荷
Qg
总栅极电荷
VDD = 40 V,
D = 25 A
I
Qgs
Qgd
栅源极电荷
栅极 - 漏极 “ 米勒 ” 电荷
漏极 - 源极二极管特性
0.71
0.79
63
1.2
1.3
V
GS = 0 V、 IS = 2.1 A （说明 2）
VSD
V
源极 - 漏极二极管正向电压
VGS = 0 V、IS = 25 A （说明 2）
trr
101
100
ns
反向恢复时间
反向恢复电荷
IF = 25 A, di/dt = 100 A/μs
Qrr
62
nC
注意：
1. R
2
取决于安装在 FR-4 材质 1.5 x 1.5 英寸电路板上 1 in 2 盎司铜焊盘上的器件。 R
取决于用户的电路板设计。
θJA
θCA
a. 45 °C/W，安装于
b. 115 °C/W，安装于
最小尺寸的 2 盎司铜焊盘。
2
1 in 2 盎司铜焊盘。
2. 脉冲测试 : 脉宽 < 300 μs，占空比 < 2.0%。
3. 864 mJ E 是基于开始温度 T = 25 °C、 L = 3 mH、 I = 24 A、 V = 80 V、 V = 10 V、且 100% 经过测试 （L = 0.1 mH、 I = 74 A）。
AS
J
AS
DD
GS
AS
4. 有关脉冲 ID，请参考图 11 SOA 曲线获取更多详情。
5. 计算的连续电流仅限制于最大结温，实际连续电流受到高温和机电应用电路板设计的限制。
www.fairchildsemi.com
2
©2015 飞兆半导体公司
FDMS86350ET80 修订版 C
典型特性 TJ = 25 °C，除非另有说明。
300
5
4
3
2
1
0
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 10 V
VGS = 6 V
250
200
150
100
50
VGS = 8 V
VGS = 6.5 V
VGS = 7 V
VGS = 7 V
VGS = 8 V
VGS = 6.5 V
VGS = 6 V
VGS = 10 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0
1
2
3
4
5
0
50
100
150
200
250
300
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
图 1. 导通区特性
图 2. 标准化导通电阻与漏极电流和栅极电压
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
PULSE DURATION = 80 μs
ID = 25 A
GS = 10 V
DUTY CYCLE = 0.5% MAX
8
V
ID = 25 A
6
TJ = 150 o
C
4
2
0
TJ = 25 o
C
-75 -50 -25
0
25 50 75 100 125 150 175
5
6
7
8
9
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
图 3. 标准化导通电阻与结温
图 4. 导通电阻与栅源极电压
300
250
200
150
100
50
300
100
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 0 V
VDS = 5 V
10
1
TJ = 175 o
C
TJ = 175 o
C
TJ = 25 o
C
0.1
TJ = 25 o
C
0.01
TJ = -55 o
C
TJ = -55 o
C
0
0.001
3
4
5
6
7
8
0.0
0.2
0.4
0.6
0.8 1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
图 5. 转移特性
图 6. 源漏极二极管正向电压与源极电流
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3
©2015 飞兆半导体公司
FDMS86350ET80 修订版 C
典型特性 TJ = 25 °C，除非另有说明。
10
10000
1000
100
Ciss
VDD = 40 V
ID = 25 A
8
6
4
2
0
VDD = 50 V
VDD = 30 V
Coss
f = 1 MHz
= 0 V
Crss
V
GS
10
0.1
0
20
40
60
80
100
120
1
10
80
VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE (nC)
g
图 7. 栅极电荷特性
图 8. 电容与漏源极电压
200
160
120
80
100
10
1
VGS = 10 V
TJ = 25 o
C
VGS = 8 V
TJ = 100 o
C
40
TJ = 150 o
C
RθJC = 0.8 oC/W
50
0
25
75
100
125
150
175
0.01
0.1
1
10
100
1000
TC, CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE (ms)
图 9. 未箝位感性开关性能
图 10. 最大连续漏电流与壳温
1000
100
10
20000
10000
SINGLE PULSE
RθJC = 0.8 oC/W
10 μs
TC = 25 o
C
THIS AREA IS
LIMITED BY rDS(on)
100 μs
1000
100
SINGLE PULSE
TJ = MAX RATED
RθJC = 0.8 oC/W
1 ms
10 ms
DC
1
CURVE BENT TO
MEASURED DATA
TC = 25 o
C
0.1
0.1
1
10
100
300
10-5
10-4
10-3
10-2
10-1
100
VDS, DRAIN to SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
图 11. 正向偏置安全工作区
图 12. 单脉冲最大功耗
www.fairchildsemi.com
4
©2015 飞兆半导体公司
FDMS86350ET80 修订版 C
典型特性 TJ = 25 °C，除非另有说明。
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
P
DM
0.05
0.02
0.01
t
1
0.1
t
2
注：
Z
(t) = r(t) x R
θJC
θJC
R
= 0.8 °C/W
θJC
SINGLE PULSE
10-4
峰值 T = P
占空比 D = t / t
x Z (t) + T
θJC C
J
DM
1
2
0.01
10-5
10-3
10-2
10-1
1
t, RECTANGULAR PULSE DURATION (sec)
图 13. 结到壳瞬态热响应曲线
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5
©2015 飞兆半导体公司
FDMS86350ET80 修订版 C
5.10
4.90
A
4.42
3.81
PKG
C
L
B
7
6
5
8
8
5
1.14
KEEP OUT AREA
3.65
6.25
5.90
C
PKG
L
6.61
4.79
1.27
1
4
PIN #1
IDICATOR
TOP VIEW
SIDE VIEW
1
2
1.27
3
4
0.61
SEE
DETAIL A
3.81
5.10
LAND PATTERN
RECOMMENDATION
3.81
1.27
0.10
C A B
0.47
0.37
(0.38)
(8X)
1
4
(0.35)
0.65
0.55
NOTES: UNLESS OTHERWISE SPECIFIED
A) PACKAGE STANDARD REFERENCE:
JEDEC MO-240, ISSUE A, VAR. AA,
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE BURRS
OR MOLD FLASH. MOLD FLASH OR
PIN #1
INDICATOR
4.66
4.46
BURRS DOES NOT EXCEED 0.10MM.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M-2009.
E) IT IS RECOMMENDED TO HAVE NO TRACES
OR VIAS WITHIN THE KEEP OUT AREA.
F) DRAWING FILE NAME: PQFN08JREV3.
8
5
0.70
4.33
4.13
BOTTOM VIEW
0.10 C
1.10
0.90
0.08 C
C
0.05
0.00
0.25
0.15
SEATING
PLANE
SCALE: 2:1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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