FDMS86368-F085 [ONSEMI]
N 沟道 PowerTrench® MOSFET 80V，80 A，4.5mΩ;
| 型号： | FDMS86368-F085 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道 PowerTrench® MOSFET 80V，80 A，4.5mΩ |
| 文件： | 总7页 (文件大小：413K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – N-Channel,
POWERTRENCH)
V
R
MAX
I MAX
D
DSS
DS(ON)
80 V
4.5 mW @ 10 V
80 A
80 V, 80 A, 4.5 mW
ELECTRICAL CONNECTION
FDMS86368-F085
Features
• Typical R
• Typical Q
= 3.7 mW at V = 10 V, I = 80 A
GS D
DS(on)
= 57 nC at V = 10 V, I = 80 A
g(tot)
GS
D
• UIS Capability
• AEC−Q101 Qualified
• These Devices are Pb−Free and are RoHS Compliant
N−Channel MOSFET
Applications
Top
Bottom
D
D
• Automotive Engine Control
• PowerTrain Management
• Solenoid and Motor Drivers
• Integrated Starter/Alternator
• Primary Switch for 12 V Systems
D
D
G
S
S
S
Pin 1
DFNW8
CASE 507AU
MOSFET MAXIMUM RATINGS (T = 25°C, Unless otherwise specified)
J
Symbol
Parameter
Drain to Source Voltage
Gate to Source Voltage
Ratings
80
Unit
V
MARKING DIAGRAM
V
DSS
V
GS
20
V
I
D
Drain Current (T = 25°C)
A
C
Continuous (V = 10 V) (Note 1)
80
GS
ON
AYWWWL
Pulsed
(see Fig. 124)
FDMS
86368
E
AS
Single Pulse Avalanche Energy
(Note 2)
82
mJ
P
D
Power Dissipation
Derate above 25°C
214
1.43
W
W/°C
A
Y
= Assembly Location
= Year
= Work Week
= Assembly Lot
= Device Code
= Device Code
T , T
Operating and Storage
Temperature
−55 to +175
°C
J
STG
JC
WW
WL
FDMS
86368
R
R
Thermal Resistance
(Junction to case)
0.7
50
°C/W
°C/W
θ
Maximum Thermal Resistance
(Junction to Ambient) (Note 3)
θ
JA
(Note: Microdot may be in either location)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Current is limited by bondwire configuration.
ORDERING INFORMATION
2. Starting T = 25°C, L = 40 μH, I = 64 A, V = 80 V during inductor charging
J
AS
DD
†
Device
Package
Shipping
and V = 0 V during time in avalanche.
DD
3. R
is the sum of the junction−to−case and case−to−ambient thermal
θ
JA
FDMS86368−F085
DFNW8
(Power56)
(Pb−Free)
3000 /
Tape & Reel
resistance where the case thermal reference is defined as the solder
mounting surface of the drain pins. R
is guaranteed by design while R
θ
JA
θ
JC
is determined by the board design. The maximum rating presented here is
2
based on mounting on a 1 in pad of 2oz copper.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
October, 2021 − Rev. 4
FDMS86368−F085/D
FDMS86368−F085
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
OFF CHARACTERISTICS
B
VDSS
Drain−to−Source Breakdown
Voltage
I
D
= 250 mA, V = 0 V
80
V
GS
I
Drain−to−Source Leakage
V
DS
V
DS
V
GS
= 80 V, V = 0 V, T = 25°C
1
mA
mA
nA
DSS
GS
J
Current
= 80 V, V = 0 V, T = 175°C (Note 4)
1
GS
J
I
Gate−to−Source Leakage
Current
=
20 V
100
GSS
ON CHARACTERISTICS
V
GS(th)
Gate to Source Threshold
Voltage
V
GS
= V , I = 250 mA
2.0
3.0
4.0
V
DS
D
R
Drain to Source On Resistance
I
I
= 80 A, V = 10 V, T = 25°C
3.7
7.4
4.5
9.0
mW
DS(on)
D
GS
J
= 80 A, V = 10 V, T = 175°C (Note 4)
D
GS
J
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 40 V, V = 0 V, f = 1 MHz
4350
636
20
pF
iss
DS
GS
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
Gate Resistance
rss
R
f = 1 MHz
2.5
57
W
g
Q
Total Gate Charge
V
= 0 V to 10 V
= 0 V to 2 V
V
DD
= 64 V, I = 80 A
75
60
59
nC
g(ToT)
GS
GS
D
Q
Threshold Gate Charge
Gate−to−Source Gate Charge
Gate−to−Drain “Miller” Charge
V
8
g(th)
Q
23
gs
Q
11
gd
SWITCHING CHARACTERISTICS
t
on
Turn−On Time
Turn−On Delay
Rise Time
V
DD
= 40 V, I = 80 A, V = 10V, R = 6 W
GEN
ns
D
GS
t
t
23
22
32
13
d(on)
t
r
Turn−Off Delay
Fall Time
d(off)
t
f
t
off
Turn−Off Time
DRAIN−SOURCE DIODE CHARACTERISTICS
V
Source−to−Drain Diode
Voltage
I
I
= 80 A, V = 0 V
1.25
1.2
V
SD
SD
SD
GS
= 40 A, V = 0 V
GS
t
Reverse−Recovery Time
Reverse−Recovery Charge
I = 80 A, DI /Dt = 100 A/ms, V = 64 V
58
49
75
67
ns
rr
F
SD
DD
Q
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTE:
4. The maximum value is specified by design at T = 175°C. Product is not tested to this condition in production.
J
www.onsemi.com
2
FDMS86368−F085
TYPICAL CHARACTERISTICS
1.2
1.0
0.8
0.6
0.4
0.2
0.0
200
175
Current Limited
by Package
V
= 10 V
GS
150
125
100
75
Current Limited
by Silicon
50
25
0
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
200
T , CASE TEMPERATURE (°C)
C
T , CASE TEMPERATURE (°C)
C
Figure 1. Normalized Power Dissipation vs.
Case Temperature
Figure 2. Maximum Continuous Drain Current
vs. Case Temperature
2
Duty Cycle − Descending Order
1
D = 0.50
0.20
0.10
0.05
0.02
P
DM
t
0.01
1
0.1
t
2
Notes:
Duty Factor: D = t /t
1
2
Single Pulse
0.01
Peak T = P
x Z
x R
+ T
JC C
q
q
J
DM
JC
−5
−4
−3
−2
−1
0
1
10
10
10
10
10
10
10
t, RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
1000
T
= 25°C
C
V
GS
= 10 V
For temperatures above 25°C
derate peak current as follows:
175 * TC
Ǹ
I + I
ƪ ƫ
2
150
100
10
Single Pulse
10
−5
−4
−3
−2
−1
0
1
10
10
10
10
10
10
t, RECTANGULAR PULSE DURATION (s)
Figure 4. Peak Current Capability
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3
FDMS86368−F085
TYPICAL CHARACTERISTICS
500
1000
100
10
If R = 0
=(L)(I )/(1.3*Rated BV
t
− V
)
AV
AS
DSS
DD
If R ≠ 0
=(L/R)In[(I *R)/(1.3*Rated BV
t
− V )+1]
DD
AV
AS
DSS
100
10
1
100 ms
Operation in this
area may be
Starting T = 25°C
J
1
limited by R
DS(on)
1 ms
10 ms
100 ms
Starting T = 150°C
J
Single Pulse
0.1
T
T
= 25°C
= Max Rated
C
J
0.01
100
0.001
0.01
1
10
t , TIME IN AVALANCHE (ms)
AV
1000
0.1
0.1
1
10
100
500
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to onsemi Application Notes
AN7514 and AN7515
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching
Capability
300
250
200
150
100
50
300
100
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
V
GS
= 0 V
V
DD
= 5 V
10
1
T = 175°C
J
T = 25°C
J
T = 175°C
J
T = −55°C
J
T = 25°C
J
0
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
3
4
5
6
7
8
9
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Forward Diode Characteristics
300
250
200
150
100
50
300
250
200
150
100
50
V
GS
80 ms Pulse Width
V
GS
15 V Top
10 V
8 V
7 V
6 V
T
= 175°C
15 V Top
10 V
8 V
7 V
6 V
J
5.5 V
5 V Bottom
5.5 V
5 V Bottom
80 ms Pulse Width
T
= 25°C
J
5 V
5 V
0
0
0
1
2
3
4
5
0
1
2
3
4
5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Saturation Characteristics
Figure 10. Saturation Characteristics
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4
FDMS86368−F085
40
30
2.2
I
= 80 A
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
D
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
T = 25°C
T = 175°C
J
J
20
10
0
I
D
= 80 A
V
GS
= 10 V
−80
0
40
160 200
−40
80
120
4
5
6
7
8
9
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE (°C)
J
Figure 12. Normalized RDS(on) vs. Junction
Temperature
Figure 11. RDS(on) vs. Gate Voltage
1.10
1.05
1.00
0.95
0.90
1.4
1.2
1.0
0.8
0.6
0.4
0.2
I
= 5 mA
D
V
= V
GS
= 250 μA
GS
I
D
−80
−40
0
40
80
120
160
200
−80
−40
0
40
80
120
160
200
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 14. Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
Figure 13. Normalized Gate Threshold Voltage
vs. Temperature
10
8
10000
V
DD
= 32 V
I
D
= 80 A
C
iss
V
DD
= 40 V
1000
100
10
V
DD
= 48 V
6
C
oss
4
C
rss
2
f = 1 Mhz
= 0 V
V
GS
0
1
0.1
1
10
100
0
10
20
30
40
50
60
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE (nC)
g
Figure 15. Capacitance vs. Drain to Source Voltage
Figure 16. Gate Charge vs. Gate to Source Voltage
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5
FDMS86368−F085
PACKAGE DIMENSIONS
DFNW8 5.2x6.3, 1.27P
CASE 507AU
ISSUE A
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6
FDMS86368−F085
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries
in the United States and/or other countries.
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
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For additional information, please contact your local Sales Representative
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◊
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