FDMS8670S_技术文档

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October 2014

FDMS8670S

N-Channel PowerTrench^®SyncFET^TMꢀ

tm

30V, 42A, 3.5m:

Features

General Description

The FDMS8670S has been designed to minimize losses in

power conversion application. Advancements in both silicon and

package technologies have been combined to offer the lowest

r_DS(on)while maintaining excellent switching performance. This

device has the added benefit of an efficient monolithic Schottky

body diode.

Max r_DS(on)= 3.5m: at V_GS= 10V, I_D= 20A

Max r_DS(on)= 5.0m: at V_GS= 4.5V, I_D= 17A

Advanced Package and Silicon combination for low r_DS(on)

and high efficiency

SyncFET Schottky Body Diode

MSL1 robust package design

RoHS Compliant

Application

Synchronous Rectifier for DC/DC Converters

Notebook Vcore/ GPU low side switch

Networking Point of Load low side switch

Telecom secondary side rectification

Top

Bottom

Pin 1

S

G

S

D

5

6

7

8

4

3

2

1

S

G

D

Power 56

MOSFET Maximum Ratings ^T_A= 25°C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

30

V

20

Drain Current -Continuous (Package limited)

-Continuous (Silicon limited)

ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ -Continuous (Silicon limited)

-Continuous

T_C= 25°C

T_C= 100°C

T_A= 25°C

42

116

I_D

74

A

20

-Pulsed

200

Power Dissipation

T_C= 25°C

T_A= 25°C

T_A= 85°C

78

P_D

Power Dissipation

(Note 1a)

2.5

W

Power Dissipation

1.3

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_TJC

R_TJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

1.6

50

°C/W

(Note 1a)

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tape Width

12mm

Quantity

FDMS8670S

Power 56

13’’

3000 units

1

FDMS8670S Rev.C6

www.fairchildsemi.com

Electrical Characteristics ^T_J^{= 25°C unless otherwise noted}

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BV_DSS

Drain to Source Breakdown Voltage

I_D= 1mA, V_GS= 0V

30

V

'BV_DSS

ꢀꢀꢀ'T_J

Breakdown Voltage Temperature

Coefficient

I_D= 10mA, referenced to 25°C

17

mV/°C

I_DSS

I_GSS

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

V_DS= 24V, V_GS= 0V

500

100

PA

nA

V_GS

=

20V, V_DS= 0V

On Characteristics

V_GS(th)

Gate to Source Threshold Voltage

V_GS= V_DS, I_D= 1mA

1

1.5

3

V

ꢀ'V_GS(th)

ꢀꢀꢀ'T_J

Gate to Source Threshold Voltage

Temperature Coefficient

I_D= 50mA, referenced to 25°C

-2.8

mV/°C

V

_GS= 10V, I_D= 20A

2.8

3.6

3.9

98

3.5

5.0

6.0

r_DS(on)

Drain to Source On Resistance

Forward Transconductance

V_GS= 4.5V, I_D= 17A

m:

V_GS= 10V, I_D= 20A ,T_J= 125°C

V_DS= 10V, I_D= 20A

g_FS

S

Dynamic Characteristics

C_iss

C_oss

C_rss

R_g

Input Capacitance

3005

865

320

1.4

4000

1150

480

pF

:

V_DS= 15V, V_GS= 0V

f = 1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

f = 1MHz

5.0

Switching Characteristics

t_d(on)

t_r

t_d(off)

t_f

Turn-On Delay Time

Rise Time

14

19

37

10

52

24

8

26

35

60

20

73

34

ns

V_DD= 15V, I_D= 20A

_GS= 10V, R_GEN= 5:

V

Turn-Off Delay Time

Fall Time

ns

Q_g(TOT)

Q_g(4.5V)

Q_gs

Total Gate Charge at 10V

Total Gate Charge at 4.5V

Gate to Source Gate Charge

Gate to Drain “Miller” Charge

V_GS= 0V to 10V

V_GS= 0V to 4.5V

nC

V_DS= 15V

I_D= 20A

Q_gd

10

Drain-Source Diode Characteristics

V_SD

t_rr

Source to Drain Diode Forward Voltage

Reverse Recovery Time

V_GS= 0V, I_S= 2A

0.4

26

24

0.7

42

39

V

ns

nC

I_F= 20A, di/dt = 300A/Ps

Q_rr

Reverse Recovery Charge

Notes:

1:

2

R

is determined with the device mounted on a 1in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

is guaranteed by design while R is determined by

TCA

TJA

the user's board design.

TJC

b. 125°C/W when mounted on

minimum pad of 2 oz copper

a

a. 50°C/W when mounted on

2

a 1 in pad of 2 oz copper

2: Pulse time < 300Ps, Duty cycle < 2%.

www.fairchildsemi.com

2

FDMS8670S Rev.C6

Typical Characteristics ^T_J^{= 25°C unless otherwise noted}

180

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

PULSE DURATION = 80Ps

DUTY CYCLE = 0.5%MAX

PULSE DURATION = 80Ps

DUTY CYCLE = 0.5%MAX

V

= 10V

GS

150

120

90

60

30

0

V_GS= 3V

V

= 3.5V

V

= 4.5V

GS

V_GS= 3.5V

V

= 4V

GS

V_GS= 4V

V_GS= 4.5V

V

= 3V

GS

V_GS= 10V

0

1

2

3

4

0

30

60

90

120

150

180

V , DRAIN TO SOURCE VOLTAGE (V)

DS

I , DRAIN CURRENT(A)

D

Figure 1. On Region Characteristics

Figure2. N o r m a l i z e d O n - R e s i s ta n c e

vs Drain Current and Gate Voltage

10

1.8

PULSE DURATION = 80Ps

DUTY CYCLE = 0.5%MAX

I_D= 20A

I

D

= 20A

V_GS= 10V

1.6

1.4

1.2

1.0

0.8

0.6

8

6

4

2

T = 125^oC

J

T

= 25^oC

5

J

3

4

6

7

8

9

10

-75 -50 -25

0

25 50 75 100 125 150

T_J, JUNCTION TEMPERATURE (^oC)

V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 3. Normalized On Resistance

vs Junction Temperature

Figure4. On-Resistance vs Gate to

Source Voltage

20

150

10

1

V

= 0V

GS

PULSE DURATION = 80Ps

DUTY CYCLE = 0.5%MAX

120

T = 125^oC

J

90

60

T

J

= 25^oC

0.1

T

J

= 125^oC

T

= 25^oC

J

T

J

= -55^oC

0.01

30

0

T

= -55^oC

J

1E-3

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

1

2

3

4

V , BODY DIODE FORWARD VOLTAGE (V)

SD

V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure6. Source to Drain Diode

Forward Voltage vs Source Current

www.fairchildsemi.com

3

FDMS8670S Rev.C6

Typical Characteristics ^T_J^{= 25°C unless otherwise noted}

10

8

5000

1000

C

iss

V

= 10V

DD

6

4

2

0

V

= 15V

DD

V

= 20V

DD

C

oss

C

rss

f = 1MHz

= 0V

V

GS

100

0.1

30

1

10

0

10

20

30

40

50

60

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Q , GATE CHARGE(nC)

g

Figure 7. Gate Charge Characteristics

Figure8. C a p a c i t a n c e v s D r a i n

to Source Voltage

120

100

80

60

40

20

0

40

V

= 10V

GS

10

T_J= 25^oC

V

GS

= 4.5V

T_J= 125^oC

Limited by Package

R

TJC

= 1.6^oC/W

50

1

0.01

0.1

1

10

100

1000

25

75

100

125

150

T_C, CASE TEMPERATURE (^oC)

t_AV, TIME IN AVALANCHE(ms)

Figure9. U n c l a m p e d I n d u c t i v e

Switching Capability

Figure10. Maximum Continuous Drain

Current vs Case Temperature

300

100

500

100us

FOR TEMPERATURES

o

ABOVE 25 C DERATE PEAK

V_GS= 10V

100

10

CURRENT AS FOLLOWS:

1ms

10

1

150 – T

A

----------------------

125

10ms

100ms

I = I

25

o

T

= 25 C

OPERATION IN THIS

AREA MAY BE

A

1s

0.1

LIMITED BY r_DS(on)

10s

DC

SINGLE PULSE

= MAX RATED

O

0.01

T

J

SINGLE PULSE

T

= 25 C

1

A

1E-3

0.6

10^-3

10^-2

10^-1

t, PULSE WIDTH (s)

10⁰

10¹

10²

10³

80

0.1

1

10

V

DS

, DRAIN to SOURCE VOLTAGE (V)

Figure 11. Forward Bias Safe

Operating Area

Figure12. Single Pulse Maximum

Power Dissipation

www.fairchildsemi.com

4

FDMS8670S Rev.C6

Typical Characteristics ^T_J^{= 25°C unless otherwise noted}

2

DUTY CYCLE-DESCENDING ORDER

1

D = 0.5

0.2

0.1

0.05

0.1

0.02

0.01

P

DM

t

1

0.01

t

2

NOTES:

DUTY FACTOR: D = t /t

1

2

SINGLE PULSE

10^-2

PEAK T = P

J

x Z

x R

+ T

TJA A

DM

TJA

1E-3

10^-3

10^-1

10⁰

10¹

10²

10³

t, RECTANGULAR PULSE DURATION (s)

Figure 13. Transient Thermal Response Curve

www.fairchildsemi.com

5

FDMS8670S Rev.C6

Typical Characteristics ^(continued)

SyncFET Schottky body diode

Characteristics

Schottky barrier diodes exhibit significant leakage at high tem-

perature and high reverse voltage. This will increase the power

in the device.

Fairchild’s SyncFET process embeds a Schottky diode in parallel

with PowerTrench MOSFET. This diode exhibits similar

characteristics to a discrete external Schottky diode in parallel

with a MOSFET. Figure 14 shows the reverses recovery

characteristic of the FDMS8670S.

0.1

= 125^oC

o

T

A

T_J= 125 C

T_J= 125^oC

0.01

o

= 100 C

T

=T10=01C00 C

T

A

J

1E-3

o

1E-4

o

T_J= 25 C

T

A

= 25^oC

1E-5

0

5

10

15

20

25

30

0

5

20

25

30

0

5

10

VVDS,, RREEVVEERRSSEEVVOOLLTTAAGGEE(V()V)

V^D_D^S_S, REVERSE VOLTAGE (V)

15

TIME: 12.5nS/Div

Figure 15. SyncFET Body Diode reverse

leakage vs drain to source voltage

Figure 14. FDMS8670S SyncFET Body

Diode reverse recovery characteristics

www.fairchildsemi.com

6

FDMS8670S Rev.C6

PQFN8 5X6, 1.27P

CASE 483AE

ISSUE A

5.10

3.91

5.10

PKG

A

SEE

DETAIL B

1.27

6.61

C

L

B

8

7

6

5

8

5

0.77

4.52

3.75

5.85

5.65

C

PKG

6.15

L

KEEP OUT

AREA

1.27

1

4

1

2

3

4

TOP VIEW

0.61

1.27

3.81

LAND PATTERN

RECOMMENDATION

OPTIONAL DRAFT

ANGLE MAY APPEAR

ON FOUR SIDES

SEE

DETAIL C

5.00

4.80

OF THE PACKAGE

0.35

0.15

ꢀꢁꢂꢃ

0.10 C

0.30

0.05

0.00

SIDE VIEW

ꢀꢁꢂꢃ

8X

0.08 C

C

0.35

0.15

5.20

4.80

1.10

0.90

SEATING

PLANE

DETAIL C

DETAIL B

SCALE: 2:1

3.81

SCALE: 2:1

1.27

0.51

(8X)

0.31

NOTES: UNLESS OTHERWISE SPECIFIED

(0.34)

A. PACKAGE STANDARD REFERENCE: JEDEC MO-240,

ISSUE A, VAR. AA,.

0.10

C A B

1

2

3

4

B. DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH.

MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM.

C. ALL DIMENSIONS ARE IN MILLIMETERS.

0.76

0.51

(0.52)

D. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-2009.

E. IT IS RECOMMENDED TO HAVE NO TRACES OR

VIAS WITHIN THE KEEP OUT AREA.

6.25

5.90

+0.30

3.48

-0.10

(0.50)

(0.30)

(2X)

8

7

6

5

ꢀꢄꢅꢅꢀꢄꢂꢀ

+0.10

-0.15

0.20

(8X)

3.96

3.61

BOTTOM VIEW

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

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1


型号：	FDMS8670S
厂家：	ONSEMI
描述：	N 沟道，PowerTrench® SyncFET™ MOSFET，30V，42A，3.5mΩ 开关脉冲光电二极管晶体管
文件：	总9页 (文件大小：395K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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