FDMT800100DC [ONSEMI]

N 沟道 Dual Cool™ 88 PowerTrench® MOSFET 100 V、162 A、2.95 mΩ;


型号：	FDMT800100DC
厂家：	ONSEMI
描述：	N 沟道 Dual Cool™ 88 PowerTrench® MOSFET 100 V、162 A、2.95 mΩ 开关脉冲光电二极管晶体管
文件：	总9页 (文件大小：623K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DATA SHEET

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MOSFET - N-Channel,

DUAL COOL⁾88,

POWERTRENCH⁾

MAX

I MAX

DS(ON)

100 V

2.95 mW @ 10 V

4.46 mW @ 6 V

162 A

100 V, 162 A, 2.95 mW

FDMT800100DC

᭢ᫀ

ꢁ

ꢀ

TDFNW8 8.3 x 8.4, 2P,

DUAL COOL, OPTION 2

CASE 507AR

ꢀꢁN ꢂᬣꢁMOSFET Თ✈ꢁonsemi ꢃ᪫ŔꢁPOWERTRENCH ꢄ

ൊ⛿ꢅ。ꢃ᪫Ŕ̕

ᑠᤏ٬ꢁ

DUAL COOL ෡᎕ᑠᤏ൬ਫ਼ቝ

ई

ᖰŻᣠ෯ꢁr

͓ሇ்。

៖᫪᪗ᥡĮŔণೃ▏੣⋍ℋƽᓡԳᡚŔრ

DS(on)

MARKING DIAGRAM

ꢂꢃꢀ1

⑙ꢀ

•ꢆᣠଇȜ r

= 2.95 mW (V = 10 V、ꢁI = 24 A)

DS(on)

= 4.46 mW (V = 6 V、ꢁI = 19 A)

•ꢆĮ r

▨ᜨŔꢃ᪫̕෡᎕

DS(on)

•ꢆ⛻⛰Ãꢃ᪫ĳlᥡ

ᑠᤏ, ✃ꢇᨿቂ૭ᚎᙱ

•ꢆၔ५ 8 x 8 mm MLP ෡᎕

•ꢆMSL1 ᄚɅ෡᎕ᚎᙱ

800100 AWLYW

•ꢆ100% ট᪗ UIL Ἣᚥ

800100 = Device Code

•ꢆꢀ

ࡈ

Ö⛽

ᾕ,ꢈꢉ,

RoHS ꢊꢋ

= Assembly Location

= Wafer Lot

= Year

= Work Week

ꢁ✈

•ꢆOringFET / ៯ᩍრ͓

•ꢆ

ꢌꢍꢎ

•ꢆDC−DC ᨼꢏ

ELECTRICAL CONNECTION

N-Channel MOSFET

ORDERING INFORMATION

See detailed ordering, marking and shipping information on

page 7 of this data sheet.

Publication Order Number:

November, 2022 − Rev. 2

FDMT800100DCCN/D

FDMT800100DC

MOSFET ꢂꢃ⍭ꢄꢅ (T = 25°C, ꢄꢅꢁꢆꢇꢈ)

ꢆ

ꢉꢊ

ꢇꢈ

ꢉꢊꢀ—ꢀꢋꢊꢌꢂ

ꢍꢊꢀ—ꢀꢋꢊꢌꢂ+

ꢉꢊꢌꢎ

100

162

-ꢀꢏꢐ

-ꢀꢑꢃ

-ꢀꢏꢐ

= 25°C

(Ỉ 5)

(Ỉ 1a)

(Ỉ 4)

(Ỉ 3)

= 100°C

102

T = 25°C

-ꢀꢒꢓꢌꢎ

989

ꢄꢑꢃꢒꢓꢔꢕ

ѿ૧

1536

156

= 25°C

ѿ૧

T = 25°C

(Ỉ 1a)

3.2

T , T

ꢖꢅꢆꢇꢗꢘꢙꢚꢈ

−55 ꢛ +150

°C

STG

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

(ꢉꢜꢝꢞ)

ꢟꢠꢌꢂꢡꢢꢣꢤꢥꢦꢊꢧꢋꢌꢍꢨꢊꢚꢈ，ꢎꢏꢐꢔꢑᔿꢒ。ꢟꢠꢡꢢÛĵ᪩{℠ꢊ，෦ៀẵꢇᚑꢎꢏѿꢔ，ꢐꢔꢑොೄꢎꢏᔿꢒ，ᅑ

ꢐ∰ሇ。

⋍⑙ꢀ

ꢆ

ꢉꢊ

ꢇꢈ

ꢘꢛ૶૓⋍ℋ

ꢘꢛ▏੣⋍ℋ

(ꢀ᮸ꢋꢊ)

(ꢁ᮸ꢋꢊ)

(Ỉ 1a)

1.6

0.8

°C/W

(Ỉ 1b)

(Ỉ 1i)

(Ỉ 1j)

(Ỉ 1k)

www.onsemi.cn

FDMT800100DC

ꢀᷴ⑙ꢀ (T = 25°C, ꢄꢅꢁꢆꢇꢈ)

ꢆ

ꢇꢈ

Ἣᚥꢋꢌ

ꢂꢍꢅ ꢎꢏꢅ ꢂꢃꢅ

ꢉꢊ

ꢐꢑ⑙ꢀ

ꢉꢊ－ꢋꢊϛꢩꢌꢂ

= 250 mA, V = 0 V

100

−

DSS

ϛꢩꢌꢂꢙꢪꢫꢬ

= 250 mA, ꢉꢜ 25°C

−

mV/°C

DBV_DSS

DT_J

ꢭꢍꢊꢌꢂꢉꢊꢌꢎ

= 80 V, V

= 0 V

−

DSS

GSS

ꢍꢊ－ꢋꢊꢉꢌꢎ

20 V, V

100

ꢒ᫪⑙ꢀ

ꢍꢊꢛꢋꢊꢮꢊꢌꢂ

= V , I = 250 mA

2.0

2.8

4.0

GS(th)

ꢍꢊꢛꢋꢊꢮꢊꢌꢂꢙꢪꢫꢬ

= 250 mA, ꢉꢜ 25°C

−

−11

−

mV/°C

DV_GS(th)

DT_J

ꢉꢊꢛꢋꢊꢯꢰොꢱꢌℋ

= 10 V, I = 24 A

−

2.3

3.5

4.2

2.95

4.46

5.39

−

DS(on)

= 6 V, I = 19 A

= 10 V, I = 24 A, T = 125°C

ꢲ

ꢳො

= 5 V, I = 24 A

ꢓꢔ⑙ꢀ

ꢴͅꢌꢵ

= 50 V, V = 0 V, f = 1 MHz

−

5595

1160

7835

1625

iss

ꢴꢍꢌꢵ

oss

Āꢴꢌꢵ

ꢍꢊℋꢶ

−

rss

0.1

1.4

3.5

ꢕꢐ⑙ꢀ

ොꢱꢷꢸꢹꢺ

⛺ԧꢹꢺ

= 50 V, I = 24 A,

−

111

−

d(on)

= 10 V, R

= 6 W

GEN

͓ꢻꢷꢸꢹꢺ

⛻ꢼꢹꢺ

d(off)

ꢽꢍꢊꢌꢾ

= 0 V ꢛ 10 V, V = 50 V, I = 24 A

DD D

g(TOT)

= 0 V ꢛ 6 V, V = 50 V, I = 24 A

ꢍꢊ－ꢋꢊꢌꢾ

= 50 V, I = 24 A

ꢍꢊ－ꢉꢊꢀ“ꢿҲ” ꢌꢾ

−

⃯ꢖꢗ− ⁰ꢖꢘꢖ

⑙ꢀ

ꢋꢊ－ꢉꢊlꢊꣀꢲ

ꢌꢂ

−

0.7

0.8

1.1

1.2

= 0 V, I = 2.9 A

(ꣁ 2)

= 0 V, I = 24 A

ꣂꣃꢹꢺ

ꣂꣃꢌꢾ

I = 24 A, di/dt = 100 A/ms

114

151

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

(ꢉꢜꢝꢞ)

ꢄꢅꢁꢆꢇꢈ，“ꢌ꣄ꣅሇ”ꢧ꣆ꢋꢌꢍꢨ꣇꣈ꢌ꣉꣊꣋ꢏ⛻ꢨ

ሇꢔꢉꢬ。ꢟꢠई⛽

꣋ꢏ⛻꣌꣍，

ሇꢔꢐꢔ⛾“ꢌ꣄ꣅሇ”ꢧ꣆

ꢋ꣈ꢌሇꢔꢉꢬ⛽⛰ೄ。

www.onsemi.cn

FDMT800100DC

⋍⑙ꢀ

ꢆ

ꢉꢊ

ꢇꢈ

1.6

0.8

°C/W

ꢘꢛ૶૓⋍ℋ

ꢘꢛ▏੣⋍ℋ

(ꢀ᮸ꢋꢊ)

(ꢁ᮸ꢋꢊ)

(Ỉ 1a)

(Ỉ 1b)

(Ỉ 1c)

(Ỉ 1d)

(Ỉ 1e)

(Ỉ 1f)

(Ỉ 1g)

(Ỉ 1h)

(Ỉ 1i)

(Ỉ 1j)

(Ỉ 1k)

(Ỉ 1l)

ꣁ:

1. R

ꢱꢢ꣎꣏ई FR-4 ꢌ꣐꣑⛺ꢨꢎꢏ꣒ꢦ，꣓ꢌ꣐꣑ş꣔꣕ꢦꢨ 2 oz ꣖꣗꣘，ꢟ⛻

ࣞ

꣈꣙。R

꣚꣔꣛ꢨꢌ꣐꣑꣜꣝꣒ꢦ。

a) 38°C/Wꢀ(꣎꣏nꢀa 1ꢀ꣞꣟꣠

꣡ꢀ2 ozꢀ꣖꣗꣘)

b) 81°C/W (꣎꣏nꢣ꣢ꢀ2 ozꢀ꣖꣗꣘)

c) ꢯ꣄꣣꣤, 20.9 × 10.4 × 12.7 mm ꣥꣦꣧⋍ꢎ, 1 ꣞꣟꣠꣡ 2 oz ꣖꣗꣘

d) ꢯ꣄꣣꣤, 20.9 × 10.4 × 12.7 mm ꣥꣦꣧⋍ꢎ, ꢣ꣢ 2 oz ꣖꣗꣘

e) ꢯ꣄꣣꣤, 45.2 × 41.4 × 11.7 mm Aavid Thermalloy ꢎꢏ

10−L41B−11 ꣧⋍ꢎ, 1 ꣞꣟꣠꣡ 2 oz ꣖꣗꣘

f) ꢯ꣄꣣꣤, 45.2 × 41.4 × 11.7 mm Aavid Thermalloy ꢎꢏ

10−L41B−11 ꣧⋍ꢎ, ꢣ꣢ 2 oz ꣖꣗꣘

g) 200FPM ꣄ꢎ, ៀ꣧⋍ꢎ, 1 ꣞꣟꣠꣡ 2 oz ꣖꣗꣘

h) 200FPM ꣄ꢎ, ៀ꣧⋍ꢎ, ꢣ꣢^ꢀ2 oz ꣖꣗꣘

i) 200FPM ꣄ꢎ, 20.9 × 10.4 × 12.7 mm ꣥꣦꣧⋍ꢎ, 1 ꣞꣟꣠꣡ 2 oz ꣖꣗꣘

j) 200FPM ꣄ꢎ, 20.9 × 10.4 × 12.7 mm ꣥꣦꣧⋍ꢎ, ꢣ꣢^ꢀ2 oz ꣖꣗꣘

k) 200FPM ꣄ꢎ, 45.2 × 41.4 × 11.7 mm Aavid Thermalloy ꢎꢏ

10−L41B−11 ꣧⋍ꢎ, 1 ꣞꣟꣠꣡ 2 oz ꣖꣗꣘

ꢓ) 200FPM ꣄ꢎ, 45.2 × 41.4 × 11.7 mm Aavid Thermalloy ꢎꢏ

10−L41B−11 ꣧⋍ꢎ, ꢣ꣢ 2 oz ꣖꣗꣘

2. ꢑꢃ꣉꣊: ꢑꢃ꣨ꢪ: < 300 ms, Հ꣤꣩: < 2.0%。

3. E ꢔ1536 mJ, ৚n꣪꣫ T = 25°C; N−ch: L = 3 mH、I = 32 A、V = 100 V、V = 10 V。100% test at (L = 0.1 mH, I = 101 A。)

4. ꢆ͓ꢑꢃ꣬

ꢨ꣭꣮꣯꣰, ꣱ꢉꢜ

ࣞ

11 ꢋꢨ SOA

ࣞ

ꣲ。

5. ꣝ꣳꣴАꢨꢏꢐꢌꢎ¥℠nꢣꢤꢘꢙ, ꣵꣶꢏꢐꢌꢎ෦ַ℠n꣧⋍Å֪ꢌ꣄ꣷ꣸꣹꣔ꢨꢌ꣐꣑꣜꣝。

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FDMT800100DC

ꢎꢏ⑙ꢀ(T = 25°C, ꢄꢅꢁꢆꢇꢈ)

320

= 10 V

= 5 V

= 6.5 V

= 6 V

240

160

= 5.5 V

= 6 V

= 5.5 V

= 6.5 V

= 10 V

Pulse Duration = 80 ms

Duty Cycle = 0.5% Max

Pulse Duration = 80 ms

Duty Cycle = 0.5% Max

= 5 V

, Drain to Source Voltage (V)

I , Drain Current (A)

ꢙ 2. ᧧ꢜꢝꢒ᫪ꢀℋ⛾⃯ꢖꢀἡ

᧥ꢖꢀիŔꢐ

ꢙ 1. ᫪ꢔꢚꢛ⑙ꢀ

2.2

2.0

1.8

1.6

1.4

Pulse Duration = 80 ms

Duty Cycle = 0.5% Max

= 24 A

= 10 V

= 24 A

1.2

1.0

T = 125°C

0.8

0.6

T = 25°C

, Gate to Source Voltage (V)

T , Junction Temperature (5C)

ꢙ 3. ᧧ꢜꢝꢒ᫪ꢀℋ⛾ণꢁŔꢐ

ꢙ 4. ꢒ᫪ꢀℋ⛾᧥ꢖ—⁰ꢖꢀիŔꢐ

320

240

= 0 V

Pulse Duration = 80 ms

Duty Cycle = 0.5% Max

= 5 V

T = 150°C

T = 25°C

160

T = 25°C

T = −55°C

, Gate to Source Voltage (V)

, Body Diode Forward Voltage (V)

ꢙ 5. Āᩣ⑙ꢀ

ꢙ 6. ⁰ꢖ— ⃯ꢖꢘꢖ

ᵃ

ꢀի⛾⁰ꢖꢀἡŔꢐ

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FDMT800100DC

ꢎꢏ⑙ꢀ(T = 25°C, ꢄꢅꢁꢆꢇꢈ) (continued)

10000

= 24 A

= 25 V

iss

= 50 V

1000

oss

= 75 V

100

f = 1 MHz

= 0 V

rss

, Drain to Source Voltage (V)

Q , Gate Charge (nC)

ꢙ 8. ꢀ඙⛾⃯ꢖ—⁰ꢖꢀիŔꢐ

ꢙ 7. ᧥ꢖꢀ็⑙ꢀ

200

100

180

144

108

= 0.8°C/W

T = 25°C

= 10 V

T = 100°C

= 6 V

T = 125°C

T , Case Temperature (5C)

, Time in Avalanche (ms)

ꢙ 10. ꢂꢃ᪮ঽ⃯ꢖꢀἡ⛾૓ꢁŔꢐ

ꢙ 9. ∮

ꢊꢀዿꢕꢐ்ѻ

2000

1000

50000

10000

Single Pulse

= 0.8°C/W

= 25°C

10 ms

100

1000

100

This Area is

Limited by r

100 ms

DS(on)

1 ms

Single Pulse

T = Max Rated

10 ms

= 0.8°C/W

Curve Bent to

Measured Data

= 25°C

0.1

t, Pulse Width (s)

, Drain to Source Voltage (V)

ꢙ 12. ꢉꢞ௙Βꢂꢃѿ૧

ꢙ 11. ᵃ

ȯի൩͈࿅ļꢚ

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FDMT800100DC

ꢎꢏ⑙ꢀ(T = 25°C, ꢄꢅꢁꢆꢇꢈ) (continued)

Duty Cycle − Descending Order

D = 0.5

0.2

0.1

0.05

0.02

0.01

ꣁ:

0.01

(t) = r(t) x R

Single pulse

= 0.8°C/W

꣺ꢊT = P

x Z (t) + T

JC C

Հ꣤꣩ꢀD = t /t

0.001

t, Rectangular Pulse Duration (s)

ꢙ 13. ণೃ૶૓ɼꢔ⋍

ꢁᣒএ

෡᎕᧧ᚖ⛾ꢄ៽ǁ቏

ࡈ

ꢌ᧧ᚖ

†

ࡈ

ꢌ

෡᎕ᅂჯ

՗ƨꢃꢍ

᫟៮෡ဆඝႆ

Shipping

800100

FDMT800100DC

TDFNW8 8.3 x 8.4, 2P,

DUAL COOL, OPTION 2

(Pb−Free and Halide Free)

−

13.3 mm

3000ꣻ/՗

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

POWERTRENCH and DUAL COOL are registered trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries

in the United States and/or other countries.

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MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

TDFNW8 8.3x8.4, 2P, DUAL COOL, OPTION 2

CASE 507AR

ISSUE B

DATE 29 MAR 2021

GENERIC

MARKING DIAGRAM*

XXXX = Specific Device Code

= Assembly Location

WL = Wafer Lot Code

= Year Code

= Work Week Code

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “ G”,

may or may not be present. Some products

may not follow the Generic Marking.

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON95711G

TDFNW8 8.3x8.4, 2P, DUAL COOL, OPTION 2

PAGE 1 OF 1

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

FDMT800100DC [ONSEMI]

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