FDMT800150DC [ONSEMI]

N 沟道双 CoolTM 88 PowerTrench® MOSFET 150V,99A,6.5mΩ;
FDMT800150DC
型号: FDMT800150DC
厂家: ONSEMI    ONSEMI
描述:

N 沟道双 CoolTM 88 PowerTrench® MOSFET 150V,99A,6.5mΩ

文件: 总9页 (文件大小:597K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DATA SHEET  
www.onsemi.cn  
MOSFET – N-Channel,  
POWERTRENCH),  
DUAL COOL) 88  
V
r
MAX  
I MAX  
D
DS  
DS(on)  
150 V  
6.5 mW @ 10 V  
8.4 mW @ 6 V  
99 A  
150 V, 99 A, 6.5 mW  
ꢀꢁ 1  
G
ꢀꢁ 1  
S
S
S
FDMT800150DC  
S
D
᭢ᫀ  
D
D
ꢀꢁN MOSFET ꢁꢂonsemi ꢃꢄPOWERTRENCH ꢄ  
ꢅꢆꢅ。ꢃꢃꢄꢇ
ᑠᤏ٬ꢁ
DUAL COOLꢁ෡ᑠᤏ൬ꢉꢊ
ר
׏
 
D
ईᖰŻᣠ෯ r  
რ͓ሇ。  
׬
ꢋꢌᥡĮꢄꢍꢎꢏ੣⋍ƽᓡԳꢑꢄ  
DS(on)  
PQFN8 8X8, 2P  
(Dual Cool 88)  
CASE 483AQ  
ꢀ  
ꢆᣠଇȜ r  
= 6.5 mW (V = 10 V, I = 15 A)  
GS D  
DS(on)  
ꢆᣠଇȜ r  
= 8.4 mW (V = 6 V, I = 13 A)  
GS D  
DS(on)  
MARKING DIAGRAM  
ꢆĮ r  
٬
ꢃꢇꢈ  
DS(on)  
ꢆ⛻⛰Ãꢃijlᥡᑠᤏ✃ꢇቂ૭ꢖꢗ  
8x8 mm MLP ꢈ  
$Y&Z&3&K  
800150DC  
MSL1 ᄚɅ෡ꢈꢖꢗ  
100% ꢙꢌ UIL ꢚ  
800150DC = Device Code  
ꢆꢀ
Ö⛽
؋
,ꢈꢉ,
ר
 RoHS ꢊꢋ  
$Y  
&Z  
&3  
&K  
= Company Logo  
= Assembly Plant Code  
= Date Code  
✈  
OringFET / ꢝꢞრ͓  
׬
ꢌꢍꢎ  
DC−DC ꢏ  
= Traceability Code  
ELECTRICAL CONNECTION  
G
D
D
D
S
S
S
D
N-Channel MOSFET  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information on  
page 7 of this data sheet.  
© Semiconductor Components Industries, LLC, 2015  
1
Publication Order Number:  
September, 2022 − Rev. 2  
FDMT800150DCCN/D  
FDMT800150DC  
MOSFET ꢂꢃ(T = 25°C,ℴ∮ᣩᛄ៮)  
A
׶
ꢆ  
ꢇꢈ  
ꢄꢅ  
150  
ꢉꢊ  
V
V
V
⃯ᥡ⁰ᥡꢄի  
᧥ᥡ⁰ᥡꢄի  
⃯ᥡꢀἡ  
DS  
20  
V
GS  
I
D
99  
A
᪮ᖅ  
᪮ঽ  
᪮ঽ  
Β  
T
= 25°C  
(5)  
(5)  
(1a)  
(4)  
(3)  
C
T
C
= 100°C  
62  
T = 25°C  
15  
A
561  
E
AS  
ԵΒ↺༉்Ჟ  
ѿ૧  
1093  
156  
mJ  
W
P
D
T
C
= 25°C  
ѿ૧  
T = 25°C  
A
(1a)  
3.2  
T , T  
ļ٬ƽ
സণꢅී
 
−55 to +150  
°C  
J
STG  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
(֢૓ᚡᝧ)  
ୢ᥼ꢄիᡕ᪗ᣠଇ⍭ൺȜꢁϷϚŔȜ
Ö
׏
úय。ୢ᥼ᡕ᪗Ûĵ{Ȝ,෦ៀẵƽ
Öѿ்,
׏
úොೄ
Ö,ᅑ
ڭ
 
׏
∰ሇ。  
⋍⑙ꢀ  
׶
ꢆ  
ꢇꢈ  
ꢄꢅ  
1.6  
0.8  
38  
ꢉꢊ  
°C/W  
R
ণೃ૶⋍ℋ  
ণೃ૶⋍ℋ  
ণೃ▏⋍ℋ  
ꢍꢎꢏ੣⋍ꢐ  
ꢍꢎꢏ੣⋍ꢐ  
ꢍꢎꢏ੣⋍ꢐ  
ꢍꢎꢏ੣⋍ꢐ  
(ꢠꢡꢐᥡ)  
(ꢐᥡ)  
(1a)  
q
JC  
q
JC  
q
JA  
q
JA  
q
JA  
q
JA  
q
JA  
R
R
R
R
R
R
(1b)  
81  
(1i)  
15  
(1j)  
21  
(1k)  
9
www.onsemi.cn  
2
FDMT800150DC  
ꢀᷴ⑙(T = 25°C,ℴ∮ᣩᛄ៮)  
J
׶
ꢆ  
ꢇꢈ  
Ἣᚥꢋꢌ  
ꢂꢍꢅ ꢎꢏꢅ ꢂꢃꢅ  
ꢉꢊ  
ꢐꢑꢀ  
BV  
⃯ᥡ-⁰ᥡϛՏꢄի  
I
I
= 250 mA, V = 0 V  
GS  
150  
V
DSS  
D
ϛՏꢄիꢅႆ
ߋ
ᝐ  
= 250 mA֢25°C  
110  
mV/°C  
DBVDSS  
DTJ  
D
I
⇆᧥ᥡꢄի⃯ᥡꢄἡ  
᧥ᥡ-⁰ᥡ⃯ꢄἡ  
V
V
= 120 V, V  
= 0 V  
= 0 V  
1
mA  
DSS  
GSS  
DS  
GS  
I
=
20 V, V  
100  
nA  
GS  
DS  
᫪⑙ꢀ  
V
᧥ᥡೃ⁰ᥡ⃐Ȝի  
V
I
= V , I = 250 mA  
2.0  
3.0  
4.0  
V
GS(th)  
GS  
DS  
D
᧥ᥡೃ⁰ᥡ⃐Ȝիꢅႆ
ߋ
ᝐ  
= 250 mA֢25°C  
−12  
mV/°C  
DVGS(th)  
DTJ  
D
r
⃯ᥡೃ⁰ᥡ∩ᇡො᫪ꢄℋ  
V
GS  
V
GS  
V
GS  
V
DS  
= 10 V, I = 15 A  
5.4  
6.6  
11  
6.5  
8.4  
13  
mW  
DS(on)  
D
= 6 V, I = 13 A  
D
= 10 V, I = 15 A, T = 125°C  
D
J
g
FS  
ױ
ᢸො  
= 5 V, I = 15 A  
48  
S
D
ꢓꢔꢀ  
C
ͅꢄ඙  
V
DS  
= 75 V, V = 0 V, f = 1 MHz  
5860  
520  
17  
8205  
730  
30  
pF  
pF  
pF  
W
iss  
GS  
C
Ϛꢄ඙  
oss  
C
֭
ױ
Āᩣꢄ඙  
᧥ᥡℋᑷ  
rss  
R
0.1  
1.4  
3.5  
g
ꢕꢐꢀ  
td  
V
V
= 75 V, I = 15 A,  
31  
16  
41  
9.3  
77  
49  
25  
14  
50  
29  
66  
19  
108  
69  
ns  
ns  
ns  
ns  
nC  
ො᫪ზ᪯៖⃄  
⛺ԧ៖⃄  
(on)  
DD  
GS  
D
= 10 V, R  
= 6 W  
GEN  
t
r
t
͓ឍზ᪯៖⃄  
ℝ៖⃄  
d(off)  
t
f
Q
ማ᧥ᥡꢄ็  
V
GS  
V
GS  
V
DD  
= 0 V 10 V, V = 75 V, I = 15 A  
DD D  
g(TOT)  
= 0 V 6 V, V = 75 V, I = 15 A  
DD  
D
Q
Q
᧥ᥡ⁰ᥡꢄ็  
= 75 V, I = 15 A  
nC  
nC  
gs  
D
᧥ᥡ⃯ᥡ݃Ҳ”ꢄ็  
gd  
ꢖ—ꢖꢗꢖ
ٱ
ꢀ  
⁰ᥡ⃯ᥡl
ٱ
ױ
ի  
V
SD  
0.7  
0.8  
1.1  
1.2  
V
V
V
= 0 V, I = 2.9 A  
(2)  
(2)  
GS  
S
= 0 V, I = 15 A  
GS  
S
t
rr  
֭
ױ
៖⃄  
֭
ױ
ꢄ็  
I = 15 A, di/dt = 100 A/ms  
F
103  
233  
165  
373  
ns  
Q
nC  
rr  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
(֢૓ᚡᝧ)  
ℴ∮ᣩᛄ៮,ꢄᷴ⑙ሇጸ᨜ꢁϷϚŔ᠏ᐠϷἫᚥ᥁Ö⛻Ŕ‡
ڡ
ሇ்֢ୢ᥼ई⛽
׬
Ö⛻᪠ጜ,‡
ڡ
ሇ்
׏
⛾“ꢄᷴ⑙ሇጸ᨜  
Ϸሇ்֢⛽⛰。  
www.onsemi.cn  
3
FDMT800150DC  
⋍⑙ꢀ  
׶
ꢆ  
R
ꢇꢈ  
ꢄꢅ  
1.6  
0.8  
38  
ꢉꢊ  
°C/W  
ণೃ૶⋍ℋ  
ণೃ૶⋍ℋ  
ণೃ▏⋍ℋ  
ণೃ▏⋍ℋ  
ণೃ▏⋍ℋ  
ণೃ▏⋍ℋ  
ণೃ▏⋍ℋ  
ণೃ▏⋍ℋ  
ণೃ▏⋍ℋ  
ণೃ▏⋍ℋ  
ণೃ▏⋍ℋ  
ণೃ▏⋍ℋ  
ণೃ▏⋍ℋ  
ণೃ▏⋍ℋ  
(ꢂ᮸⁰ᥡ)  
(ꢃ᮸⁰ᥡ)  
(1a)  
(1b)  
(1c)  
(1d)  
(1e)  
(1f)  
q
JC  
q
JC  
q
JA  
q
JA  
q
JA  
q
JA  
q
JA  
q
JA  
q
JA  
q
JA  
q
JA  
q
JA  
q
JA  
q
JA  
R
R
R
R
R
R
R
R
R
R
R
R
R
81  
26  
34  
14  
16  
(1g)  
(1h)  
(1i)  
26  
60  
15  
(1j)  
21  
(1k)  
(1l)  
9
11  
Ỉ:  
1. R  
᫪᪗൩᎕FR-4 ꢄᢿᥟŔ
Ö̾ൺ,ᚵꢄᢿᥟş✈ᓧൺŔ 2 oz ᾬ⋪ƨ,ୢ
ᐠЊR  
ꢆ✈ᐗŔꢄᢿᥟᚎᙱ̾ൺ。  
q
q
JA  
JA  
a) 38°C/W (൩᎕n a 1ၓយශෘ  
2 ozᾬ⋪ƨ)  
b) 81°C/W (൩᎕nᣠ෯ 2 ozᾬ⋪ƨ)  
c) ∩ᵂՊᷴ,20.9 x 10.4 x 12.7 mm ᾭ៸ᝃ⋍
1 ၓយශෘ 2 oz ᾬ⋪ƨ  
d) ∩ᵂՊᷴ,20.9 x 10.4 x 12.7 mm ᾭ៸ᝃ⋍
,ᣠ෯ 2 oz ᾬ⋪ƨ  
e) ∩ᵂՊᷴ,45.2 x 41.4 x 11.7 mm Aavid Thermalloy 
Ö
ח
 10-L41B-11 ᝃ⋍
1 ၓយශෘ 2 oz ᾬ⋪ƨ  
f) ∩ᵂՊᷴ,45.2 x 41.4 x 11.7 mm Aavid Thermalloy 
Ö
ח
 10-L41B-11 ᝃ⋍
,ᣠ෯ 2 oz ᾬ⋪ƨ  
g) 200FPM ᷴἡ,ៀᝃ⋍
1 ၓយශෘ 2 oz ᾬ⋪ƨ  
h) 200FPM ᷴἡ,ៀᝃ⋍
,ᣠ෯ 2 oz ᾬ⋪ƨ  
i) 200FPM ᷴἡ,20.9 x 10.4 x 12.7 mm ᾭ៸ᝃ⋍
1 ၓយශෘ 2 oz ᾬ⋪ƨ  
j) 200FPM ᷴἡ,20.9 x 10.4 x 12.7 mm ᾭ៸ᝃ⋍
,ᣠ෯ 2 oz ᾬ⋪ƨ  
k) 200FPM ᷴἡ,45.2 x 41.4 x 11.7 mm Aavid Thermalloy 
Ö
ח
 10-L41B-11 ᝃ⋍
1 ၓយශෘ 2 oz ᾬ⋪ƨ  
ꢃ) 200FPM ᷴἡ, 45.2 x 41.4 x 11.7 mm Aavid Thermalloy 
Ö
ח
 10-L41B-11 ᝃ⋍
,ᣠ෯ 2 oz ᾬ⋪ƨ  
2. ΒἫᚥ:௙Βඝႆ:< 300 msՀՊᶴ:< 2.0%。  
3. E ꢂꢄ 1093 mJ৚nᡇ஫ T = 25_CN-chL = 3 mHI = 27 AV = 150 VV = 10 V100%ꢇ᪗Ἣᚥ (L = 0.1 mH、  
AS  
J
AS  
DD  
GS  
I
AS  
= 86 A)  
4. ͓Β
ח
Ŕꢉꢊꢋꢌ,ꢍ֢
 11 Ŕ SOA 
。  
5. ᙱꢏꢐАŔ᪮ঽꢄἡ¥nᣠଇণꢅ,ꢑꢒ᪮ঽꢄἡ෦ַnᝃ⋍Å֪ꢄᷴꢓꢔꢕ✈Ŕꢄᢿᥟᚎᙱ。  
www.onsemi.cn  
4
 
FDMT800150DC  
ꢎꢏ(T = 25°C,ℴ∮ᣩᛄ៮)  
J
260  
208  
5
Pulse Duration = 80 ms  
Duty Cycle = 0.5% Max  
V
= 5 V  
V
GS  
= 10 V  
GS  
4
3
V = 5.5 V  
GS  
V
GS  
= 6.5 V  
V
GS  
= 6 V  
156  
104  
52  
V
GS  
= 6 V  
2
1
0
V
GS  
= 6.5 V  
V
GS  
= 5.5 V  
V
GS  
= 10 V  
Pulse Duration = 80 ms  
Duty Cycle = 0.5% Max  
V
4
= 5 V  
GS  
0
1
2
3
5
0
52  
104  
156  
208  
260  
0
I , Drain Current (A)  
D
V
DS  
, Drain to Source Voltage (V)  
ꢘ 1. ꢔꢙꢚꢀ  
ꢘ 2. ꢛꢜꢒ᫪ꢀℋꢀἡ
٬᧥ꢖ
իŔ
ߋ
 
2.5  
2.0  
1.5  
1.0  
0.5  
40  
Pulse Duration = 80 ms  
Duty Cycle = 0.5% Max  
I
V
= 15 A  
D
= 10 V  
GS  
30  
20  
I
D
= 15 A  
T = 125°C  
J
10  
0
T = 25°C  
J
−75 −50 −25  
0
25  
50  
75 100 125 150  
4
5
6
7
8
9
10  
V
GS  
, Gate to Source Voltage (V)  
T , Junction Temperature (5C)  
J
ꢘ 3. ꢛꢜꢒ᫪ꢀℋণꢁŔ
ߋ
 
ꢘ 4. ꢒ᫪ꢀℋꢝ᧥ꢖ—իŔ
ߋ
 
300  
100  
260  
208  
156  
V
GS  
= 0 V  
Pulse Duration = 80 ms  
Duty Cycle = 0.5% Max  
V
DS  
= 5 V  
10  
1
T = 150°C  
J
104  
52  
0.1  
T = 25°C  
J
T = 25°C  
J
T = 150°C  
J
0.01  
T = −55°C  
J
T = −55°C  
J
0
0.001  
2
3
4
5
6
7
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
V
GS  
, Gate to Source Voltage (V)  
V
SD  
, Body Diode Forward Voltage (V)  
ꢘ 5. Āᩣ⑙ꢀ  
ꢘ 6. ꢖ—ꢖꢗꢖ
ٱ
ױ
իꢝꢀἡŔ
ߋ
 
www.onsemi.cn  
5
FDMT800150DC  
ꢎꢏ(T = 25°C,ℴ∮ᣩᛄ៮) (continued)  
J
10  
8
10000  
I
D
= 15 A  
C
V
DD  
= 50 V  
iss  
V
= 75 V  
DD  
1000  
100  
10  
6
C
oss  
V
DD  
= 100 V  
4
C
rss  
2
0
f = 1 MHz  
V
GS  
= 0 V  
0
16  
32  
48  
64  
80  
0.1  
1
10  
100  
V
DS  
, Drain to Source Voltage (V)  
Q , Gate Charge (nC)  
g
ꢘ 7. ᧥ꢖꢀ็⑙ꢀ  
ꢘ 8. ඙ꢝꢖ—իŔ
ߋ
 
100  
120  
90  
R
= 0.8°C/W  
q
JC  
T = 25°C  
J
V
GS  
= 10 V  
T = 100°C  
J
10  
60  
30  
V
GS  
= 6 V  
T = 125°C  
J
1
0.01  
0
0.1  
1
10  
100  
1000  
25  
50  
75  
100  
125  
150  
t
, Time in Avalanche (ms)  
AV  
T , Case Temperature (5C)  
C
ꢘ 9.
٭
ዿꢕꢐѻ  
ꢘ 10. ꢂꢃ᪮ঽ⃯ꢀἡꢝ૓ꢁŔ
ߋ
 
700  
50000  
10000  
100  
10  
1
10 ms  
1000  
100  
10  
This Area is  
Limited by r  
100 ms  
DS(on)  
1 ms  
Single Pulse  
T = Max Rated  
Single pulse  
J
R = 0.8°C/W  
R
T
= 0.8°C/W  
= 25°C  
Curve Bent to  
Measured Data  
10 ms  
DC  
qJC  
q
JC  
T = 25°C  
C
C
0.1  
0.1  
−5  
−4  
−3  
−2  
−1  
1
10  
100  
600  
10  
10  
10  
10  
10  
1
t, Pulse Width (s)  
V
DS  
, Drain to Source Voltage (V)  
ꢘ 11.
ױ
ȯի൩͈࿅ļꢙ  
ꢘ 12. ꢉꢞΒꢂꢃѿ૧  
www.onsemi.cn  
6
FDMT800150DC  
2
1
Duty Cycle − Descending Order  
D = 0.5  
0.2  
0.1  
P
DM  
0.1  
0.01  
0.05  
0.02  
0.01  
t
1
t
2
Notes:  
Z
R
(t) = r(t) x R  
q
JC  
= 0.8°C/W  
q
JC  
Single pulse  
q
JC  
Peak T = P  
x Z (t) + T  
q
J
DM  
JC  
C
Duty Cycle, D = t / t  
1
2
0.001  
−5  
−4  
−3  
−2  
−1  
10  
10  
10  
10  
10  
1
t, Rectangular Pulse Duration (s)  
ꢘ 13. ণೃ૶૓ɼ
ڭ
ꢁᣒএ  
᎕᧧ᚖꢝꢄǁ቏  
᧧ᚖ  
ꢌ  
FDMT800150DC  
ᅂჯ  
՗ƨꢃꢍ  
៮෡ဆඝႆ  
Shipping  
800150DC  
PQFN8 8X8, 2P,  
13.3 mm  
3000 /՗  
DUAL COOL 88  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
POWERTRENCH and DUAL COOL are registered trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or sub-  
sidiaries in the United States and/or other countries.  
www.onsemi.cn  
7
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
PQFN8 8X8, 2P  
CASE 483AQ  
ISSUE B  
DATE 24 OCT 2022  
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