FDMT800152DC [ONSEMI]
N 沟道，双 Cool™ 88 PowerTrench® MOSFET，150V，72A，9.0mΩ;
| 型号： | FDMT800152DC |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，双 Cool™ 88 PowerTrench® MOSFET，150V，72A，9.0mΩ |
| 文件： | 总9页 (文件大小：533K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
2015 年8 月
FDMT800152DC
N 沟道Dual CoolTM 88 PowerTrench® MOSFET
150 V、72 A、9.0 m
特性
标准
此N 沟道MOSFET 采用Fairchild 先进的PowerTrench® 工艺生
产。先进的硅技术和 Dual CoolTM 封装技术完美融合，可在提供
最小 rDS(on) 的同时通过极低的结至环境热阻保持卓越的开关性
能。
最大值rDS(on) = 9.0 m （VGS = 10 V、ID = 13 A）
最大值rDS(on) = 11.5 m （VGS = 6 V、ID = 11 A）
低rDS(on) 和高效的先进硅封装
下一代先进体二极管技术，专为软恢复设计
薄型8x8mm MLP 封装
应用
OringFET/ 负载开关
同步整流
MSL1 强健封装设计
100% 经过UIL 测试
DC-DC 转换
符合RoHS
G
引脚1
引脚1
S
D
D
D
D
G
S
S
S
S
S
S
D
D
D
D
Dual CoolTM 88
顶
底
MOSFET 最大额定值TA = 25 °C，除非另有说明。
符号
参数
额定值
单位
VDS
VGS
150
V
漏极— 源极电压
栅极— 源极电压
±20
72
V
漏极电流
— 连续
TC = 25 °C
TC = 100 °C
TA = 25 °C
（注5）
（注5）
（注1a）
（注4）
（注3）
45
— 连续
— 连续
— 脉冲
ID
A
13
413
EAS
PD
726
mJ
W
单脉冲雪崩能量
功耗
113
TC = 25 °C
TA = 25 °C
3.2
功耗
（注1a）
TJ, TSTG
-55 to +150
°C
工作和保存结温范围
热特性
RJC
RJC
RJA
RJA
RJA
RJA
RJA
2.0
1.1
38
81
15
21
9
结至外壳热阻
结至外壳热阻
结至环境热阻
结至环境热阻
结至环境热阻
结至环境热阻
结至环境热阻
（顶部源极）
（底部漏极）
（注1a）
（注1b）
（注1i）
°C/W
（注1j）
（注1k）
封装标识与定购信息
器件封装
器件
封装
Dual CoolTM 88
卷盘大小
13”
卷带宽度
13.3 mm
数量
800152DC
FDMT800152DC
3000 件
©2015 飞兆半导体公司
1
www.fairchildsemi.com
FDMT800152DC Rev. 1.1
电气特性TJ = 25 °C，除非另有说明。
符号
关断特性
BVDSS
参数
测试条件
最小值 典型值 最大值
单位
Drain to Source Breakdown Voltage
ID = 250 A, VGS = 0 V
ID = 250 A，参考25 °C
150
V
BVDSS
TJ
114
mV/°C
击穿电压温度系数
IDSS
IGSS
VDS = 120 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
1
A
零栅极电压漏极电流
100
nA
栅极— 源极漏电流
导通特性
VGS(th)
VGS = VDS, ID = 250 A
ID = 250 A，参考25 °C
2.0
2.9
-11
4.0
V
栅极至源极阀值电压
VGS(th)
TJ
mV/°C
栅极至源极阀值电压温度系数
V
GS = 10 V, ID = 13 A
6.9
8.6
14.6
41
9.0
11.5
19
rDS(on)
gFS
VGS = 6 V, ID = 11 A
m
漏极至源极静态导通电阻
正向跨导
VGS = 10 V, ID = 13 A, TJ = 125 °C
VDS = 5 V, ID = 13 A
S
动态特性
Ciss
4196
379
16
5875
530
30
pF
pF
pF
输入电容
VDS = 75 V, VGS = 0 V,
f = 1 MHz
Coss
输出电容
Crss
反向传输电容
栅极阻抗
Rg
0.1
1.3
3.3
开关特性
td(on)
tr
24
13
36
7.9
59
38
18
12
39
23
58
16
83
53
ns
ns
导通延迟时间
上升时间
V
V
DD = 75 V, ID = 13 A,
GS = 10 V, RGEN = 6
td(off)
tf
ns
关断延迟时间
下降时间
ns
Qg(TOT)
Qg(TOT)
Qgs
nC
nC
nC
nC
总栅极电荷
VGS = 0 V 至10 V
VGS = 0 V 至6 V
总栅极电荷
V
DD = 75 V,
I
D = 13 A
栅极— 源极电荷
栅极— 漏极“ 米勒” 电荷
Qgd
漏极— 源极二极管特性
0.7
0.8
95
1.1
1.2
V
GS = 0 V、IS = 2.9 A
（注2）
（注2）
VSD
V
源极— 漏极二极管正向电压
VGS = 0 V、IS = 13 A
trr
152
299
ns
反向恢复时间
反向恢复电荷
IF = 13 A, di/dt = 100 A/s
Qrr
187
nC
©2015 飞兆半导体公司
FDMT800152DC Rev. 1.1
2
www.fairchildsemi.com
热特性
RJC
RJC
RJA
RJA
RJA
RJA
RJA
RJA
RJA
RJA
RJA
RJA
RJA
RJA
2.0
1.1
38
81
26
34
14
16
26
60
15
21
9
结至外壳热阻
结至外壳热阻
结至环境热阻
结至环境热阻
结至环境热阻
结至环境热阻
结至环境热阻
结至环境热阻
结至环境热阻
结至环境热阻
结至环境热阻
结至环境热阻
结至环境热阻
结至环境热阻
（顶部源极）
（底部漏极）
（注1a）
（注1b）
（注1c）
（注1d）
（注1e）
（注1f）
（注1g）
（注1h）
（注1i）
°C/W
（注1j）
（注1k）
（注1l）
11
注：
1. R
通过安装在FR-4 电路板上的器件确定，该电路板使用指定的2 oz 铜焊盘，如下图所示。R
由用户的电路板设计确定。
JA
JA
b. 81 °C/W（安装于最小2 oz 铜焊盘）
a. 38 °C/W （安装于 a 1 平方英寸 2 oz
铜焊盘）
c. 静止空气，20.9x10.4x12.7mm 铝质散热器，1 平方英寸2 oz 铜焊盘
d. 静止空气，20.9x10.4x12.7mm 铝质散热器，最小2 oz 铜焊盘
e. 静止空气，45.2x41.4x11.7mm Aavid Thermalloy 器件号10-L41B-11 散热器，1 平方英寸2 oz 铜焊盘
f. 静止空气，45.2x41.4x11.7mm Aavid Thermalloy 器件号10-L41B-11 散热器，最小2 oz 铜焊盘
g. 200FPM 气流，无散热器，1 平方英寸2 oz 铜焊盘
h. 200FPM 气流，无散热器，最小2 oz 铜焊盘
i. 200FPM 气流，20.9x10.4x12.7mm 铝质散热器，1 平方英寸2 oz 铜焊盘
j. 200FPM 气流，20.9x10.4x12.7mm 铝质散热器，最小2 oz 铜焊盘
k. 200FPM 气流，45.2x41.4x11.7mm Aavid Thermalloy 器件号10-L41B-11 散热器，1 平方英寸2 oz 铜焊盘
l. 200FPM 气流，45.2x41.4x11.7mm Aavid Thermalloy 器件号10-L41B-11 散热器，最小2 oz 铜焊盘
2. 脉冲测试：脉冲宽度：< 300 ms，占空比：< 2.0%。
3. E 为726 mJ，基于起始T = 25 °C ；N-ch：L = 3 mH、I = 22 A、V = 150 V、V = 10 V。100% 经过测试（L = 0.1 mH、I = 69 A。）
AS
J
AS
DD
GS
AS
4. 有关脉冲编号的更多详情，请参考图11 中的SOA 图形。
5. 计算得到的连续电流仅限于最大结温，实际连续电流将受限于散热以及电气机械应用的电路板设计。
©2015 飞兆半导体公司
FDMT800152DC Rev. 1.1
3
www.fairchildsemi.com
典型特性TJ = 25 °C，除非另有说明。
4
3
2
1
0
200
VGS = 10 V
VGS = 5 V
VGS = 7 V
VGS = 5.5 V
160
120
VGS = 6 V
VGS = 6 V
VGS = 7 V
80
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
VGS = 5.5 V
VGS = 10 V
40
0
PULSE DURATION = 80s
DUTY CYCLE = 0.5% MAX
VGS = 5 V
0
1
2
3
4
5
0
40
80
120
160
200
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
图1. 通态区域特性
图2. 标准化导通电阻与漏极电流和栅极电压的关系
2.5
2.0
1.5
1.0
0.5
50
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
ID = 13 A
VGS = 10 V
40
ID = 13 A
30
20
10
0
TJ = 125 o
C
TJ = 25 o
C
-75 -50 -25
0
25 50 75 100 125 150
4
5
6
7
8
9
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
图3. 标准化导通电阻与结温的关系
图4. 导通电阻与栅极— 源极电压的关系
200
160
120
80
300
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
100
VGS = 0 V
VDS = 5 V
10
TJ = 150 o
C
1
TJ = 150 o
C
TJ = 25 oC
0.1
TJ = 25 o
C
40
TJ = -55 o
C
0.01
0.001
TJ = -55 o
C
0
2
3
4
5
6
7
8
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
图5. 传输特性
图6. 源极— 漏极二极管正向电压与源极电流的关系
©2015 飞兆半导体公司
FDMT800152DC Rev. 1.1
4
www.fairchildsemi.com
典型特性TJ = 25 °C，除非另有说明。
10
10000
1000
100
10
Ciss
ID = 13 A
VDD = 50 V
8
6
4
2
0
VDD = 75 V
VDD = 100 V
Coss
Crss
f = 1 MHz
GS = 0 V
V
1
0.1
0
12
24
36
48
100
100
60
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
图7. 栅极电荷特性
图8. 电容与漏极— 源极电压的关系
100
80
64
48
32
16
0
RJC = 1.1 oC/W
TJ = 25 oC
VGS = 10 V
10
TJ = 100 o
C
VGS = 6 V
TJ = 125 o
C
1
0.01
0.1
1
10
1000
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE (ms)
图9. 非箝位电感开关能力
图10. 最大连续漏极电流与壳温的关系
1000
100000
10000
1000
100
SINGLE PULSE
RJC = 1.1 oC/W
TC = 25 oC
100
10
1
10 s
THIS AREA IS
LIMITED BY rDS(on)
100 s
SINGLE PULSE
TJ = MAX RATED
1 ms
R
JC = 1.1 oC/W
TC = 25 o
CURVE BENT TO
MEASURED DATA
10 ms
DC
C
0.1
10
10-5
10-4
10-3
t, PULSE WIDTH (sec)
10-2
10-1
1
0.1
1
10
600
VDS, DRAIN to SOURCE VOLTAGE (V)
图11. 正向偏压安全工作区
图12. 单个脉冲最大功耗
©2015 飞兆半导体公司
FDMT800152DC Rev. 1.1
5
www.fairchildsemi.com
典型特性TJ = 25 °C，除非另有说明。
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
P
DM
0.1
0.01
0.1
0.05
0.02
0.01
t
1
t
2
注：
Z
R
(t) = r(t) x R
o
JC
JC
= 1.1 C/W
SINGLE PULSE
JC
峰值T = P
x Z (t) + T
J
DM
JC C
占空比D = t / t
1
2
0.001
10-5
10-4
10-3
10-2
10-1
1
t, RECTANGULAR PULSE DURATION (sec)
图13. 结至外壳瞬态热响应曲线
©2015 飞兆半导体公司
FDMT800152DC Rev. 1.1
6
www.fairchildsemi.com
(2X)
8
8.00
6.90
2.00
0.05 C
A
8.00±0.10
8
B
5
5
1.10
5.23
KEEP OUT
AREA
4.24
3.94
PKG
L
8.00±0.10
9.00
C
(1.83)
1.55
0.48
(2.41)
1.13
0.05 C
(2X)
1
4
PKG
1
4
C
L
(1.00)
5.10
7.10
1.10
4.03
3.68
(1.56)
SEE DETAIL A
(8X)
LAND PATTERN
RECOMMENDATION
0.30
0.20
0.95
0.75
0.10
.05
C A B
6.00
C
C
0.05
0.00
8X
1.10
SEATING
PLANE
2.00
0.90
(0.40)
(0.50)
0.70
0.50
SCALE: 2X
1
2
3
4
PIN #1
IDENT
1.68
1.48
NOTES: UNLESS OTHERWISE SPECIFIED
A) THIS PACKAGE IS NOT PRESENTLY REGISTERED
WITH ANY STANDARDS COMMITTEE.
B) DIMENSIONS ARE INCLUSIVE OF BURRS,
MOLD FLASH, AND TIE BAR PROTRUSIONS.
C) ALL DIMENSIONS ARE IN MILLIMETERS.
D) DRAWING CONFORMS TO ASME Y14.5M-2009.
E) IT IS RECOMMENDED TO HAVE NO TRACES OR
VIAS WITHIN THE KEEP OUR AREA.
1.20
2.78
5.33
5.13
(0.91)
0.45
(1.23)
F) DRAWING FILENAME: MKT-PQFN08RREV2
8
7
6
5
0.25
7.00
6.80
(4X)
(0.60)
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
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literature is subject to all applicable copyright laws and is not for resale in any manner.
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