FDMT80060DC_技术文档

DATA SHEET

www.onsemi.cn

MOSFET – N-Channel,

POWERTRENCH^ꢀ,

DUAL COOL^ꢀ88

V

r

MAX

I MAX

D

DS

DS(ON)

60 V

ꢁ

ꢂ

ꢁ

m

ꢀ

@

1

0

V

292 A

1.3 mꢀ @ 8 V

60 V, 292 A, 1.1 mW

FDMT80060DC

ꢂ

ꢃ

᭢ᫀ

TDFNW8 8.3x8.4, 2P,

DUAL COOL, OPTION 2

CASE 507AR

ꢀꢁNꢁꢂꢀꢁMOSFETꢁꢁꢂꢁonsemiꢁꢃꢃꢄꢁPOWERTRENCHꢁꢄ

ꢅꢅꢆ。ꢃꢃꢄꢆ

ᑠᤏ٬ꢁ

DUALꢁCOOLꢁ෡ꢇᑠᤏ൬ꢈꢉ

ר

，

׏

ईᖰŻᣠ෯ꢁr

რ͓ሇꢐ。

ꢁꢄ

׬

៖ꢊꢋᥡĮꢄꢌꢍ▏੣⋍ꢎƽᓡԳꢏꢄ

DS(on)

MARKING DIAGRAM

⑙ꢀ

ꢀꢁ 1

•ꢇᣠଇȜ r

= 1.1 mꢀ (V = 10 V, I = 43 A)

GS D

DS(on)

•ꢇᣠଇȜ r

= 1.3 mꢀ (V = 8 V, I = 37 A)

GS D

٬

ꢑᜨꢄꢃꢃꢆ෡ꢇ

DS(on)

•ꢇĮ r

DS(on)

•ꢇ⛻⛰Ãꢃꢃĳlᥡꢒᑠᤏ，✃ꢈꢓቂ૭ꢔꢕ

•ꢇꢖ५ 8x8 mm MLP ෡ꢇ

•ꢇMSL1 ᄚɅ෡ꢇꢔꢕ

80060 AWLYW

•ꢇ100% ꢗꢋ UIL Ἣꢘ

•ꢇꢀ

ࡈ

Ö⛽

؋

ꢙ,ꢉꢊ,ꢚ

ר

RoHS ꢋꢌ

80060 = Device Code

A

WL

Y

= Assembly Location

= Wafer Lot Code

= Year Code

ꢁ✈

•ꢇOringFET / ꢛꢜრ͓

•ꢇ

׬

ꢍꢎꢏ

•ꢇDC−DC ꢝꢐ

W

= Work Week Code

ELECTRICAL CONNECTION

G

S

D

S

N-Channel MOSFET

ORDERING INFORMATION

See detailed ordering, marking and shipping information on

page 7 of this data sheet.

1

Publication Order Number:

October, 2022 − Rev. 2

FDMT80060DCCN/D

FDMT80060DC

MOSFET ꢂꢃ⍭ꢄꢅ(T = 25°C，ℴ∮ꢀᣩᛄ៮。)

A

׶

ꢆ

ꢇꢈ

⍭ꢄꢅ

60

ꢉꢊ

V

⃯ᥡ－⁰ᥡꢄի

᧥ᥡ－⁰ᥡꢄի

⃯ᥡꢄἡꢁ—ꢁ᪮ঽ

—ꢁ᪮ঽ

DS

20

V

GS

I

D

292

A

T

= 25°C

(Ỉꢁ5)

(Ỉ 1a)

(Ỉ 4)

(Ỉ 3)

C

= 100°C

184

C

—ꢁ᪮ঽ

T = 25°C

43

A

—ꢁ௙Β

1825

2400

156

E

AS

Ե௙Β↺༉்Ჟ

ѿ૧

mJ

W

P

D

T

C

= 25°C

ѿ૧

T = 25°C

A

(Ỉꢁ1a)

3.2

T , T

࿅

ļ٬ƽ

സণꢅී

ࣔ

−55 to +150

°C

J

STG

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

(֢૓ᚡᝧ)

ୢ᥼ꢄիᡕ᪗ᣠଇ⍭ൺȜጸꢂϷϚŔȜී

ࣔ

，

ࡈ

Ö

׏

்úᔿय。ୢ᥼ᡕ᪗Ûĵ᪩{℠Ȝ，෦ៀẵƽᚑ

ࡈ

Öѿ்，

׏

்úොೄ

ࡈ

Öᔿय，ᅑ

ڭ

׏

∰ሇ。

⋍ꢀ்

׶

ꢆ

ꢇꢈ

⍭ꢄꢅ

1.6

0.8

38

ꢉꢊ

°C/W

R

ণೃ૶૓⋍ℋ

ণೃ▏੣⋍ℋ

(ꢂ᮸⁰ᥡ)

(ꢃ᮸⃯ᥡ)

(Ỉꢁ1a)

ꢃ

JC

R

ꢃ

JC

R

ꢃ

JA

R

(Ỉꢁ1b)

81

ꢃ

JA

R

(Ỉꢁ1i)

15

ꢃ

JA

R

(Ỉꢁ1j)

21

ꢃ

JA

R

(Ỉꢁ1k)

9

ꢃ

JA

www.onsemi.cn

2

FDMT80060DC

ꢀᷴ⑙ꢀ(T = 25°C，ℴ∮ꢀᣩᛄ៮。)

J

׶

ꢆ

ꢇꢈ

Ἣᚥꢋꢌ

ꢂꢍꢅ ꢎꢏꢅ ꢂꢃꢅ

ꢉꢊ

ꢐꢑ⑙ꢀ

BV

⃯ᥡ—⁰ᥡϛՏꢄի

I

= 250 ꢄ A, V = 0 V

GS

60

−

V

DSS

D

ϛՏꢄիꢅႆ

ߋ

ᝐ

= 250 ꢄ A, ֢૓ 25°C

−

30

mV/°C

ꢅ BV_DSS

ꢅ T_J

D

I

⇆᧥ᥡꢄի⃯ᥡꢄἡ

᧥ᥡꢁ—ꢁ⁰ᥡ⃯ꢄἡ

V

= 48 V, V

GS

= 0 V

−

1

ꢄ A

DSS

DS

I

=

20 V, V

100

nA

GSS

GS

DS

ꢒ᫪⑙ꢀ

V

᧥ᥡೃ⁰ᥡ⃐Ȝꢄի

V

I

= V , I = 250 ꢄ A

2.0

3.5

4.0

V

GS(th)

GS

DS

D

᧥ᥡೃ⁰ᥡ⃐Ȝꢄիꢅႆ

ߋ

ᝐ

= 250 ꢄ A, ֢૓ 25°C

−

−13

−

mV/°C

ꢅ V_GS(th)

ꢅ T_J

D

r

⃯ᥡೃ⁰ᥡ∩ᇡො᫪ꢄℋ

V

GS

V

GS

V

GS

V

DS

= 10 V, I = 43 A

−

0.87

1.1

1.3

1.7

−

mꢀ

DS(on)

D

= 8 V, I = 37 A

D

= 10 V, I = 43 A, T = 125°C

1.3

D

J

g

FS

ᵃ

ױ

ᢸො

= 5 V, I = 43 A

134

S

D

ꢓꢔ⑙ꢀ

C

ᩣͅꢄ඙

V

DS

= 30 V, V = 0 V, f = 1 MHz

−

14406

3222

87

20170

4515

175

pF

ꢀ

iss

GS

C

ᩣϚꢄ඙

oss

C

֭

ױ

Āᩣꢄ඙

᧥ᥡℋᑷ

−

rss

R

0.1

1.8

4.5

g

ꢕꢐ⑙ꢀ

td

V

= 30 V, I = 43 A,

−

75

47

120

76

ns

ො᫪ზ᪯៖⃄

⛺ԧ៖⃄

(on)

DD

GS

D

= 10 V, R

= 6 ꢀ

GEN

t

r

t

͓ឍზ᪯៖⃄

⛻ℝ៖⃄

66

106

34

d(off)

t

f

19

Q

ማ᧥ᥡꢄ็

170

137

71

238

192

−

nC

V

GS

V

GS

V

DD

= 0 V ೃ 10 V, V = 30 V, I = 43 A

DD D

g(TOT)

= 0 V ೃ 8 V, V = 30 V, I = 43 A

DD

D

Q

᧥ᥡꢁ—ꢁ⁰ᥡꢄ็

= 30 V, I = 43 A

nC

gs

D

᧥ᥡꢁ—ꢁ⃯ᥡꢁ“ꢁ݃Ҳꢁ”ꢁꢄ็

19

−

gd

⃯ꢖ-⁰ꢖꢗꢖ

ٱ

⑙ꢀ

⁰ᥡꢁ—ꢁ⃯ᥡlᥡ

ٱ

ᵃ

ױ

ꢄի

V

SD

−

0.7

0.8

84

1.1

1.2

V

= 0 V, I = 2.6 A

(Ỉ 2)

GS

S

= 0 V, I = 43 A

GS

S

t

rr

֭

ױ

ቂ૭៖⃄

֭

ױ

ቂ૭ꢄ็

I = 43 A, di/dt = 100 A/ꢄ s

F

135

143

ns

Q

89

nC

rr

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

(֢૓ᚡᝧ)

ℴ∮ꢀᣩᛄ៮，“ꢄᷴ⑙ሇ”ጸ᨜ꢂϷϚŔ᠏ᐠϷἫᚥ᥁Ö⛻Ŕ

ڡ

ሇ்֢ᝐ。ୢ᥼ई⛽

׬

᥁Ö⛻᪠ጜ，

ڡ

ሇ்

׏

்⛾“ꢄᷴ⑙ሇ”ጸ᨜

ꢂᐠϷሇ்֢ᝐ⛽⛰ೄ。

www.onsemi.cn

3

FDMT80060DC

⋍⑙ꢀ

׶

ꢆ

R

ꢇꢈ

⍭ꢄꢅ

1.6

0.8

38

ꢉꢊ

°C/W

ণೃ૶૓⋍ℋ

ণೃ▏੣⋍ℋ

(ꢂ᮸⁰ᥡ)

(ꢃ᮸⁰ᥡ)

(Ỉ 1a)

(Ỉ 1b)

(Ỉ 1c)

(Ỉ 1d)

(Ỉ 1e)

(Ỉ 1f)

ꢃ

JC

R

ꢃ

JC

R

ꢃ

JA

R

81

ꢃ

JA

R

26

ꢃ

JA

R

34

ꢃ

JA

R

14

ꢃ

JA

R

16

ꢃ

JA

R

(Ỉ 1g)

(Ỉ 1h)

(Ỉ 1i)

26

ꢃ

JA

R

60

ꢃ

JA

R

15

ꢃ

JA

R

(Ỉ 1j)

21

ꢃ

JA

R

(Ỉ 1k)

(Ỉ 1l)

9

ꢃ

JA

R

11

ꢃ

JA

Ỉ：

1. R

᫪᪗ꢆꢇई FR-4 ꢄꢈꢉ⛺Ŕ

ࡈ

Öꢊൺ，ꢋꢄꢈꢉşꢌꢍൺŔ 2 oz ꢎꢏꢐ，ୢ⛻

ࣞ

ᐠꢑ。R

ꢒꢌꢓŔꢄꢈꢉꢔꢕꢊൺ。

CA

ꢃ

JA

a) 38°C/Wꢁ(ꢆꢇnꢁa 1ꢁꢖꢗꢘ

ꢙꢁ2 ozꢁꢎꢏꢐ)

b) 81°C/W (ꢆꢇnᣠꢚꢁ2 ozꢁꢎꢏꢐ)

c) ∩ꢛꢜᷴ, 20.9 × 10.4 × 12.7 mm ꢝꢞꢟ⋍

ࡈ

, 1 ꢖꢗꢘꢙ 2 oz ꢎꢏꢐ

d) ∩ꢛꢜᷴ, 20.9 × 10.4 × 12.7 mm ꢝꢞꢟ⋍

ࡈ

, ᣠꢚ 2 oz ꢎꢏꢐ

e) ∩ꢛꢜᷴ, 45.2 × 41.4 × 11.7 mm Aavid Thermalloy

ࡈ

Ö

ח

10−L41B−11 ꢟ⋍

ࡈ

, 1 ꢖꢗꢘꢙ 2 oz ꢎꢏꢐ

f) ∩ꢛꢜᷴ, 45.2 × 41.4 × 11.7 mm Aavid Thermalloy

ࡈ

Ö

ח

10−L41B−11 ꢟ⋍

ࡈ

, ᣠꢚ 2 oz ꢎꢏꢐ

g) 200 FPM ᷴἡ, ៀꢟ⋍

ࡈ

, 1 ꢖꢗꢘꢙ 2 oz ꢎꢏꢐ

h) 200 FPM ᷴἡ, ៀꢟ⋍

ࡈ

, ᣠꢚ^ꢀ2 oz ꢎꢏꢐ

i) 200 FPM ᷴἡ, 20.9 × 10.4 × 12.7 mm ꢝꢞꢟ⋍

ࡈ

, 1 ꢖꢗꢘꢙ 2 oz ꢎꢏꢐ

j) 200 FPM ᷴἡ, 20.9 × 10.4 × 12.7 mm ꢝꢞꢟ⋍

ࡈ

, ᣠꢚ^ꢀ2 oz ꢎꢏꢐ

k) 200 FPM ᷴἡ, 45.2 × 41.4 × 11.7 mm Aavid Thermalloy

ࡈ

Ö

ח

10−L41B−11 ꢟ⋍

ࡈ

, 1 ꢖꢗꢘꢙ 2 oz ꢎꢏꢐ

ꢃ) 200 FPM ᷴἡ, 45.2 × 41.4 × 11.7 mm Aavid Thermalloy

ࡈ

Ö

ח

10−L41B−11 ꢟ⋍

ࡈ

, ᣠꢚ 2 oz ꢎꢏꢐ

2. ௙ΒἫᚥ: ௙Βꢠႆ: < 300 ms, Հꢜꢡ: < 2.0%。

3. E ꢄ2400 mJ, ৚nꢢꢣ T = 25°C; N−ch: L = 3 mH、I = 40 A、V = 60 V、V = 10 V。100% test at (L = 0.3 mH, I = 87 A。)

AS

J

AS

DD

GS

AS

4. ᣩ͓௙Βꢤ

ח

Ŕꢥꢦꢧꢨ, ꢩ֢૓

ࣞ

11 ꢂŔ SOA

ࣞ

ꢪ。

5. ꢕꢫꢬАŔ᪮ঽꢄἡ¥℠nᣠଇণꢅ, ꢭꢮ᪮ঽꢄἡ෦ַ℠nꢟ⋍Å֪ꢄᷴꢯꢰꢱꢌŔꢄꢈꢉꢔꢕ。

www.onsemi.cn

4

FDMT80060DC

ꢎꢏ⑙ꢀ(T = 25°C, ℴ∮ꢀᣩᛄ៮)

J

320

240

160

80

6

Pulse Duration = 80 ꢄs

Duty Cycle = 0.5% Max

V

= 10 V

GS

V

= 5.5 V

GS

V

= 8 V

5

GS

V

= 6 V

GS

4

3

2

1

V

GS

= 6.5 V

V

GS

= 6.5 V

Pulse Duration = 80 ꢄs

Duty Cycle = 0.5% Max

V

= 6 V

GS

V

GS

= 8 V

V

= 10 V

GS

V

= 5.5 V

GS

0

160

I , Drain Current (A)

0

80

240

320

1

2

3

4

5

0

V

, Drain to Source Voltage (V)

D

DS

ꢘ 1. ꢒ᫪ꢙꢚ⑙ꢀ

ꢘ 2. ᧧ꢛꢜꢒ᫪ꢀℋꢝ⃯ꢖꢀἡ

٬᧥ꢖ

ꢀիŔꢐ

ߋ

1.7

1.6

1.5

1.4

1.3

1.2

1.1

1.0

0.9

0.8

0.7

5

4

Pulse Duration = 80 ꢄs

Duty Cycle = 0.5% Max

I

V

= 43 A

D

= 10 V

GS

I

D

= 43 A

3

2

T = 125°C

J

T = 25°C

J

1

0

−75 −50 −25

0

25

50

75 100 125 150

5

6

7

8

9

10

V

GS

, Gate to Source Voltage (V)

T , Junction Temperature (ꢁ C)

J

ꢘ 3. ᧧ꢛꢜꢒ᫪ꢀℋꢝণꢁŔꢐ

ߋ

ꢘ 4. ꢒ᫪ꢀℋꢝ᧥ꢖ—⁰ꢖꢀիŔꢐ

ߋ

320

100

320

240

160

80

V

GS

= 0 V

Pulse Duration = 80 ꢄs

Duty Cycle = 0.5% Max

V

DS

= 5 V

10

1

T = 150°C

J

T = 150°C

J

T = 25°C

J

0.1

T = 25°C

J

T = −55°C

J

0.01

T = −55°C

J

0

0.001

5

0.0

0.2

0.4

0.6

0.8

1.0

1.2

3

4

6

7

V

GS

, Gate to Source Voltage (V)

V

SD

, Body Diode Forward Voltage (V)

ꢘ 5. Āᩣ⑙ꢀ

ꢘ 6. ⁰ꢖ—⃯ꢖꢗꢖ

ٱ

ᵃ

ױ

ꢀիꢝ⁰ꢖꢀἡŔꢐ

ߋ

www.onsemi.cn

5

FDMT80060DC

ꢎꢏ⑙ꢀ(T = 25°C, ℴ∮ꢀᣩᛄ៮) (continued)

J

10

8

50000

I

D

= 43 A

C

iss

V

= 20 V

DD

10000

1000

100

V

DD

= 30 V

C

oss

rss

6

V

= 40 V

DD

4

C

2

0

f = 1 MHz

= 0 V

V

GS

10

0

72

0.1

1

10

60

36

108

144

180

V

DS

, Drain to Source Voltage (V)

Q , Gate Charge (nC)

g

ꢘ 7. ᧥ꢖꢀ็⑙ꢀ

ꢘ 8. ꢀ඙ꢝ⃯ꢖ—⁰ꢖꢀիŔꢐ

ߋ

300

100

320

240

R

= 0.8°C/W

ꢃ

JC

V

GS

= 10 V

T = 25°C

J

V

GS

= 8 V

160

80

T = 100°C

J

10

1

T = 125°C

J

0

0.1

1

100

1000

10000

25

50

75

100

125

150

10

t

, Time in Avalanche (ms)

AV

T , Case Temperature (ꢁ C)

C

ꢘ 9. ∮

٭

ꢊꢀዿꢕꢐ்ѻ

ꢘ 10. ꢂꢃ᪮ঽ⃯ꢖꢀἡꢝ૓ꢁŔꢐ

ߋ

3000

1000

100000

10000

1000

Single pulse

R

= 0.8°C/W

ꢃ

JC

10 ꢄs

T

C

= 25°C

100

10

100 ꢄs

This Area is

Limited by r

DS(on)

1 ms

Single Pulse

T = Max Rated

100

1

10 ms

DC

J

R

T

= 0.8°C/W

Curve Bent to

Measured Data

ꢃ

JC

= 25°C

C

0.1

10

−5

−4

−3

−2

−1

1

10

100

400

10

1

t, Pulse Width (s)

V

DS

, Drain to Source Voltage (V)

ꢘ 11. ᵃ

ױ

ȯի൩͈࿅ļꢙ

ꢘ 12. ꢉꢞ௙Βꢂꢃѿ૧

www.onsemi.cn

6

FDMT80060DC

ꢎꢏ⑙ꢀ(T = 25°C, ℴ∮ꢀᣩᛄ៮) (continued)

J

2

1

Duty Cycle − Descending Order

D = 0.5

0.2

0.1

0.05

0.02

0.01

P

DM

0.1

0.01

t

1

t

2

Notes:

(t) = r(t) x R

Z

R

ꢃ

JC

Single pulse

= 0.8°C/W

ꢃ

JC

Peak T = P

x Z (t) + T

ꢃ

JC C

J

DM

Duty Cycle, D = t /t

1

2

0.001

−5

−4

−3

−2

−1

10

1

t, Rectangular Pulse Duration (s)

ꢘ 13. ণೃ૶૓ɼꢔ⋍

ڭ

ꢁᣒএ

෡᎕᧧ᚖꢝꢄ៽ǁ቏

ࡈ

ꢌ᧧ᚖ

†

ࡈ

ꢌ

FDMT80060DC

෡᎕ᅂჯ

՗ƨꢃꢍ

᫟៮෡ဆඝႆ

13.3 mm

Shipping

80060

TDFNW8 8.3x8.4, 2P,

DUAL COOL, OPTION 2

13”

3000 ⍧/՗

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

POWERTRENCH and DUAL COOL are registered trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or sub-

sidiaries in the United States and/or other countries.

www.onsemi.cn

7

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

TDFNW8 8.3x8.4, 2P, DUAL COOL, OPTION 2

CASE 507AR

ISSUE B

DATE 29 MAR 2021

GENERIC

MARKING DIAGRAM*

XXXX = Specific Device Code

A

= Assembly Location

WL = Wafer Lot Code

Y

= Year Code

W

= Work Week Code

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “ G”,

may or may not be present. Some products

may not follow the Generic Marking.

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON95711G

TDFNW8 8.3x8.4, 2P, DUAL COOL, OPTION 2

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型号：	FDMT80060DC
厂家：	ONSEMI
描述：	N 沟道，双 CoolTM 88 PowerTrench® MOSFET，60V， 292A，1.1mΩ
文件：	总9页 (文件大小：631K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

FDMT80060DC [ONSEMI]

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