FDN302P [ONSEMI]
P 沟道 2.5V 指定 PowerTrench® MOSFET -20V，-2.4A，55mΩ;
| 型号： | FDN302P |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道 2.5V 指定 PowerTrench® MOSFET -20V，-2.4A，55mΩ PC 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：284K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – P-Channel, 2.5 V
Specified, POWERTRENCH)
D
S
G
FDN302P
SOT−23
CASE 527AG
General Description
This P−Channel 2.5 V specified MOSFET uses a rugged gate
version of onsemi’s advanced POWERTRENCH process. It has been
optimized for power management applications with a wide range of
gate drive voltage (2.5 V − 12 V).
D
Features
• −20 V, −2.4 A
R
R
= 0.055 ꢀ @ V = −4.5 V
GS
DS(ON)
G
S
= 0.080 ꢀ @ V = −2.5 V
DS(ON)
GS
• Fast Switching Speed
• High Performance Trench Technology for Extremely Low R
DS(ON)
MARKING DIAGRAM
• SUPERSOTt−3 Provides Low R
and 30% Higher Power
DS(ON)
Handling Capability than SOT−23 in the Same Footprint
• This is a Pb−Free and Halide Free Device
302MG
G
Applications
• Power Management
• Load Switch
• Battery Protection
302 = Specific Device Code
M
= Month Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted.)
A
ORDERING INFORMATION
Symbol
Parameter
Drain−Source Voltage
Value
−20
Unit
V
V
DSS
V
GSS
†
Device
Package
Shipping
Gate−Source Voltage
ꢁ12
V
FDN302P
SOT−23
(Pb−Free/
Halide Free)
3000 /
Tape & Reel
I
D
Drain Current
− Continuous (Note 1a)
− Pulsed
A
−2.4
−10
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
P
Maximum Power Dissipation
(Note 1a)
W
D
0.5
(Note 1b)
0.46
T , T
Operating and Storage Junction
Temperature Range
−55 to +150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
A
Symbol
Parameter
Value
Unit
R
Thermal Resistance,
Junction−to−Ambient (Note 1a)
250
°C/W
ꢂ
JA
R
Thermal Resistance,
Junction−to−Case (Note 1)
75
°C/W
ꢂ
JC
© Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
March, 2023 − Rev. 4
FDN302P/D
FDN302P
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain−Source Breakdown Voltage
V
= 0 V, I = −250 ꢃ A
−20
−
−
−
V
DSS
GS
D
Breakdown Voltage Temperature
Coefficient
I = −250 ꢃ A, Referenced to 25_C
D
−
−12
mV/_C
ꢄ BVDSS
ꢄ TJ
I
Zero Gate Voltage Drain Current
Gate−Body Leakage, Forward
Gate−Body Leakage, Reverse
V
DS
V
GS
V
GS
= −16 V, V = 0 V
−
−
−
−
−
−
−1
ꢃ A
nA
nA
DSS
GS
I
= 12 V, V = 0 V
100
GSSF
GSSR
DS
I
= −12 V, V = 0 V
−100
DS
ON CHARACTERISTICS (Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V , I = −250 ꢃ A
−0.6
−1.0
−1.5
V
GS D
Gate Threshold Voltage
Temperature Coefficient
I = −250 ꢃ A, Referenced to 25_C
D
−
3
−
mV/_C
ꢄ VGS(th)
ꢄ TJ
R
Static Drain−Source
On−Resistance
V
V
V
= −4.5 V, I = −2.4 A
−
−
−
44
64
58
55
80
84
mꢀ
DS(on)
GS
GS
GS
D
= −2.5 V, I = −2 A
D
= −4.5 V, I = −2.4 A, T = 125_C
D
J
I
On−State Drain Current
V
GS
V
DS
= −4.5 V, V = −5 V
−10
−
−
−
A
D(on)
DS
g
FS
Forward Transconductance
= −5 V, I = −2.4 A
−
10
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= −10 V, V = 0 V,
−
−
−
882
211
112
−
−
−
pF
pF
pF
iss
DS
GS
f = 1.0 MHz
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
rss
SWITCHING CHARACTERISTICS (Note 2)
t
Turn−On Delay Time
Turn−On Rise Time
Turn−Off Delay Time
Turn−Off Fall Time
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
V
V
= −10 V, I = −1 A,
−
−
−
−
−
−
−
13
11
25
15
9
23
20
40
27
14
−
ns
ns
d(on)
DD
GS
D
= −4.5 V, R
= 6 ꢀ
GEN
t
r
t
ns
d(off)
t
f
ns
Q
V
DS
V
GS
= −10 V, I = −2.4 A,
nC
nC
nC
g
D
= −4.5 V
Q
2
gs
gd
Q
3
−
DRAIN–SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain–Source Diode Forward Current
I
S
−
−
−
−0.42
−1.2
A
V
V
SD
Drain−Source Diode Forward
V
GS
= 0 V, I = −0.42 (Note 2)
−0.7
S
Voltage
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
1. R
is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
ꢂ
JA
mounting surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
ꢂ
ꢂ
CA
JC
2
a) 250°C/W when mounted on a 0.02 in pad of 2 oz. copper.
b) 270°C/W when mounted on a minimum pad.
Scale 1:1 on letter size paper.
2. Pulse Test: Pulse Width ≤ 300 ꢃ s, Duty Cycle ≤ 2.0%.
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2
FDN302P
TYPICAL CHARACTERISTICS
15
12
9
3.0
V
= −4.5 V
GS
−3.0 V
−3.5 V
V
GS
= −2.0 V
−2.5 V
−2.5 V
−4.0 V
2.5
2.0
−3.0 V
−3.5 V
1.5
6
−2.0 V
1.0
0.5
3
−4.5 V
−4.0 V
0
0
0.5
1
1.5
2
2.5
0
3
6
9
12
15
−V , DRAIN−SOURCE VOLTAGE (V)
DS
−I , DRAIN CURRENT (A)
D
Figure 2. On−Resistance Variation with Drain
Figure 1. On−Region Characteristics
Current and Gate Voltage
1.5
1.4
1.3
0.16
0.14
I
= −2.4 A
= −4.5 V
I
D
= −1.2 A
D
V
GS
0.12
1.2
1.1
0.10
0.08
0.06
0.04
0.02
T = 125°C
A
1.0
0.9
0.8
0.7
T = 25°C
A
5.0
4.5
−50 −25
0
25
50
75
100 125 150
1.5
2.0
2.5
3.0
3.5
4.0
T , JUNCTION TEMPERATURE (°C)
J
−V , GATE TO SOURCE VOLTAGE (V)
GS
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance Variation with
Gate−to−Source Voltage
Temperature
12
10
10
25°C
T = 125°C
V
= 0 V
V
DS
= −5 V
A
GS
−55°C
1
0.1
8
6
4
2
0
T = 125°C
A
0.01
25°C
0.001
−55°C
0.8
0.0001
0.5
1.0
1.5
2.0
2.5
3.0
0
0.2
0.4
0.6
1.0
1.2
−V , GATE TO SOURCE VOLTAGE (V)
GS
−V , BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
Figure 5. Transfer Characteristics
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3
FDN302P
TYPICAL CHARACTERISTICS (Continued)
5
4
3
2
1
0
1400
V
= −5 V
f = 1 MHz
DS
I
D
= −2.4 A
V
GS
= 0 V
1200
−10 V
1000
800
C
iss
−15 V
600
400
200
0
C
oss
C
rss
12
10
0
4
2
6
8
0
2
4
6
8
10
Q , GATE CHARGE (nC)
g
−V , DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 8. Capacitance Characteristics
Figure 7. Gate Charge Characteristics
100
10
20
15
Single Pulse
R
= 270°C/W
ꢂ
JA
R
Limit
T = 25°C
A
DS(on)
1 ms
10 ms
100 ms
10
5
1
V
= −4.5 V
1 s
GS
0.1
0.01
Single Pulse
10 s
DC
R
= 270°C/W
T = 25°C
ꢂ
JA
A
0
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
−V , DRAIN−SOURCE VOLTAGE (V)
DS
t , TIME (s)
1
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum Power
Dissipation
1
D = 0.5
R
(t) = r(t) * R
ꢂ
JA
ꢂ
JA
R
= 270°C/W
ꢂ
0.2
0.1
JA
0.1
P
(pk)
0.05
t
1
0.02
0.01
0.01
t
2
T − T = P * R (t)
ꢂ
JA
J
A
Duty Cycle, D = t / t
1
2
Single Pulse
0.001
0.0001
0.001
0.01
0.1
t , Time (s)
1
10
100
1000
1
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
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4
FDN302P
SUPERSOT is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23/SUPERSOTt−23, 3 LEAD, 1.4x2.9
CASE 527AG
ISSUE A
DATE 09 DEC 2019
GENERIC
MARKING DIAGRAM*
*This information is generic. Please refer to
XXX = Specific Device Code
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
M
= Month Code
XXXMG
G
= Pb−Free Package
G
(Note: Microdot may be in either location)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON34319E
SOT−23/SUPERSOT−23, 3 LEAD, 1.4X2.9
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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© Semiconductor Components Industries, LLC, 2019
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