FDN304P [ONSEMI]
P 沟道，1.8V 指定，PowerTrench® MOSFET，-20V，-2.4A，52mΩ;
| 型号： | FDN304P |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道，1.8V 指定，PowerTrench® MOSFET，-20V，-2.4A，52mΩ |
| 文件： | 总7页 (文件大小：279K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – P-Channel 1.8 V
Specified POWERTRENCH)
FDN304P
SOT−23/SUPERSOT−23, 3 LEAD, 1.4x2.9
CASE 527AG
General Description
This P−Channel 1.8 V specified MOSFET uses onsemi’s advanced
low voltage POWERTRENCH process. It has been optimized for
battery power management applications.
D
Features
• −2.4 A, −20 V
♦ R
♦ R
♦ R
= 52 mW @ V = −4.5 V
GS
G
S
DS(ON)
DS(ON)
DS(ON)
= 70 mW @ V = −2.5 V
= 100 mW @ V = −1.8 V
GS
GS
• Fast Switching Speed
MARKING DIAGRAM
• High Performance Trench Technology for Extremely Low R
DS(ON)
Drain
3
• SUPERSOTt−23 provides Low R
and 30% Higher Power
DS(ON)
Handling Capability than SOT23 in the same Footprint
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
304PM
Compliant
1
2
Gate
Source
Applications
• Battery Management
• Load Switch
• Battery Protection
304P = Specific Device Code
= Date Code
M
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
© Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
March, 2022 − Rev. 3
FDN304P/D
FDN304P
ABSOLUTE MAXIMUM RATINGS
T = 25°C unless otherwise noted
A
Symbol
Parameter
Ratings
Unit
V
Drain−Source Voltage
−20
V
DSS
GSS
Gate−Source Voltage
8
V
V
Drain Current
Continuous (Note 1a)
Pulsed
A
I
D
−2.4
−10
Maximum Power Dissipation
(Note 1a)
(Note 1b)
W
P
D
0.5
0.46
Operating and Storage Junction Temperature Range
_C
−55 to +150
T , T
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Thermal Resistance, Junction−to−Ambient (Note 1a)
Thermal Resistance, Junction−to−Case (Note 1)
Ratings
250
Unit
°C/W
°C/W
R
θ
JA
JC
75
R
θ
ELECTRICAL CHARACTERISTICS
T = 25°C unless otherwise noted
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain−Source Breakdown Voltage
V
GS
= 0 V, I = −250 mA
−20
V
DSS
D
Breakdown Voltage Temperature Coefficient
I = −250 mA, Referenced to 25_C
D
−13
mV/_C
DBVDSS
DTJ
I
Zero Gate Voltage Drain Current
Gate−Body Leakage, Forward
Gate−Body Leakage, Reverse
V
DS
V
GS
V
GS
= −16 V, V = 0 V
−1
mA
nA
nA
DSS
GS
I
= 8 V, V = 0 V
100
GSSF
GSSR
DS
I
= −8 V, V = 0 V
−100
DS
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V
V
DS
= V I = −250 mA
GS, D
−0.4
−0.8
−1.5
V
GS(th)
Gate Threshold Voltage Temperature Coefficient I = −250 mA, Referenced to 25_C
3
mV/_C
DVGS(th)
DTJ
D
R
Static Drain−Source On−Resistance
V
GS
V
GS
V
GS
V
GS
V
DS
= −4.5 V, I = −2.4 A
36
47
65
52
70
mW
DS(on)
D
= −2.5 V, I = −2 A
D
= −1.8 V, I = −1.8 A
100
D
I
On−State Drain Current
= −4.5 V, V = −5 V
−10
A
S
D(on)
DS
g
FS
Forward Transconductance
= −5 V, I = −1.25 A
12
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= −10 V, V = 0 V, f = 1.0 MHz
1312
240
pF
pF
pF
iss
GS
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
106
rss
SWITCHING CHARACTERISTICS (Note 2)
t
Turn−On Delay Time
Turn−On Rise Time
Turn−Off Delay Time
Turn−Off Fall Time
V
DD
V
GS
= −10 V, I = −1 A,
15
15
40
25
27
27
64
40
ns
ns
ns
ns
d(on)
D
= −4.5 V, R
= 6 W
GEN
t
r
t
d(off)
t
f
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2
FDN304P
ELECTRICAL CHARACTERISTICS (continued)
T = 25°C unless otherwise noted
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 2)
Q
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
V
DS
= −10 V, I = −2.4 A, V = −4.5 V
12
2
20
nC
nC
nC
g
D
GS
Q
gs
Q
gd
2
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain−Source Diode Forward Current
Drain−Source Diode Forward Voltage = 0 V, I = −0.42 A (Note 2)
I
−0.42
−1.2
A
V
S
V
SD
V
GS
−0.6
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
1. R
is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
θ
JA
mounting surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
θ
θ
CA
JC
a) 250°C/W when mounted on a
b) 270°C/W when mounted on a
minimum pad.
2
0.02 in pad of 2 oz copper.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
PACKAGE MARKING AND ORDERING INFORMATION
†
Device
Device Marking
Package
Shipping
FDN304P
304P
SOT−23
(Pb−Free)
3000 units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
POWERTRENCH is a registered trademark and SUPERSOT is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries.
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3
FDN304P
TYPICAL CHARACTERISTICS
15
12
9
4
V
= −4.5 V
−3.0V
GS
−2.5V
3.5
−2.0V
V
= −1.5 V
GS
3
2.5
2
−1.8V
−1.8V
6
−2.0V
1.5
1
−2.5V
−1.5V
3
−3.0V
−4.5V
0
0.5
0
0.5
1
1.5
2
2.5
0
3
6
9
12
15
−I Drain Current (A)
D,
−V , Drain to Source Voltage (V)
DS
Figure 1. On−Region Characteristics
Figure 2. On−Resistance Variation with
Drain Current and Gate Voltage
1.5
1.4
1.3
1.2
1.1
1
0.14
0.12
0.1
I
D
= −1.2 A
I
V
= −2.4 A
D
= −4.5 V
GS
0.08
0.06
0.04
0.02
T
A
= 125°C
0.9
0.8
0.7
T
A
= 25°C
1
2
3
4
5
−50
−25
0
25
50
75
100
125
150
T , Junction temperature (5C)
J
−V , Gate to Source Voltage (V)
GS
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance Variation with
Gate−to−Source Voltage
Temperature
100
10
15
V
DS
= −5 V
V
GS
= 0 V
T
A
= 125°C
25°C
−55°C
12
9
1
T
A
= 125°C
0.1
25°C
6
−55°C
0.01
0.001
0.0001
3
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
0.5
1
1.5
2
2.5
3
−V , Body Diode Forward Voltage (V)
SD
−V , Gate to Source Voltage (V)
GS
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage
Variation with Source Current and Temperature
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4
FDN304P
TYPICAL CHARACTERISTICS (Continued)
2100
5
4
3
2
1
0
V
DS
= −5 V
f = 1 MHz
= 0 V
I
D
= −2.4 A
1800
1500
1200
900
600
300
0
V
GS
−10 V
C
ISS
−15 V
C
C
OSS
RSS
0
5
10
15
20
0
2
4
6
8
10
12
14
−V , Drain to Source Voltage (V)
DS
Q ,Gate Charge (nC)
g
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
100
10
20
15
10
5
Single Pulse
R
= 270°C/W
= 25°C
θ
JA
T
R
DS(ON)
A
1ms
10ms
100ms
1s
1
10s
DC
V
= −4.5 V
GS
0.1
0.01
Single Pulse
R
θ
= 270°C/W
JA
T
= 25°C
A
0
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
−V , Drain−Source Voltage (V)
DS
t , Time (s)
1
Figure 10. Single Pulse Maximum Power
Dissipation
Figure 9. Maximum Safe Operating Area
1
0.1
D = 0.5
0.2
R
(t) = r(t) * R
q
JA
q
JA
0.1
0.05
R
= 270°C/W
q
JA
0.02
0.01
P
(pk)
t
1
t
2
0.01
0.001
Single Pulse
T − T = P * R (t)
q
JA
Duty Cycle, D = t / t
J
A
1
2
0.0001
0.001
0.01
0.1
t , Time (s)
1
10
100
1000
1
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23/SUPERSOTt−23, 3 LEAD, 1.4x2.9
CASE 527AG
ISSUE A
DATE 09 DEC 2019
GENERIC
MARKING DIAGRAM*
*This information is generic. Please refer to
XXX = Specific Device Code
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
M
= Month Code
XXXMG
G
= Pb−Free Package
G
(Note: Microdot may be in either location)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON34319E
SOT−23/SUPERSOT−23, 3 LEAD, 1.4X2.9
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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© Semiconductor Components Industries, LLC, 2019
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