FDN304PZ [ONSEMI]
P 沟道，1.8V 指定，PowerTrench™ MOSFET，-20V，-2.4A，52mΩ;
| 型号： | FDN304PZ |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道，1.8V 指定，PowerTrench™ MOSFET，-20V，-2.4A，52mΩ PC 开关 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：274K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – P-Channel, 1.8 V
Specified, POWERTRENCH)
SOT−23/SUPERSOTt −23, 3 LEAD,
FDN304PZ
1.4x2.9
CASE 527AG
General Description
This P−Channel 1.8 V specified MOSFET uses onsemi’s advanced
low voltage POWERTRECH process. It has been optimized
for battery power management applications.
D
Features
• –20 V, –2.4 A
R
DS(on)
R
DS(on)
R
DS(on)
= 52 mW @ V = –4.5 V
GS
= 70 mW @ V = –2.5 V
GS
G
S
= 100 mW @ V = –1.8 V
GS
• Fast Switching Speed
• ESD Protection Diode
MARKING DIAGRAM
• High Performance Trench Technology for Extremely Low R
DS(on)
• SUPERSOTt−3 Provides Low R
and 30% Higher Power
DS(on)
04ZMG
Handling Capability than SOT−23 in the Same Footprint
• This is a Pb−Free and Halide Free Device
G
04Z = Specific Device Code
Applications
M
= Month Code
• Battery Management
• Load Switch
• Battery Protection
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted.)
A
Symbol
Parameter
Drain−Source Voltage
Value
–20
8
Unit
V
†
Device
Package
Shipping
V
DSS
V
GSS
FDN304PZ
SOT−23
(Pb−Free/
Halide Free)
3000 /
Gate−Source Voltage
V
Tape & Reel
I
D
Drain Current
A
– Continuous (Note 1a)
– Pulsed
–2.4
–10
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
P
D
Maximum Power Dissipation
(Note 1a)
(Note 1b)
W
0.5
0.46
T , T
Operating and Storage Junction
Temperature Range
–55 to +150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
A
Symbol
Parameter
Value
Unit
R
Thermal Resistance,
Junction−to−Ambient (Note 1a)
250
°C/W
q
JA
R
Thermal Resistance,
Junction−to−Case (Note 1)
75
°C/W
q
JC
© Semiconductor Components Industries, LLC, 2003
1
Publication Order Number:
January, 2023 − Rev. 3
FDN304PZ/D
FDN304PZ
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain–Source Breakdown Voltage
V
I
= 0 V, I = –250 mA
–20
−
−
−
V
DSS
GS
D
DBV
/
Breakdown Voltage Temperature
Coefficient
= –250 mA, Referenced to 25°C
−
–13
mV/°C
DSS
D
DT
J
DSS
GSS
I
Zero Gate Voltage Drain Current
Gate–Body Leakage
V
V
= –16 V, V = 0 V
−
−
−
−
–1
10
mA
mA
DS
GS
I
= 8 V, V = 0 V
DS
GS
ON CHARACTERISTICS (Note 2)
V
Gate Threshold Voltage
V
I
= V , I = –250 mA
–0.4
–0.8
3
–1.5
V
GS(th)
DS
GS D
DV
/
Gate Threshold Voltage
Temperature Coefficient
= –250 mA, Referenced to 25°C
−
−
mV/°C
GS(th)
J
D
DT
R
Static Drain–Source
On–Resistance
V
GS
V
GS
V
GS
= –4.5 V, I = –2.4 A
−
−
−
36
47
65
52
70
100
mW
DS(on)
D
= –2.5 V, I = –2.0 A
D
= –1.8 V, I = –1.8 A
D
I
On–State Drain Current
V
GS
V
DS
= –4.5 V, V = –5 V
–10
−
−
−
A
S
D(on)
DS
g
FS
Forward Transconductance
= –5 V, I = –1.25 A
−
12
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= –10 V, V = 0 V, f = 1.0 MHz
−
−
−
−
1310
240
106
5.6
−
−
−
−
pF
pF
pF
W
iss
DS
GS
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
rss
R
V
= 15 mV, f = 1.0 MHz
G
SWITCHING CHARACTERISTICS (Note 2)
t
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
V
= –10 V, I = –1 A,
−
−
−
−
−
−
−
15
15
40
25
12
2
27
27
64
40
20
−
ns
ns
d(on)
DD
GS
D
= –4.5 V, R
= 6 W
GEN
t
r
t
ns
d(off)
t
f
ns
Q
V
DS
= –10 V, I = –2.4 A, V = –4.5 V
nC
nC
nC
g
D
GS
Q
gs
gd
Q
2
−
DRAIN–SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain–Source Diode Forward Current
I
S
−
−
−
–0.42
–1.2
A
V
V
SD
Drain–Source Diode Forward
Voltage
V
GS
= 0 V, I = –0.42 (Note 2)
–0.6
S
t
Reverse Recovery Time
I = –2.4 A
−
−
18
7
–
–
ns
rr
F
d /d = 100 A/ms
iF
t
Q
Reverse Recovery Charge
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
1. R
is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
q
JA
mounting surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
q
q
CA
JC
2
a) 250°C/W when mounted on a 0.02 in pad of 2 oz. copper.
b) 270°C/W when mounted on a minimum pad.
Scale 1:1 on letter size paper.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
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2
FDN304PZ
TYPICAL CHARACTERISTICS
10
8
3
−4.5 V
−6.0 V
−2.5 V
−2.0 V
2.5
−3.0 V
V
GS
= −2.0 V
6
4
2
0
2
1.5
1
−4.5 V
−3.5 V
−3.0 V
−6.0 V
−2.5 V
V
GS
= −1.5 V
−10.0 V
0.5
0
0.5
1
1.5
2
0
2
4
6
8
10
−V , Drain−Source Voltage (V)
DS
−I , Drain Current (A)
D
Figure 2. On−Resistance Variation with Drain
Figure 1. On−Region Characteristics
Current and Gate Voltage
1.4
1.3
1.2
0.14
0.12
0.1
I
D
= −1.2 A
I
= −2.4 A
= −4.5 V
D
V
GS
0.08
0.06
0.04
0.02
1.1
1
T = 125°C
A
T = 25°C
A
0.9
0.8
10
−50
−25
0
25
50
75
100
125
0
2
4
6
8
T , Junction Temperature (5C)
J
−V , Gate to Source Voltage (V)
GS
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance Variation with
Gate−to−Source Voltage
Temperature
100
10
10
V
GS
= 0 V
V
DS
= −5 V
8
6
4
2
0
T = 125°C
A
1
25°C
0.1
0.01
0.001
25°C
T = 125°C
A
−55°C
−55°C
1.5
0.0001
0
1.2
0
0.5
1
2
2.5
3
0.2
0.4
0.6
0.8
1
−V , Gate to Source Voltage (V)
GS
−V , Body Diode Forward Voltage (V)
SD
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
Figure 5. Transfer Characteristics
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3
FDN304PZ
TYPICAL CHARACTERISTICS (CONTINUED)
5
4
3
2
1
0
1600
V
DS
= −5 V
f = 1 MHz
= 0 V
I
D
= −2.4 A
V
GS
−10 V
1200
C
iss
−15 V
800
400
C
oss
C
rss
0
0
2
4
6
8
10
12
14
0
5
10
15
20
Q , Gate Charge (nC)
g
−V , Drain to Source Voltage (V)
DS
Figure 8. Capacitance Characteristics
Figure 7. Gate Charge Characteristics
20
15
10
5
100
10
R
Single Pulse
DS(on)
R
= 250°C/W
q
JA
T = 25°C
A
1 ms
10 ms
100 ms
1 s
1
10 s
V
= −4.5 V
GS
DC
0.1
Single Pulse
R
= 250°C/W
q
JA
T = 25°C
A
0.01
0
1
0.1
10
100
0.001
0.01
0.1
10
100
1000
1
−V , Drain to Source Voltage (V)
DS
t , Time (s)
1
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum Power
Dissipation
1
D = 0.5
0.2
0.1
R
(t) = r(t) + R
q
JA
q
JA
R
= 250°C/W
0.1
0.01
q
JA
0.05
0.02
P
(pk)
t
1
0.01
t
2
T − T = P * R (t)
q
JA
J
A
Single Pulse
Duty Cycle, D = t / t
1
2
0.001
0.0001
0.001
0.01
0.1
t , Time (s)
1
10
100
1000
1
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
SUPERSOT is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23/SUPERSOTt−23, 3 LEAD, 1.4x2.9
CASE 527AG
ISSUE A
DATE 09 DEC 2019
GENERIC
MARKING DIAGRAM*
*This information is generic. Please refer to
XXX = Specific Device Code
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
M
= Month Code
XXXMG
G
= Pb−Free Package
G
(Note: Microdot may be in either location)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON34319E
SOT−23/SUPERSOT−23, 3 LEAD, 1.4X2.9
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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© Semiconductor Components Industries, LLC, 2019
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