FDN306P [ONSEMI]
P 沟道，1.8V 指定，PowerTrench® MOSFET，-12V，-2.6A，40mΩ;
| 型号： | FDN306P |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道，1.8V 指定，PowerTrench® MOSFET，-12V，-2.6A，40mΩ 开关 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：269K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – P-Channel, 1.8 V
Specified, POWERTRENCH)
FDN306P
SOT−23
CASE 527AG
General Description
This P−Channel 1.8 V specified MOSFET uses onsemi’s advanced
low voltage POWERTRENCH process. It has been optimized for
battery power management applications.
D
Features
• –2.6 A, –12 V
R
DS(on)
R
DS(on)
R
DS(on)
= 40 mW @ V = –4.5 V
GS
= 50 mW @ V = –2.5 V
GS
G
S
= 80 mW @ V = –1.8 V
GS
• Fast Switching Speed
• High Performance Trench Technology for Extremely Low R
DS(on)
MARKING DIAGRAM
• SUPERSOTt−3 Provides Low R
and 30% Higher Power
DS(on)
Handling Capability than SOT−23 in the Same Footprint
• This is a Pb−Free and Halide Free Device
306MG
G
Applications
• Battery Management
• Load Switch
• Battery Protection
306 = Specific Device Code
M
= Month Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted.)
A
ORDERING INFORMATION
Symbol
Parameter
Drain−Source Voltage
Value
–12
8
Unit
V
V
DSS
V
GSS
†
Device
Package
Shipping
Gate−Source Voltage
V
FDN306P
SOT−23
(Pb−Free/
Halide Free)
3000 /
Tape & Reel
I
D
Drain Current
– Continuous (Note 1a)
– Pulsed
A
–2.6
–10
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
P
Maximum Power Dissipation
(Note 1a)
W
D
0.5
(Note 1b)
0.46
T , T
Operating and Storage Junction
Temperature Range
–55 to +150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
A
Symbol
Parameter
Value
Unit
R
Thermal Resistance,
Junction−to−Ambient (Note 1a)
250
°C/W
q
JA
R
Thermal Resistance,
Junction−to−Case (Note 1)
75
°C/W
q
JC
© Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
March, 2022 − Rev. 4
FDN306P/D
FDN306P
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain–Source Breakdown Voltage
V
I
= 0 V, I = –250 mA
–12
−
−
−
V
DSS
GS
D
DBV
/
Breakdown Voltage Temperature
Coefficient
= –250 mA, Referenced to 25°C
−
–3
mV/°C
DSS
J
D
DT
I
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V
DS
V
GS
V
GS
= –10 V, V = 0 V
−
−
−
−
−
−
–1
mA
nA
nA
DSS
GS
I
= 8 V, V = 0 V
100
GSSF
GSSR
DS
I
= –8 V, V = 0 V
–100
DS
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
I
= V , I = –250 mA
–0.4
–0.6
2.5
–1.5
V
GS(th)
DS
GS D
DV
/
Gate Threshold Voltage
Temperature Coefficient
= –250 mA, Referenced to 25°C
−
−
mV/°C
GS(th)
J
D
DT
R
Static Drain–Source
On–Resistance
V
GS
V
GS
V
GS
V
GS
= –4.5 V, I = –2.6 A
−
−
−
−
30
39
54
40
40
50
80
54
mW
DS(on)
D
= –2.5 V, I = –2.3 A
D
= –1.8 V, I = –1.8 A
D
= –4.5 V, I = –2.6 A, T = 125°C
D
J
I
On–State Drain Current
V
GS
V
DS
= –4.5 V, V = –5 V
–10
−
−
−
A
S
D(on)
DS
g
FS
Forward Transconductance
= –5 V, I = –2.6 A
−
10
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= –6 V, V = 0 V, f = 1.0 MHz
−
−
−
1138
454
302
−
−
−
pF
pF
pF
iss
GS
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
rss
SWITCHING CHARACTERISTICS (Note 2)
t
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
V
= –6 V, I = –1 A,
−
−
−
−
−
−
−
11
10
38
35
12
2
20
20
61
56
17
−
ns
ns
d(on)
DD
GS
D
= –4.5 V, R
= 6 W
GEN
t
r
t
ns
d(off)
t
f
ns
Q
V
DS
= –6 V, I = –2.6 A, V = –4.5 V
nC
nC
nC
g
D
GS
Q
gs
gd
Q
3
−
DRAIN–SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain–Source Diode Forward Current
I
S
−
−
−
–0.42
–1.2
A
V
V
SD
Drain–Source Diode Forward
Voltage
V
GS
= 0 V, I = –0.42 (Note 2)
–0.6
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
1. R
is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
q
JA
mounting surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
q
q
CA
JC
2
a) 250°C/W when mounted on a 0.02 in pad of 2 oz. copper.
b) 270°C/W when mounted on a minimum pad.
Scale 1:1 on letter size paper.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
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2
FDN306P
TYPICAL CHARACTERISTICS
20
15
10
5
2.2
−4.5 V
−2.5 V
−3.0 V
V
GS
= −1.8 V
2.0
1.8
1.6
1.4
−2.0 V
−2.0 V
−1.8 V
−2.5 V
−3.0 V
1.2
1.0
0.8
−3.5 V
−4.5 V
V
= −1.5 V
GS
0
0
1
2
3
4
0
5
10
15
20
−V , Drain to Source Voltage (V)
DS
−I , Drain Current (A)
D
Figure 2. On−Resistance Variation with Drain
Figure 1. On−Region Characteristics
Current and Gate Voltage
1.4
1.3
0.12
I
= −1.3 A
I
= −2.6 A
= −4.5 V
D
D
V
GS
0.10
0.08
0.06
0.04
1.2
1.1
1.0
0.9
0.8
T = 125°C
A
T = 25°C
A
0.02
−50 −25
0
25
50
75
100 125 150
1
2
3
4
5
T , Junction Temperature (5C)
J
−V , Gate to Source Voltage (V)
GS
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance Variation with
Gate−to−Source Voltage
Temperature
10
1
20
V
GS
= 0 V
V
DS
= −5 V
T = −55°C
A
25°C
−125°C
15
10
5
T = 125°C
A
0.1
0.01
25°C
−55°C
0.001
0
0.5
0.0001
1.0
1.5
2.0
2.5
0
0.2
0.4
0.6
0.8
1.0
1.2
−V , Gate to Source Voltage (V)
GS
−V , Body Diode Forward Voltage (V)
SD
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
Figure 5. Transfer Characteristics
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3
FDN306P
TYPICAL CHARACTERISTICS (Continued)
5
4
3
2
1
0
2000
V = −4 V
DS
f = 1 MHz
= 0 V
I
D
= −2.6 A
V
GS
−6 V
1600
1200
−8 V
C
iss
800
400
C
oss
C
rss
0
0
3
6
9
12
15
0
3
6
9
12
Q , Gate Charge (nC)
g
−V , Drain to Source Voltage (V)
DS
Figure 8. Capacitance Characteristics
Figure 7. Gate Charge Characteristics
100
10
30
25
Single Pulse
R
= 270°C/W
q
JA
R
Limit
DS(on)
100 ms
1 ms
T = 25°C
A
20
15
10
5
10 ms
1
100 ms
1 s
DC
V
= −4.5 V
Single Pulse
= 270°C/W
T = 25°C
GS
0.1
0.01
R
q
JA
A
0
0.1
1
10
100
0.001
0.01
0.1
1
10
100
−V , Drain to Source Voltage (V)
DS
t , Time (s)
1
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum Power
Dissipation
1
D = 0.5
0.2
R
R
(t) = r(t) * R
q
JA
q
JA
0.1
= 270°C/W
q
JA
0.1
0.01
0.05
P
(pk)
0.02
t
1
0.01
t
2
T − T = P * R (t)
q
JA
J
A
Single Pulse
Duty Cycle, D = t / t
1
2
0.001
0.0001
0.001
0.01
0.1
t , Time (s)
1
10
100
1000
1
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
SUPERSOT is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.
www.onsemi.com
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23/SUPERSOTt−23, 3 LEAD, 1.4x2.9
CASE 527AG
ISSUE A
DATE 09 DEC 2019
GENERIC
MARKING DIAGRAM*
*This information is generic. Please refer to
XXX = Specific Device Code
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
M
= Month Code
XXXMG
G
= Pb−Free Package
G
(Note: Microdot may be in either location)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON34319E
SOT−23/SUPERSOT−23, 3 LEAD, 1.4X2.9
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
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© Semiconductor Components Industries, LLC, 2019
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