FDN327N [ONSEMI]
N 沟道,1.8V 指定,PowerTrench® MOSFET,20V,2A,72mΩ;型号: | FDN327N |
厂家: | ONSEMI |
描述: | N 沟道,1.8V 指定,PowerTrench® MOSFET,20V,2A,72mΩ 开关 光电二极管 晶体管 |
文件: | 总6页 (文件大小:273K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
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D
S
MOSFET – N-Channel,
POWERTRENCH), 1.8 Vgs
Specified
20 V, 2 A, 70 mW
G
FDN327N
D
General Description
G
This 20 V N−Channel MOSFET uses onsemi’s high voltage
POWERTRENCH process. It has been optimized for power
management applications.
S
SOT−23/SUPERSOTt−23, 3 LEAD, 1.4x2.9
CASE 527AG
Features
MARKING DIAGRAM
• 2 A, 20 V
♦ R
♦ R
♦ R
= 70 mꢀ @ V = 4.5 V
GS
DS(on)
DS(on)
DS(on)
= 80 mꢀ @ V = 2.5 V
GS
327M
= 120 mꢀ @ V = 1.8 V
GS
• Low Gate Charge (4.5 nC typical)
• Fast Switching Speed
• High Performance Trench Technology for Extremely Low R
• This Device is Pb−Free and Halogen Free
327
M
= Specific Device Code
= Assemble Operation Month
DS(on)
ORDERING INFORMATION
Applications
• Load Switch
• Battery Protection
• Power Management
†
Device
Package
Shipping
FDN327N
SOT−23−3
3000 /
(Pb−Free/Halide Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
ABSOLUTE MAXIMUM RATINGS
A
T = 25°C unless otherwise noted.
Symbol
Parameter
Ratings
Unit
V
V
Drain−Source Voltage
20
8
DSS
GSS
V
Gate−Source Voltage
V
I
D
Drain Current – Continuous (Note 1a)
Drain Current – Pulsed
2
A
8
P
D
Power Dissipation for Single Operation
(Note 1a)
0.5
W
Power Dissipation for Single Operation
(Note 1b)
0.46
T , T
Operating and Storage Junction
Temperature Range
−55 to +150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
March, 2023 − Rev. 5
FDN327N/D
FDN327N
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
250
Unit
°C/W
°C/W
R
Thermal Resistance, Junction−to−Ambient (Note 1a)
Thermal Resistance, Junction−to−Case (Note 1)
ꢁ
JA
JC
R
75
ꢁ
ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted.
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain–Source Breakdown Voltage
V
= 0 V, I = 250 ꢂ A
20
−
−
−
V
DSS
GS
D
Breakdown Voltage Temperature
Coefficient
I
D
= 250 μA,
−
12
mV/°C
ꢃ BVDSS
ꢃ TJ
Referenced to 25°C
I
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V
DS
V
GS
V
GS
= 16 V, V = 0 V
−
−
−
−
−
−
1
ꢂ A
nA
nA
DSS
GS
I
= 8 V, V = 0 V
100
−100
GSSF
GSSR
DS
I
= −8 V, V = 0 V
DS
ON CHARACTERISTICS (Note 2)
V
Gate Threshold Voltage
V
I
= V , I = 250 ꢂ A
0.4
0.7
1.5
V
GS(th)
DS
GS D
Gate Threshold Voltage Temperature
Coefficient
= 250 ꢂ A,
Referenced to 25°C
−
−3
−
mV/°C
ꢃ VGS(th)
ꢃ TJ
D
R
Static Drain–Source On–Resistance
V
GS
V
GS
V
GS
V
GS
V
GS
V
DS
= 4.5 V, I = 2.0 A
−
−
−
−
8
−
40
49
65
55
−
70
80
120
103
−
mꢀ
DS(on)
D
= 2.5 V, I = 1.9 A
D
= 1.8 V, I = 1.6 A
D
= 4.5 V, I = 2 A, T = 125°C
D
J
I
On–State Drain Current
= 4.5 V, V = 5 V
A
D(on)
DS
g
FS
Forward Transconductance
= 5 V, I = 2 A
11
−
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 10 V, V = 0 V,
−
−
−
423
87
−
−
−
pF
iss
DS
GS
f = 1.0 MHz
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
48
rss
SWITCHING CHARACTERISTICS (Note 2)
t
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
V
= 10 V, I = 1 A,
−
−
−
−
−
−
−
6
12
13
29
4
ns
d(on)
DD
GS
D
= 4.5 V, R
= 6
ꢀ
GEN
t
r
6.5
14
t
d(off)
t
f
2
Q
V
DS
V
GS
= 10 V, I = 2 A,
4.5
0.89
0.95
6.3
−
nC
g
D
= 4.5 V
Q
gs
gd
Q
−
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward Voltage
= 0 V, I = 0.42 A (Note 2)
I
−
−
−
0.42
1.2
A
V
S
V
SD
V
GS
0.6
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
1. R
is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
ꢁ
JA
mounting surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
ꢁ
ꢁ
JC
CA
2
a) 250°C/W when mounted on a 0.02 in pad of 2 oz. copper.
b) 270°C/W when mounted on a minimum pad.
2. Pulse Test: Pulse Width ≤ 300 ꢂ s, Duty Cycle ≤ 2.0%
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2
FDN327N
TYPICAL CHARACTERISTICS
2.0
16
12
8
V
= 4.5 V
GS
V
GS
= 1.8 V
3.0 V
2.5 V
1.8
1.6
2.0 V
2.0 V
1.4
1.2
1.0
0.8
1.8 V
2.5 V
3.0 V
4
0
3.5 V
4.5 V
0
0.5
1
1.5
2
2.5
3
3.5
0
4
8
12
16
I , Drain Current (A)
D
V
DS
, Drain−Source Voltage (V)
Figure 1. On−Region Characteristics
Figure 2. On−Resistance Variation with Drain
Current and Gate Voltage
0.18
0.14
0.10
1.6
1.4
I
= 2 A
= 4.5 V
D
I
D
= 1 A
V
GS
1.2
1.0
0.8
0.6
T = 125°C
A
0.06
0.02
T = 25°C
A
−50
−25
0
25
50
75
100
125 150
1
2
3
4
5
T , Junction Temperature (5C)
J
V
GS
, Gate to Source Voltage (V)
Figure 3. On−Resistance Variation with Temperature
Figure 4. On−Resistance Variation with
Gate−to−Source Voltage
100
10
12
25°C
V = 0 V
GS
V
DS
= 5 V
T = −55°C
A
125°C
9
6
3
0
1
T = 125°C
A
0.1
25°C
0.01
−55°C
0.001
0.0001
0.5
1
1.5
2
2.5
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
SD
, Body Diode Forward Voltage (V)
V
GS
, Gate to Source Voltage (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
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3
FDN327N
TYPICAL CHARACTERISTICS (continued)
5
4
600
f = 1 MHz
= 0 V
I
D
= 2 A
V
GS
V
DS
= 5 V
10 V
500
400
300
200
100
0
C
iss
15 V
3
2
1
C
oss
C
rss
0
0
2
4
6
0
4
8
12
16
20
Q , Gate Charge (nC)
g
V
DS
, Drain to Source Voltage (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
20
15
10
100
Single Pulse
R
= 270°C/W
ꢁ
JA
RDS(on) Limit
T = 25°C
A
100 ꢂ s
10
1
1 ms
10 ms
V
= 4.5 V
GS
100 ms
0.1
5
0
Single Pulse
= 270°C/W
1 s
DC
R
ꢁ
JA
T = 25°C
A
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain−Source Voltage (V)
t , Time (s)
1
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum Power Dissipation
1
D = 0.5
0.2
0.1
0.1
0.01
R
R
(t) = r(t) * R
ꢁ
JA
ꢁ
JA
= 270°C/W
ꢁ
JA
0.05
P(pk)
0.02
0.01
t
1
t
2
Single Pulse
0.001
T − T = P * R (t)
ꢁ
JA
J
A
Duty Cycle, D = t / t
1
2
0.001
0.0001
0.01
0.1
1
10
100
1000
t
(s)
1, Time
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in
the United States and/or other countries. SUPERSOT is a trademark of Semiconductor Components Industries, LLC dba “onsemi”
or its affiliates and/or subsidiaries in the United States and/or other countries.
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23/SUPERSOTt−23, 3 LEAD, 1.4x2.9
CASE 527AG
ISSUE A
DATE 09 DEC 2019
GENERIC
MARKING DIAGRAM*
*This information is generic. Please refer to
XXX = Specific Device Code
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
M
= Month Code
XXXMG
G
= Pb−Free Package
G
(Note: Microdot may be in either location)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON34319E
SOT−23/SUPERSOT−23, 3 LEAD, 1.4X2.9
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
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© Semiconductor Components Industries, LLC, 2019
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