FDN335N [ONSEMI]

N 沟道，2.5V 指定，PowerTrench™ MOSFET，20V，1.7A，70mΩ;


型号：	FDN335N
厂家：	ONSEMI
描述：	N 沟道，2.5V 指定，PowerTrench™ MOSFET，20V，1.7A，70mΩ PC 开关光电二极管晶体管
文件：	总7页 (文件大小：271K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DATA SHEET

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MOSFET – N-Channel, 2.5 V

Specified, POWERTRENCH⁾

MAX

I MAX

DSS

DS(ON)

20 V

0.07 W @ 4.5 V

0.1 W @ 2.5 V

1.7 A

20 V, 1.7 A, 100 mW

FDN335N

General Description

This N−Channel 2.5 V specified MOSFET is produced using

onsemi advanced POWERTRENCH process that has been

especially tailored to minimize the on−state resistance and yet

SOT−23/SUPERSOTt−23, 3 LEAD, 1.4x2.9

CASE 527AG

maintain low gate charge for superior switching performance.

Features

MARKING DIAGRAM

• 1.7 A, 20 V

♦ R

= 0.07 W @ V = 4.5 V

DS(ON)

= 0.1 W @ V = 2.5 V

DS(ON)

335MG

• Low Gate Charge (3.5 nC typical)

• High Performance Trench Technology for Extremely Low R

• High Power and Current Handling Capability

• This Device is Pb−Free and is RoHS Compliant

DS(ON)

335 = Specific Device Code

= Date Code*

= Pb−Free Package

(Note: Microdot may be in either location)

Applications

* Date Code orientation and/or overbar may

vary depending upon manufacturing location

• DC−DC Converter

• Load Switch

ABSOLUTE MAXIMUM RATINGS (T = 25°C, unless otherwise noted)

PIN ASSIGNMENT

Symbol

Parameter

Drain−Source Voltage

Value

Unit

DSS

GSS

Gate−Source Voltage

1.7

Drain Current

Continuous (Note 1a)

Pulsed

Power Dissipation

for Single Operation

(Note 1a)

0.5

(Note 1b)

0.46

T , T

Operating and Storage Junction

Temperature Range

−55 to 150

°C

STG

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

ORDERING INFORMATION

See detailed ordering and shipping information on page 5 of

this data sheet.

THERMAL CHARACTERISTICS (T = 25°C, unless otherwise noted)

Symbol

Parameter

Max

Unit

Thermal Resistance, Junction−to−Ambient

(Note 1a)

250

°C/W

Thermal Resistance, Junction−to−Case

(Note 1)

°C/W

Publication Order Number:

December, 2022 − Rev. 4

FDN335N/D

FDN335N

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−Source Breakdown Voltage

= 0 V, I = 250 mA

−

DSS

Breakdown Voltage Temperature Coefficient I = 250 mA, Referenced to 25_C

−

mV/_C

DBV_DSS

DT_J

Zero Gate Voltage Drain Current

= 16 V, V = 0 V

−

DSS

Gate to Source Leakage Current, Forward

Gate to Source Leakage Current, Reverse

= 8 V, V = 0 V

100

−100

GSSF

GSSR

= −8 V, V = 0 V

ON CHARACTERISTICS (Note 2)

GS(th)

Gate Threshold Voltage

= V I = 250 mA

GS, D

0.4

0.9

1.5

Gate Threshold Voltage Temperature

Coefficient

I = 250 mA, Referenced to 25_C

−

−3

−

mV/_C

DV_GS(th)

DT_J

Static Drain−Source On−Resistance

= 4.5 V, I = 1.7 A

−

0.055

0.079

0.078

−

0.07

0.12

0.10

−

DS(ON)

= 4.5 V, I = 1.7 A, T = 125_C

= 2.5 V, I = 1.5 A

On−State Drain Current

= 4.5 V, V = 5 V

D(on)

Forward Transconductance

= 5 V, I = 1.5 A

−

DYNAMIC CHARACTERISTICS

Input Capacitance

= 10 V, V = 0 V, f = 1 MHz

−

310

−

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

SWITCHING CHARACTERISTICS (Note 2)

Turn−On Delay Time

Turn−On Rise Time

Turn−Off Delay Time

Turn−Off Fall Time

Total Gate Charge

Gate−Source Charge

Gate−Drain Charge

= 10 V, I = 1 A,

−

8.5

d(on)

= 4.5 V, R

= 6 W

GEN

d(off)

= 10 V, I = 1.7 A, V = 4.5 V

3.5

0.55

0.95

−

DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Maximum Continuous Drain−Source Diode

−

0.42

1.2

Forward Current

Source−Drain Diode Forward Voltage

= 0 V, I = 0.42 A (Note 2)

0.7

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

NOTES:

1. R

is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder

mounting surface of the drain pins. R

is guaranteed by design while R

is determined by the user’s board design.

a) 250°C/W when mounted on

b) 270°C/W when mounted on

a minimum pad

a 0.02 in pad of 2 oz copper

2. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%.

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FDN335N

TYPICAL CHARACTERISTICS

(T = 25°C unless otherwise noted)

2.2

= 4.5V

3.0V

2.5V

1.8

1.6

1.4

1.2

= 2.0V

3.5V

2.5V

2.0V

3.0V

3.5V

4.0V

4.5V

1.5V

0.8

0.5

1.5

2.5

I , Drain Current (A)

, Drain to Source Voltage (V)

Figure 1. On Region Characteristics

Figure 2. On−Resistance Variation with

Drain Current and Gate Voltage

0.24

0.2

1.6

1.4

1.2

= 1.7 A

= 0.85 A

= 4.5 V

0.16

0.12

0.08

0.04

T = 125°C

0.8

0.6

T = 25°C

−50 −25

100

125 150

, Gate to Source Voltage (V)

T , Junction Temperature (5C)

Figure 3. On−Resistance Variation

Figure 4. On−Resistance Variation

with Temperature

with Gate to Source Voltage

= 0 V

T = −55°C

= 5 V

T = 125°C

T = 25°C

T = 125°C

0.1

T = 25°C

0.01

0.001

0.0001

T = −55°C

0.2

0.4

0.6

0.8

1.2

1.4

, Gate to Source Voltage (V)

, Body Diode Forward Voltage (V)

Figure 5. Transfer Characteristics

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature

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FDN335N

TYPICAL CHARACTERISTICS (continued)

(T = 25°C unless otherwise noted)

500

f = 1 MHz

= 0 V

= 1.7 A

= 5 V

400

10 V

15 V

ISS

300

200

100

OSS

RSS

0.5

1.5

2.5

3.5

, Drain to Source Voltage (V)

Q , Gate Charge (nC)

Figure 7. Gate Charge Characteristics

Figure 8. Capacitance vs Drain to Source Voltage

1ms

Single Pulse

= 270°C/W

T = 25°C

10ms

100ms

This Area is

Limited by R

10s

DS(ON)

0.1

Single Pulse

= 4.5 V

= 270°C/W

T = 25°C

0.01

0.1

100

0.0001 0.001 0.01

0.1

100

1000

Single Pulse Time (s)

, Drain−Source Voltage (V)

Figure 9. Maximum Safe Operating Area

Figure 10. Single Pulse Maximum

Power Dissipation

D = 0.5

0.5

0.2

0.1

0.05

0.02

0.2

0.1

(t) = r(t) * R

= 270°C/W

0.05

P(pk)

0.02

0.01

t₁

Single Pulse

t₂

0.005

T − T = P * R (t)

Duty Cycle, D = t / t

0.002

0.001

0.0001

0.001

0.01

0.1

t , Time (s)

100

300

Figure 11. Transient Thermal Response Curve

NOTE: Thermal characterization performed using the conditions described in Note 1b.

Transient thermal response will change depending on the circuit board design.

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FDN335N

PACKAGE MARKING AND ORDERING INFORMATION

†

Device

Device Marking

Package

Shipping

FDN335N

335M (see Marking Diagram

on the front page)

SOT−23/SUPERSOT−23, 3 LEAD, 1.4x2.9

(Pb−Free, Halide Free)

3000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United

States and/or other countries.

SUPERSOT is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other

countries.

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MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

SOT−23/SUPERSOTt−23, 3 LEAD, 1.4x2.9

CASE 527AG

ISSUE A

DATE 09 DEC 2019

GENERIC

MARKING DIAGRAM*

*This information is generic. Please refer to

XXX = Specific Device Code

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “G”, may

or may not be present. Some products may

not follow the Generic Marking.

= Month Code

XXXMG

= Pb−Free Package

(Note: Microdot may be in either location)

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON34319E

SOT−23/SUPERSOT−23, 3 LEAD, 1.4X2.9

PAGE 1 OF 1

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically

disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the

rights of others.

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, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates

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A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any

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TECHNICAL PUBLICATIONS:

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For additional information, please contact your local Sales Representative at

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

FDN335N [ONSEMI]

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