FDN336P [ONSEMI]
双P沟道逻辑电平PowerTrench® MOSFET;
| 型号： | FDN336P |
| 厂家： | 
ONSEMI |
| 描述： | 双P沟道逻辑电平PowerTrench® MOSFET |
| 文件： | 总6页 (文件大小：262K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – Single P-Channel
POWERTRENCH)
SOT−23
CASE 527AG
2.5 V Specified
FDN336P
Description
D
This P−Channel 2.5 V specified MOSFET is produced using
onsemi’s advanced POWERTRENCH process that has been
especially tailored to minimize the on−state resistance and yet
maintain low gate charge for superior switching performance.
These devices are well suited for portable electronics applications:
load switching and power management, battery charging circuits and
DC−DC conversion.
G
S
MARKING DIAGRAM
Features
• −1.3 A, −20 V
♦ R
♦ R
= 0.20 ꢀ ꢁ V = −4.5 V
GS
DS(on)
336MG
= 0.27 ꢀ ꢁ V = −2.5 V
DS(on)
GS
G
• Low Gate Charge (3.6 nC Typical)
• High Performance Trench Technology for Extremely Low R
DS(ON)
336 = Specific Device Code
TM
• SUPERSOT −3 Provides Low R
and 30% Higher Power
DS(ON)
M
G
= Month Code
= Pb−Free Package
Handling Capability than SOT23 in the Same Footprint
ABSOLUTE MAXIMUM RATINGS T = 25°C unless otherwise noted
A
ORDERING INFORMATION
Symbol
Parameter
Drain to Source Voltage
Gate to Source Voltage
Value
−20
8
Unit
V
†
Device
Shipping
3000 /
Tape & Reel
Package
V
DSS
GSS
FDN336P
SOT−23
(Pb−Free)
V
V
I
D
A
Drain Current
− Continuous (Note 1a)
− Pulsed
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
−1.3
−10
P
D
W
Maximum Power Dissipation
(Note 1a)
(Note 1b)
0.5
0.46
T , T
Operating and Storage Junction
Temperature Range
−55 to +150
°C
J
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
March, 2023 − Rev 5
FDN336P/D
FDN336P
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
250
75
Unit
°C/W
°C/W
R
Thermal Resistance, Junction−to−Ambient (Note 1a)
Thermal Resistance, Junction−to−Case (Note 1)
θ
JA
JC
R
θ
ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BV
Drain to Source Breakdown Voltage
V
I
= 0 V, I = −250 ꢂ A
−20
−
−
−
V
DSS
GS
D
Breakdown Voltage Temperature
Coefficient
= −250 ꢂ A, Referenced to 25°C
−
−16
mV/°C
ꢃ BVDSS
ꢃ TJ
D
I
Zero Gate Voltage Drain Current
V
V
V
V
= −16 V, V = 0 V
−
−
−
−
−
−
−
−
−1
−10
100
−100
ꢂ A
ꢂ A
nA
nA
DSS
DS
GS
= −16 V, V = 0 V, T = 55°C
DS
GS
GS
GS
J
I
Gate−Body Leakage Forward
Gate−Body Leakage Reverse
= 8 V, V = 0 V
DS
GSSF
I
= −8 V, V = 0 V
DS
GSSR
On Characteristics (Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V , I = −250 ꢂ A
−0.4
−0.9
−1.5
V
GS D
Gate Threshold Voltage
Temperature Coefficient
I = −250 ꢂA, Referenced to 25°C
D
−
3
−
mV/°C
ꢃ VGS(th)
ꢃ TJ
R
Static Drain−Source On−Resistance
V
GS
V
GS
V
GS
= −4.5 V, I = −1.3 A
−
−
−
0.122
0.18
0.19
0.2
0.32
0.27
ꢀ
DS(on)
D
= −4.5 V, I = −1.3 A, T = 125°C
D
J
= −2.5 V, I = −1.1 A
D
I
On−State Drain Current
V
= −4.5 V, V = −5 V
−5
−
−
−
A
S
D(on)
GS
DS
DS
g
FS
Forward Transconductance
V
= −4.5 V, I = −2 A
4
D
Dynamic Characteristics
C
Input Capacitance
V
DS
= −10 V, V = 0 V, f = 1.0 MHz
−
−
−
330
80
−
−
−
pF
pF
pF
iss
GS
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
35
rss
Switching Characteristics (Note 2)
t
Turn−On Delay Time
Turn−On Rise Time
Turn−Off Delay Time
Turn−Off Fall Time
Total Gate Change
Gate−Source Change
Gate−Drain Change
V
V
= −5 V, I = −0.5 A,
−
−
−
−
−
−
−
7
15
22
26
12
5
ns
ns
d(on)
DD
GS
D
= −4.5 V, R
= 6 Ω
GEN
t
r
12
16
5
t
ns
d(off)
t
f
ns
Q
V
DS
V
GS
= −10 V, I = −2 A,
3.6
0.8
0.7
nC
nC
nC
g
D
= −4.5 V
Q
−
gs
gd
Q
−
Drain−Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current
Drain−Source Diode Forward Voltage = 0 V, I = −0.42 A (Note 2)
I
−
−
−
−0.42
−1.2
A
V
S
V
SD
V
GS
−0.7
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
1. R
is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
ꢄ
JA
mounting surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
ꢄ
ꢄ
JC
CA
b) 270°C/W on a minimum
a) 250°C/W when
2
mounting pad of 2 oz. Cu.
mounted on a 0.02 in
Pad of 2 oz. Cu.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 ꢂ s, Duty Cycle ≤ 2.0%
www.onsemi.com
2
FDN336P
TYPICAL CHARACTERISTICS
2
10
8
V
GS
= −4.5 V
1.8
−3.5 V
−3.0 V
V
GS
= −2.5 V
1.6
1.4
6
4
2
−2.5 V
−3.0 V
−3.5 V
1.2
1
−4.0 V
−4.5 V
−2.0 V
0.8
0
0
1
2
3
4
5
0
2
4
6
8
10
−I , DRAIN CURRENT (A)
D
−V , DRAIN − SOURCE VOLTAGE (V)
DS
Figure 2. On−Resistance Variation with
Figure 1. On−Region Characteristics
Drain Current and Gate
0.5
0.4
1.6
1.4
1.2
I
= −0.6 A
I
V
= −1.3 A
D
D
= −4.5 V
GS
0.3
0.2
1
0.8
0.6
T = 125°C
A
0.1
0
25°C
150
−50 −25
0
0
2
4
6
8
10
25
50
75
100 125
−V , GATE TO SOURCE VOLTAGE (V)
GS
T , JUNCTION TEMPERATURE (5C)
J
Figure 4. On−Resistance Variation with
Gate−to−Source Voltage
Figure 3. On−Resistance Variation with
Temperature
10
1
4
3
2
V
GS
= 0 V
V
DS
= −5 V
T = −55°C
A
25°C
125°C
T = 125°C
J
25°C
− 55°C
0.1
0.01
0.001
1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.5
1
1.5
2
2.5
−V , BODY DIODE FORWARD VOLTAGE (V)
SD
−V , GATE TO SOURCE VOLTAGE (V)
GS
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation with
Source Current and Temperature
www.onsemi.com
3
FDN336P
TYPICAL CHARACTERISTICS (CONTINUED)
700
400
5
4
3
2
1
0
I
D
= −1.3 A
V
= −5 V
DS
C
ISS
−10 V
−15 V
200
100
C
OSS
40
f = 1 MHz
= 0 V
C
RSS
V
GS
0.1
0.2
0.5
1
2
5
10
20
0
1
2
3
4
Q , GATE CHARGE (nC)
g
−V , DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
30
10
50
40
30
20
10
0
SINGLE PULSE
= 270°C/W
T = 25°C
A
R
ꢄ
JA
1 ms
R
LIMIT
DS(ON)
10 ms
3
1
100 ms
0.3
0.1
1 s
10 s
DC
V
= −4.5 V
GS
SINGLE PULSE
R
= 270°C/W
TA = 25°C
ꢄ
JA
0.03
0.01
0.2
0.5
1
3
5
10
30
0.0001 0.001
0.1
1
10
100 300
0.01
SINGLE PULSE TIME (s)
−V , DRAIN − SOURCE VOLTAGE (V)
DS
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum
Power Dissipation
1
D = 0.5
0.2
0.5
0.2
0.1
R JA (t) = r(t) * R JA
q
q
R JA = 270 5C/W
q
0.1
0.05
0.05
0.02
0.01
P(pk)
0.02
0.01
t1
Single Pulse
t 2
T
− T = P * R JA (t)
q
J
A
0.005
Duty Cycle, D = t1/t2
0.002
0.001
0.0001
0.001
0.01
0.1
t , TIME (s)
1
10
100
300
1
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
POWERTRENCH is registered trademark and SUPERSOT is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries.
www.onsemi.com
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23/SUPERSOTt−23, 3 LEAD, 1.4x2.9
CASE 527AG
ISSUE A
DATE 09 DEC 2019
GENERIC
MARKING DIAGRAM*
*This information is generic. Please refer to
XXX = Specific Device Code
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
M
= Month Code
XXXMG
G
= Pb−Free Package
G
(Note: Microdot may be in either location)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON34319E
SOT−23/SUPERSOT−23, 3 LEAD, 1.4X2.9
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
FDN336PD87Z
Small Signal Field-Effect Transistor, 1.3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3
FAIRCHILD
FDN337ND87Z
Small Signal Field-Effect Transistor, 2.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3
FAIRCHILD
FDN337NL99Z
Small Signal Field-Effect Transistor, 2.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3
FAIRCHILD
FDN337N_NL
Small Signal Field-Effect Transistor, 2.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明