FDN337N-F169 [ONSEMI]

N 沟道，逻辑电平增强型场效应晶体管，30V，2.2A，65mΩ;


型号：	FDN337N-F169
厂家：	ONSEMI
描述：	N 沟道，逻辑电平增强型场效应晶体管，30V，2.2A，65mΩ 晶体管场效应晶体管
文件：	总6页 (文件大小：260K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DATA SHEET

www.onsemi.com

Transistor - N-Channel,

Logic Level, Enhancement

Mode Field Effect

FDN337N

General Description

SUPERSOTt−3 N−Channel logic level enhancement mode power

field effect transistors are produced using onsemi’s proprietary, high

cell density, DMOS technology. This very high density process is

especially tailored to minimize on−state resistance. These devices are

particularly suited for low voltage applications in notebook

computers, portable phones, PCMCIA cards, and other battery

powered circuits where fast switching, and low in−line power loss are

needed in a very small outline surface mount package.

SOT−23−3

CASE 527AG

MARKING DIAGRAM

&E&Y

618&E&G

Features

• 2.2 A, 30 V

♦ R

= 0.065 ꢀ @ V = 4.5 V

DS(on)

618

= Designates Space

= 0.082 ꢀ @ V = 2.5 V

DS(on)

= Binary Calendar Year Coding Scheme

= Specific Device Code

= Date Code

• Industry Standard Outline SOT−23 Surface Mount Package Using

Proprietary SUPERSOT−3 Design for Superior Thermal and

Electrical Capabilities

ORDERING INFORMATION

• High Density Cell Design for Extremely Low R

DS(on)

• Exceptional on−Resistance and Maximum DC Current Capability

• This Device is Pb−Free and Halogen Free

†

Device

FDN337N

Package

Shipping

SOT−23−3

(Pb−Free)

3000 /

Tape & Reel

ABSOLUTE MAXIMUM RATINGS

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

T = 25°C unless otherwise noted.

Symbol

Parameter

Ratings

Unit

Drain−Source Voltage

DSS

GSS

Gate−Source Voltage − Continuous

Drain/Output Current – Continuous

Drain/Output Current – Pulsed

Maximum Power Dissipation (Note 1a)

Maximum Power Dissipation (Note 1b)

2.2

0.5

0.46

T , T

Operating and Storage Temperature

Range

−55 to +150

°C

STG

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

T = 25°C unless otherwise noted.

Symbol

Parameter

Ratings

Unit

Thermal Resistance,

Junction−to−Ambient (Note 1a)

250

°C/W

ꢁ

Thermal Resistance,

Junction−to−Case (Note 1)

°C/W

ꢁ

Publication Order Number:

March, 2022 − Rev. 4

FDN337N/D

FDN337N

ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted.

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

= 0 V, I = 250 ꢂ A

−

DSS

Breakdown Voltage Temperature

Coefficient

= 250 ꢂ A,

Referenced to 25°C

−

mV/°C

ꢃ BV_DSS

ꢃ T_J

Zero Gate Voltage Drain Current

= 24 V, V = 0 V

−

ꢂ A

DSS

= 24 V, V = 0 V,

T = 55°C

Gate–Body Leakage, Forward

Gate–Body Leakage, Reverse

= 8 V, V = 0 V

−

100

GSSF

= −8 V, V = 0 V

−100

GSSR

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

= V , I = 250 ꢂ A

0.4

0.7

GS(th)

GS D

Gate Threshold Voltage Temperature

Coefficient

= 250 ꢂ A,

Referenced to 25°C

−

−2.3

−

mV/°C

ꢃ V_GS(th)

ꢃ T_J

Static Drain–Source On–Resistance

= 4.5 V, I = 2.2 A

−

0.054

0.08

0.065

0.11

ꢀ

DS(on)

= 4.5 V, I = 2.2 A,

T = 125°C

= 2.5 V, I = 2 A

−

0.07

−

0.082

On–State Drain Current

= 4.5 V, V = 5 V

−

D(on)

Forward Transconductance

= 5 V, I = 2.2 A

DYNAMIC CHARACTERISTICS

Input Capacitance

= 10 V, V = 0 V,

−

300

145

−

iss

f = 1.0 MHz

Output Capacitance

oss

Reverse Transfer Capacitance

rss

SWITCHING CHARACTERISTICS (Note 2)

Turn–On Delay Time

Turn–On Rise Time

Turn–Off Delay Time

Turn–Off Fall Time

Total Gate Charge

Gate–Source Charge

Gate–Drain Charge

= 5 V, I = 1 A,

−

d(on)

= 4.5 V, R

= 6 ꢀ

GEN

d(off)

= 10 V, I = 2.2 A,

= 4.5 V

1.1

1.9

−

DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Maximum Continuous Drain–Source Diode Forward Current

Drain–Source Diode Forward Voltage

= 0 V, I = 0.42 A

−

0.42

1.2

0.65

(Note 2)

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

NOTE:

1. R

is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder

ꢁ

mounting surface of the drain pins. R

is guaranteed by design while R

is determined by the user’s board design.

ꢁ

Typical R

using the board layouts shown below on FR−4 PCB in a still air environment:

ꢁ

a) 250°C/W when mounted on a 0.02 in pad of 2 oz. copper.

b) 270°C/W when mounted on a 0.001 in pad

of 2 oz. copper.

Scale 1:1 on letter size paper

2. Pulse Test: Pulse Width ≤ 300 ꢂ s, Duty Cycle ≤ 2.0%.

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FDN337N

TYPICAL CHARACTERISTICS

2.0

1.8

3.0 V

= 4.5 V

2.5 V

2.0 V

= 2.0 V

1.6

1.4

1.2

1.0

0.8

2.5 V

1.5 V

3.0 V

3.5 V

4.5 V

0.3

0.6

0.9

1.2

1.5

I , Drain Current (A)

, Drain To Source Voltage (V)

Figure 1. On−Region Characteristics

Figure 2. On−Resistance Variation with Drain

Current and Gate Voltage

0.25

0.20

1.6

1.4

= 2.2 A

= 4.5 V

= 1.1 A

1.2

1.0

0.8

0.6

0.15

0.10

0.05

125°C

25°C

−50

−25

100 125

150

T , Junction Temperature (5C)

Figure 3. On−Resistance Variation with Temperature

, Gate to Source Voltage (V)

Figure 4. On−Resistance Variation with

Gate−to−Source Voltage

= 0 V

25°C

125°C

T = −55°C

= 5.0 V

T = 125°C

0.5

0.1

25°C

−55°C

0.01

0.001

0.0001

0.5

1.5

2.5

0.2

0.4

0.6

0.8

1.0

, Gate to Source Voltage (V)

, Body Diode Forward Voltage (V)

Figure 5. Transfer Characteristics

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature

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FDN337N

TYPICAL CHARACTERISTICS (continued)

1000

= 2.2 A

= 5 V

10 V

500

200

iss

15 V

oss

100

f = 1 MHz

= 0 V

rss

0.1

0.2

0.5

Q , Gate Charge (nC)

, Drain to Source Voltage (V)

Figure 7. Gate Charge Characteristics

Figure 8. Capacitance Characteristics

Limit

1 ms

10 ms

DS(on)

Single Pulse

= 270°C/W

ꢁ

T = 25°C

100 ms

0.3

0.1

= 4.5 V

1 s

Single Pulse

= 250°C/W

10 s

ꢁ

0.03

0.01

T = 25°C

0.1

0.5

0.0001 0.001 0.01

0.1

100 300

, Drain−Source Voltage (V)

Single Pulse Time (s)

Figure 9. Maximum Safe Operating Area

Figure 10. Single Pulse Maximum Power Dissipation

D = 0.5

0.5

0.2

0.1

(t) = r(t) * R

ꢁ

0.1

270°C/W

ꢁ

JA =

0.05

0.02

0.01

P(pk)

0.02

0.01

0.005

T − T = P * R (t)

Single Pulse

ꢁ

0.002

0.001

Duty Cycle, D = t / t

0.0001

0.001

0.01

0.1

100

300

(s)

1, Time

Figure 11. Transient Thermal Response Curve

Thermal characterization performed using the conditions described in Note 1b.

Transient thermal response will change depending on the circuit board design.

SUPERSOT is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the

United States and/or other countries.

www.onsemi.com

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

SOT−23/SUPERSOTt−23, 3 LEAD, 1.4x2.9

CASE 527AG

ISSUE A

DATE 09 DEC 2019

GENERIC

MARKING DIAGRAM*

*This information is generic. Please refer to

XXX = Specific Device Code

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “G”, may

or may not be present. Some products may

not follow the Generic Marking.

= Month Code

XXXMG

= Pb−Free Package

(Note: Microdot may be in either location)

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON34319E

SOT−23/SUPERSOT−23, 3 LEAD, 1.4X2.9

PAGE 1 OF 1

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically

disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the

rights of others.

www.onsemi.com

onsemi,

, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates

and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.

A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any

products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the

information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use

of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products

and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information

provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may

vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license

under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems

or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should

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and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

ADDITIONAL INFORMATION

TECHNICAL PUBLICATIONS:

Technical Library: www.onsemi.com/design/resources/technical−documentation

onsemi Website: www.onsemi.com

ONLINE SUPPORT: www.onsemi.com/support

For additional information, please contact your local Sales Representative at

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

FDN337N-F169 [ONSEMI]

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