FDN339AN [ONSEMI]

N 沟道，2.5V 指定，PowerTrench® MOSFET，20V，3A，35mΩ;


型号：	FDN339AN
厂家：	ONSEMI
描述：	N 沟道，2.5V 指定，PowerTrench® MOSFET，20V，3A，35mΩ
文件：	总6页 (文件大小：266K)
中文：	中文翻译
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DATA SHEET

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MOSFET – N-Channel

POWERTRENCH⁾

SOT−23,

CASE 527AG

2.5 V Specified

FDN339AN

Description

This N−Channel 2.5 V specified MOSFET is produced using

onsemi’s advanced PowerTrench process that has been especially

tailored to minimize the on−state resistance and yet maintain low gate

charge for superior switching performance.

Features

• 3 A, 20 V

MARKING DIAGRAM

♦ R

= 0.035 ꢀ ꢁ V = 4.5 V

DS(on)

= 0.050 ꢀ ꢁ V = 2.5 V

DS(on)

• Low Gate Charge (7 nC Typical)

• High Performance Trench technology for Extremely Low R

• High Power and Current Handling Capability

DS(ON)

339MG

Typical Applications

• DC−DC Converter

• Load Switch

339 = Specific Device Code

= Month Code

= Pb−Free Package

ABSOLUTE MAXIMUM RATINGS T = 25°C unless otherwise noted

ORDERING INFORMATION

Symbol

Parameter

Drain to Source Voltage

Gate to Source Voltage

Value

Unit

†

Device

Shipping

3000 /

Tape & Reel

Package

DSS

GSS

FDN339AN

SOT−23

(Pb−Free)

Drain Current

− Continuous (Note 1a)

− Pulsed

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Power Dissipation for Single

Operation

(Note 1a)

(Note 1b)

0.5

0.46

T , T

Operating and Storage Junction

Temperature Range

−55 to +150

°C

stg

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

Publication Order Number:

February, 2023 − Rev 4

FDN339AN/D

FDN339AN

THERMAL CHARACTERISTICS

Symbol

Parameter

Value

250

Unit

°C/W

Thermal Resistance, Junction−to−Ambient (Note 1a)

Thermal Resistance, Junction−to−Case (Note 1)

ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

Off Characteristics

Drain to Source Breakdown Voltage

= 0 V, I = 250 ꢂ A

−

DSS

Breakdown Voltage Temperature

Coefficient

= 250 ꢂ A, Referenced to 25°C

−

mV/°C

ꢃ BV_DSS

ꢃ T_J

Zero Gate Voltage Drain Current

= 16 V, V = 0 V

−

ꢂ A

DSS

Gate−Body Leakage Current, Forward

Gate−Body Leakage Current, Reverse

= 8 V, V = 0 V

100

−100

GSSF

GSSR

= −8 V, V = 0 V

On Characteristics (Note 2)

GS(th)

Gate Threshold Voltage

= V , I = 250 ꢂ A

0.4

0.85

1.5

GS D

Gate Threshold Voltage

Temperature Coefficient

I = ꢄ ꢅ ꢆ ꢂA, Referenced to 25°C

−

−3

−

mV/°C

ꢃ V_GS(th)

ꢃ T_J

Static Drain−Source On−Resistance

= 4.5 V, I = 3 A

−

0.029

0.040

0.039

0.035

0.061

0.050

ꢀ

DS(on)

= 4.5 V, I = 3 A T = 125°C

= 2.5 V, I = 2.4 A

On−State Drain Current

= 4.5 V, V = 5 V

−

D(on)

Forward Transconductance

= 5 V, I = 3 A

Dynamic Characteristics

Input Capacitance

= 10 V, V = 0 V, f = 1.0 MHz

−

700

175

−

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

Switching Characteristics (Note 2)

Turn−On Delay Time

Turn−On Rise Time

Turn−Off Delay Time

Turn−Off Fall Time

Total Gate Change

Gate−Source Change

Gate−Drain Change

= 10 V, I = 1 A,

−

d(on)

= 4.5 V, R

= 6 Ω

GEN

d(off)

= 10 V, I = 3 A,

= 4.5 V

1.2

1.9

−

Drain−Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain–Source Diode Forward Current

Drain−Source Diode Forward Voltage = 0 V, I = 0.42 A (Note 2)

−

0.42

1.2

0.65

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

NOTES:

1. R

is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder

ꢇ

mounting surface of the drain pins. R

is guaranteed by design while R

is determined by the user’s board design.

ꢇ

b) 270°C/W on a minimum

a) 250°C/W when

mounting pad of 2 oz. Cu.

mounted on a 0.02 in

Pad of 2 oz. Cu.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width ≤ 300 ꢂ s, Duty Cycle ≤ 2.0%

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FDN339AN

TYPICAL CHARACTERISTICS

= 4.5 V

2.5 V

= 2.0 V

1.8

3.0 V

1.6

1.4

2.0V

2.5 V

3.0 V

1.2

3.5 V

4.0 V

4.5 V

1.5 V

0.8

0.5

1.5

2.5

I , DRAIN CURRENT (A)

, DRAIN TO SOURCE VOLTAGE (V)

Figure 2. On−Resistance Variation With

Figure 1. On−Region Characteristics

Drain Current and Gate Voltage

0.1

1.6

1.4

1.2

= 3 A

= 4.5 V

= 1.5 A

0.08

0.06

0.04

0.02

T = 125°C

0.8

0.6

T = 25°C

150

−50 −25

100 125

, GATE TO SOURCE VOLTAGE (V)

T , JUNCTION TEMPERATURE (5C)

Figure 4. On−Resistance Variation with

Gate−to−Source Voltage

Figure 3. On−Resistance Variation with

Temperature

100

T = − 55°C

= 0 V

= 5 V

25°C

125°C

T = 125°C

25°C

0.1

− 55°C

0.01

0.001

0.0001

0.5

0.0

0.2

0.4

0.6

0.8

1.2

1.5

2.5

, BODY DIODE FORWARD VOLTAGE (V)

, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure 6. Body Diode Forward Voltage Variation with

Source Current and Temperature

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FDN339AN

TYPICAL CHARACTERISTICS (CONTINUED)

1000

f = 1 MHz

= 0 V

= 3 A

= 5 V

10 V

800

15 V

ISS

600

400

200

OSS

RSS

Q , GATE CHARGE (nC)

, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics

Figure 8. Capacitance Characteristics

100

SINGLE PULSE

= 270°C/W

T = 25°C

LIMIT

DS(ON)

ꢇ

1 ms

10 ms

100 ms

1 s

10 s

= 4.5 V

0.1

0.01

SINGLE PULSE

= 270°C/W

TA = 25°C

ꢇ

0.1

100

0.0001 0.001

0.01

0.1

100 1000

SINGLE PULSE TIME (s)

, DRAIN − SOURCE VOLTAGE (V)

Figure 9. Maximum Safe Operating Area

Figure 10. Single Pulse Maximum

Power Dissipation

D = 0.5

0.2

0.5

0.2

0.1

R JA (t) = r(t) * R JA

R JA = 270 5C/W

0.1

0.05

0.02

0.01

P(pk)

0.02

0.01

t₁

Single Pulse

t ₂

− T = P * R JA (t)

0.005

Duty Cycle, D = t1/t2

0.002

0.001

0.0001

0.001

0.01

0.1

t , TIME (s)

100

300

Figure 11. Transient Thermal Response Curve

Thermal characterization performed using the conditions described in Note 1b.

Transient themal response will change depending on the circuit board design.

POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United

States and/or other countries.

www.onsemi.com

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

SOT−23/SUPERSOTt−23, 3 LEAD, 1.4x2.9

CASE 527AG

ISSUE A

DATE 09 DEC 2019

GENERIC

MARKING DIAGRAM*

*This information is generic. Please refer to

XXX = Specific Device Code

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “G”, may

or may not be present. Some products may

not follow the Generic Marking.

= Month Code

XXXMG

= Pb−Free Package

(Note: Microdot may be in either location)

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON34319E

SOT−23/SUPERSOT−23, 3 LEAD, 1.4X2.9

PAGE 1 OF 1

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically

disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the

rights of others.

www.onsemi.com

onsemi,

, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates

and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.

A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any

products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the

information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use

of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products

and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information

provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may

vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license

under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems

or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should

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and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

ADDITIONAL INFORMATION

TECHNICAL PUBLICATIONS:

Technical Library: www.onsemi.com/design/resources/technical−documentation

onsemi Website: www.onsemi.com

ONLINE SUPPORT: www.onsemi.com/support

For additional information, please contact your local Sales Representative at

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

FDN339AN [ONSEMI]

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