FDN5618P [ONSEMI]

60V，P 沟道，PowerTrench® MOSFET，-1.25A，170mΩ;


型号：	FDN5618P
厂家：	ONSEMI
描述：	60V，P 沟道，PowerTrench® MOSFET，-1.25A，170mΩ PC 开关脉冲光电二极管晶体管
文件：	总6页 (文件大小：272K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DATA SHEET

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MOSFET – P-Channel, Logic

Level, POWERTRENCH⁾

SOT−23−3

CASE 527AG

60 V

FDN5618P

General Description

This 60 V P−Channel MOSFET uses onsemi’s high voltage

POWERTRENCH process. It has been optimized for power

management applications.

Features

 −1.25 A, −60 V

 R

= 0.170 ꢀ @ V = −10 V

DS(on)

MARKING DIAGRAM

= 0.230 ꢀ @ V = −4.5 V

DS(on)

 Fast Switching Speed

 High Performance Trench Technology for Extremely Low R

 This Device is Pb−Free and Halogen Free

&E&Y

618&E&G

DS(on)

Applications

 DC−DC Converters

 Load Switch

 Power Management

618

= Designates Space

= Binary Calendar Year Coding Scheme

= Specific Device Code

= Date Code

ABSOLUTE MAXIMUM RATINGS T = 25C unless otherwise noted.

ORDERING INFORMATION

Symbol

Parameter

Drain−Source Voltage

Ratings

−60

Unit

†

Device

FDN5618P

Package

Shipping

DSS

GSS

SOT−23−3

(Pb−Free)

3000 /

Gate−Source Voltage

20

Tape & Reel

Drain Current – Continuous (Note 1a)

Drain Current – Pulsed

−1.25

−10

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Maximum Power Dissipation (Note 1a)

Maximum Power Dissipation (Note 1b)

0.5

0.46

T ,

STG

Operating and Storage Junction

Temperature Range

55 to +150

C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Symbol

Parameter

Ratings

Unit

Thermal Resistance,

Junction−to−Ambient (Note 1a)

250

C/W

ꢁ

Thermal Resistance,

Junction−to−Case (Note 1)

C/W

ꢁ

 Semiconductor Components Industries, LLC, 2000

Publication Order Number:

December, 2022 − Rev. 4

FDN5618P/D

FDN5618P

ELECTRICAL CHARACTERISTICS T = 25C unless otherwise noted.

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

= 0 V, I = −250 ꢂ A

−60

−

DSS

Breakdown Voltage Temperature

Coefficient

= −250 ꢂ A,

Referenced to 25C

−

−58

mV/C

ꢃ BV_DSS

ꢃ T_J

Zero Gate Voltage Drain Current

Gate–Body Leakage, Forward

Gate–Body Leakage, Reverse

= −48 V, V = 0 V

−

−1

ꢂ A

DSS

= 20 V, V = 0 V

100

GSSF

GSSR

= −20 V, V = 0 V

−100

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

= V , I = −250 ꢂ A

−1

−1.6

−3

GS(th)

GS D

Gate Threshold Voltage Temperature

Coefficient

= −250 ꢂ A,

Referenced to 25C

−

mV/C

ꢃ V_GS(th)

ꢃ T_J

Static Drain–Source On–Resistance

= −10 V, I = −1.25 A

−

0.148

0.185

0.245

0.170

0.230

0.315

ꢀ

DS(on)

= −4.5 V, I = −1.0 A

= −10 V, I = −3 A,

T = 125C

On–State Drain Current

= −10 V, V = −5 V

−5

−

D(on)

Forward Transconductance

= −5 V, I = −1.25 A

−

4.3

DYNAMIC CHARACTERISTICS

Input Capacitance

= −30 V, V = 0 V,

−

430

−

iss

f = 1.0 MHz

Output Capacitance

oss

Reverse Transfer Capacitance

rss

SWITCHING CHARACTERISTICS (Note 2)

Turn–On Delay Time

Turn–On Rise Time

Turn–Off Delay Time

Turn–Off Fall Time

Total Gate Charge

Gate–Source Charge

Gate–Drain Charge

= −30 V, I = −1 A,

−

6.5

d(on)

= −10 V, R

= 6 ꢀ

GEN

16.5

d(off)

= −30 V, I = −1.25 A,

8.6

1.5

1.3

13.8

−

= −10 V

−

DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Maximum Continuous Drain–Source Diode Forward Current

Drain–Source Diode Forward Voltage = 0 V, I = −0.42 A

−

−0.42

−1.2

−0.7

(Note 2)

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. R

is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder

ꢁ

mounting surface of the drain pins. R

is guaranteed by design while R

is determined by the user’s board design.

ꢁ

a) 250C/W when mounted on a 0.02 in pad of 2 oz. copper.

b) 270C/W when mounted on a minimum pad.

2. Pulse Test: Pulse Width  300 ꢂ s, Duty Cycle  2.0%

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FDN5618P

TYPICAL CHARACTERISTICS

2.2

2.0

= −10 V

−6.0 V

−4.5 V

−4.0 V

= −3.0 V

1.8

1.6

1.4

1.2

1.0

0.8

−3.5 V

−3.0 V

−2.5 V

−4.0 V

−4.5 V

−6.0 V

−10 V

−I , Drain Current (A)

−V , Drain To Source Voltage (V)

Figure 1. On−Region Characteristics

Figure 2. On−Resistance Variation with Drain

Current and Gate Voltage

1.3

1.2

0.6

0.5

0.4

= −1.25 A

= −0.65 A

= −10 V

1.1

1.0

0.9

0.8

T = 125C

0.3

0.2

0.1

T = 25C

−50

−25

100 125

150

100

T , Junction Temperature (5C)

, Gate To Source Voltage (V)

Figure 3. On−Resistance Variation with Temperature

Figure 4. On−Resistance Variation with

Gate−to−Source Voltage

= −5 V

= 0 V

T = 125C

25C

T = 125C

0.1

0.01

0.001

25C

−55C

0.0001

1.5

2.5

3.5

0.2

0.4

0.6

0.8

1.2

1.4

, Gate To Source Voltage (V)

, Body Diode Forward Voltage (V)

Figure 5. Transfer Characteristics

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature

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FDN5618P

TYPICAL CHARACTERISTICS (CONTINUED)

700

= −1.25 A

= −20 V

f = 1 MHz

= 0 V

−30 V

600

500

400

300

−40 V

iss

200

100

oss

rss

Q , Gate Charge (nC)

, Drain To Source Voltage (V)

Figure 7. Gate Charge Characteristics

Figure 8. Capacitance Characteristics

100

Single Pulse

= 350C/W

ꢁ

1 ms

T = 25C

Limit

DS(on)

10 ms

0.1

0.01

100 ms

= −10 V

1 s

Single Pulse

10 s

= 270C/W

ꢁ

T = 25C

0.001

0.1

100

0.001

0.01

0.1

100

1000

, Drain−Source Voltage (V)

t , Time (s)

Figure 9. Maximum Safe Operating Area

Figure 10. Single Pulse Maximum Power Dissipation

D = 0.5

0.2

0.1

0.01

(t)= r(t) * R

ꢁ

0.05

350C/W

ꢁ

JA =

0.02

P(pk)

0.01

Single Pulse

T − T = P * R (t)

ꢁ

Duty Cycle, D = t / t

0.001

0.0001

0.001

0.01

0.1

t , Time (s)

100

1000

Figure 11. Transient Thermal Response Curve

Thermal characterization performed using the conditions described in Note 1a.

Transient thermal response will change depending on the circuit board design.

SUPERSOT is a trademark and POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi”

or its affiliates and/or subsidiaries in the United States and/or other countries.

www.onsemi.com

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

SOT−23/SUPERSOTt−23, 3 LEAD, 1.4x2.9

CASE 527AG

ISSUE A

DATE 09 DEC 2019

GENERIC

MARKING DIAGRAM*

*This information is generic. Please refer to

XXX = Specific Device Code

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “G”, may

or may not be present. Some products may

not follow the Generic Marking.

= Month Code

XXXMG

= Pb−Free Package

(Note: Microdot may be in either location)

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON34319E

SOT−23/SUPERSOT−23, 3 LEAD, 1.4X2.9

PAGE 1 OF 1

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically

disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the

rights of others.

www.onsemi.com

onsemi,

, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates

and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.

A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any

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information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use

of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products

and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information

provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may

vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license

under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems

or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should

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ADDITIONAL INFORMATION

TECHNICAL PUBLICATIONS:

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onsemi Website: www.onsemi.com

ONLINE SUPPORT: www.onsemi.com/support

For additional information, please contact your local Sales Representative at

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

FDN5618P [ONSEMI]

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