FDN8601 [ONSEMI]
N 沟道，PowerTrench® MOSFET，100V，2.7A，109mΩ;
| 型号： | FDN8601 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，100V，2.7A，109mΩ PC 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：314K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – N-Channel,
POWERTRENCH)
V
r
MAX
I MAX
D
DS
DS(on)
20 V
109 mW @ 10 V
175 mW @ 6 V
2.7 A
100 V, 2.7 A, 109 mW
FDN8601
General Description
This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been optimized for r
switching performance and ruggedness.
,
DS(on)
SOT−23/SUPERSOTt−23, 3 LEAD, 1.4x2.9
CASE 527AG
Features
• Max r
• Max r
= 109 mW at V = 10 V, I = 1.5 A
GS D
DS(on)
DS(on)
MARKING DIAGRAM
8601M
= 175 mW at V = 6 V, I = 1.2 A
GS
D
• High Performance Trench Technology for Extremely Low r
DS(on)
• High Power and Current Handling Capability in a Widely Used
Surface Mount Package
8601 = Specific Device Code
• Fast Switching Speed
M
= Date Code
• 100% UIL Tested
• This Device is Pb−Free, Halide Free and is RoHS Compliant
Applications
PIN ASSIGNMENT
• Primary DC−DC Switch
• Load Switch
D
MOSFET MAXIMUM RATINGS (T = 25°C, unless otherwise noted)
A
Symbol
Parameter
Drain to Source Voltage
Ratings
Unit
V
V
DS
V
GS
100
20
G
S
Gate to Source Voltage
Continuous (Note 1a)
Pulsed
V
I
D
2.7
A
12
E
Single Pulse Avalanche Energy (Note 3)
13
mJ
W
AS
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
P
Power Dissipation
(Note 1a)
(Note 1b)
1.5
D
0.6
T , T
Operating and Storage Junction
Temperature Range
−55 to 150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (T = 25°C, unless otherwise noted)
A
Symbol
Parameter
Ratings
Unit
R
Thermal Resistance, Junction to Case
(Note 1)
75
°C/W
q
JC
R
Thermal Resistance, Junction to Ambient
(Note 1a)
80
°C/W
q
JA
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
December, 2022 − Rev. 3
FDN8601/D
FDN8601
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 250 mA, V = 0 V
100
−
−
−
−
V
DSS
D
GS
Breakdown Voltage Temperature Coefficient
= 250 mA, referenced to 25_C
68
mV/_C
DBVDSS
DTJ
D
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 80 V, V = 0 V
−
−
−
−
1
mA
DSS
GSS
DS
GS
I
=
20 V, V = 0 V
100
nA
GS
DS
ON CHARACTERISTICS (Note 2)
V
Gate to Source Threshold Voltage
V
I
= V , I = 250 mA
2.0
−
3.0
−8
4.0
−
V
GS(th)
GS
DS D
Gate to Source Threshold Voltage
Temperature Coefficient
= 250 mA, referenced to 25_C
mV/_C
DVGS(th)
DTJ
D
r
Static Drain to Source On Resistance
Forward Transconductance
V
GS
V
GS
V
GS
V
DS
= 10 V, I = 1.5 A
−
−
−
−
85.4
117
143
8
109
175
183
−
mW
DS(on)
D
= 6 V, I = 1.2 A
D
= 10 V, I = 1.5 A, T = 125_C
D
J
g
FS
= 10 V, I = 1.5 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 50 V, V = 0 V, f = 1 MHz
−
−
−
−
156
47
210
65
5
pF
pF
pF
W
iss
GS
C
oss
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C
rss
2.7
1.0
R
−
g
SWITCHING CHARACTERISTICS (Note 2)
t
Turn−On Delay Time
Rise Time
V
R
= 50 V, I = 1.5 A, V = 10 V,
−
−
−
−
−
4.3
1.3
7.8
3.4
3
10
10
16
10
5
ns
ns
ns
ns
nC
d(on)
DD
D
GS
= 6 W
GEN
t
r
t
Turn−Off Delay Time
Fall Time
d(off)
t
f
Q
g
Total Gate Charge
V
GS
V
DD
= 0 V to 10 V
= 50 V, I = 1.5 A
D
Q
g
Total Gate Charge
V
GS
V
DD
= 0 V to 5 V
−
1.8
3
nC
= 50 V, I = 1.5 A
D
Q
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
DD
= 50 V, I = 1.5 A
−
−
0.9
0.8
−
−
nC
nC
gs
D
Q
gd
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
V
Source to Drain Diode Forward Voltage
Reverse Recovery Time
V
= 0 V, I = 1.5 A (Note 2)
−
−
−
0.81
29
1.3
46
27
V
SD
GS
S
t
I = 1.5 A, di/dt = 100 A/ms
F
ns
nC
rr
Q
Reverse Recovery Charge
15
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. R
is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
q
JA
mounting surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
q
q
CA
JC
a. 80°C/W when mounted on a
b. 180°C/W when mounted on a
minimum pad.
2
1 in pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
3. Starting T = 25_C; N−ch: L = 3 mH, I = 3 A, V = 100 V, V = 10 V.
J
AS
DD
GS
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2
FDN8601
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
5
12
9
V
= 10 V
= 8 V
= 7 V
GS
V
= 5 V
GS
V
GS
4
3
2
1
0
V
GS
V
= 6 V
GS
V
V
= 6 V
= 5 V
GS
6
V
GS
= 7 V
GS
3
V
GS
= 10 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
= 8 V
GS
0
0
3
6
9
12
0
1
2
3
4
5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs.
Drain Current and Gate Voltage
2.0
1.8
500
I
V
= 1.5 A
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
D
= 10 V
GS
400
I
D
= 1.5 A
1.6
1.4
1.2
1.0
300
200
100
0
T = 125°C
J
0.8
0.6
T = 25°C
J
−75 −50 −25
0
25 50 75 100 125 150
4
5
6
7
8
9
10
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On−Resistance vs.
Junction Temperature
Figure 4. On−Resistance vs. Gate to Source
Voltage
20
10
12
PULSE DURATION = 80 ms
V
GS
= 0 V
DUTY CYCLE = 0.5% MAX
V
DS
= 5 V
T = 150°C
J
9
6
3
0
1
T = 25°C
J
0.1
T = 25°C
J
T = 150°C
J
0.01
0.001
T = −55°C
J
T = −55°C
J
2
3
4
5
6
7
8
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs. Source Current
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3
FDN8601
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted) (continued)
J
10
8
300
100
I
D
= 1.5 A
V
DD
= 25 V
C
iss
V
DD
= 50 V
6
C
oss
V
DD
= 75 V
4
10
1
C
rss
2
f = 1 MHz
= 0 V
V
GS
0
0
1
2
3
4
0.1
1
10
100
Q , GATE CHARGE (nC)
g
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain to Source Voltage
7
6
5
20
10
100 ms
1
1 ms
T = 25°C
J
10 ms
4
THIS AREA IS
0.1
T = 100°C
LIMITED BY r
J
DS(on)
100 ms
3
SINGLE PULSE
T = MAX RATED
J
1 s
10 s
DC
T = 125°C
J
0.01
2
1
R
q
JA
= 180°C/W
T = 25°C
A
0.001
0.01
0.1
, TIME IN AVALANCHE (ms)
1
2
0.1
1
10
100
400
t
AV
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Forward Bias Safe Operating Area
300
100
SINGLE PULSE
R
q
JA
= 180°C/W
T = 25°C
A
10
1
0.5
10−4
10−3
10−2
10−1
t, PULSE WIDTH (s)
1
10
100
1000
Figure 11. Single Pulse Maximum Power Dissipation
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4
FDN8601
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted) (continued)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.01
PDM
t1
t2
SINGLE PULSE
NOTES:
DUTY FACTOR, D = t / t
R
= 180°C/W
q
JA
1
2
PEAK T = P
x Z
x R
+ T
JA A
q
q
J
DM
JA
0.001
10−4
10−3
10−2
10−1
1
10
100
1000
t, RECTANGULAR PULSE DURATION (s)
Figure 12. Junction−to−Ambient Transient Thermal Response Curve
PACKAGE MARKING AND ORDERING INFORMATION
†
Device
FDN8601
Device Marking
Package
Reel Size
Tape Width
8 mm
Shipping
8601
SOT−23/SUPERSOT−23, 3 LEAD, 1.4x2.9
(Pb−Free, Halide Free)
7”
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SUPERSOT is trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.
www.onsemi.com
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23/SUPERSOTt−23, 3 LEAD, 1.4x2.9
CASE 527AG
ISSUE A
DATE 09 DEC 2019
GENERIC
MARKING DIAGRAM*
*This information is generic. Please refer to
XXX = Specific Device Code
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
M
= Month Code
XXXMG
G
= Pb−Free Package
G
(Note: Microdot may be in either location)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON34319E
SOT−23/SUPERSOT−23, 3 LEAD, 1.4X2.9
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
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