FDN86246 [ONSEMI]
N 沟道，Power Trench® MOSFET，150V，1.6A，261mΩ;
| 型号： | FDN86246 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，Power Trench® MOSFET，150V，1.6A，261mΩ 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：296K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – N-Channel,
POWERTRENCH)
150 V, 1.6 A, 261 mW
SOT−23/SUPERSOTt −23, 3 LEAD,
1.4x2.9
CASE 527AG
FDN86246
D
General Description
This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been optimized for r
),
DS(on
switching performance and ruggedness.
Features
G
S
• Max r
• Max r
= 261 mW at V = 10 V, I = 1.6 A
GS D
DS(on)
DS(on)
= 359 mW at V = 6 V, I = 1.4 A
GS
D
• High Performance Trench Technology for Extremely Low r
DS(on)
MARKING DIAGRAM
• High Power and Current Handling Capability in a Widely Used
Surface Mount Package
246MG
• Fast Switching Speed
G
• 100% UIL Tested
• Pb−Free, Halide Free and RoHS Compliant
246 = Specific Device Code
M
G
= Month Code
= Pb−Free Package
Application
• PD Switch
(Note: Microdot may be in either location)
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted.)
A
ORDERING INFORMATION
Symbol
Parameter
Drain−Source Voltage
Value
150
20
Unit
V
V
DS
†
Device
Package
Shipping
V
GS
Gate−Source Voltage
V
FDN86246
SOT−23
(Pb−Free/
Halide Free)
3000 /
Tape & Reel
I
D
Drain Current
– Continuous (Note 1a)
– Pulsed
A
1.6
6
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
E
Single Pulse Avalanche Energy
(Note 3)
13
mJ
W
AS
P
Maximum Power Dissipation
(Note 1a)
(Note 1b)
D
1.5
0.6
T , T
Operating and Storage Junction
Temperature Range
–55 to +150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
A
Symbol
Parameter
Value
Unit
R
Thermal Resistance,
Junction to Case (Note 1)
75
°C/W
q
JC
R
Thermal Resistance,
Junction to Ambient (Note 1a)
80
°C/W
q
JA
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
January, 2023 − Rev. 3
FDN86246/D
FDN86246
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain–Source Breakdown Voltage
I
I
= 250 mA, V = 0 V
150
−
−
−
V
DSS
D
GS
DBV
/
Breakdown Voltage Temperature
Coefficient
= 250 mA, referenced to 25°C
−
106
mV/°C
DSS
D
DT
J
DSS
GSS
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 120 V, V = 0 V
−
−
−
−
1
mA
DS
GS
I
=
20 V, V = 0 V
100
nA
GS
DS
ON CHARACTERISTICS (Note 2)
V
Gate to Source Threshold Voltage
V
I
= V , I = 250 mA
2
3.4
4
V
GS(th)
GS
DS D
DV
/
Gate to Source Threshold Voltage
Temperature Coefficient
= 250 mA, referenced to 25°C
−
−9
−
mV/°C
GS(th)
J
D
DT
r
Static Drain to Source
On–Resistance
V
GS
V
GS
V
GS
= 10 V, I = 1.6 A
−
−
−
195
242
359
261
359
481
mW
DS(on)
D
= 6 V, I = 1.4 A
D
= 10 V, I = 1.6 A. T = 125°C
D
J
g
FS
Forward Transconductance
V
DS
= 10 V, I = 1.6 A
−
4
−
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 75 V, V = 0 V, f = 1 MHz
−
−
−
−
168
21
225
30
5
pF
pF
pF
W
iss
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
1.6
0.9
rss
R
−
g
SWITCHING CHARACTERISTICS
t
Turn–On Delay Time
Rise Time
V
V
= 75 V, I = 1.6 A,
−
−
−
−
−
−
−
−
4.5
1.1
8
10
10
16
10
5
ns
ns
d(on)
DD
GS
D
= 10 V, R
= 6 W
GEN
t
r
t
Turn–Off Delay Time
Fall Time
ns
d(off)
t
f
2.9
2.9
1.6
0.9
0.8
ns
Q
Q
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
GS
V
GS
V
DD
= 0 V to 10 V, V = 75 V, I = 1.6 A
nC
nC
nC
nC
g
g
DD
D
= 0 V to 5 V, V = 75 V, I = 1.6 A
3
DD
D
Q
= 75 V, I = 1.6 A
−
gs
gd
D
Q
−
DRAIN–SOURCE DIODE CHARACTERISTICS
V
SD
Drain to Source Diode Forward
Voltage
V
GS
= 0 V, I = 1.6 A (Note 2)
−
0.83
1.3
V
S
t
Reverse Recovery Time
I = 1.6 A, di/dt = 100 A/ms
F
−
−
44
29
70
47
ns
rr
Q
Reverse Recovery Charge
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
1. R
is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
q
JA
mounting surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
q
q
CA
JC
a) 80°C/W when mounted
b) 180°C/W when mounted
on a minimum pad.
2
on a 1 in pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
3. Starting T = 25°C; N−ch: L = 3 mH, I = 3 A, V = 150 V, V = 10 V.
J
AS
DD
GS
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2
FDN86246
TYPICAL CHARACTERISTICS
(T = 25°C, unless otherwise noted)
J
6
5
4
5
V
GS
V
GS
= 10 V
= 7 V
V
= 5 V
GS
V
= 6 V
GS
4
3
2
1
0
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% Max
V
= 5.5 V
GS
3
2
1
V
GS
= 6 V
V
= 5.5 V
GS
V
= 7 V
GS
V
GS
= 10 V
V
= 5 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% Max
GS
0
0
1
2
3
4
5
0
1
2
3
4
5
6
V
DS
, Drain to Source Voltage (V)
I , Drain Current (A)
D
Figure 2. Normalized On−Resistance vs. Drain
Figure 1. On−Region Characteristics
Current and Gate Voltage
2.2
2.0
1.8
800
I
V
= 1.6 A
D
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% Max
I
D
=1.6 A
= 10 V
GS
600
400
1.6
1.4
1.2
1.0
0.8
0.6
0.4
T = 125°C
J
200
0
T = 25°C
J
−75 −50 −25
0
25
50
75 100 125 150
4
5
6
7
8
9
10
T , Junction Temperature (5C)
J
V
GS
, Gate to Source Voltage (V)
Figure 4. On−Resistance vs. Gate to Source
Figure 3. Normalized On−Resistance
Voltage
vs. Junction Temperature
6
5
4
10
1
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% Max
V
GS
= 0 V
V
DS
= 5 V
T = 150°C
J
T = 25°C
J
3
2
1
0.1
T =−55°C
J
T = 150°C
J
T = 25°C
J
0.01
T = −55°C
J
0.001
0
6
1.2
2
3
4
5
7
0.2
0.4
0.6
0.8
1.0
V
GS
, Gate to Source Voltage (V)
V
SD
, Body Diode Forward Voltage (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs. Source Current
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3
FDN86246
TYPICAL CHARACTERISTICS (CONTINUED)
(T = 25°C, unless otherwise noted)
J
10
8
300
V
DD
= 50 V
I
D
= 1.6 A
C
iss
100
V
DD
= 75 V
6
V
DD
= 100 V
C
oss
10
4
2
0
f = 1 MHz
V
GS
= 0 V
C
rss
1
0.1
1
10
, Drain to Source Voltage (V)
DS
100
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Q , Gate Charge (nC)
g
V
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain to Source
Voltage
10
1
3.5
3.0
2.5
100 ms
1 ms
T = 25°C
J
THIS AREA IS
LIMITED BY r
0.1
10 ms
DS(on)
2.0
1.5
1.0
100 ms
T = 100°C
J
SINGLE PULSE
T = MAX RATED
1 s
10 s
DC
T = 125°C
J
0.01
J
R
= 180°C/W
q
JA
T = 25°C
A
0.001
0.1
0.01
0.1
, Time in Avalanche (ms)
1
10
1
, Drain to Source Voltage (V)
DS
100
500
t
V
AV
Figure 10. Forward Bias Safe Operating Area
Figure 9. Unclamped Inductive Switching
Capability
200
100
SINGLE PULSE
R
= 180°C/W
q
JA
T = 25°C
A
10
1
0.5
0.0001
0.001
0.01
0.1
t, Pulse Width (s)
1
10
100
1000
Figure 11. Single Pulse Maximum Power Dissipation
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4
FDN86246
TYPICAL CHARACTERISTICS (CONTINUED)
(T = 25°C, unless otherwise noted)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.1
P
DM
0.05
0.02
0.01
t
1
t
2
0.01
Notes:
DUTY FACTOR: D = t /t
1
2
SINGLE PULSE
PEAK T = P
× Z
× R
+ T
JA A
q
q
J
DM
JA
R
= 180°C/W
q
JA
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, Rectangular Pulse Duration (s)
Figure 12. Junction−to−Ambient Transient Thermal Response Curve
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
SUPERSOT is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23/SUPERSOTt−23, 3 LEAD, 1.4x2.9
CASE 527AG
ISSUE A
DATE 09 DEC 2019
GENERIC
MARKING DIAGRAM*
*This information is generic. Please refer to
XXX = Specific Device Code
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
M
= Month Code
XXXMG
G
= Pb−Free Package
G
(Note: Microdot may be in either location)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON34319E
SOT−23/SUPERSOT−23, 3 LEAD, 1.4X2.9
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
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vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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