FDP054N10 [ONSEMI]

N 沟道,PowerTrench® MOSFET,100V,144A,5.5mΩ;
FDP054N10
型号: FDP054N10
厂家: ONSEMI    ONSEMI
描述:

N 沟道,PowerTrench® MOSFET,100V,144A,5.5mΩ

局域网 开关 脉冲 晶体管
文件: 总10页 (文件大小:567K)
中文:  中文翻译
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2013 12 月  
FDP054N10  
N 沟道 PowerTrench MOSFET  
100 V144 A5.5 m  
®
特性  
说明  
N 沟道 MOSFET 采用飞兆半导体先进的 PowerTrench® 工艺  
生产,这一先进工艺是专为最大限度地降低通态电阻并保持卓越  
开关性能而定制的。  
RDS(on) = 4.6 m(Typ.)@VGS = 10 V, ID = 75 A  
快速开关速度  
低栅极电荷  
应用  
高性能沟道技术可实现极低的 RDS(on)  
高功率和高电流处理能力  
符合 RoHS 标准  
用于 ATX/Server/Telecom PSU 的同步整流  
电池保护电路  
电机驱动和不间断电源  
微型太阳能逆变器  
D
G
G
D
S
TO-220  
S
MOSFET 最大额定值 TC = 25oC 除非另有说明。  
FDP054N10  
100  
符号  
VDSS  
VGSS  
参数  
单位  
V
漏极-源极电压  
栅极-源极电压  
±20  
V
A
-连续 (TC = 25oC,硅限制)  
-连续 (TC = 100oC,硅限制)  
-连续 (TC = 25oC,封装限制)  
-脉冲  
144  
ID  
102  
120  
漏极电流  
IDM  
576  
A
mJ  
漏极电流  
(注 1)  
(注 2)  
(注 3)  
EAS  
dv/dt  
1153  
6
单脉冲雪崩能量  
峰值二极管雪崩能量  
V/ns  
W
W/oC  
oC  
(TC = 25oC)  
-超过 25oC 时降额  
263  
PD  
功耗  
1.75  
TJ, TSTG  
TL  
-55 +175  
300  
工作和存储温度范围  
oC  
用于焊接的最大引脚温度,距离外壳 1/8”,持续 5 秒  
热性能  
FDP054N10  
符号  
RθJC  
参数  
单位  
0.57  
结至外壳热阻最大值  
oC/W  
62.5  
结至环境热阻最大值  
RθJA  
www.fairchildsemi.com  
©2009 飞兆半导体公司  
1
FDP054N10 Rev. C3  
封装标识与定购信息  
器件编号  
顶标  
封装  
包装方法  
塑料管  
卷尺寸  
不适用  
带宽  
数量  
FDP054N10  
FDP054N10  
TO-220  
不适用  
50 单元  
电气特性 TC = 25oC 除非另有说明。  
符号  
参数  
测试条件  
最小值 典型值 最大值  
单位  
关断特性  
BVDSS  
ID = 250 μA, VGS = 0 V, TC = 25oC  
ID = 250 μA,参考 25oC  
100  
-
-
-
-
V
漏极-源极击穿电压  
BVDSS  
/ TJ  
0.01  
V/oC  
击穿电压温度系数  
VDS = 100 V, VGS = 0 V  
VDS = 100 V, VGS = 0 V, TC = 150oC  
-
-
-
-
-
-
1
IDSS  
IGSS  
A  
零栅极电压漏极电流  
栅极-体漏电流  
500  
±100  
VGS = ±20 V, VDS = 0 V  
nA  
导通特性  
VGS(th)  
RDS(on)  
gFS  
VGS = VDS, ID = 250 A  
VGS = 10 V, ID = 75 A  
VGS = 10 V, ID = 75 A  
2.5  
3.5  
4.6  
192  
4.5  
5.5  
-
V
m  
S
栅极阈值电压  
-
-
漏极至源极静态导通电阻  
正向跨导  
动态特性  
Ciss  
-
-
-
-
-
-
9985  
935  
390  
156  
53  
13280  
1245  
585  
203  
-
pF  
pF  
pF  
nC  
nC  
nC  
输入电容  
VDS = 25 V, VGS = 0 V,  
f = 1 MHz  
Coss  
输出电容  
Crss  
反向传输电容  
Qg(tot)  
Qgs  
10V 的栅极电荷总量  
栅极-源极栅极电荷  
栅极-漏极 密勒 电荷  
V
V
DS = 80 V, ID = 75 A,  
GS = 10 V  
(说明 4)  
Qgd  
48  
-
开关特性  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
44  
92  
80  
39  
98  
194  
170  
88  
ns  
ns  
ns  
ns  
导通延迟时间  
开通上升时间  
关断延迟时间  
关断下降时间  
V
V
DD = 50 V, ID = 75 A,  
GS = 10 V, RG = 4.7   
(说明 4)  
漏极源极二极管特性  
IS  
-
-
-
-
-
-
-
144  
576  
1.3  
-
A
A
漏极-源极二极管最大正向连续电流  
漏极-源极二极管最大正向脉冲电流  
漏极-源极二极管正向电压  
反向恢复时间  
ISM  
VSD  
trr  
VGS = 0 V, ISD = 75 A  
-
V
57  
121  
ns  
nC  
VGS = 0 V, ISD = 75 A,  
dIF/dt = 100 A/s  
Qrr  
-
反向恢复电荷  
注意:  
1: 重复额定值:脉冲宽度受限于最大结温。  
2: L = 0.41 mHI = 75 AV = 50 VR = 25 ,启动 T = 25°C。  
AS  
DD  
G
J
3:  
I
75 Adi/dt 200 A/msV BV  
,启动 T = 25°C。  
SD  
DD  
DSS  
J
4: 本质上独立于工作温度的典型特性。  
www.fairchildsemi.com  
©2009 飞兆半导体公司  
2
FDP054N10 Rev. C3  
典型性能特征  
1. 导通区域特性  
2. 传输特性  
1000  
1000  
VGS = 15.0 V  
10.0 V  
8.0 V  
* Notes :  
1. VDS = 20V  
2. 250s Pulse Test  
7.0 V  
6.5 V  
6.0 V  
100  
10  
1
150oC  
100  
25oC  
*Notes:  
1. 250s Pulse Test  
2. TC = 25oC  
-55oC  
10  
0.1  
6
3
4
5
6
7
1
VDS, Drain-Source Voltage[V]  
VGS, Gate-Source Voltage[V]  
3. 导通电阻变化与漏极电流和栅极电压  
4. 体二极管正向电压变化与源电流和温度  
7
1000  
6
150oC  
100  
VGS = 10V  
5
25oC  
10  
VGS = 20V  
4
Notes:  
1. VGS = 0V  
* Note : TC = 25oC  
2. 250s Pulse Test  
3
1
0.2  
0
100  
200  
300  
400  
0.4  
0.6  
0.8  
1.0  
1.2  
ID, Drain Current [A]  
VSD, Body Diode Forward Voltage [V]  
5. 电容特性  
6. 栅极电荷  
10  
100000  
C
C
C
= C + C (C = shorted)  
gs gd ds  
iss  
VDS = 20V  
VDS = 50V  
VDS = 80V  
= C + C  
ds gd  
oss  
rss  
= C  
gd  
8
6
4
2
0
Ciss  
10000  
1000  
100  
Coss  
Crss  
* Note:  
1. VGS = 0V  
* Note : ID = 75A  
2. f = 1MHz  
0
30  
60  
90  
120  
150  
180  
0.1  
1
10  
30  
Qg, Total Gate Charge [nC]  
VDS, Drain-Source Voltage [V]  
www.fairchildsemi.com  
©2009 飞兆半导体公司  
3
FDP054N10 Rev. C3  
典型性能特征 (接上页)  
7. 击穿电压变化与温度  
8. 导通电阻变化与温度  
2.4  
1.2  
2.0  
1.6  
1.2  
0.8  
0.4  
1.1  
1.0  
0.9  
0.8  
* Notes :  
1. VGS = 0V  
* Notes :  
1. VGS = 10V  
2. ID = 10mA  
2. ID = 75A  
-80  
-40  
0
40  
80  
120 160 200  
-80  
-40  
0
40  
80  
120 160 200  
o
o
TJ, Junction Temperature [ C]  
TJ, Junction Temperature [ C]  
9. 最大安全工作区  
10. 最大漏极电流与壳体温度  
150  
1000  
100  
100  
100 s  
Limitted by package  
10  
THIS AREA IS  
LIMITED BY r  
DC  
DS(on)  
50  
SINGLE PULSE  
1
1 ms  
TJ = MAX RATED  
RJc = 0.57 oC/W  
TC = 25 oC  
10 ms  
100 ms  
0
25  
0.1  
0.1  
50  
75  
100  
125  
150  
175  
1
10  
100  
400  
o
VDS, DRAIN to SOURCE VOLTAGE (V)  
TC, Case Temperature [ C]  
11. 瞬态热响应曲线  
1
0.5  
0.2  
0.1  
0.1  
PDM  
0.05  
t1  
t2  
0.02  
0.01  
0.01  
* Notes :  
1. ZJC(t) = 0.57oC/W Max.  
Single pulse  
2. Duty Factor, D=t1/t2  
3. TJM - TC = PDM * ZJC(t)  
0.001  
10-5  
10-4  
10-3  
10-2  
10-1  
1
10  
t
1形脉冲持续时间 [ ]  
www.fairchildsemi.com  
©2009 飞兆半导体公司  
4
FDP054N10 Rev. C3  
I
= 常量  
G
12. 栅极电荷测试电路与波形  
RL  
VDS  
90%  
VDS  
VDD  
VGS  
RG  
10%  
VGS  
DUT  
V
GS  
td(on)  
tr  
td(off)  
tf  
t on  
t off  
13. 阻性开关测试电路与波形  
VGS  
14. 非箝位感性开关测试电路与波形  
www.fairchildsemi.com  
©2009 飞兆半导体公司  
5
FDP054N10 Rev. C3  
+
DUT  
VDS  
_
I SD  
L
Driver  
RG  
Same Type  
as DUT  
VDD  
VGS  
• dv/dt controlled by RG  
• ISD controlled by pulse period  
Gate Pulse Width  
--------------------------  
VGS  
D =  
Gate Pulse Period  
10V  
( Driver )  
IFM , Body Diode Forward Current  
I SD  
di/dt  
( DUT )  
IRM  
Body Diode Reverse Current  
Body Diode Recovery dv/dt  
VSD  
VDS  
( DUT )  
VDD  
Body Diode  
Forward Voltage Drop  
15. 二极管恢复 dv/dt 峰值测试电路与波形  
www.fairchildsemi.com  
©2009 飞兆半导体公司  
6
FDP054N10 Rev. C3  
机械尺寸  
16. TO220,模塑, 3 引脚,非 Jedec Variation AB  
封装图纸作为一项服务,提供给考虑飞兆半导体元件的客户。具体参数可能会有变化,且不会做出相应通知。请注意图纸上的版本和 /  
或日期,并联系飞兆半导体代表核实或获得最新版本。封装规格并不超出飞兆公司全球范围内的条款与条件,尤其指保修,保修涵盖飞  
兆半导体的全部产品。  
随时访问飞兆半导体在线封装网页,可以获取最新的封装图纸:  
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO220-0R3  
www.fairchildsemi.com  
©2009 飞兆半导体公司  
7
FDP054N10 Rev. C3  
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Rev. I66  
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©2009 飞兆半导体公司  
FDP054N10 Rev. C3  
8
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