FDP075N15A-F102 [ONSEMI]
N 沟道，PowerTrench® MOSFET，150V，130A，7.5mΩ;
| 型号： | FDP075N15A-F102 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，150V，130A，7.5mΩ 局域网 开关 脉冲 晶体管 |
| 文件： | 总12页 (文件大小：705K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.cn
MOSFET – N ṿᬣ,
POWERTRENCH)
V
R
MAX
I MAX
D
DSS
DS(ON)
150 V
7.5 mW @ 10 V
130 A
*ꢀꢁꢂꢀꢃꢄꢁ 120 A。
150 V, 130 A, 7.5 mW
FDP075N15A, FDB075N15A
TO−220
CASE 221A−09
ᛄꢀ
ꢀ N ꢁꢀ MOSFET ꢁꢂ onsemi ꢂꢃ POWERTRENCH
ꢃꢄꢅꢄ，ꢆꢅꢂꢃꢃꢄꢆꢇꢈꢉꢊꢇꢋꢌꢈꢍꢎꢉꢊꢋꢏꢐ
ꢑꢒꢌꢓꢔꢕꢍꢎꢖꢗꢏ。
G
D
S
ꢁ
D
•ꢘR
= 6.25 mW (ꢙꢚꢛ) @ V = 10 V, I = 100 A
GS D
•ꢘꢜꢐꢓꢔ
DS(on)
2
D PAK−3 (TO−263, 3−LEAD)
CASE 418AJ
G
•ꢘꢍꢝꢞꢊꢑ
S
•ꢘꢒꢕꢍꢁꢀꢟꢠꢡꢢꢓꢞꢍꢏ R
•ꢘꢒꢣꢔꢤꢒꢊꢥꢦꢕꢍꢧ
•ꢘꢖꢨ RoHS ꢩꢪ
DS(on)
MARKING DIAGRAM
ꢂ✈
•ꢘꢂꢫ ATX / ꢬꢭꢮ / ꢊꢯ PSU ꢏꢰꢱꢲꢥ
•ꢘꢊꢳꢐꢴꢊꢗ
•ꢘꢊꢵꢘꢶꢤꢷꢙꢸꢊꢹ
•ꢘꢺꢚꢻꢚꢍꢛꢼꢮ
$Y&Z&3&K
FDB
075N15A
$Y&Z&3&K
FDP
075N15A
$Y
= onsemi logo
FDP075N15A = Device Code
FDB075N15A
&Z
&3
&K
= Assembly Plant Code
= 3−Digit Date Code Format
= 2−Digits Lot Run Traceability Code
D
G
S
N−Channel
ORDERING INFORMATION
See detailed ordering and shipping information on page 9 of
this data sheet.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
September, 2021 − Rev. 3
FDP075N15ACN/D
FDP075N15A, FDB075N15A
MOSFET ᣠꢃ⍭ꢄꢅ(T = 25°C ꢅꢆ
׆
ꢇꢈꢉ。) C
FDP075N15A−F102
FDB075N15A
ꢆ ꢇꢈ
ꢉꢊ
V
V
DSS
ꢊꢋ－⁰ꢋꢃի
᧥ꢋ－⁰ꢋꢃի
ꢊꢋꢃꢄ
150
20
V
GSS
V
I
D
130*
92
A
- ঽ (T = 25°C)
C
- ঽ (T = 100°C)
C
I
ꢊꢋꢃꢄ
- Β (ꢈꢉ 1)
522
A
mJ
DM
E
ԵΒ↺༉்Ჟ (ꢈꢉ 2)
lꢋ
ٱ
ቂ૭ dv/dt ໐Ȝ (ꢈꢉ 3) ѿ૧
588
AS
dv/dt
6.0
V/ns
W
P
333
(T = 25°C)
C
D
- ℝĮೃ 25°C Å⛺
2.22
-55 ೃ +175
300
W/°C
°C
T , T
࿅
ļ٬സʈ
ꢌႆීࣔ
J
STG
T
L
✈n⋪ᖅŔᣠଇჵএꢌႆ，ҋ 1/8”，ᓡঽ 5 Ң
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
(֢ᚡᝧ)
ୢꢃիᡕ᪗ᣠଇ⍭ൺȜጸꢂϷϚŔȜී
ࣔ
，ࡈ
Ö
்úᔿय。ୢᡕ᪗Ûĵ᪩{ꢂȜ，෦ៀẵƽᚑࡈ
Öѿ்，
்úොೄࡈ
Öᔿय，ᅑڭ
∰ሇ。 *ꢀꢁꢂꢀꢃꢄꢁ 120 A。
1. Ო૭⍭ൺȜ：Βꢍႆַꢂnᣠଇꢎꢌ。
2. ꢏ T = 25°C， L = 3 mH， I = 19.8 A。
J
AS
DD
3. I ≤ 100 A, di/dt ≤ 200 A/ms, V ≤ BV
, ꢏ T = 25°C.
SD
DSS
J
⋍ꢁ்
FDP075N15A−F102
FDB075N15A
ꢆ ꢇꢈ
ꢉꢊ
0.45
62.5
40
°C/W
R
ꢎೃꢐꢑᣠଇȜ
q
JC
R
ꢎೃꢒꢐꢑ (ᣠꢓꢔꢕŔ 2 ꢖ
ט
⋪ꢗ) ᣠଇȜ。 q
JA
2
ꢎೃꢒꢐꢑ D2-PAK (1 in 2 ꢖ
ט
⋪ꢗ) ᣠଇȜ。 www.onsemi.cn
2
FDP075N15A, FDB075N15A
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
ꢆ ꢇꢈ
Ἣᚥꢋ
ᣠꢌꢅ ꢍꢎꢅ ᣠꢃꢅ
ꢉꢊ
ꢏꢐꢁ
BV
ꢊꢋ－⁰ꢋϛꢘꢃի
I
I
= 250 mA, V = 0 V
150
−
−
−
V
DSS
D
GS
DBV
DT
/
ϛꢘꢃիꢌႆꢙꢚ
= 250 mA, ꢌႆ֢ 25°C
−
0.1
V/°C
DSS
D
J
I
ꢛ᧥ꢋꢃիꢊꢋꢃꢄ
V
DS
V
DS
V
GS
= 120 V, V = 0 V
−
−
−
−
−
−
1
mA
DSS
GS
= 120 V, T = 150°C
500
100
C
I
᧥ꢋ-ijꢊꢃꢄ
=
20 V, V = 0 V
nA
GSS
DS
ꢑꢁ
V
᧥ꢋꢜȜꢃի
V
GS
V
GS
V
DS
= V , I = 250 mA
2.0
−
−
4.0
7.5
−
V
mW
S
GS(th)
DS
D
R
ꢊꢋೃ⁰ꢋꢝꢞොꢟꢃꢑ
ꢠ
ױ
ꢡො = 10 V, I = 100 A
6.25
164
DS(on)
D
g
FS
= 10 V, I = 100 A
−
D
ꢒꢓꢁ
C
ꢢͅꢃꢣ
V
= 75 V, V = 0 V, f = 1 MHz
−
−
−
−
−
−
−
−
−
5525
516
21
7350
685
−
pF
pF
pF
pF
nC
nC
nC
nC
W
iss
DS
GS
C
ꢢϚꢃꢣ
oss
C
֭
ױ
Āꢢꢃꢣ rss
C
்Ჟꢤ͓ꢢϚꢃꢣ
10 V Ŕ᧥ꢋꢃꢥꢦᲟ
᧥ꢋ - ⁰ꢋ᧥ꢋꢃꢥ
᧥ꢋꢧ
א
ꢃꢥꢜȜ ᧥ꢋ - ꢊꢋ “ꢨҲ” ꢃꢥ
ꢩꢪꢃꢫꢃꢑ (G-S)
V
V
= 75 V, V = 0 V
909
77
−
oss(er)
DS
GS
Q
= 75 V, I = 100 A, V = 10 V
100
−
g(tot)
DS
D
GS
(ꢈꢉ 4)
Q
26
gs
Q
11
−
gs2
Q
16
−
gd
ESR
f = 1 MHz
2.29
−
ꢔꢏꢁ
t
ොꢟꢬꢭꢮꢯ
ꢏꢟ⛺ԧꢮꢯ
͓ꢰꢬꢭꢮꢯ
͓ꢰ⛻ℝꢮꢯ
V
= 75 V, I = 100 A, V = 10 V,
−
−
−
−
28
37
62
21
66
84
ns
ns
ns
ns
d(on)
DD
G
D
GS
R
= 4.7 W
t
r
(ꢈꢉ 4)
t
134
52
d(off)
t
f
⃯ᥡ -⁰ᥡꢕᥡ
ٱ
ꢁ I
ꢊꢋ - ⁰ꢋlꢋ
ٱ
ᣠଇꢠױ
ঽꢃꢄ ꢊꢋ - ⁰ꢋlꢋ
ٱ
ᣠଇꢠױ
Βꢃꢄ ꢊꢋ - ⁰ꢋlꢋ
ٱ
ꢠױ
ꢃի ֭
ױ
ቂ૭ꢮꢯ −
−
−
−
−
−
−
130*
520
1.25
−
A
A
S
I
SM
V
SD
V
V
= 0 V, I = 100 A
−
V
GS
SD
t
= 0 V, V = 75 V, I = 100 A,
97
264
ns
nC
rr
GS
F
DD
SD
dI /dt = 100 A/ms
Q
֭
ױ
ቂ૭ꢃꢥ −
rr
4. ꢱꢲ⛺ꢳꢴn࿅ļꢌႆŔ͘५ꢵሇ。
www.onsemi.cn
3
FDP075N15A, FDB075N15A
ꢍꢎꢁ்ꢖ
400
100
400
V
GS
=15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
*Notes:
1. V = 10 V
DS
2. 250 ms Pulse Test
100
10
1
175°C
25°C
−55°C
*Notes:
1. 250 ms Pulse Test
10
7
2. T = 25°C
C
0.1
1
3
2
3
4
5
6
V
DS
, Drain−Source Voltage (V)
V
GS
, Gate−Source Voltage (V)
ࣞ
1. ꢑꢗꢘꢁ ࣞ
2. ꢙᩣꢁ 10
8
400
100
175°C
V
GS
= 10 V
25°C
10
1
V
GS
= 20 V
6
*Notes:
1. V = 0 V
GS
2. 250 ms Pulse Test
*Note: T = 25°C
C
4
0
100
200
300
400
0.0
0.5
1.0
1.5
I , Drain Current (A)
D
V
, Body Diode Forward Voltage (V)
SD
ࣞ
3. ꢑꢀℋꢚꢛꢜ⃯ᥡꢀἡꢝ᧥ᥡꢀի ࣞ
4. ijꢕᥡٱ
ᵃױ
ꢀիꢚꢛꢜ⁰ᥡꢀἡꢝꢁႆ 10000
10
V
DS
V
DS
V
DS
= 30 V
= 75 V
= 120 V
C
iss
8
6
4
2
0
1000
100
10
C
oss
*Notes:
1. V = 0 V
GS
2. f = 1 MHz
C
C
C
= C + C (C = shorted)
gs gd ds
= C + C
= C
C
iss
rss
oss
rss
ds
gd
*Note: I = 100 A
gd
D
0.1
1
10
100 200
0
30
60
90
V
DS
, Drain−Source Voltage (V)
Q , Total Gate Charge (nC)
g
ࣞ
5. ꢀꢁ ࣞ
6. ᧥ᥡꢀ็ www.onsemi.cn
4
FDP075N15A, FDB075N15A
ꢍꢎꢁ்ꢖ(ᖅ⛺ꢶ)
1.10
1.05
1.00
0.95
0.90
3.0
2.5
2.0
1.5
1.0
*Notes:
1. V = 0 V
*Notes:
1. V = 10 V
0.5
GS
GS
2. I = 250 mA
2. I = 100 A
D
D
0.0
−100 −50
0
50
100
150
200
−100 −50
0
50
100
150
200
T , Junction Temperature (°C)
J
T , Junction Temperature (°C)
J
ࣞ
7. ϛՏꢀիꢚꢛꢜꢁႆ ࣞ
8. ꢑꢀℋꢚꢛꢜꢁႆ 140
120
100
80
1000
100
10
V
GS
= 10 V
100 ms
1 ms
Limited by package
10 ms
100 ms
Operation in This Area
60
is Limited by R
DS(on)
1
40
*Notes:
DC
0.1
0.01
1. T = 25°C
C
20
2. T = 175°C
J
R
= 0.45°C/W
q
JC
3. Single Pulse
0
25
50
75
100
125
150
175
0.1
1
10
100 300
V
DS
, Drain−Source Voltage (V)
T , Case Temperature (°C)
C
ࣞ
9. ᣠꢃ൩͈࿅ļꢗ ࣞ
10. ᣠꢃ⃯ᥡꢀἡꢜꢁႆ 7
6
5
4
3
2
1
0
50
10
If R = 0
t
AV
= (L)(I )/(1.3*Rated BV
−V
)
AS
DSS DD
If R = 0
= (L/R)In[(I *R)/(1.3*Rated BV −V )+1]
DSS DD
t
AV
AS
Starting T = 25°C
J
Starting T = 150°C
J
1
0.01
0
25
50
75
100
125
150
0.1 10
T , Time in Avalanche (ms)
AV
1
100 500
V
DS
, Drain to Source Voltage (V)
ࣞ
11. ᩣϚꢀ(Eoss) ꢜ⃯ᥡ -⁰ᥡꢀ ࣞ
12. ∮٭
ꢊꢀꢞꢔꢏ்ꢟ www.onsemi.cn
5
FDP075N15A, FDB075N15A
ꢍꢎꢁ்ꢖ(ᖅ⛺ꢶ)
1
0.1
PDM
t1
t2
0.01
0.001
*Notes:
1. Z (t) = 0.45°C/W Max.
q
JC
2. Duty Factor, D= t / t
1
2
3. T − T = P
* Z (t)
q
JC
JM
C
DM
10−5
10−4
10−3
10−2
10−1
1
t , ꢸꢹΒᓡঽꢮꢯ (Ң)
1
ࣞ
13. ɼꢓ⋍ꢠꢂꢡএ www.onsemi.cn
6
FDP075N15A, FDB075N15A
I
G
= ꢺᲟ
ࣞ
14. ᧥ᥡꢀ็ἫᚥꢀᢿꢜỂꢢ RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
ࣞ
15. ℋꢁꢔꢏἫᚥꢀᢿꢜỂꢢ V
GS
ࣞ
16. ∮٭
ꢊꢀꢞꢔꢏἫᚥꢀᢿꢜỂꢢ www.onsemi.cn
7
FDP075N15A, FDB075N15A
+
DUT
VDS
_
ISD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by R
G
• I controlled by pulse period
SD
Gate Pulse Width
Gate Pulse Period
VGS
D =
10 V
(Driver)
IFM , Body Diode Forward Current
ISD
di/dt
(DUT)
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
(DUT)
VDD
Body Diode
Forward Voltage Drop
ࣞ
17. ꢕᥡٱ
ꢣꢤdv/dt ꢥꢅἫᚥꢀᢿꢜỂꢢ www.onsemi.cn
8
FDP075N15A, FDB075N15A
ꢦ᎕᧧ᚖꢜꢄꢧꢨ
ꢩꢋ০ꢆ
†
⍆᧧
ꢦ᎕
ꢪ᎕ꢫẵ
ꢻ
ٱ
ꢽ
ꢬꢭꢮ
⛽ꢼ✈
330 mm
ꢯꢰ
ꢈᲟ
50 ꢄ
800 ꢄ
FDP075N15A−F102
FDB075N15A
FDP075N15A
FDB075N15A
TO−220
⛽ꢼ✈
24 mm
2
D −PAK
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
www.onsemi.cn
9
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220
CASE 221A
ISSUE AK
DATE 13 JAN 2022
SCALE 1:1
STYLE 1:
PIN 1. BASE
2. COLLECTOR
STYLE 2:
PIN 1. BASE
2. EMITTER
STYLE 3:
PIN 1. CATHODE
STYLE 4:
PIN 1. MAIN TERMINAL 1
2. ANODE
3. GATE
2. MAIN TERMINAL 2
3. GATE
3. EMITTER
3. COLLECTOR
4. EMITTER
4. COLLECTOR
4. ANODE
4. MAIN TERMINAL 2
STYLE 5:
PIN 1. GATE
STYLE 6:
PIN 1. ANODE
STYLE 7:
STYLE 8:
PIN 1. CATHODE
2. ANODE
PIN 1. CATHODE
2. ANODE
2. DRAIN
3. SOURCE
4. DRAIN
2. CATHODE
3. ANODE
3. CATHODE
4. ANODE
3. EXTERNAL TRIP/DELAY
4. ANODE
4. CATHODE
STYLE 9:
PIN 1. GATE
STYLE 10:
PIN 1. GATE
STYLE 11:
STYLE 12:
PIN 1. DRAIN
2. SOURCE
3. GATE
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
2. COLLECTOR
3. EMITTER
2. SOURCE
3. DRAIN
4. COLLECTOR
4. SOURCE
4. SOURCE
4. NOT CONNECTED
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42148B
TO−220
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK−3 (TO−263, 3−LEAD)
CASE 418AJ
ISSUE F
DATE 11 MAR 2021
SCALE 1:1
XXXXXX = Specific Device Code
A
= Assembly Location
WL
Y
= Wafer Lot
= Year
GENERIC MARKING DIAGRAMS*
WW
W
M
G
AKA
= Work Week
= Week Code (SSG)
= Month Code (SSG)
= Pb−Free Package
= Polarity Indicator
XX
AYWW
XXXXXXXXG
AKA
XXXXXXXXG
AYWW
XXXXXX
XXYMW
XXXXXXXXX
AWLYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
IC
Standard
Rectifier
SSG
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
98AON56370E
D2PAK−3 (TO−263, 3−LEAD)
PAGE 1 OF 1
DESCRIPTION:
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
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