FDP150N10A-F102 [ONSEMI]

N 沟道，PowerTrench® MOSFET，100V，50A，15mΩ;


型号：	FDP150N10A-F102
厂家：	ONSEMI
描述：	N 沟道，PowerTrench® MOSFET，100V，50A，15mΩ
文件：	总9页 (文件大小：1041K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

FDP150N10A

N 沟道PowerTrench MOSFET

说明

100 V、50 A、15 m

此 N 沟道 MOSFET 采用飞兆半导体先进的 PowerTrench^®工艺

生产，这一先进工艺是专为最大限度地降低导通电阻并保持卓越

开关性能而定制的。

特性

•

R_DS(on)= 12.5 m (Typ.)@V_GS= 10 V, I_D= 50 A

• 快速开关速度

应用

• 低栅极电荷，Q_G=16.2 nC （典型值）

• 高性能沟道技术可实现极低的R_DS(on)

• 高功率和高电流处理能力

• 符合RoHS 标准

• 用于ATX/ 服务器/ 电信PSU 的同步整流

• 电机驱动和不间断电源

• 微型光伏逆变器

TO-220

最大绝对额定值 T_C=25°C，除非另有说明。

FDP150N10A0-F102

符号

参数

单位

V_DSS

V_GSS

100

±20

漏极－源极电压

栅极－源极电压

- 连续(T_C=25°C)

- 连续(T_C=100°C)

- 脉冲

I_D

漏极电流

I_DM

200

漏极电流

（说明1）

（说明2）

（说明3）

E_AS

dv/dt

84.6

6.0

单脉冲雪崩能量

二极管恢复dv/dt 峰值

V/ns

(T_C= 25°C)

P_D

功耗

- 降低至25°C 以上

0.61

-55 至+175

300

W/°C

°C

T_J, T_STG

T_L

工作和存储温度范围

°C

用于焊接的最大引线温度，距离外壳1/8"，持续5 秒

热性能

FDP150N10A-F102

符号

R_JC

参数

结至外壳热阻最大值

单位

1.6

°C/W

R_JA

62.5

结至环境热阻最大值

Publication Order Number:

FDP150N10ACN/D

December-2017,Rev 3

封装标识与定购信息

器件编号

顶标

FDP150N10A

封装

包装方法

塑料管

卷尺寸

不适用

带宽

数量

FDP150N10A-F102

TO-220

不适用

50 个

电气特性^T_C=25°C 除非另有说明。

符号

参数

测试条件

最小值典型值最大值

单位

关断特性

BV_DSS

I_D= 250 A, V_GS= 0 V

100

漏极－源极击穿电压

BV_DSS

/ T_J

击穿电压温度系数

I_D=250 A，温度参考25°C

0.08

V/^oC

_DS= 80 V, V_GS= 0 V

V_DS= 80 V, T_C= 150°C

_GS= ±20 V, V_DS= 0 V

I_DSS

I_GSS

A

零栅极电压漏极电流

500

±100

栅极- 体漏电流

导通特性

V_GS(th)

R_DS(on)

g_FS

V_GS= V_DS, I_D= 250 A

2.0

4.0

15.0

m

栅极阈值电压

V_GS= 10 V, I_D= 50 A

12.5

漏极至源极静态导通电阻

正向跨导

_DS= 10 V, I_D= 50 A

动态特性

C_iss

1080

267

1440



输入电容

_DS= 50 V, V_GS= 0 V,

C_oss

C_rss

355

输出电容

f = 1 MHz

反向传输电容

C_oss(er)

Q_g(tot)

Q_gs

V_DS= 50 V, V_GS= 0 V

436

16.2

5.3

能量相关输出电容

10 V 的栅极电荷总量

栅极- 源极栅极电荷

栅极平台电荷阈值

栅极- 漏极“ 米勒” 电荷

等效串联电阻(G-S)

21.0

V_DS= 50 V , V_GS= 10 V,

I_D= 50 A

Q_gs2

Q_gd

2.6

3.7

（说明4）

ESR

f = 1 MHz

1.3

开关特性

t_d(on)

t_r

t_d(off)

t_f

导通延迟时间

开通上升时间

关断延迟时间

关断下降时间

V_DD= 50 V, I_D= 50 A,

_GS= 10 V, R_G= 4.7 

( 说明4)

漏极- 源极二极管特性

I_S

200

1.3

漏极- 源极二极管最大正向连续电流

I_SM

V_SD

t_rr

漏极- 源极二极管最大正向脉冲电流

漏极- 源极二极管正向电压

反向恢复时间

V_GS= 0 V, I_SD= 50 A

_GS= 0 V, V_DD= 50 V, I_SD= 50 A,

dI_F/dt = 100 A/s

Q_rr

反向恢复电荷

注意：

1. 重复额定值：脉冲宽度受限于最大结温。

2. L=2 mH，I =9.2 A，R =25 ，开始T =25°C。

3. I 100 A，di/dt  200 A/s，V  BV

，开始T =25°C。

DSS

4. 本质上独立于工作温度的典型特性。

www.onsemi.com

典型性能特征

图1. 导通区域特性

图2. 传输特性

400

200

V_GS= 15.0V

*Notes:

1. V_DS= 10V

10.0V

8.0V

6.5V

6.0V

5.5V

5.0V

100

2. 250s Pulse Test

100

175^oC

25^oC

-55^oC

*Notes:

1. 250s Pulse Test

2. T_C= 25^oC

0.1

V_DS, Drain-Source Voltage[V]

V_GS, Gate-Source Voltage[V]

图3. 导通电阻变化与漏极电流和栅极电压的关系

图4. 体二极管正向电压变化与源极电流和温度的关系

400

100

175^oC

25^oC

V_GS= 10V

V_GS= 20V

*Notes:

1. V_GS= 0V

*Note: T_C= 25^oC

150 200

2. 250s Pulse Test

0.0

100

0.5

1.0

1.5

V_SD, Body Diode Forward Voltage [V]

I_D, Drain Current [A]

图5. 电容特性

图6. 栅极电荷特性

3000

C_iss

V_DS= 20V

_DS= 50V

1000

V_DS= 80V

C_oss

100

*Note:

1. V_GS= 0V

2. f = 1MHz

C_rss

= C + C (C = shorted)

gs gd ds

iss

= C + C

ds gd

oss

rss

= C

*Note: I_D= 50A

15 20

0.1

100

V_DS, Drain-Source Voltage [V]

Q_g, Total Gate Charge [nC]

www.onsemi.com

典型性能特性（接上页）

图7. 击穿电压变化与温度的关系

图8. 导通电阻变化与温度的关系

2.5

1.10

1.08

1.04

1.00

0.96

2.0

1.5

1.0

*Notes:

1. V_GS= 0V

1. V_GS= 10V

2. I_D= 250A

2. I_D= 50A

0.92

-100

0.5

-100

-50

100

150

200

-50

100

150

200

T_J, Junction Temperature [^oC]

图9. 最大安全工作区

图10. 最大漏极电流与壳温的关系

300

V_GS= 10V

10s

100

100s

1ms

Operation in This Area

10ms

is Limited by R _DS(on)

*Notes:

1. T_C= 25^oC

2. T_J= 175^oC

0.1

R_JC= 1.6^oC/W

3. Single Pulse

0.01

0.1

100 200

100

125

150

175

T_C, Case Temperature [^oC]

V_DS, Drain-Source Voltage [V]

图11. Eoss 与漏源极电压的关系

图12. 非箝位感性开关特性

1.5

If R = 0

t^AV= (L)(IAS)/(1.3*RATED BVDSS-VDD)

If R = 0

t^AV= (L/R)In[(IAS*R)/(1.3*RATED BVDSS-VDD)+1]

1.2

0.9

0.6

0.3

0.0

STARTING T_J= 25^oC

STARTING T_J= 150^oC

0.01

0.1

100

1000

100

V_DS, Drain to Source Voltage [V]

t_AV, TIME IN AVALANCHE (ms)

www.onsemi.com

典型性能特性（接上页）

图13. 瞬态热响应曲线

0.5

0.2

0.1

P_DM

0.05

0.1

t₁

t₂

0.02

0.01

*Notes:

1. Z_JC(t) = 1.6^oC/W Max.

2. Duty Factor, D= t₁/t₂

3. T_JM- T_C= P_DM* Z_JC(t)

Single pulse

0.01

10^-5

10^-4

10^-3

10^-2

10^-1

Rectangular Pulse Duration [sec]

t₁，矩形脉冲持续时间[ 秒]

www.onsemi.com

I = 常量

图14. 栅极电荷测试电路与波形

R_L

V_DS

90%

V_DS

V_DD

V_GS

R_G

10%

V_GS

DUT

10V

t_d(on)

t_r

t_d(off)

t_f

t _on

t _off

图15. 阻性开关测试电路与波形

V_GS

图16. 非箝位电感开关测试电路与波形

www.onsemi.com

DUT

V_DS

I _SD

Driver

R_G

Same Type

as DUT

V_DD

V_GS

• dv/dt controlled by R_G

• I_SDcontrolled by pulse period

Gate Pulse Width

--------------------------

V_GS

D =

Gate Pulse Period

10V

( Driver )

I_FM, Body Diode Forward Current

I _SD

di/dt

( DUT )

I_RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V_SD

V_DS

( DUT )

V_DD

Body Diode

Forward Voltage Drop

图17. 二极管恢复dv/dt 峰值测试电路与波形

www.onsemi.com

机械尺寸

图18. TO-220 模塑3 引线Jedec 变体AB (Delta)

封装图纸作为一项服务，提供给考虑飞兆半导体元件的客户。具体参数可能会有变化，且不会做出相应通知。请注意图纸上的版本和 /

或日期，并联系飞兆半导体代表核实或获得最新版本。封装规格并不扩大飞兆公司全球范围内的条款与条件，尤其是其中涉及飞兆公司

产品保修的部分。

www.onsemi.com

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FDP150N10A-F102 [ONSEMI]

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