FDP7N60NZ [ONSEMI]
功率 MOSFET,N 沟道,UniFETTM II,600 V,6.5 A,1.25 Ω,TO-220;型号: | FDP7N60NZ |
厂家: | ONSEMI |
描述: | 功率 MOSFET,N 沟道,UniFETTM II,600 V,6.5 A,1.25 Ω,TO-220 |
文件: | 总11页 (文件大小:728K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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December 2013
FDP7N60NZ / FDPF7N60NZ
TM
N-Channel UniFET II MOSFET
600 V, 6.5 A, 1.25 Ω
Features
Description
•
•
•
•
•
•
•
RDS(on) = 1.05 Ω (Typ.) @ VGS = 10 V, ID = 3.25 A
Low Gate Charge (Typ. 13 nC)
Low Crss (Typ. 7 pF)
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on advanced planar stripe and DMOS
technology. This advanced MOSFET family has the smallest
on-state resistance among the planar MOSFET, and also pro-
vides superior switching performance and higher avalanche
energy strength. In addition, internal gate-source ESD diode
allows UniFET II MOSFET to withstand over 2kV HBM surge
stress. This device family is suitable for switching power con-
verter applications such as power factor correction (PFC), flat
panel display (FPD) TV power, ATX and electronic lamp bal-
lasts.
100% Avalanche Tested
Improved dv/dt Capability
ESD Improved Capability
RoHS Compliant
Applications
•
•
•
•
LCD/ LED/ PDP TV
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
D
G
G
D
S
G
D
TO-220F
TO-220
S
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
FDPF7N60NZ /
FDPF7N60NZT
Symbol
VDSS
VGSS
Parameter
FDP7N60NZ
Unit
Drain to Source Voltage
Gate to Source Voltage
600
V
V
±30
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
6.5
3.9
26
6.5*
3.9*
26*
ID
Drain Current
Drain Current
A
IDM
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
A
mJ
A
EAS
IAR
Single Pulsed Avalanche Energy
Avalanche Current
275
6.5
EAR
dv/dt
Repetitive Avalanche Energy
14.7
10
mJ
V/ns
W
W/oC
oC
Peak Diode Recovery dv/dt
(TC = 25oC)
- Derate Above 25oC
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
147
1.2
33
PD
Power Dissipation
0.26
TJ, TSTG
TL
-55 to +150
300
oC
*Drain current limited by maximum junction temperature.
Thermal Characteristics
FDPF7N60NZ /
FDPF7N60NZT
Symbol
Parameter
FDP7N60NZ
Unit
RθJC
RθJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
0.85
62.5
3.8
oC/W
62.5
www.fairchildsemi.com
©2010 Fairchild Semiconductor Corporation
FDP7N60NZ / FDPF7N60NZ Rev. C2
1
Package Marking and Ordering Information
Part Number
FDP7N60NZ
Top Mark
Package
TO-220
Packing Method
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
50 units
50 units
Tube
Tube
Tube
FDP7N60NZ
FDPF7N60NZ
FDPF7N60NZ
TO-220F
TO-220F
N/A
N/A
FDPF7N60NZ
FDPF7N60NZT
N/A
N/A
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V, TJ = 25oC
D = 250 μA, Referenced to 25oC
DS = 600 V, VGS = 0 V
600
-
-
-
-
V
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient
I
0.6
V/oC
V
-
-
-
-
-
-
1
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
μA
μA
VDS = 480 V, TC = 125oC
10
VGS = ±25 V, VDS = 0 V
±10
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 3.25 A
VDS = 20 V, ID = 3.25 A
3
-
-
5
1.25
-
V
Ω
S
Static Drain to Source On Resistance
Forward Transconductance
1.05
7.3
-
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
-
550
70
7
730
90
10
17
-
pF
pF
pF
nC
nC
nC
VDS = 25 V, VGS = 0 V,
f = 1 MHz
Coss
Crss
Qg(tot)
Qgs
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
13
3
V
V
DS = 480 V, ID = 6.5 A,
GS = 10 V
(Note 4)
Qgd
5.6
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
-
-
-
-
17.5
30
45
70
90
60
ns
ns
ns
ns
VDD = 300 V, ID = 6.5 A,
GS = 10 V, RG = 25 Ω
V
40
25
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
-
-
-
6.5
26
1.4
-
A
A
ISM
VSD
trr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0 V, ISD = 6.5 A
-
V
250
1.4
ns
μC
V
GS = 0 V, ISD = 6.5 A,
dIF/dt = 100 A/μs
Qrr
Reverse Recovery Charge
-
Notes:
1: Repetitive rating: pulse-width limited by maximum junction temperature.
2: L = 13 mH, I = 6.5 A, V = 50 V, R = 25 Ω, starting T = 25°C.
AS
DD
G
J
3:
I
≤ 6.5 A, di/dt ≤ 200 A/μs, V ≤ BV , starting T = 25°C.
DSS J
SD
DD
4: Essentially independent of operating temperature typical characteristics.
www.fairchildsemi.com
©2010 Fairchild Semiconductor Corporation
FDP7N60NZ / FDPF7N60NZ Rev. C2
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
100
20
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
10
10
150oC
25oC
1
1
-55oC
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
* Notes :
1. VDS = 20V
2. 250μs Pulse Test
0.1
0.1
0.1
4
5
6
7
8
1
10
20
VDS, Drain-Source Voltage[V]
VGS, Gate-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
2.0
1.8
1.6
150oC
10
1.4
25oC
VGS = 10V
1.2
VGS = 20V
Notes:
1. VGS = 0V
1.0
* Note : TJ = 25oC
10 12 14
2. 250μs Pulse Test
1
0.4
0.8
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
VSD, Body Diode Forward Voltage [V]
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
5000
10
VDS = 120V
VDS = 300V
VDS = 480V
1000
100
10
Ciss
8
Coss
6
4
2
C
C
C
= C + C (C = shorted)
gs gd ds
iss
Crss
= C + C
ds
oss
rss
gd
= C
gd
* Note:
1. VGS = 0V
2. f = 1MHz
* Note : ID = 6.5A
1
0.1
0
1
10
30
0
2
4
6
8
10
12
14
Qg, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
www.fairchildsemi.com
©2010 Fairchild Semiconductor Corporation
FDP7N60NZ / FDPF7N60NZ Rev. C2
3
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
Figure 8. On-Resistance Variation
vs Temperature
vs. Temperature
1.2
3.0
2.5
2.0
1.5
1.0
1.1
1.0
0.9
* Notes :
1. VGS = 10V
0.5
* Notes :
1. VGS = 0V
2. ID = 3.25A
2. ID = 250uA
0
-100
-50
0
50
100
150
0.8
-100
TJ, Junction Temperature [oC]
-50
0
50
100
150
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
- FDPF7N60NZ / FDPF7N60NZT
Figure 10. Maximum Safe Operating Area
- FDP7N60NZ
100
100
10μs
30μs
100μs
1ms
10
1
100μs
10
1
1ms
10ms
10ms
Operation in This Area
is Limited by R DS(on)
DC
Operation in This Area
is Limited by R DS(on)
DC
* Notes :
1. TC = 25oC
2. TJ = 150oC
* Notes :
1. TC = 25oC
2. TJ = 150oC
0.1
0.01
0.1
0.01
3. Single Pulse
3. Single Pulse
1
10
100
1000
1
10
100
1000
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 11. Maximum Drain Current vs. Case Temperature
8
6
4
2
0
25
50
75
100
125
150
TC, Case Temperature [oC]
www.fairchildsemi.com
©2010 Fairchild Semiconductor Corporation
FDP7N60NZ / FDPF7N60NZ Rev. C2
4
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve
- FDPF7N60NZ / FDPF7N60NZT
5
1
0.5
0.2
0.1
PDM
0.05
t1
0.02
0.01
t2
1
* Notes :
1. ZθJC(t) = 3.8oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
1
10-5
10-4
10-3
10-2
ta
10-1
r P
ls
100
101
102
103
t
,
1
R
e
c
n
g
u
l
a
u
e
D
u
r
a
t
i
o
n
[s
e
c
]
Figure 13. Transient Thermal Response Curve
- FDP7N60NZ
5
1
0.5
0.2
0.1
0.1
0.01
PDM
0.05
0.02
0.01
t1
t2
* Notes :
1. ZθJC(t) = 0.85oC/W Max.
Single pulse
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.001
10-5
10-4
10-3
10-2
10-1
1
10
102
103
t , Rectangular Pulse Duration [sec]
1
www.fairchildsemi.com
©2010 Fairchild Semiconductor Corporation
FDP7N60NZ / FDPF7N60NZ Rev. C2
5
I
= const.
G
Figure 14. Gate Charge Test Circuit & Waveform
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 15. Resistive Switching Test Circuit & Waveforms
VGS
Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms
www.fairchildsemi.com
©2010 Fairchild Semiconductor Corporation
FDP7N60NZ / FDPF7N60NZ Rev. C2
6
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms
www.fairchildsemi.com
©2010 Fairchild Semiconductor Corporation
FDP7N60NZ / FDPF7N60NZ Rev. C2
7
SUPPLIER "B" PACKAGE
SHAPE
ꢀꢁꢂꢂ
3.50
10.67
9.65
SUPPLIER "A" PACKAGE
SHAPE
E
3.40
2.50
16.30
13.90
IF PRESENT, SEE NOTE "D"
E
16.51
15.42
9.40
8.13
E
1
2
3
4.10
2.70
[2.46]
C
14.04
12.70
2.13
2.06
FRONT VIEWS
H
4.70
4.00
1.62
1.42
1.62
1.10
2.67
2.40
"A1"
8.65
7.59
1.00
0.55
SEE NOTE "F"
ꢃ
ꢄ
ꢃ
ꢄ
6.69
6.06
OPTIONAL
CHAMFER
E
14.30
11.50
NOTE "I"
BOTTOM VIEW
NOTES:
A) REFERENCE JEDEC, TO-220, VARIATION AB
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS COMMON TO ALL PACKAGE
SUPPLIERS EXCEPT WHERE NOTED [ ].
D) LOCATION OF MOLDED FEATURE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE)
3
2
1
E DOES NOT COMPLY JEDEC STANDARD VALUE.
F) "A1" DIMENSIONS AS BELOW:
SINGLE GAUGE = 0.51 - 0.61
DUAL GAUGE = 1.10 - 1.45
G) DRAWING FILE NAME: TO220B03REV9
H
PRESENCE IS SUPPLIER DEPENDENT
I) SUPPLIER DEPENDENT MOLD LOCKING HOLES
IN HEATSINK.
0.60
0.36
2.85
2.10
BACK VIEW
SIDE VIEW
10.36
9.96
2.66
2.42
B
A
B
3.28
3.08
7.00
3.40
3.20
0.70
SEE NOTE "F"
SEE NOTE "F"
6.88
6.48
1 X 45°
16.07
15.67
B
16.00
15.60
B
(3.23)
3
1
1.47
1.24
2.96
2.56
2.14
0.90
0.70
0.50
10.05
9.45
M
A
30°
0.45
0.25
0.60
0.45
B
2.54
2.54
4.90
4.50
B
NOTES:
A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
B
DOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
F. OPTION 1 - WITH SUPPORT PIN HOLE.
OPTION 2 - NO SUPPORT PIN HOLE.
G. DRAWING FILE NAME: TO220M03REV5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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