FDP80N06 [ONSEMI]
功率 MOSFET，N 沟道，UniFETTM，60 V，80 A，10 mΩ，TO-220;
| 型号： | FDP80N06 |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，UniFETTM，60 V，80 A，10 mΩ，TO-220 局域网 开关 脉冲 晶体管 |
| 文件： | 总10页 (文件大小：1005K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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November 2013
FDP80N06
N-Channel UniFETTM MOSFET
60 V, 80 A, 10 mΩ
Features
Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
• RDS(on) = 8.5 mΩ (Typ.) @ VGS = 10 V, ID = 40 A
•
•
•
•
•
Low Gate Charge (Typ. 57nC)
Low Crss (Typ. 145pF)
Fast Switching
Improved dv/dt Capability
RoHS Compliant
D
G
G
D
S
TO-220
S
Absolute Maximum Ratings
T = 25°C unless otherwise noted.
C
Symbol
Parameter
Ratings
60
Units
VDSS
VGSS
Drain to Source Voltage
Gate to Source Voltage
V
V
±20
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- P uls ed
80
ID
D r a in C u r r e n t
D rai n Cur rent
A
65
IDM
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
320
A
mJ
A
EAS
IAR
Single Pulsed Avalanche Energy
Avalanche Current
480
80
EAR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
17.6
4.5
mJ
V/ns
W
W/oC
oC
(TC = 25oC)
- Derate above 25oC
176
PD
Power Dissipation
1.17
-55 to +175
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
300
oC
Thermal Characteristics
Symbol
Parameter
Ratings
0.85
Units
RθJC
RθJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
oC/W
62.5
©2007 Fairchild Semiconductor
Corporation FDP80N06 Rev. C0
1
www.fairchildsemi.com
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
Tube
FDP80N06
FDP80N06
TO-220
N/A
50 units
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V, TJ = 25oC
60
-
-
-
-
V
∆BVDSS
Breakdown Voltage Temperature
Coefficient
I
D = 250µA, Referenced to 25oC
0.075
V/oC
/
∆TJ
V
DS = 60V, VGS = 0V
-
-
-
-
-
-
1
IDSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
µA
VDS = 48V, TC = 150oC
10
IGSS
VGS = ±20V, VDS = 0V
±100
nA
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
VGS = VDS, ID = 250µA
VGS = 10V, ID = 40A
VDS = 25V, ID = 40A
2.0
--
4.0
10
-
V
mΩ
S
Static Drain to Source On Resistance
Forward Transconductance
-
-
8.5
67
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
-
-
-
2450
910
3190
1190
190
pF
pF
pF
VDS = 25V, VGS = 0V
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
145
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
-
-
-
-
32
259
136
113
57
75
528
282
236
74
-
ns
ns
VDD = 30V, ID = 80A
RG = 25Ω
Turn-On Rise Time
Turn-Off Delay Time
ns
Turn-Off Fall Time
ns
(Note 4)
Qg(tot)
Qgs
Qgd
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
-
-
-
nC
nC
nC
V
DS = 48V, ID = 80A
VGS = 10V
15
(Note 4)
24
-
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
-
-
-
80
320
1.4
-
A
A
ISM
VSD
trr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, ISD = 80A
-
V
64
127
ns
nC
V
GS = 0V, ISD = 80A
dIF/dt = 100A/µs
Qrr
Reverse Recovery Charge
-
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature.
2: L = 0.15mH, I = 80A, V = 50V, R = 25Ω, Starting T = 25°C.
AS
DD
G
J
3: I
≤ 80A, di/dt ≤ 200A/µs, V ≤ BV
, Starting T = 25°C.
SD
DD
DSS
J
4: Essentially independent of operating temperature typical characteristics.
©2007 Fairchild Semiconductor
Corporation FDP80N06 Rev. C0
2
www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
400
500
VGS = 10.0 V
*Notes:
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
1. VDS = 20V
2. 250µs Pulse Test
100
100
-55oC
175oC
10
25oC
10
*Notes:
1
1. 250µs Pulse Test
2. TC = 25oC
0.4
0.02
1
0.1
1
10
0
2
4
10
VDS,Drain-Source Voltage[V]
VGS,Gate-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
500
0.03
100
175oC
0.02
25oC
VGS = 10V
10
0.01
VGS = 20V
*Notes:
1. VGS = 0V
*Note: TJ = 25oC
240 320
2. 250µs Pulse Test
1
0.0
0.00
0.5
1.0
1.5
2.0
0
80
160
VSD, Body Diode Forward Voltage [V]
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
6000
10
C
C
C
= C + C (C = shorted)
gs gd ds
iss
Ciss
= C + C
ds gd
oss
rss
VDS = 15V
= C
gd
VDS = 30V
8
VDS = 48V
4500
3000
1500
0
Coss
*Note:
1. VGS = 0V
2. f = 1MHz
6
4
2
Crss
*Note: ID = 80A
45
0
0.1
1
10
30
0
15
30
60
VDS, Drain-Source Voltage [V]
Qg, Total Gate Charge [nC]
©2007 Fairchild Semiconductor
Corporation FDP80N06 Rev. C0
3
www.fairchildsemi.com
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
2.5
2.0
1.5
1.2
1.1
1.0
1.0
0.9
*Notes:
1. VGS = 0V
*Notes:
1. VGS = 10V
2. ID = 1mA
2. ID = 40A
0.5
-100
0.8
-100
-50
0
50
100
150 200
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
1000
90
75
60
45
30
15
0
30µs
100µs
100
1ms
10ms
10
DC
Operation in This Area
is Limited by R DS(on)
1
*Notes:
1. TC = 25oC
2. TJ = 175oC
0.1
3. Single Pulse
0.01
1
10
VDS, Drain-Source Voltage [V]
80
25
50
75
100
125
150
175
TC, Case Temperature [oC]
Figure 11. Transient Thermal Response Curve
2
1
0.5
0.2
0.1
0.1
0.01
1E-3
PDM
0.05
t1
t2
0.02
0.01
*Notes:
1. ZθJC(t) = 0.85oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
10-5
10-4
10-3
10-2
10-1
100
101
Rectangular Pulse Duration [sec]
©2007 Fairchild Semiconductor
Corporation FDP80N06 Rev. C0
4
www.fairchildsemi.com
Figure 12. Gate Charge Test Circuit & Waveform
VGS
Same Type
50KΩ
as DUT
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
I
= const.
G
Charge
Figure 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
L IAS
VDS
I D
BVDSS
IAS
RG
VDD
ID (t)
V
VDS (t)
VDD
DUT
GS
t p
t p
Time
©2007 Fairchild Semiconductor
Corporation FDP80N06 Rev. C0
5
www.fairchildsemi.com
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
©2007 Fairchild Semiconductor
Corporation FDP80N06 Rev. C0
6
www.fairchildsemi.com
Mechanical Dimensions
Figure 16. TO-220, Molded, 3Lead, Jedec Variation AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-003
©2007 Fairchild Semiconductor
Corporation FDP80N06 Rev. C0
7
www.fairchildsemi.com
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AccuPower™
AX-CAP *
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
F-PFS™
FRFET
Sync-Lock™
®*
®
®
®
tm
®
Global Power ResourceSM
GreenBridge™
Green FPS™
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
™
®
TinyBoost
TinyBuck
®
®
Green FPS™ e-Series™
Gmax™
GTO™
TinyCalc™
®
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC™
TriFault Detect™
Current Transfer Logic™
IntelliMAX™
®
DEUXPEED
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Dual Cool™
®
EcoSPARK
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
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ESBC™
®
TRUECURRENT *
SerDes™
SMART START™
®
Solutions for Your Success™
®
®
SPM
Fairchild
®
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SuperFET
SuperSOT™-3
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Fairchild Semiconductor
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®
®
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®
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®
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OPTOLOGIC
OPTOPLANAR
FACT
FAST
®
®
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®
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Datasheet contains the design specifications for product development. Specifications
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Not In Production
Rev. I66
www.fairchildsemi.com
©2007 Fairchild Semiconductor
Corporation FDP80N06 Rev. C0
8
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
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