FDP8870 [ONSEMI]
N 沟道 PowerTrench® MOSFET 30V，156A，4.1mΩ;
| 型号： | FDP8870 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道 PowerTrench® MOSFET 30V，156A，4.1mΩ 局域网 PC 开关 晶体管 |
| 文件： | 总12页 (文件大小：516K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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May 2008
FDP8870
N-Channel PowerTrench MOSFET
tmM
®
30V, 156A, 4.1mΩ
General Description
Features
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
•
•
•
r
= 4.1mΩ, V = 10V, I = 35A
GS D
DS(ON)
r
= 4.6mΩ, V = 4.5V, I = 35A
DS(ON)
GS
D
High performance trench technology for extremely low
r
r
and fast switching speed.
DS(ON)
DS(ON)
•
•
Low gate charge
Applications
High power and current handling capability
•
DC/DC converters
• RoHS Compliant
(FLANGE)
DRAIN
D
S
SOURCE
DRAIN
GATE
G
TO-220AB
FDP SERIES
MOSFET Maximum Ratings T = 25°C unless otherwise noted
C
Symbol
Parameter
Ratings
30
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
V
V
DSS
GS
±20
Drain Current
o
156
147
A
A
Continuous (T = 25 C, V = 10V) (Note 1)
C
GS
o
I
Continuous (T = 25 C, V = 4.5V) (Note 1)
C GS
D
o
o
Continuous (T
= 25 C, V = 10V, with R = 62 C/W)
θJA
19
A
amb
GS
Pulsed
Figure 4
300
A
E
P
Single Pulse Avalanche Energy (Note 2)
Power dissipation
mJ
W
AS
160
D
o
o
Derate above 25 C
1.07
W/ C
o
T , T
Operating and Storage Temperature
-55 to 175
C
J
STG
Thermal Characteristics
o
R
R
Thermal Resistance Junction to Case TO-220
Thermal Resistance Junction to Ambient TO-220 ( Note 3)
0.94
62
C/W
θJC
θJA
o
C/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
N/A
Quantity
50 units
FDP8870
FDP8870
TO-220AB
Tube
©2008 Fairchild Semiconductor Corporation
FDP8870 Rev. A3
Electrical Characteristics T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
= 250µA, V = 0V
30
-
-
-
-
-
-
V
VDSS
D
GS
V
V
V
= 24V
= 0V
1
DS
GS
GS
I
I
µA
nA
DSS
o
T
= 150 C
-
250
±100
C
= ±20V
-
GSS
On Characteristics
V
Gate to Source Threshold Voltage
V
= V , I = 250µA
1.2
-
2.5
V
GS(TH)
GS
DS
D
I
I
I
= 35A, V = 10V
-
-
0.0034 0.0041
0.0040 0.0046
D
D
D
GS
= 35A, V = 4.5V
GS
r
Drain to Source On Resistance
Ω
DS(ON)
= 35A, V = 10V,
GS
-
0.0051 0.0065
o
T = 175 C
J
Dynamic Characteristics
C
C
C
R
Input Capacitance
-
-
-
-
-
-
-
-
-
-
5200
970
570
2.1
106
56
-
pF
pF
pF
Ω
ISS
OSS
RSS
G
V
= 15V, V = 0V,
GS
DS
Output Capacitance
-
f = 1MHz
Reverse Transfer Capacitance
Gate Resistance
-
-
V
V
V
V
= 0.5V, f = 1MHz
= 0V to 10V
GS
GS
GS
GS
Q
Q
Q
Q
Q
Q
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
132
69
6.5
-
nC
nC
nC
nC
nC
nC
g(TOT)
g(5)
g(TH)
gs
= 0V to 5V
V
= 15V
DD
= 35A
= 0V to 1V
5.0
15
I
D
I = 1.0mA
g
10
-
gs2
23
-
gd
Switching Characteristics (V = 10V)
GS
t
t
t
t
t
t
Turn-On Time
Turn-On Delay Time
Rise Time
-
-
-
-
-
-
-
11
105
70
46
-
168
ns
ns
ns
ns
ns
ns
ON
-
d(ON)
-
V
V
= 15V, I = 35A
r
DD
GS
D
= 4.5V, R = 3.3Ω
Turn-Off Delay Time
Fall Time
-
-
GS
d(OFF)
f
Turn-Off Time
173
OFF
Drain-Source Diode Characteristics
I
I
I
I
= 35A
= 15A
-
-
-
-
-
-
-
-
1.25
1.0
37
V
V
SD
SD
SD
SD
V
Source to Drain Diode Voltage
SD
t
Reverse Recovery Time
= 35A, dI /dt = 100A/µs
ns
nC
rr
SD
Q
Reverse Recovered Charge
= 35A, dI /dt = 100A/µs
21
RR
SD
Notes:
1: Package current limitation is 80A.
2: Starting T = 25°C, L = 0.15mH, I = 64A, V = 27V, V = 10V.
J
AS
DD
GS
3: Pulse width = 100s.
©2008 Fairchild Semiconductor Corporation
FDP8870 Rev. A3
Typical Characteristics T = 25°C unless otherwise noted
C
1.2
175
1.0
0.8
0.6
0.4
0.2
0
150
125
100
75
CURRENT LIMITED
BY PACKAGE
50
25
0
0
25
50
75
100
150
175
125
o
25
50
75
100
125
150
175
T
, CASE TEMPERATURE ( C)
o
C
T
, CASE TEMPERATURE ( C)
C
Figure 1. Normalized Power Dissipation vs Case
Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
1
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
SINGLE PULSE
0.01
PEAK T = P
x Z
x R
+ T
θJC C
J
DM
θJC
-5
-4
-3
-2
-1
0
1
10
10
10
10
t, RECTANGULAR PULSE DURATION (s)
10
10
10
Figure 3. Normalized Maximum Transient Thermal Impedance
1000
o
T
= 25 C
C
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
FOR TEMPERATURES
o
ABOVE 25 C DERATE PEAK
CURRENT AS FOLLOWS:
V
= 4.5V
GS
175 - T
150
C
I = I
25
100
50
-5
-4
-3
-2
-1
0
1
10
10
10
10
t, PULSE WIDTH (s)
10
10
10
Figure 4. Peak Current Capability
©2008 Fairchild Semiconductor Corporation
FDP8870 Rev. A3
Typical Characteristics T = 25°C unless otherwise noted
C
1000
100
10
500
If R = 0
= (L)(I )/(1.3*RATED BV
t
- V
DD
)
AV
10µs
AS
DSS
If R ≠ 0
= (L/R)ln[(I *R)/(1.3*RATED BV
t
AV
- V ) +1]
DD
AS
DSS
100
100µs
o
STARTING T = 25 C
J
OPERATION IN THIS
AREA MAY BE
10
LIMITED BY r
1ms
DS(ON)
10ms
DC
1
o
STARTING T = 150 C
J
SINGLE PULSE
T
= MAX RATED
J
o
T
= 25 C
C
0.1
1
0.01
0.1
1
10
100
1
10
, DRAIN TO SOURCE VOLTAGE (V)
60
V
t , TIME IN AVALANCHE (ms)
AV
DS
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 5. Forward Bias Safe Operating Area
160
160
PULSE DURATION = 80µs
V
= 5V
GS
DUTY CYCLE = 0.5% MAX
V
= 15V
V
= 4V
DD
GS
120
80
40
0
120
80
40
0
V
= 10V
o
GS
T
= 175 C
J
V
= 3V
GS
o
T
= 25 C
J
o
T
= 25 C
C
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
o
T
= -55 C
J
0
0.25
0.5
0.75
1.0
1.5
2.0
2.5
3.0
3.5
V
, GATE TO SOURCE VOLTAGE (V)
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
GS
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
1.6
10
8
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
I
= 35A
D
1.4
1.2
1.0
0.8
0.6
6
4
I
= 1A
D
V
= 10V, I = 35A
D
GS
2
2
4
6
8
10
-80
-40
0
40
80
120
160
200
o
T , JUNCTION TEMPERATURE ( C)
V
, GATE TO SOURCE VOLTAGE (V)
J
GS
Figure 9. Drain to Source On Resistance vs Gate
Voltage and Drain Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
©2008 Fairchild Semiconductor Corporation
FDP8870 Rev. A3
Typical Characteristics T = 25°C unless otherwise noted
C
1.2
1.1
1.0
0.9
1.4
1.2
1.0
0.8
0.6
0.4
I
= 250µA
D
V
= V , I = 250µA
DS D
GS
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
o
o
T , JUNCTION TEMPERATURE ( C)
T , JUNCTION TEMPERATURE ( C)
J
J
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10000
10
V
= 15V
DD
C
= C + C
GS GD
ISS
8
6
4
2
0
C
C
+ C
OSS
DS GD
C
= C
GD
RSS
1000
400
WAVEFORMS IN
DESCENDING ORDER:
I
= 35A
= 5A
D
I
V
= 0V, f = 1MHz
D
GS
0
20
40
60
80
100
30
0.1
1
10
V
, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE (nC)
DS
g
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge Waveforms for Constant
Gate Current
©2008 Fairchild Semiconductor Corporation
FDP8870 Rev. A3
Test Circuits and Waveforms
V
DS
BV
DSS
t
P
L
V
DS
I
VARY t TO OBTAIN
P
AS
+
-
V
DD
R
REQUIRED PEAK I
G
AS
V
DD
V
GS
DUT
t
P
I
0V
AS
0
0.01Ω
t
AV
Figure 15. Unclamped Energy Test Circuit
Figure 16. Unclamped Energy Waveforms
V
DS
V
Q
DD
g(TOT)
V
GS
V
L
DS
V
= 10V
GS
Q
V
g(5)
GS
+
-
Q
gs2
V
V
= 5V
DD
GS
DUT
V
= 1V
GS
I
g(REF)
0
Q
g(TH)
Q
Q
gs
gd
I
g(REF)
0
Figure 17. Gate Charge Test Circuit
Figure 18. Gate Charge Waveforms
V
DS
t
t
ON
OFF
t
d(OFF)
t
d(ON)
R
L
t
t
f
r
V
DS
90%
90%
+
-
V
GS
V
DD
10%
10%
0
DUT
90%
50%
R
GS
V
GS
50%
PULSE WIDTH
V
10%
GS
0
Figure 19. Switching Time Test Circuit
Figure 20. Switching Time Waveforms
©2008 Fairchild Semiconductor Corporation
FDP8870 Rev. A3
PSPICE Electrical Model
.SUBCKT FDP8870 2 1 3 ; rev December 2003
Ca 12 8 4.5e-9
Cb 15 14 4.5e-9
Cin 6 8 4.7e-9
LDRAIN
DPLCAP
5
DRAIN
2
10
Dbody 7 5 DbodyMOD
Dbreak 5 11 DbreakMOD
Dplcap 10 5 DplcapMOD
RLDRAIN
RSLC1
51
DBREAK
+
RSLC2
5
ESLC
11
51
Ebreak 11 7 17 18 33.45
Eds 14 8 5 8 1
Egs 13 8 6 8 1
Esg 6 10 6 8 1
Evthres 6 21 19 8 1
-
+
50
-
17
DBODY
RDRAIN
6
8
EBREAK 18
-
ESG
EVTHRES
+
16
21
+
-
19
8
MWEAK
Evtemp 20 6 18 22 1
LGATE
EVTEMP
RGATE
GATE
1
6
+
-
18
22
MMED
It 8 17 1
9
20
MSTRO
8
RLGATE
Lgate 1 9 3.6e-9
Ldrain 2 5 1.0e-9
Lsource 3 7 3.3e-9
LSOURCE
CIN
SOURCE
3
7
RSOURCE
RLSOURCE
RLgate 1 9 36
RLdrain 2 5 10
RLsource 3 7 33
S1A
S2A
RBREAK
12
15
13
8
14
13
17
18
RVTEMP
19
S1B
S2B
Mmed 16 6 8 8 MmedMOD
Mstro 16 6 8 8 MstroMOD
Mweak 16 21 8 8 MweakMOD
13
CB
CA
IT
14
-
+
+
VBAT
6
8
5
8
EGS
EDS
+
Rbreak 17 18 RbreakMOD 1
Rdrain 50 16 RdrainMOD 2.15e-3
Rgate 9 20 2.1
-
-
8
22
RVTHRES
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
Rsource 8 7 RsourceMOD 9e-4
Rvthres 22 8 RvthresMOD 1
Rvtemp 18 19 RvtempMOD 1
S1a 6 12 13 8 S1AMOD
S1b 13 12 13 8 S1BMOD
S2a 6 15 14 13 S2AMOD
S2b 13 15 14 13 S2BMOD
Vbat 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*500),10))}
.MODEL DbodyMOD D (IS=7.5E-12 IKF=17 N=1.01 RS=2.1e-3 TRS1=2e-3 TRS2=2e-7
+ CJO=1.9e-9 M=0.57 TT=9e-11 XTI=2.6)
.MODEL DbreakMOD D (RS=8e-2 TRS1=1e-3 TRS2=-8.9e-6)
.MODEL DplcapMOD D (CJO=1.75e-9 IS=1e-30 N=10 M=0.4)
.MODEL MmedMOD NMOS (VTO=2.1 KP=30 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=2.1 T_ABS=25)
.MODEL MstroMOD NMOS (VTO=2.51 KP=650 IS=1e-30 N=10 TOX=1 L=1u W=1u T_ABS=25)
.MODEL MweakMOD NMOS (VTO=1.67 KP=0.1 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=21 RS=0.1 T_ABS=25)
.MODEL RbreakMOD RES (TC1=8.3e-4 TC2=-9e-7)
.MODEL RdrainMOD RES (TC1=2.3e-3 TC2=5e-6)
.MODEL RSLCMOD RES (TC1=1e-4 TC2=1e-6)
.MODEL RsourceMOD RES (TC1=8e-3 TC2=1e-6)
.MODEL RvthresMOD RES (TC1=-2.3e-3 TC2=-9e-6)
.MODEL RvtempMOD RES (TC1=-3e-3 TC2=2e-7)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-4 VOFF=-2)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-2 VOFF=-4)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-1 VOFF=-0.5)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-0.5 VOFF=-1)
.ENDS
Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank
Wheatley.
©2008 Fairchild Semiconductor Corporation
FDP8870 Rev. A3
SABER Electrical Model
rev December 2003
template FDP8870 n2,n1,n3 =m_temp
electrical n2,n1,n3
number m_temp=25
{
var i iscl
dp..model dbodymod = (isl=7.5e-12,ikf=17,nl=1.01,rs=2.1e-3,trs1=2e-3,trs2=2e-7,cjo=1.9e-9,m=0.57,tt=9e-11,xti=2.6)
dp..model dbreakmod = (rs=8e-2,trs1=1e-3,trs2=-8.9e-6)
dp..model dplcapmod = (cjo=1.75e-9,isl=10e-30,nl=10,m=0.4)
m..model mmedmod = (type=_n,vto=2.1,kp=30,is=1e-30, tox=1)
m..model mstrongmod = (type=_n,vto=2.51,kp=650,is=1e-30, tox=1)
m..model mweakmod = (type=_n,vto=1.67,kp=0.1,is=1e-30, tox=1,rs=0.1)
LDRAIN
sw_vcsp..model s1amod = (ron=1e-5,roff=0.1,von=-4,voff=-2)
sw_vcsp..model s1bmod = (ron=1e-5,roff=0.1,von=-2,voff=-4)
sw_vcsp..model s2amod = (ron=1e-5,roff=0.1,von=-1,voff=-0.5)
sw_vcsp..model s2bmod = (ron=1e-5,roff=0.1,von=-0.5,voff=-1)
c.ca n12 n8 = 4.5e-9
DPLCAP
5
DRAIN
2
10
RLDRAIN
RSLC1
51
RSLC2
c.cb n15 n14 = 4.5e-9
c.cin n6 n8 = 4.7e-9
ISCL
DBREAK
11
50
-
dp.dbody n7 n5 = model=dbodymod
dp.dbreak n5 n11 = model=dbreakmod
dp.dplcap n10 n5 = model=dplcapmod
RDRAIN
6
8
ESG
DBODY
EVTHRES
+
16
21
+
-
19
8
MWEAK
LGATE
EVTEMP
spe.ebreak n11 n7 n17 n18 = 33.45
RGATE
GATE
1
+
6
-
18
22
EBREAK
+
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evthres n6 n21 n19 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
MMED
9
20
MSTRO
8
17
18
-
RLGATE
LSOURCE
CIN
SOURCE
3
7
RSOURCE
RLSOURCE
i.it n8 n17 = 1
S1A
S2A
RBREAK
12
15
13
8
14
13
17
18
l.lgate n1 n9 = 3.6e-9
l.ldrain n2 n5 = 1.0e-9
l.lsource n3 n7 = 3.3e-9
RVTEMP
19
S1B
S2B
13
CB
CA
IT
14
-
+
+
res.rlgate n1 n9 = 36
res.rldrain n2 n5 = 10
res.rlsource n3 n7 = 33
VBAT
6
8
5
8
EGS
EDS
+
-
-
8
22
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u, temp=m_temp
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u, temp=m_temp
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u, temp=m_temp
RVTHRES
res.rbreak n17 n18 = 1, tc1=8.3e-4,tc2=-9e-7
res.rdrain n50 n16 = 2.15e-3, tc1=2.3e-3,tc2=5e-6
res.rgate n9 n20 = 2.1
res.rslc1 n5 n51 = 1e-6, tc1=1e-4,tc2=1e-6
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 9e-4, tc1=8e-3,tc2=1e-6
res.rvthres n22 n8 = 1, tc1=-2.3e-3,tc2=-9e-6
res.rvtemp n18 n19 = 1, tc1=-3e-3,tc2=2e-7
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/500))** 10))
}
}
©2008 Fairchild Semiconductor Corporation
FDP8870 Rev. A3
PSPICE Thermal Model
JUNCTION
th
REV 23 December 2003
FDP8870T
CTHERM1 TH 6 1e-3
CTHERM2 6 5 2e-3
CTHERM3 5 4 3e-3
CTHERM4 4 3 9e-3
CTHERM5 3 2 1e-2
CTHERM6 2 TL 2e-2
RTHERM1
RTHERM2
RTHERM3
RTHERM4
RTHERM5
RTHERM6
CTHERM1
6
RTHERM1 TH 6 3e-2
RTHERM2 6 5 8e-2
RTHERM3 5 4 1.1e-1
RTHERM4 4 3 1.6e-1
RTHERM5 3 2 1.72e-1
RTHERM6 2 TL 2e-1
CTHERM2
CTHERM3
CTHERM4
CTHERM5
CTHERM6
5
SABER Thermal Model
SABER thermal model FDP8870T
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 =1e-3
ctherm.ctherm2 6 5 =2e-3
ctherm.ctherm3 5 4 =3e-3
ctherm.ctherm4 4 3 =9e-3
ctherm.ctherm5 3 2 =1e-2
ctherm.ctherm6 2 tl =2e-2
4
3
2
rtherm.rtherm1 th 6 =3e-2
rtherm.rtherm2 6 5 =8e-2
rtherm.rtherm3 5 4 =1.1e-1
rtherm.rtherm4 4 3 =1.6e-1
rtherm.rtherm5 3 2 =1.72e-1
rtherm.rtherm6 2 tl =2e-1
}
tl
CASE
©2008 Fairchild Semiconductor Corporation
FDP8870 Rev. A3
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FDP8870 Rev. A3
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相关型号：
FDP8870_F085
Power Field-Effect Transistor, 19A I(D), 30V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
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