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FDPF035N06B-F154 [ONSEMI]

N-Channel PowerTrench® MOSFET;
FDPF035N06B-F154
型号： FDPF035N06B-F154
厂家： ONSEMI    ONSEMI
描述：

N-Channel PowerTrench® MOSFET
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MOSFET – N-Channel,  
POWERTRENCH)  
60 V, 88 A, 3.5 mW  
FDPF035N06B-F154  
Description  
www.onsemi.com  
This N−Channel MOSFET is produced using ON Semiconductor’s  
advanced POWERTRENCH process that has been tailored to  
minimize the on−state resistance while maintaining superior switching  
performance.  
V
R
MAX  
I MAX  
D
DSS  
DS(ON)  
60 V  
3.5 mW @ 10 V  
88 A  
Features  
D
• R  
= 2.91 mW (Typ.)@ V = 10 V, I = 88 A  
GS D  
DS(on)  
• Low FOM R *Q  
DS(on) G  
• Low Reverse Recovery Charge, Q  
• Soft Reverse Recovery Body Diode  
rr  
G
• Enables Highly Efficiency in Synchronous Rectification  
• Fast Switching Speed  
• 100% UIL Tested  
S
• These Devices are Pb−Free and are RoHS Compliant  
MOSFET  
Applications  
• Synchronous Rectification for ATX / Server / Telecom PSU  
• Battery Protection Circuit  
• Motor Drives and Uninterruptible Power Supplies  
• Renewable System  
G
D
S
TO−220F Ultra Narrow Lead  
CASE 221BN  
MARKING DIAGRAM  
$Y&Z&3&K  
FDPF  
035N06B  
$Y  
&Z  
&3  
&K  
= ON Semiconductor Logo  
= Assembly Plant Code  
= Data Code (Year & Week)  
= Lot  
FDPF035N06B  
= Specific Device Code  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 2 of  
this data sheet.  
© Semiconductor Components Industries, LLC, 2020  
1
Publication Order Number:  
FDPF035N06B−F154/D  
December, 2020 − Rev. 0  
FDPF035N06B−F154  
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise noted)  
C
Symbol  
Parameter  
Value  
60  
Unit  
V
V
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current  
DSS  
GSS  
V
20  
V
I
D
− Continuous (T = 25°C, Silicon Limited)  
88  
A
C
− Continuous (T = 100°C, Silicon Limited)  
62  
C
I
Drain Current  
− Pulsed (Note 1)  
352  
A
mJ  
DM  
E
Single Pulsed Avalanche Energy (Note 2)  
Peak Diode Recovery dv/dt (Note 3)  
600  
AS  
dv/dt  
6.0  
V/ns  
W
P
Power Dissipation  
(T = 25°C)  
C
46.3  
0.31  
−55 to +175  
300  
D
− Derate Above 25°C  
W/°C  
°C  
T , T  
Operating and Storage Temperature Range  
J
STG  
T
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 Seconds  
°C  
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
1. Repetitive rating: pulse−width limited by maximum junction temperature.  
2. L = 3 mH, I = 20 A, starting T = 25°C.  
AS  
J
3. I ≤ 100 A, di/dt ≤ 200 A/ms, V ≤ BV  
, starting T = 25°C.  
SD  
DD  
DSS  
J
THERMAL CHARACTERISTICS  
Symbol  
Parameter  
Value  
3.24  
Unit  
R
R
Thermal Resistance, Junction to Case, Max.  
Thermal Resistance, Junction to Ambient, Max.  
_C/W  
_C/W  
q
JC  
JA  
62.5  
q
PACKAGE MARKING AND ORDERING INFORMATION  
Part Number  
Top Marking  
Package  
Shipping  
50 Units / Tube  
FDPF035N06B−F154  
FDPF035N06B  
TO−220F  
(Pb−Free)  
www.onsemi.com  
2
 
FDPF035N06B−F154  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
C
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
OFF CHARACTERISTICS  
BV  
Drain to Source Breakdown Voltage  
I
I
= 250 mA, V = 0 V  
60  
−
−
−
V
DSS  
D
GS  
DBV  
/ DT  
Breakdown Voltage Temperature  
Coefficient  
= 250 mA, Referenced to 25_C  
−
0.03  
V/_C  
DSS  
J
D
I
Zero Gate Voltage Drain Current  
Gate to Body Leakage Current  
V
V
= 48 V, V = 0 V  
−
−
−
−
1
mA  
DSS  
DS  
GS  
I
=
20 V, V = 0 V  
100  
nA  
GSS  
GS  
DS  
ON CHARACTERISTICS  
V
Gate Threshold Voltage  
V
GS  
V
GS  
V
DS  
= V , I = 250 mA  
2
−
−
−
4
3.5  
−
V
mW  
S
GS(th)  
DS(on)  
DS  
D
R
Static Drain to Source On Resistance  
Forward Transconductance  
= 10 V, I = 88 A  
2.91  
176  
D
g
FS  
= 20 V, I = 88 A  
D
DYNAMIC CHARACTERISTICS  
C
Input Capacitance  
V
= 30 V, V = 0 V, f = 1 MHz  
−
−
−
−
−
−
−
−
−
−
−
6035  
1685  
55  
8030  
pF  
pF  
pF  
iss  
DS  
GS  
C
Output Capacitance  
2240  
−
oss  
C
Reverse Transfer Capacitance  
Energy Related Output Capacitance  
Total Gate Charge at 10 V  
Gate to Source Gate Charge  
Gate to Drain “Miller” Charge  
Gate Plateau Voltage  
rss  
C
V
V
= 30 V, V = 0 V  
2619  
76  
−
oss(er)  
DS  
GS  
Q
= 30 V, I = 100 A, V = 10 V  
99  
−
nC  
nC  
nC  
V
g(tot)  
DS  
D
GS  
(Note 4)  
Q
29  
gs  
Q
12  
−
gd  
V
5.2  
−
plateau  
Q
Total Gate Charge Sync.  
Output Charge  
V
V
= 0 V, I = 50 A  
67.3  
92.4  
2.0  
−
nC  
nC  
W
sync  
DS  
D
Q
= 30 V, V = 0 V  
−
oss  
DS  
GS  
ESR  
Equivalent Series Resistance (G−S)  
f = 1 MHz  
−
SWITCHING CHARACTERISTICS  
t
Turn-On Delay Time  
Turn-On Rise Time  
Turn-Off Delay Time  
Turn-Off Fall Time  
V
= 30 V, I = 100 A, V = 10 V,  
−
−
−
−
32  
33  
56  
23  
74  
76  
ns  
ns  
ns  
ns  
d(on)  
DD  
g
D
GS  
R = 4.7 W  
t
r
(Note 4)  
t
122  
56  
d(off)  
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS  
I
Maximum Continuous Source to Drain Diode Forward Current  
Maximum Pulsed Source to Drain Diode Forward Current  
−
−
−
−
−
−
−
88  
352  
1.25  
−
A
A
S
I
SM  
V
SD  
Source to Drain Diode Forward Voltage  
Reverse Recovery Time  
V
V
= 0 V, I = 88 A  
−
V
GS  
SD  
t
rr  
= 0 V, I = 100 A,  
71  
78  
ns  
nC  
GS  
SD  
dI /dt = 100 A/ms  
F
Q
Reverse Recovery Charge  
−
rr  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
4. Essentially independent of operating temperature typical characteristics.  
www.onsemi.com  
3
 
FDPF035N06B−F154  
TYPICAL PERFORMANCE CHARACTERISTICS  
200  
400  
100  
V
= 10 V  
DS  
250 ms Pulse Test  
100  
10  
1
25°C  
175°C  
−55°C  
V
=15.0 V  
10.0 V  
8.0 V  
7.0 V  
6.5 V  
6.0 V  
5.5 V  
5.0 V  
GS  
10  
2
250 ms Pulse Test  
= 25°C  
T
C
0.1  
1
10  
300  
60  
2
3
GS  
4
5
6
7
V
DS  
, Drain−Source Voltage (V)  
V
, Gate−Source Voltage (V)  
Figure 1. On−Region Characteristics  
Figure 2. Transfer Characteristics  
3.5  
3.0  
2.5  
2.0  
200  
100  
V
= 0 V  
T
C
= 25°C  
GS  
250 ms Pulse Test  
V
V
= 10 V  
= 20 V  
GS  
175°C  
25°C  
GS  
10  
1
0
50  
100  
150  
200  
250  
0.2  
0.4  
, Body Diode Forward Voltage (V)  
SD  
0.6  
0.8  
1.0  
1.2  
1.4  
I , Drain Current (A)  
D
V
Figure 4. Body Diode Forward Voltage  
Variation vs. Source Current and  
Temperature  
Figure 3. On−Resistance Variation vs.  
Drain Current and Gate Voltage  
10  
10000  
C
iss  
V
V
V
= 12 V  
= 30 V  
= 48 V  
DS  
DS  
DS  
8
6
4
2
0
1000  
100  
10  
C
oss  
V
= 0 V  
GS  
f = 1 MHz  
C
C
C
= C + C (C = shorted)  
iss  
gs gd ds  
C
rss  
= C + C  
oss  
rss  
ds  
gd  
= C  
I
D
= 100 A  
gd  
0
20  
40  
60  
80 90  
0.1  
1
10  
Q , Total Gate Charge (nC)  
V
DS  
, Drain−Source Voltage (V)  
g
Figure 5. Capacitance Characteristics  
Figure 6. Gate Charge Characteristics  
www.onsemi.com  
4
FDPF035N06B−F154  
TYPICAL PERFORMANCE CHARACTERISTICS (continued)  
1.10  
1.05  
1.00  
1.8  
V
I
= 0 V  
= 250 mA  
V
I
= 10 V  
= 88 A  
GS  
GS  
D
D
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.95  
0.90  
−100 −50  
50  
100  
150  
200  
100  
60  
0
−100 −50  
50  
100  
150  
200  
0
T , Junction Temperature (°C)  
T , Junction Temperature (°C)  
J
J
Figure 7. Breakdown Voltage Variation  
vs. Temperature  
Figure 8. On−Resistance Variation  
vs. Temperature  
1000  
100  
V
= 10 V  
GS  
100  
80  
60  
40  
20  
0
100 ms  
10  
1 ms  
Operation in this Area  
is Limited by R  
10 ms  
100 ms  
DS(on)  
1
0.1  
SINGLE PULSE  
= 25°C  
DC  
T
C
T = 175°C  
J
R
= 3.24°C/W  
R
= 3.24°C/W  
qJC  
q
JC  
0.01  
25  
50  
75  
100  
125  
150  
175  
0.1  
1
10  
V
DS  
, Drain−Source Voltage (V)  
T , Case Temperature (°C)  
C
Figure 9. Maximum Safe Operating Area  
Figure 10. Maximum Drain Current  
vs. Case Temperature  
200  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
100  
T = 150°C  
J
T = 25°C  
J
10  
1
0
10  
20  
30  
40  
50  
0.001 0.01  
0.1  
t , Time in Avalanche (ms)  
AV  
1
10  
100  
1000  
V
DS  
, Drain to Source Voltage (V)  
Figure 11. EOSS vs. Drain to Source Voltage  
Figure 12. Unclamped Inductive  
Switching Capability  
www.onsemi.com  
5
FDPF035N06B−F154  
TYPICAL PERFORMANCE CHARACTERISTICS (continued)  
4
1
0.5  
0.2  
0.1  
0.05  
0.02  
0.01  
P
DM  
t1  
Single Pulse  
t2  
0.1  
Z
q
(t) = 3.24°C/W Max.  
Duty Factor, D = t / t  
JC  
1
2
T
JM  
− T = P  
x Z (t)  
q
DM JC  
C
0.02  
10−5  
10−4  
10−3  
10−2  
10−1  
1
t, Rectangular Pulse Duration (s)  
Figure 13. Transient Thermal Response Curve  
www.onsemi.com  
6
FDPF035N06B−F154  
V
GS  
R
Q
g
L
V
DS  
Q
Q
gd  
gs  
V
GS  
DUT  
I
G
= const.  
Charge  
Figure 14. Gate Charge Test Circuit & Waveform  
R
L
V
DS  
GS  
90%  
90%  
10%  
90%  
V
DS  
V
DD  
V
GS  
R
G
10%  
V
DUT  
V
GS  
t
t
d(off)  
t
r
t
f
d(on)  
t
on  
t
off  
Figure 15. Resistive Switching Test Circuit & Waveforms  
L
2
1
2
EAS  
+
LIAS  
V
DS  
BV  
DSS  
I
D
I
AS  
R
G
V
DD  
I
D
(t)  
DUT  
V
DD  
V
GS  
V
DS  
(t)  
t
p
Time  
t
p
Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms  
www.onsemi.com  
7
FDPF035N06B−F154  
+
DUT  
V
DS  
−
I
SD  
L
Driver  
R
G
Same Type  
as DUT  
V
DD  
V
GS  
• dv/dt controlled by R  
G
• I controlled by pulse period  
SD  
Gate Pulse Width  
D +  
Gate Pulse Period  
V
GS  
10 V  
(Driver)  
I
, Body Diode Forward Current  
FM  
I
di/dt  
SD  
(DUT)  
I
RM  
Body Diode Reverse Current  
Body Diode Recovery dv/dt  
V
DS  
V
DD  
V
SD  
(DUT)  
Body Diode  
Forward Voltage Drop  
Figure 17. Peak Recovery dv/dt Test Circuit & Waveforms  
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States  
and/or other countries.  
www.onsemi.com  
8
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
TO−220 FULLPACK, 3−LEAD (ULTRA NARROW LEAD)  
CASE 221BN  
ISSUE A  
DATE 07 MAY 2021  
GENERIC  
MARKING DIAGRAM*  
XXXX = Specific Device Code  
*This information is generic. Please refer to  
XXXXXXXXXX  
A
Y
= Assembly Location  
= Year  
device data sheet for actual part marking.  
Pb−Free indicator, “G” or microdot “G”, may  
or may not be present. Some products may  
not follow the Generic Marking.  
G
AYWW  
WW = Work Week  
G
= Pb−Free Package  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON01135H  
TO−220 FULLPACK, 3−LEAD (ULTRA NARROW LEAD)  
PAGE 1 OF 1  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the  
rights of others.  
© Semiconductor Components Industries, LLC, 2018  
www.onsemi.com  
onsemi,  
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates  
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.  
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any  
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the  
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use  
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products  
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information  
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may  
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license  
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems  
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should  
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
ADDITIONAL INFORMATION  
TECHNICAL PUBLICATIONS:  
Technical Library: www.onsemi.com/design/resources/technical−documentation  
onsemi Website: www.onsemi.com  
ONLINE SUPPORT: www.onsemi.com/support  
For additional information, please contact your local Sales Representative at  
www.onsemi.com/support/sales  

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