FDPF035N06B_F152 [ONSEMI]
Power Field-Effect Transistor, 88A I(D), 60V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB;
| 型号： | FDPF035N06B_F152 |
| 厂家： | 
ONSEMI |
| 描述： | Power Field-Effect Transistor, 88A I(D), 60V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 局域网 开关 脉冲 晶体管 |
| 文件： | 总10页 (文件大小：782K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
November 2013
FDPF035N06B
N-Channel PowerTrench MOSFET
60 V, 88 A, 3.5 mΩ
®
Features
Description
•
•
•
•
•
•
•
•
RDS(on) = 2.91 mΩ ( Typ.) @ VGS = 10 V, ID = 88 A
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench® process that has been tai-
lored to minimize the on-state resistance while maintaining
superior switching performance.
Low FOM RDS(on)*QG
Low Reverse Recovery Charge, Qrr
Soft Reverse Recovery Body Diode
Enables Highly Efficiency in Synchronous Rectification
Fast Switching Speed
Applications
100% UIL Tested
•
•
•
•
Synchronous Rectification for ATX / Server / Telecom PSU
Battery Protection Circuit
RoHS Compliant
Motor Drives and Uninterruptible Power Supplies
Renewable System
D
G
G
D
S
TO-220F
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
Parameter
FDPF035N06B_F152
Unit
V
Drain to Source Voltage
Gate to Source Voltage
60
±20
V
- Continuous (TC = 25oC, Silicon Limited)
- Continuous (TC = 100oC, Silicon Limited)
88
ID
Drain Current
A
62
IDM
Drain Current
- Pulsed
(Note 1)
(Note 2)
(Note 3)
352
A
mJ
EAS
dv/dt
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
600
6.0
V/ns
W
W/oC
oC
(TC = 25oC)
- Derate Above 25oC
46.3
0.31
-55 to +175
300
PD
Power Dissipation
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
oC
Thermal Characteristics
Symbol
Parameter
Unit
FDPF035N06B_F152
RθJC
RθJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
3.24
62.5
oC/W
www.fairchildsemi.com
©2013 Fairchild Semiconductor Corporation
FDPF035N06B Rev. C1
1
Package Marking and Ordering Information
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Quantity
FDPF035N06B_F152
FDPF035N06B
TO-220F
Tube
N/A
N/A
50 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
60
-
-
-
-
V
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient
I
D = 250 μA, Referenced to 25oC
0.03
V/oC
IDSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
VDS = 48 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
-
-
-
-
1
μA
nA
IGSS
±100
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 88 A
2
-
-
4
3.5
-
V
mΩ
S
Static Drain to Source On Resistance
Forward Transconductance
2.91
176
V
DS = 10 V, ID = 88 A
-
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
-
-
-
-
-
-
6035
1685
55
8030
pF
pF
pF
pF
nC
nC
nC
V
VDS = 30 V, VGS = 0 V,
f = 1 MHz
Coss
Output Capacitance
2240
Crss
Reverse Transfer Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Gate Plateau Volatge
-
-
Coss(er)
Qg(tot)
Qgs
VDS = 30 V, VGS = 0 V
2619
76
99
-
V
V
DS = 30 V, ID = 100 A,
GS = 10 V
29
Qgd
12
-
Vplateau
Qsync
Qoss
ESR
5.2
-
(Note 4)
VDS = 0 V, ID = 50 A
VDS = 30 V, VGS = 0 V
f = 1 MHz
Total Gate Charge Sync.
Output Charge
67.3
92.4
2.0
-
nC
nC
Ω
-
Equivalent Series Resistance (G-S)
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
-
-
-
-
32
33
56
23
74
76
ns
ns
ns
ns
VDD = 30 V, ID = 100 A,
V
GS = 10 V, RG = 4.7 Ω
122
56
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
-
-
-
88
352
1.25
-
A
A
ISM
VSD
trr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0 V, ISD = 88 A
-
V
71
78
ns
nC
V
GS = 0 V, ISD = 100 A,
dIF/dt = 100 A/μs
Qrr
Reverse Recovery Charge
-
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 3 mH, I = 20 A, starting T = 25°C.
AS
J
3. I ≤ 100 A, di/dt ≤ 200 A/μs, V ≤ BV
, starting T = 25°C.
J
SD
DD
DSS
4. Essentially independent of operating temperature typical characteristics.
www.fairchildsemi.com
©2013 Fairchild Semiconductor Corporation
FDPF035N06B Rev. C1
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
400
200
*Notes:
1. VDS = 10V
100
10
1
2. 250μs Pulse Test
100
25oC
-55oC
175oC
VGS = 15.0V
10.0V
8.0V
7.0V
10
6.5V
6.0V
5.5V
5.0V
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
2
0.1
1
10
2
3
4
5
6
7
VDS, Drain-Source Voltage[V]
VGS, Gate-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Drain Current and Gate Voltage
3.5
3.0
2.5
2.0
200
100
10
1
VGS = 10V
VGS = 20V
175oC
25oC
*Notes:
1. VGS = 0V
*Note: TC = 25oC
2. 250μs Pulse Test
0
50
100
150
200
250
300
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
VSD, Body Diode Forward Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10
10000
Ciss
VDS = 12V
VDS = 30V
VDS = 48V
8
6
4
2
0
1000
Coss
*Note:
1. VGS = 0V
100
10
2. f = 1MHz
Crss
C
C
C
= C + C (C = shorted)
gs gd ds
iss
= C + C
ds gd
= C
gd
oss
rss
*Note: ID = 100A
60 80 90
0.1
1
10
60
0
20
40
Qg, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
www.fairchildsemi.com
©2013 Fairchild Semiconductor Corporation
FDPF035N06B Rev. C1
3
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.8
1.6
1.4
1.2
1.0
1.10
1.05
1.00
0.95
*Notes:
1. VGS = 0V
*Notes:
1. VGS = 10V
0.8
2. ID = 250μA
2. ID = 88A
0.6
-100
0.90
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
1000
100
VGS = 10V
100
80
60
40
20
0
100μs
1ms
10
10ms
100ms
DC
Operation in This Area
is Limited by R DS(on)
1
SINGLE PULSE
T
C = 25oC
0.1
TJ = 175oC
RθJC = 3.24oC/W
RθJC = 3.24oC/W
0.01
0.1
1
10
100
25
50
75
100
125
150
175
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 11. Eoss vs. Drain to Source Voltage
Figure 12. Unclamped Inductive
Switching Capability
3.0
2.5
2.0
1.5
1.0
0.5
0.0
200
100
10
1
TJ = 25 o
C
TJ = 150 o
C
0.001 0.01
0.1
1
10
100
1000
0
10
20
30
40
50
60
VDS, Drain to Source Voltage [V]
tAV, TIME IN AVALANCHE (ms)
www.fairchildsemi.com
©2013 Fairchild Semiconductor Corporation
FDPF035N06B Rev. C1
4
Typical Performance Characteristics (Continued)
Figure 13. Transient Thermal Response Curve
4
1
0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
Single pulse
t2
*Notes:
0.1
1. ZθJC(t) = 3.24oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.02
10-5
10-4
10-3
10-2
10-1
1
t , Rectangular Pulse Duration [sec]
1
www.fairchildsemi.com
©2013 Fairchild Semiconductor Corporation
FDPF035N06B Rev. C1
5
I
= const.
G
Figure 14. Gate Charge Test Circuit & Waveform
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 15. Resistive Switching Test Circuit & Waveforms
VGS
Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms
www.fairchildsemi.com
©2013 Fairchild Semiconductor Corporation
FDPF035N06B Rev. C1
6
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms
www.fairchildsemi.com
©2013 Fairchild Semiconductor Corporation
FDPF035N06B Rev. C1
7
VCC
Driver
VGS
(Driver)
t
t
VGS
(DUT)
10V
VDD
VR
G
DUT
RG
1
Qsync =
t dt
( )
⋅ V
RG
VGS
RG
Figure 18. Total Gate Charge Qsync. Test Circuit & Waveforms
www.fairchildsemi.com
©2013 Fairchild Semiconductor Corporation
FDPF035N06B Rev. C1
8
Mechanical Dimensions
Figure 19. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Takcheong
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-0A3
www.fairchildsemi.com
©2013 Fairchild Semiconductor Corporation
FDPF035N06B Rev. C1
9
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower
AX-CAP®*
BitSiC
F-PFS
®*
FRFET®
®
Global Power ResourceSM
GreenBridge
Green FPS
Green FPS e-Series
Gmax
GTO
IntelliMAX
ISOPLANAR
Making Small Speakers Sound Louder
and Better™
MegaBuck
MICROCOUPLER
MicroFET
MicroPak
MicroPak2
TinyBoost®
TinyBuck®
TinyCalc
TinyLogic®
TINYOPTO
TinyPower
TinyPWM
TinyWire
TranSiC
PowerTrench®
PowerXS™
Programmable Active Droop
QFET®
Build it Now
CorePLUS
CorePOWER
CROSSVOLT
CTL
Current Transfer Logic
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficientMax
QS
Quiet Series
RapidConfigure
Saving our world, 1mW/W/kW at a time™
SignalWise
SmartMax
SMART START
Solutions for Your Success
SPM®
TriFault Detect
TRUECURRENT®*
SerDes
ESBC
®
Fairchild®
UHC®
Fairchild Semiconductor®
FACT Quiet Series
FACT®
STEALTH
MillerDrive
Ultra FRFET
UniFET
VCX
VisualMax
VoltagePlus
XS™
SuperFET®
MotionMax
mWSaver®
SuperSOT-3
FAST®
SuperSOT-6
SuperSOT-8
SupreMOS®
SyncFET
Sync-Lock™
OptoHiT
FastvCore
FETBench
FPS
OPTOLOGIC®
OPTOPLANAR®
仙童™
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE
SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,
WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain
life, and (c) whose failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com,
under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors
are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical
and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise.
Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global
problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Preliminary
No Identification Needed
Obsolete
First Production
Full Production
Not In Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I68
© Fairchild Semiconductor Corporation
www.fairchildsemi.com
相关型号：
FDPF10N50UT
Power Field-Effect Transistor, 8A I(D), 500V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220F, 3 PIN
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明